JP2000163964A5 - - Google Patents

Download PDF

Info

Publication number
JP2000163964A5
JP2000163964A5 JP1998337677A JP33767798A JP2000163964A5 JP 2000163964 A5 JP2000163964 A5 JP 2000163964A5 JP 1998337677 A JP1998337677 A JP 1998337677A JP 33767798 A JP33767798 A JP 33767798A JP 2000163964 A5 JP2000163964 A5 JP 2000163964A5
Authority
JP
Japan
Prior art keywords
voltage
output
wiring
power supply
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998337677A
Other languages
English (en)
Japanese (ja)
Other versions
JP4397062B2 (ja
JP2000163964A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP33767798A priority Critical patent/JP4397062B2/ja
Priority claimed from JP33767798A external-priority patent/JP4397062B2/ja
Priority to US09/321,884 priority patent/US6246280B1/en
Publication of JP2000163964A publication Critical patent/JP2000163964A/ja
Priority to US09/843,691 priority patent/US6385117B2/en
Publication of JP2000163964A5 publication Critical patent/JP2000163964A5/ja
Application granted granted Critical
Publication of JP4397062B2 publication Critical patent/JP4397062B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP33767798A 1998-11-27 1998-11-27 電圧発生回路および半導体記憶装置 Expired - Fee Related JP4397062B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP33767798A JP4397062B2 (ja) 1998-11-27 1998-11-27 電圧発生回路および半導体記憶装置
US09/321,884 US6246280B1 (en) 1998-11-27 1999-05-28 Negative voltage generating circuit with high control responsiveness which can be formed using transistor with low breakdown voltage and semiconductor memory device including the same
US09/843,691 US6385117B2 (en) 1998-11-27 2001-04-30 Negative voltage generating circuit with high control responsiveness which can be formed using transistor with low breakdown voltage and semiconductor memory device including the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33767798A JP4397062B2 (ja) 1998-11-27 1998-11-27 電圧発生回路および半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2000163964A JP2000163964A (ja) 2000-06-16
JP2000163964A5 true JP2000163964A5 (https=) 2006-01-12
JP4397062B2 JP4397062B2 (ja) 2010-01-13

Family

ID=18310927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33767798A Expired - Fee Related JP4397062B2 (ja) 1998-11-27 1998-11-27 電圧発生回路および半導体記憶装置

Country Status (2)

Country Link
US (2) US6246280B1 (https=)
JP (1) JP4397062B2 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4576736B2 (ja) * 2001-03-28 2010-11-10 セイコーエプソン株式会社 電源回路、表示装置および電子機器
US7336121B2 (en) * 2001-05-04 2008-02-26 Samsung Electronics Co., Ltd. Negative voltage generator for a semiconductor memory device
US6891426B2 (en) * 2001-10-19 2005-05-10 Intel Corporation Circuit for providing multiple voltage signals
JP3874247B2 (ja) * 2001-12-25 2007-01-31 株式会社ルネサステクノロジ 半導体集積回路装置
US6784722B2 (en) * 2002-10-09 2004-08-31 Intel Corporation Wide-range local bias generator for body bias grid
CN1307720C (zh) * 2003-06-27 2007-03-28 富士通株式会社 半导体集成电路
KR100572323B1 (ko) * 2003-12-11 2006-04-19 삼성전자주식회사 멀티레벨 고전압 발생장치
US7026843B1 (en) * 2004-01-16 2006-04-11 Spansion Llc Flexible cascode amplifier circuit with high gain for flash memory cells
JP4965069B2 (ja) * 2004-10-21 2012-07-04 ラピスセミコンダクタ株式会社 半導体集積回路
US8390146B2 (en) * 2008-02-27 2013-03-05 Panasonic Corporation Semiconductor integrated circuit and various devices provided with the same
KR100956776B1 (ko) 2008-04-18 2010-05-12 주식회사 하이닉스반도체 네거티브 전압 생성 장치
US7733126B1 (en) * 2009-03-31 2010-06-08 Freescale Semiconductor, Inc. Negative voltage generation
KR101131945B1 (ko) * 2010-07-07 2012-03-29 주식회사 하이닉스반도체 비휘발성 메모리 장치
KR101809105B1 (ko) * 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
JP5866964B2 (ja) * 2011-10-25 2016-02-24 富士通株式会社 制御回路及びそれを用いた電子機器
US8830776B1 (en) * 2013-03-15 2014-09-09 Freescale Semiconductor, Inc. Negative charge pump regulation
JP2015170379A (ja) * 2014-03-10 2015-09-28 マイクロン テクノロジー， インク． 半導体装置
US10826388B2 (en) 2018-12-11 2020-11-03 Texas Instruments Incorporated Charge pump circuits
US12205663B2 (en) * 2019-07-09 2025-01-21 Arm Limited Regulated negative charge pump circuitry and methods

