JP4323946B2 - 露光装置 - Google Patents

露光装置 Download PDF

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Publication number
JP4323946B2
JP4323946B2 JP2003422932A JP2003422932A JP4323946B2 JP 4323946 B2 JP4323946 B2 JP 4323946B2 JP 2003422932 A JP2003422932 A JP 2003422932A JP 2003422932 A JP2003422932 A JP 2003422932A JP 4323946 B2 JP4323946 B2 JP 4323946B2
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JP
Japan
Prior art keywords
carbon dioxide
liquid
exposure apparatus
exposure
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003422932A
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English (en)
Japanese (ja)
Other versions
JP2005183693A (ja
JP2005183693A5 (enExample
Inventor
徳行 本多
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2003422932A priority Critical patent/JP4323946B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Priority to PCT/JP2004/018958 priority patent/WO2005062351A1/en
Priority to EP04807315A priority patent/EP1697974A4/en
Priority to KR1020067011585A priority patent/KR100801354B1/ko
Priority to US10/538,467 priority patent/US7292309B2/en
Priority to TW093139536A priority patent/TWI285796B/zh
Publication of JP2005183693A publication Critical patent/JP2005183693A/ja
Publication of JP2005183693A5 publication Critical patent/JP2005183693A5/ja
Application granted granted Critical
Publication of JP4323946B2 publication Critical patent/JP4323946B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2003422932A 2003-12-19 2003-12-19 露光装置 Expired - Fee Related JP4323946B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2003422932A JP4323946B2 (ja) 2003-12-19 2003-12-19 露光装置
EP04807315A EP1697974A4 (en) 2003-12-19 2004-12-13 EXPOSURE DEVICE AND COMPONENT MANUFACTURING METHOD
KR1020067011585A KR100801354B1 (ko) 2003-12-19 2004-12-13 노광장치 및 디바이스의 제조방법
US10/538,467 US7292309B2 (en) 2003-12-19 2004-12-13 Exposure apparatus and device manufacturing method
PCT/JP2004/018958 WO2005062351A1 (en) 2003-12-19 2004-12-13 Exposure apparatus and device manufacturing method
TW093139536A TWI285796B (en) 2003-12-19 2004-12-17 Exposure apparatus and device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003422932A JP4323946B2 (ja) 2003-12-19 2003-12-19 露光装置

Publications (3)

Publication Number Publication Date
JP2005183693A JP2005183693A (ja) 2005-07-07
JP2005183693A5 JP2005183693A5 (enExample) 2007-02-08
JP4323946B2 true JP4323946B2 (ja) 2009-09-02

Family

ID=34708744

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003422932A Expired - Fee Related JP4323946B2 (ja) 2003-12-19 2003-12-19 露光装置

Country Status (6)

Country Link
US (1) US7292309B2 (enExample)
EP (1) EP1697974A4 (enExample)
JP (1) JP4323946B2 (enExample)
KR (1) KR100801354B1 (enExample)
TW (1) TWI285796B (enExample)
WO (1) WO2005062351A1 (enExample)

