JP4371822B2 - 露光装置 - Google Patents

露光装置 Download PDF

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Publication number
JP4371822B2
JP4371822B2 JP2004000827A JP2004000827A JP4371822B2 JP 4371822 B2 JP4371822 B2 JP 4371822B2 JP 2004000827 A JP2004000827 A JP 2004000827A JP 2004000827 A JP2004000827 A JP 2004000827A JP 4371822 B2 JP4371822 B2 JP 4371822B2
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JP
Japan
Prior art keywords
liquid
temperature
wafer
optical system
chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004000827A
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English (en)
Japanese (ja)
Other versions
JP2005197384A (ja
JP2005197384A5 (OSRAM
Inventor
英悟 川上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004000827A priority Critical patent/JP4371822B2/ja
Priority to US11/030,515 priority patent/US7382434B2/en
Publication of JP2005197384A publication Critical patent/JP2005197384A/ja
Priority to US12/060,393 priority patent/US7719659B2/en
Publication of JP2005197384A5 publication Critical patent/JP2005197384A5/ja
Application granted granted Critical
Publication of JP4371822B2 publication Critical patent/JP4371822B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2004000827A 2004-01-06 2004-01-06 露光装置 Expired - Fee Related JP4371822B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004000827A JP4371822B2 (ja) 2004-01-06 2004-01-06 露光装置
US11/030,515 US7382434B2 (en) 2004-01-06 2005-01-05 Exposure apparatus and device manufacturing method
US12/060,393 US7719659B2 (en) 2004-01-06 2008-04-01 Exposure apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004000827A JP4371822B2 (ja) 2004-01-06 2004-01-06 露光装置

Publications (3)

Publication Number Publication Date
JP2005197384A JP2005197384A (ja) 2005-07-21
JP2005197384A5 JP2005197384A5 (OSRAM) 2009-09-17
JP4371822B2 true JP4371822B2 (ja) 2009-11-25

Family

ID=34708978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004000827A Expired - Fee Related JP4371822B2 (ja) 2004-01-06 2004-01-06 露光装置

Country Status (2)

Country Link
US (2) US7382434B2 (OSRAM)
JP (1) JP4371822B2 (OSRAM)

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JP4656057B2 (ja) * 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
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CN1771463A (zh) * 2003-04-10 2006-05-10 株式会社尼康 用于沉浸光刻装置收集液体的溢出通道
CN101061429B (zh) * 2003-04-10 2015-02-04 株式会社尼康 包括用于沉浸光刻装置的真空清除的环境系统
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KR101369582B1 (ko) 2003-04-17 2014-03-04 가부시키가이샤 니콘 액침 리소그래피에서 이용하기 위한 오토포커스 소자의 광학적 배열
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US7236232B2 (en) * 2003-07-01 2007-06-26 Nikon Corporation Using isotopically specified fluids as optical elements
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EP1503244A1 (en) * 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
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KR20170070264A (ko) 2003-09-03 2017-06-21 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
JP4444920B2 (ja) * 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
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Also Published As

Publication number Publication date
US7719659B2 (en) 2010-05-18
US7382434B2 (en) 2008-06-03
JP2005197384A (ja) 2005-07-21
US20050146695A1 (en) 2005-07-07
US20080186463A1 (en) 2008-08-07

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