JP4330168B2 - モールド、インプリント方法、及びチップの製造方法 - Google Patents

モールド、インプリント方法、及びチップの製造方法 Download PDF

Info

Publication number
JP4330168B2
JP4330168B2 JP2006194905A JP2006194905A JP4330168B2 JP 4330168 B2 JP4330168 B2 JP 4330168B2 JP 2006194905 A JP2006194905 A JP 2006194905A JP 2006194905 A JP2006194905 A JP 2006194905A JP 4330168 B2 JP4330168 B2 JP 4330168B2
Authority
JP
Japan
Prior art keywords
mold
alignment mark
substrate
workpiece
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006194905A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007103915A (ja
JP2007103915A5 (enExample
Inventor
敦則 寺崎
淳一 関
信人 末平
秀樹 稲
真吾 奥島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2006194905A priority Critical patent/JP4330168B2/ja
Priority to US11/468,876 priority patent/US7510388B2/en
Priority to AT06120128T priority patent/ATE513250T1/de
Priority to EP06120128A priority patent/EP1760526B1/en
Priority to KR1020060085406A priority patent/KR100840799B1/ko
Priority to CN2006101281879A priority patent/CN1928711B/zh
Publication of JP2007103915A publication Critical patent/JP2007103915A/ja
Priority to US12/388,194 priority patent/US8668484B2/en
Priority to US12/388,179 priority patent/US7981304B2/en
Publication of JP2007103915A5 publication Critical patent/JP2007103915A5/ja
Application granted granted Critical
Publication of JP4330168B2 publication Critical patent/JP4330168B2/ja
Priority to US13/175,071 priority patent/US8562846B2/en
Priority to US14/148,426 priority patent/US20140120199A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • B29C59/022—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing characterised by the disposition or the configuration, e.g. dimensions, of the embossments or the shaping tools therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2012—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image using liquid photohardening compositions, e.g. for the production of reliefs such as flexographic plates or stamps
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
JP2006194905A 2005-09-06 2006-07-14 モールド、インプリント方法、及びチップの製造方法 Expired - Fee Related JP4330168B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2006194905A JP4330168B2 (ja) 2005-09-06 2006-07-14 モールド、インプリント方法、及びチップの製造方法
US11/468,876 US7510388B2 (en) 2005-09-06 2006-08-31 Mold, imprint method, and process for producing chip
AT06120128T ATE513250T1 (de) 2005-09-06 2006-09-05 Prägeform, imprint lithographieverfahren, und verfahren für chipherstellung
EP06120128A EP1760526B1 (en) 2005-09-06 2006-09-05 Mold, imprint method, and process for producing chip
CN2006101281879A CN1928711B (zh) 2005-09-06 2006-09-06 模具、压印方法和用于生产芯片的工艺
KR1020060085406A KR100840799B1 (ko) 2005-09-06 2006-09-06 몰드, 임프린트 방법 및 칩의 제조방법
US12/388,194 US8668484B2 (en) 2005-09-06 2009-02-18 Mold, imprint method, and process for producing a chip
US12/388,179 US7981304B2 (en) 2005-09-06 2009-02-18 Process for producing a chip using a mold
US13/175,071 US8562846B2 (en) 2005-09-06 2011-07-01 Process for producing a chip using a mold
US14/148,426 US20140120199A1 (en) 2005-09-06 2014-01-06 Mold, imprint method, and process for producing chip

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005258034 2005-09-06
JP2006194905A JP4330168B2 (ja) 2005-09-06 2006-07-14 モールド、インプリント方法、及びチップの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009095495A Division JP4448191B2 (ja) 2005-09-06 2009-04-10 モールド、インプリント方法、及びチップの製造方法

Publications (3)

Publication Number Publication Date
JP2007103915A JP2007103915A (ja) 2007-04-19
JP2007103915A5 JP2007103915A5 (enExample) 2009-03-12
JP4330168B2 true JP4330168B2 (ja) 2009-09-16

Family

ID=37076119

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006194905A Expired - Fee Related JP4330168B2 (ja) 2005-09-06 2006-07-14 モールド、インプリント方法、及びチップの製造方法

Country Status (5)