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US7474218B2 (en) 2000-06-16 2009-01-06 Verisae, Inc. Method and system of asset identification and tracking for enterprise asset management
US7877235B2 (en) 2003-01-31 2011-01-25 Verisae, Inc. Method and system for tracking and managing various operating parameters of enterprise assets
US7440871B2 (en) 2002-12-09 2008-10-21 Verisae, Inc. Method and system for tracking and reporting emissions
KR101697896B1 (ko) 2003-04-11 2017-01-18 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법
JP4837556B2 (ja) * 2003-04-11 2011-12-14 株式会社ニコン 液浸リソグラフィにおける光学素子の洗浄方法
TW200509205A (en) 2003-05-23 2005-03-01 Nippon Kogaku Kk Exposure method and device-manufacturing method
KR101520591B1 (ko) 2003-06-13 2015-05-14 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
JP4437474B2 (ja) 2003-06-19 2010-03-24 株式会社ニコン 露光装置及びデバイス製造方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1491956B1 (en) 2003-06-27 2006-09-06 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1531362A3 (en) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Semiconductor manufacturing apparatus and pattern formation method
JP4295712B2 (ja) 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置製造方法
TWI605315B (zh) 2003-12-03 2017-11-11 Nippon Kogaku Kk Exposure device, exposure method, and device manufacturing method
JP4720506B2 (ja) 2003-12-15 2011-07-13 株式会社ニコン ステージ装置、露光装置、及び露光方法
WO2005071717A1 (ja) 2004-01-26 2005-08-04 Nikon Corporation 露光装置及びデバイス製造方法
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
CN103605262B (zh) * 2004-06-09 2016-06-29 株式会社尼康 曝光装置及其维护方法、以及元件制造方法
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP2006222165A (ja) * 2005-02-08 2006-08-24 Canon Inc 露光装置
JP5162254B2 (ja) * 2005-02-10 2013-03-13 エーエスエムエル ネザーランズ ビー．ブイ． 液浸リソグラフィシステム及びデバイス製造方法
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
CN100541719C (zh) * 2005-04-25 2009-09-16 株式会社尼康 曝光方法和曝光装置、以及器件制造方法
JP5125505B2 (ja) 2005-04-25 2013-01-23 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
JP2006319064A (ja) 2005-05-11 2006-11-24 Canon Inc 測定装置、露光方法及び装置
JP5045437B2 (ja) * 2005-06-21 2012-10-10 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
WO2007001848A2 (en) * 2005-06-24 2007-01-04 Sachem, Inc. High refractive index fluids with low absorption for immersion lithography
US7291569B2 (en) * 2005-06-29 2007-11-06 Infineon Technologies Ag Fluids for immersion lithography systems
US7420188B2 (en) * 2005-10-14 2008-09-02 Taiwan Semiconductor Manufacturing Company, Ltd. Exposure method and apparatus for immersion lithography
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
JPWO2007072818A1 (ja) * 2005-12-19 2009-05-28 株式会社ニコン 液体製造装置、液浸露光装置、及びデバイス製造方法
JP2007180450A (ja) * 2005-12-28 2007-07-12 Canon Inc 露光装置
US7843548B2 (en) * 2006-11-13 2010-11-30 Asml Netherlands B.V. Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
SG143137A1 (en) 2006-11-13 2008-06-27 Asml Netherlands Bv Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
JP2008311372A (ja) * 2007-06-13 2008-12-25 Nomura Micro Sci Co Ltd 超純水中の溶存窒素の測定方法及び溶存窒素測定装置
JP5180555B2 (ja) * 2007-10-04 2013-04-10 キヤノン株式会社 位置決め装置、露光装置及びデバイス製造方法
JP5097166B2 (ja) 2008-05-28 2012-12-12 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置及び装置の動作方法
JP5482784B2 (ja) * 2009-03-10 2014-05-07 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
TWI399620B (zh) * 2009-05-05 2013-06-21 Nat Synchrotron Radiation Res Ct 立體光阻微結構的製作方法
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JP2012009596A (ja) * 2010-06-24 2012-01-12 Nikon Corp 液体供給装置、露光装置、液体供給方法、メンテナンス方法、及びデバイス製造方法
NL2007453A (en) 2010-10-18 2012-04-19 Asml Netherlands Bv A fluid handling structure, a lithographic apparatus and a device manufacturing method.
NL2009899A (en) 2011-12-20 2013-06-24 Asml Netherlands Bv A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method.
US20170125240A1 (en) * 2014-03-31 2017-05-04 National Institute Of Advanced Industrial Science And Technology Method for manufacturing semiconductor and method for cleaning wafer substrate
JP6070784B2 (ja) * 2015-07-14 2017-02-01 株式会社ニコン 液体供給装置、露光装置、液体供給方法、及びデバイス製造方法
JP6505534B2 (ja) * 2015-07-22 2019-04-24 株式会社平間理化研究所 現像液の管理方法及び装置

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Also Published As

Publication number Publication date
EP1697974A1 (en) 2006-09-06
TW200532388A (en) 2005-10-01
JP2005183693A (ja) 2005-07-07
EP1697974A4 (en) 2009-07-29
TWI285796B (en) 2007-08-21
KR20060101529A (ko) 2006-09-25
US20060050257A1 (en) 2006-03-09
US7292309B2 (en) 2007-11-06
KR100801354B1 (ko) 2008-02-05
WO2005062351A1 (en) 2005-07-07

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