KR100801354B1 - 노광장치 및 디바이스의 제조방법 - Google Patents

노광장치 및 디바이스의 제조방법 Download PDF

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Publication number
KR100801354B1
KR100801354B1 KR1020067011585A KR20067011585A KR100801354B1 KR 100801354 B1 KR100801354 B1 KR 100801354B1 KR 1020067011585 A KR1020067011585 A KR 1020067011585A KR 20067011585 A KR20067011585 A KR 20067011585A KR 100801354 B1 KR100801354 B1 KR 100801354B1
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KR
South Korea
Prior art keywords
carbon dioxide
exposure apparatus
fluid
optical system
substrate
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020067011585A
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English (en)
Korean (ko)
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KR20060101529A (ko
Inventor
토쿠유키 혼다
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20060101529A publication Critical patent/KR20060101529A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020067011585A 2003-12-19 2004-12-13 노광장치 및 디바이스의 제조방법 Expired - Fee Related KR100801354B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003422932A JP4323946B2 (ja) 2003-12-19 2003-12-19 露光装置
JPJP-P-2003-00422932 2003-12-19

Publications (2)

Publication Number Publication Date
KR20060101529A KR20060101529A (ko) 2006-09-25
KR100801354B1 true KR100801354B1 (ko) 2008-02-05

Family

ID=34708744

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KR1020067011585A Expired - Fee Related KR100801354B1 (ko) 2003-12-19 2004-12-13 노광장치 및 디바이스의 제조방법

Country Status (6)

Country Link
US (1) US7292309B2 (https=)
EP (1) EP1697974A4 (https=)
JP (1) JP4323946B2 (https=)
KR (1) KR100801354B1 (https=)
TW (1) TWI285796B (https=)
WO (1) WO2005062351A1 (https=)

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KR101520591B1 (ko) 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
TWI515770B (zh) 2003-06-19 2016-01-01 尼康股份有限公司 An exposure apparatus, an exposure method, and an element manufacturing method
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US7697110B2 (en) 2004-01-26 2010-04-13 Nikon Corporation Exposure apparatus and device manufacturing method
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WO2005122218A1 (ja) * 2004-06-09 2005-12-22 Nikon Corporation 露光装置及びデバイス製造方法
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP2006222165A (ja) * 2005-02-08 2006-08-24 Canon Inc 露光装置
CN102360170B (zh) 2005-02-10 2014-03-12 Asml荷兰有限公司 浸没液体、曝光装置及曝光方法
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
CN100541719C (zh) * 2005-04-25 2009-09-16 株式会社尼康 曝光方法和曝光装置、以及器件制造方法
WO2006115186A1 (ja) 2005-04-25 2006-11-02 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
JP2006319064A (ja) 2005-05-11 2006-11-24 Canon Inc 測定装置、露光方法及び装置
KR20080018158A (ko) * 2005-06-21 2008-02-27 가부시키가이샤 니콘 노광 장치 및 노광 방법, 메인터넌스 방법과 디바이스 제조방법
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
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US7420188B2 (en) * 2005-10-14 2008-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Exposure method and apparatus for immersion lithography
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
JPWO2007072818A1 (ja) * 2005-12-19 2009-05-28 株式会社ニコン 液体製造装置、液浸露光装置、及びデバイス製造方法
JP2007180450A (ja) * 2005-12-28 2007-07-12 Canon Inc 露光装置
SG143137A1 (en) 2006-11-13 2008-06-27 Asml Netherlands Bv Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
US7843548B2 (en) * 2006-11-13 2010-11-30 Asml Netherlands B.V. Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
US8045135B2 (en) * 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
JP2008311372A (ja) * 2007-06-13 2008-12-25 Nomura Micro Sci Co Ltd 超純水中の溶存窒素の測定方法及び溶存窒素測定装置
JP5180555B2 (ja) * 2007-10-04 2013-04-10 キヤノン株式会社 位置決め装置、露光装置及びデバイス製造方法
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
JP5482784B2 (ja) 2009-03-10 2014-05-07 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
TWI399620B (zh) * 2009-05-05 2013-06-21 財團法人國家同步輻射研究中心 立體光阻微結構的製作方法
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JP2012009596A (ja) * 2010-06-24 2012-01-12 Nikon Corp 液体供給装置、露光装置、液体供給方法、メンテナンス方法、及びデバイス製造方法
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WO2015152223A1 (ja) * 2014-03-31 2015-10-08 独立行政法人産業技術総合研究所 半導体の製造方法およびウエハ基板の洗浄方法
JP6070784B2 (ja) * 2015-07-14 2017-02-01 株式会社ニコン 液体供給装置、露光装置、液体供給方法、及びデバイス製造方法
JP6505534B2 (ja) * 2015-07-22 2019-04-24 株式会社平間理化研究所 現像液の管理方法及び装置

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JPH10154659A (ja) 1996-10-07 1998-06-09 Nikon Corp リソグラフィーアライナー、製造装置、または検査装置用の焦点及びチルト調節システム
JPH10303114A (ja) 1997-04-23 1998-11-13 Nikon Corp 液浸型露光装置
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Also Published As

Publication number Publication date
JP4323946B2 (ja) 2009-09-02
EP1697974A4 (en) 2009-07-29
US20060050257A1 (en) 2006-03-09
KR20060101529A (ko) 2006-09-25
TWI285796B (en) 2007-08-21
JP2005183693A (ja) 2005-07-07
EP1697974A1 (en) 2006-09-06
WO2005062351A1 (en) 2005-07-07
US7292309B2 (en) 2007-11-06
TW200532388A (en) 2005-10-01

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