Country Link
US (5) US7510388B2 (enExample)
EP (1) EP1760526B1 (enExample)
JP (1) JP4330168B2 (enExample)
KR (1) KR100840799B1 (enExample)
AT (1) ATE513250T1 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4330168B2 (ja) * 2005-09-06 2009-09-16 キヤノン株式会社 モールド、インプリント方法、及びチップの製造方法
JP4262267B2 (ja) * 2005-09-06 2009-05-13 キヤノン株式会社 モールド、インプリント装置及びデバイスの製造方法
US7690910B2 (en) 2006-02-01 2010-04-06 Canon Kabushiki Kaisha Mold for imprint, process for producing minute structure using the mold, and process for producing the mold
KR100871812B1 (ko) * 2006-03-29 2008-12-05 주식회사 에스앤에스텍 나노 임프린트 마스크 및 그 제조방법
US8012395B2 (en) * 2006-04-18 2011-09-06 Molecular Imprints, Inc. Template having alignment marks formed of contrast material
JP4926881B2 (ja) * 2006-09-22 2012-05-09 キヤノン株式会社 インプリント装置およびアライメント方法
US7776628B2 (en) * 2006-11-16 2010-08-17 International Business Machines Corporation Method and system for tone inverting of residual layer tolerant imprint lithography
KR100790899B1 (ko) * 2006-12-01 2008-01-03 삼성전자주식회사 얼라인 마크가 형성된 템플릿 및 그 제조 방법
JP5188192B2 (ja) * 2007-02-20 2013-04-24 キヤノン株式会社 モールド、モールドの製造方法、インプリント装置及びインプリント方法、インプリント方法を用いた構造体の製造方法
KR100843552B1 (ko) * 2007-07-19 2008-07-04 한국전자통신연구원 나노 임프린트 공정을 이용한 나노 전극선 제조 방법
JP5032239B2 (ja) * 2007-08-24 2012-09-26 財団法人神奈川科学技術アカデミー インプリント用モールドおよびその製造方法
JP5332161B2 (ja) * 2007-09-19 2013-11-06 凸版印刷株式会社 インプリントモールド、インプリントモールド製造方法
KR100925223B1 (ko) * 2008-01-04 2009-11-06 재단법인서울대학교산학협력재단 Ｕｖ 나노임프린트 리소그라피용 몰드 및 ｕｖ나노임프린트 리소그라피용 몰드 제조를 위한 적층구조물
KR20100033704A (ko) * 2008-09-22 2010-03-31 엘지전자 주식회사 미세패턴을 구비하는 스탬퍼
US20100092599A1 (en) * 2008-10-10 2010-04-15 Molecular Imprints, Inc. Complementary Alignment Marks for Imprint Lithography
US20100104852A1 (en) * 2008-10-23 2010-04-29 Molecular Imprints, Inc. Fabrication of High-Throughput Nano-Imprint Lithography Templates
KR101541814B1 (ko) * 2008-12-09 2015-08-05 삼성전자 주식회사 나노 임프린트 리소그래피 방법
KR20100103211A (ko) * 2009-03-13 2010-09-27 삼성전자주식회사 코팅층을 포함하는 나노 임프린트 리소그래피용 템플리트
JP5448696B2 (ja) * 2009-03-25 2014-03-19 富士フイルム株式会社 光インプリント用硬化性組成物およびそれを用いた硬化物の製造方法
JP5404140B2 (ja) 2009-04-01 2014-01-29 株式会社東芝 テンプレート及び半導体装置の製造方法
NL2004932A (en) * 2009-07-27 2011-01-31 Asml Netherlands Bv Imprint lithography template.
JP2011066074A (ja) * 2009-09-15 2011-03-31 Fujifilm Corp インプリント用硬化性組成物
JP4881413B2 (ja) 2009-09-16 2012-02-22 株式会社東芝 識別マーク付きテンプレート及びその製造方法
NL2005259A (en) * 2009-09-29 2011-03-30 Asml Netherlands Bv Imprint lithography.
NL2005266A (en) 2009-10-28 2011-05-02 Asml Netherlands Bv Imprint lithography.
FR2955522B1 (fr) * 2010-01-28 2012-02-24 Commissariat Energie Atomique Moule pour la lithographie par nano-impression assistee uv et procedes de realisation d'un tel moule
WO2011097514A2 (en) * 2010-02-05 2011-08-11 Molecular Imprints, Inc. Templates having high contrast alignment marks
JP5451450B2 (ja) * 2010-02-24 2014-03-26 キヤノン株式会社 インプリント装置及びそのテンプレート並びに物品の製造方法
JP5581871B2 (ja) * 2010-07-22 2014-09-03 大日本印刷株式会社 インプリント方法およびインプリント装置
JP5350345B2 (ja) * 2010-09-22 2013-11-27 株式会社神戸製鋼所 薄膜半導体の結晶性評価装置および方法
KR101861644B1 (ko) 2010-09-24 2018-05-28 캐논 나노테크놀로지즈 인코퍼레이티드 다단계 임프린팅을 통한 고콘트라스트 정렬 마크
US8771529B1 (en) * 2010-09-30 2014-07-08 Seagate Technology Llc Method for imprint lithography
US8967992B2 (en) * 2011-04-25 2015-03-03 Canon Nanotechnologies, Inc. Optically absorptive material for alignment marks
JP5743718B2 (ja) * 2011-05-31 2015-07-01 キヤノン株式会社 成形型の製造方法及び光学素子
JP5831012B2 (ja) * 2011-07-27 2015-12-09 大日本印刷株式会社 インプリント用位置合わせマーク、該マークを備えたテンプレートおよびその製造方法
JP5651573B2 (ja) 2011-11-18 2015-01-14 株式会社東芝 テンプレート処理方法
KR20140076357A (ko) * 2012-12-12 2014-06-20 삼성전자주식회사 고대비 정렬 마크를 가진 나노임프린트 스탬프 및 그 제조방법
JP2014120584A (ja) * 2012-12-14 2014-06-30 Toshiba Corp インプリント用マスクの洗浄方法
GB2514139A (en) * 2013-05-14 2014-11-19 Aghababaie Lin & Co Ltd Apparatus for fabrication of three dimensional objects
JP2015015424A (ja) * 2013-07-08 2015-01-22 株式会社東芝 位置合わせマーク、フォトマスク、および位置合わせマークの形成方法
JP6278383B2 (ja) * 2013-10-24 2018-02-14 国立研究開発法人産業技術総合研究所 高コントラスト位置合わせマークを備えたモールドの製造方法
JP2015146412A (ja) * 2014-02-04 2015-08-13 株式会社東芝 インプリント用テンプレート及びその製造方法
JP6417728B2 (ja) * 2014-06-09 2018-11-07 大日本印刷株式会社 テンプレートの製造方法