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3569310B2 (ja) * 1993-10-14 2004-09-22 株式会社ルネサステクノロジ 半導体記憶装置
US5614815A (en) * 1994-03-10 1997-03-25 Fujitsu Limited Constant voltage supplying circuit
KR0145758B1 (ko) * 1994-08-24 1998-08-01 김주용 반도체 소자의 전압 조정 회로
FR2735921B1 (fr) * 1995-06-21 1997-08-22 Sgs Thomson Microelectronics Circuit generateur de phases pour circuit d'alimentation negative du type pompe de charge
FR2735922B1 (fr) * 1995-06-21 1997-08-22 Sgs Thomson Microelectronics Circuit generateur de tension negative du type pompe de charge
JPH10261946A (ja) * 1997-03-19 1998-09-29 Mitsubishi Electric Corp 半導体集積回路
KR100293455B1 (ko) * 1998-08-31 2001-07-12 김영환 반도체메모리소자의전압공급장치

Similar Documents

Publication Publication Date Title
JP2000163964A5 (https=)
US6058063A (en) Integrated circuit memory devices having reduced power consumption requirements during standby mode operation
US5814851A (en) Semiconductor memory device using a plurality of internal voltages
KR20200139773A (ko) 저전력 동작을 갖는 다중 다이 모듈
US20080019204A1 (en) Apparatus and Method for Supplying Power in Semiconductor Device
KR100437463B1 (ko) 반도체 메모리 장치 내부전원전압발생기를 제어하는 회로및 방법
JP4397062B2 (ja) 電圧発生回路および半導体記憶装置
JP2000021170A (ja) 半導体集積回路装置
US7515492B2 (en) Semiconductor memory device
TWI254314B (en) Semiconductor memory device and timing control method
US7961548B2 (en) Semiconductor memory device having column decoder
US7821851B2 (en) Semiconductor memory device capable of operating in a plurality of operating modes and method for controlling thereof
JPH09147553A (ja) 半導体記憶装置
US20100191987A1 (en) Semiconductor device using plural external voltage and data processing system including the same
US6275439B1 (en) Power supply control apparatus for changing power line connection type in response to operation mode in semiconductor memory device
KR0173953B1 (ko) 반도체메모리장치의 내부전원공급장치
KR102176939B1 (ko) 전력 관리부를 구비한 반도체 메모리 모듈, 디바이스
US20070247951A1 (en) Semiconductor memory apparatus capable of reducing ground noise
US5771198A (en) Source voltage generating circuit in semiconductor memory
US7505297B2 (en) Semiconductor memory device
JPH0793977A (ja) 半導体メモリ装置の中間電圧発生回路
JP4353593B2 (ja) 半導体装置
KR100190049B1 (ko) 어레이회로 제어용 내부전압을 이용한 승압전원발생장치
US20100264945A1 (en) Semiconductor integrated circuit
KR100420086B1 (ko) 반도체 장치의 전압 변환 회로