JP4323946B2 - 露光装置 - Google Patents

露光装置 Download PDF

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Publication number
JP4323946B2
JP4323946B2 JP2003422932A JP2003422932A JP4323946B2 JP 4323946 B2 JP4323946 B2 JP 4323946B2 JP 2003422932 A JP2003422932 A JP 2003422932A JP 2003422932 A JP2003422932 A JP 2003422932A JP 4323946 B2 JP4323946 B2 JP 4323946B2
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JP
Japan
Prior art keywords
carbon dioxide
liquid
exposure apparatus
exposure
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003422932A
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English (en)
Japanese (ja)
Other versions
JP2005183693A5 (https=
JP2005183693A (ja
Inventor
徳行 本多
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2003422932A priority Critical patent/JP4323946B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to EP04807315A priority patent/EP1697974A4/en
Priority to US10/538,467 priority patent/US7292309B2/en
Priority to PCT/JP2004/018958 priority patent/WO2005062351A1/en
Priority to KR1020067011585A priority patent/KR100801354B1/ko
Priority to TW093139536A priority patent/TWI285796B/zh
Publication of JP2005183693A publication Critical patent/JP2005183693A/ja
Publication of JP2005183693A5 publication Critical patent/JP2005183693A5/ja
Application granted granted Critical
Publication of JP4323946B2 publication Critical patent/JP4323946B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003422932A 2003-12-19 2003-12-19 露光装置 Expired - Fee Related JP4323946B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003422932A JP4323946B2 (ja) 2003-12-19 2003-12-19 露光装置
US10/538,467 US7292309B2 (en) 2003-12-19 2004-12-13 Exposure apparatus and device manufacturing method
PCT/JP2004/018958 WO2005062351A1 (en) 2003-12-19 2004-12-13 Exposure apparatus and device manufacturing method
KR1020067011585A KR100801354B1 (ko) 2003-12-19 2004-12-13 노광장치 및 디바이스의 제조방법
EP04807315A EP1697974A4 (en) 2003-12-19 2004-12-13 EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD
TW093139536A TWI285796B (en) 2003-12-19 2004-12-17 Exposure apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003422932A JP4323946B2 (ja) 2003-12-19 2003-12-19 露光装置

Publications (3)

Publication Number Publication Date
JP2005183693A JP2005183693A (ja) 2005-07-07
JP2005183693A5 JP2005183693A5 (https=) 2007-02-08
JP4323946B2 true JP4323946B2 (ja) 2009-09-02

Family

ID=34708744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003422932A Expired - Fee Related JP4323946B2 (ja) 2003-12-19 2003-12-19 露光装置

Country Status (6)

Country Link
US (1) US7292309B2 (https=)
EP (1) EP1697974A4 (https=)
JP (1) JP4323946B2 (https=)
KR (1) KR100801354B1 (https=)
TW (1) TWI285796B (https=)
WO (1) WO2005062351A1 (https=)

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TWI424470B (zh) * 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
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US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
TWI515770B (zh) 2003-06-19 2016-01-01 尼康股份有限公司 An exposure apparatus, an exposure method, and an element manufacturing method
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1531362A3 (en) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
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EP2717295B1 (en) 2003-12-03 2018-07-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
DE602004030481D1 (de) 2003-12-15 2011-01-20 Nippon Kogaku Kk Bühnensystem, belichtungsvorrichtung und belichtungsverfahren
US7697110B2 (en) 2004-01-26 2010-04-13 Nikon Corporation Exposure apparatus and device manufacturing method
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP2006222165A (ja) * 2005-02-08 2006-08-24 Canon Inc 露光装置
CN102360170B (zh) 2005-02-10 2014-03-12 Asml荷兰有限公司 浸没液体、曝光装置及曝光方法
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
CN100541719C (zh) * 2005-04-25 2009-09-16 株式会社尼康 曝光方法和曝光装置、以及器件制造方法
WO2006115186A1 (ja) 2005-04-25 2006-11-02 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
JP2006319064A (ja) 2005-05-11 2006-11-24 Canon Inc 測定装置、露光方法及び装置
KR20080018158A (ko) * 2005-06-21 2008-02-27 가부시키가이샤 니콘 노광 장치 및 노광 방법, 메인터넌스 방법과 디바이스 제조방법
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
WO2007001848A2 (en) * 2005-06-24 2007-01-04 Sachem, Inc. High refractive index fluids with low absorption for immersion lithography
US7291569B2 (en) * 2005-06-29 2007-11-06 Infineon Technologies Ag Fluids for immersion lithography systems
US7420188B2 (en) * 2005-10-14 2008-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Exposure method and apparatus for immersion lithography
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
JPWO2007072818A1 (ja) * 2005-12-19 2009-05-28 株式会社ニコン 液体製造装置、液浸露光装置、及びデバイス製造方法
JP2007180450A (ja) * 2005-12-28 2007-07-12 Canon Inc 露光装置
SG143137A1 (en) 2006-11-13 2008-06-27 Asml Netherlands Bv Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
US7843548B2 (en) * 2006-11-13 2010-11-30 Asml Netherlands B.V. Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
US8045135B2 (en) * 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
JP2008311372A (ja) * 2007-06-13 2008-12-25 Nomura Micro Sci Co Ltd 超純水中の溶存窒素の測定方法及び溶存窒素測定装置
JP5180555B2 (ja) * 2007-10-04 2013-04-10 キヤノン株式会社 位置決め装置、露光装置及びデバイス製造方法
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
JP5482784B2 (ja) 2009-03-10 2014-05-07 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
TWI399620B (zh) * 2009-05-05 2013-06-21 財團法人國家同步輻射研究中心 立體光阻微結構的製作方法
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JP2012009596A (ja) * 2010-06-24 2012-01-12 Nikon Corp 液体供給装置、露光装置、液体供給方法、メンテナンス方法、及びデバイス製造方法
NL2007453A (en) * 2010-10-18 2012-04-19 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
NL2009899A (en) 2011-12-20 2013-06-24 Asml Netherlands Bv A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method.
WO2015152223A1 (ja) * 2014-03-31 2015-10-08 独立行政法人産業技術総合研究所 半導体の製造方法およびウエハ基板の洗浄方法
JP6070784B2 (ja) * 2015-07-14 2017-02-01 株式会社ニコン 液体供給装置、露光装置、液体供給方法、及びデバイス製造方法
JP6505534B2 (ja) * 2015-07-22 2019-04-24 株式会社平間理化研究所 現像液の管理方法及び装置

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Also Published As

Publication number Publication date
EP1697974A4 (en) 2009-07-29
US20060050257A1 (en) 2006-03-09
KR20060101529A (ko) 2006-09-25
TWI285796B (en) 2007-08-21
JP2005183693A (ja) 2005-07-07
EP1697974A1 (en) 2006-09-06
WO2005062351A1 (en) 2005-07-07
US7292309B2 (en) 2007-11-06
TW200532388A (en) 2005-10-01
KR100801354B1 (ko) 2008-02-05

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