JP6394112B2 (ja) * 2014-06-26 2018-09-26 大日本印刷株式会社 テンプレートの製造方法およびテンプレート
JP5754535B2 (ja) * 2014-07-08 2015-07-29 大日本印刷株式会社 インプリント方法およびインプリント装置
JP6446943B2 (ja) * 2014-09-24 2019-01-09 大日本印刷株式会社 インプリント用テンプレート及びインプリント方法
US10869592B2 (en) 2015-02-23 2020-12-22 Uroviu Corp. Handheld surgical endoscope
JP6266842B2 (ja) * 2015-08-31 2018-01-24 Hoya株式会社 マスクブランク、マスクブランクの製造方法、位相シフトマスク、位相シフトマスクの製造方法及び半導体デバイスの製造方法
CN116068849A (zh) * 2015-09-29 2023-05-05 大日本印刷株式会社 压印用的模具及其制造方法
JP2016028442A (ja) * 2015-10-08 2016-02-25 大日本印刷株式会社 テンプレート
EP3410215B1 (en) * 2016-01-27 2020-06-17 LG Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
KR102138960B1 (ko) 2016-01-27 2020-07-28 주식회사 엘지화학 필름 마스크, 이의 제조방법, 이를 이용한 패턴 형성 방법 및 이를 이용하여 형성된 패턴
KR102535820B1 (ko) * 2016-05-19 2023-05-24 삼성디스플레이 주식회사 임프린트 리소그래피 방법, 임프린트용 마스터 템플릿, 이를 이용하여 제조된 와이어 그리드 편광소자 및 이를 포함하는 표시 기판
JP7056013B2 (ja) * 2016-05-25 2022-04-19 大日本印刷株式会社 テンプレート及びテンプレートブランクス、並びにインプリント用テンプレート基板の製造方法、インプリント用テンプレートの製造方法、及び、テンプレート
JP2018022850A (ja) * 2016-08-05 2018-02-08 大日本印刷株式会社 インプリント用モールド、及び、該モールドを用いたパターン形成方法
CN114305290A (zh) * 2017-01-23 2022-04-12 乌罗维乌公司 单次使用的一次性远侧部分
KR102288980B1 (ko) * 2017-03-08 2021-08-12 에스케이하이닉스 주식회사 얼라인먼트 마크를 가지는 임프린트 템플레이트 및 임프린트 방법
US12268358B2 (en) 2019-12-05 2025-04-08 Uroviu Corp. Portable endoscope with side-mountable disposable portion
US12228582B2 (en) 2018-06-21 2025-02-18 Shimadzu Corporation Method and apparatus for testing near infrared-photoimmunotherapy treatment
JP6642689B2 (ja) * 2018-12-04 2020-02-12 大日本印刷株式会社 インプリント用テンプレート及びインプリント方法
EP4003138A4 (en) 2019-07-25 2023-08-30 Uroviu Corp. Disposable endoscopy cannula with integrated grasper
JP6835167B2 (ja) * 2019-08-28 2021-02-24 大日本印刷株式会社 テンプレートの製造方法
JP7746204B2 (ja) * 2022-03-22 2025-09-30 キオクシア株式会社 テンプレート、テンプレートの製造方法、および半導体装置の製造方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69211198T2 (de) 1991-03-26 1996-10-31 Canon Kk Verfahren zum Herstellen von Formteilen aus Kunststoff mit Reliefmustern auf der Oberfläche
US5266511A (en) * 1991-10-02 1993-11-30 Fujitsu Limited Process for manufacturing three dimensional IC's
US5838653A (en) * 1995-10-04 1998-11-17 Reveo, Inc. Multiple layer optical recording media and method and system for recording and reproducing information using the same
US5772905A (en) 1995-11-15 1998-06-30 Regents Of The University Of Minnesota Nanoimprint lithography
US6334960B1 (en) 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
JP2000323461A (ja) 1999-05-11 2000-11-24 Nec Corp 微細パターン形成装置、その製造方法、および形成方法
SE515962C2 (sv) 2000-03-15 2001-11-05 Obducat Ab Anordning för överföring av mönster till objekt
SG142150A1 (en) 2000-07-16 2008-05-28 Univ Texas High-resolution overlay alignment systems for imprint lithography
WO2002067055A2 (en) 2000-10-12 2002-08-29 Board Of Regents, The University Of Texas System Template for room temperature, low pressure micro- and nano-imprint lithography
US6993169B2 (en) 2001-01-11 2006-01-31 Trestle Corporation System and method for finding regions of interest for microscopic digital montage imaging
US20050064344A1 (en) 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
JP3907504B2 (ja) 2002-03-14 2007-04-18 三菱電機株式会社 半導体装置の製造方法および半導体装置製造用モールド
US7037639B2 (en) 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
US7070405B2 (en) * 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US6916511B2 (en) 2002-10-24 2005-07-12 Hewlett-Packard Development Company, L.P. Method of hardening a nano-imprinting stamp
JP4036820B2 (ja) 2002-12-18 2008-01-23 インターナショナル・ビジネス・マシーンズ・コーポレーション サブ波長構造体の製造
FR2849532B1 (fr) 2002-12-26 2005-08-19 Electricite De France Procede de fabrication d'un compose i-iii-vi2 en couches minces, favorisant l'incorporation d'elements iii
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
EP1526411A1 (en) 2003-10-24 2005-04-27 Obducat AB Apparatus and method for aligning surface
JP4029885B2 (ja) * 2005-03-29 2008-01-09 セイコーエプソン株式会社 半導体装置の製造方法
JP4330168B2 (ja) * 2005-09-06 2009-09-16 キヤノン株式会社 モールド、インプリント方法、及びチップの製造方法
JP4262267B2 (ja) * 2005-09-06 2009-05-13 キヤノン株式会社 モールド、インプリント装置及びデバイスの製造方法

Also Published As

Publication number Publication date
US20070187875A1 (en) 2007-08-16
US20090152753A1 (en) 2009-06-18
US8668484B2 (en) 2014-03-11
US20090152239A1 (en) 2009-06-18
US8562846B2 (en) 2013-10-22
JP2007103915A (ja) 2007-04-19
US20110278259A1 (en) 2011-11-17
KR20070027466A (ko) 2007-03-09
ATE513250T1 (de) 2011-07-15
US7510388B2 (en) 2009-03-31
US20140120199A1 (en) 2014-05-01
US7981304B2 (en) 2011-07-19
KR100840799B1 (ko) 2008-06-23
EP1760526A1 (en) 2007-03-07
EP1760526B1 (en) 2011-06-15

Similar Documents

Publication Publication Date Title
JP4330168B2 (ja) モールド、インプリント方法、及びチップの製造方法
JP4448195B2 (ja) モールド、インプリント方法、及びチップの製造方法
US8770958B2 (en) Pattern forming method and pattern forming apparatus in which a substrate and a mold are aligned in an in-plane direction
JP5404140B2 (ja) テンプレート及び半導体装置の製造方法
US8967992B2 (en) Optically absorptive material for alignment marks
KR20080114678A (ko) 임프린트 리소그래피 시스템
KR20070041585A (ko) 임프린트 리소그래피 템플릿을 위한 모트 시스템
JP2008008889A (ja) ギャップ測定方法、インプリント方法、及びインプリント装置
JP5581871B2 (ja) インプリント方法およびインプリント装置
JP5002211B2 (ja) インプリント装置およびインプリント方法
JP5707990B2 (ja) インプリント用モールド、およびインプリント方法
JP5754535B2 (ja) インプリント方法およびインプリント装置
JP2024003899A (ja) インプリントシステム、基板、インプリント方法、レプリカモールド製造方法及び、物品の製造方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080729

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090114

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090210

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090410

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090611

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090615

R150 Certificate of patent or registration of utility model

Ref document number: 4330168

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120626

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120626

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130626

Year of fee payment: 4

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: R3D03

LAPS Cancellation because of no payment of annual fees