TWI285796B - Exposure apparatus and device manufacturing method - Google Patents
Exposure apparatus and device manufacturing method Download PDFInfo
- Publication number
- TWI285796B TWI285796B TW093139536A TW93139536A TWI285796B TW I285796 B TWI285796 B TW I285796B TW 093139536 A TW093139536 A TW 093139536A TW 93139536 A TW93139536 A TW 93139536A TW I285796 B TWI285796 B TW I285796B
- Authority
- TW
- Taiwan
- Prior art keywords
- fluid
- carbon dioxide
- exposure apparatus
- optical system
- unit
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000012530 fluid Substances 0.000 claims abstract description 35
- 230000003287 optical effect Effects 0.000 claims abstract description 34
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 32
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000002347 injection Methods 0.000 claims abstract description 13
- 239000007924 injection Substances 0.000 claims abstract description 13
- 238000007872 degassing Methods 0.000 claims description 10
- 238000005286 illumination Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000011144 upstream manufacturing Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 22
- 238000000034 method Methods 0.000 description 16
- 238000011084 recovery Methods 0.000 description 9
- 239000007788 liquid Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000009736 wetting Methods 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 230000008595 infiltration Effects 0.000 description 4
- 238000001764 infiltration Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003504 photosensitizing agent Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003422932A JP4323946B2 (ja) | 2003-12-19 | 2003-12-19 | 露光装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200532388A TW200532388A (en) | 2005-10-01 |
| TWI285796B true TWI285796B (en) | 2007-08-21 |
Family
ID=34708744
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093139536A TWI285796B (en) | 2003-12-19 | 2004-12-17 | Exposure apparatus and device manufacturing method |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7292309B2 (enExample) |
| EP (1) | EP1697974A4 (enExample) |
| JP (1) | JP4323946B2 (enExample) |
| KR (1) | KR100801354B1 (enExample) |
| TW (1) | TWI285796B (enExample) |
| WO (1) | WO2005062351A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI414909B (zh) * | 2007-10-04 | 2013-11-11 | Canon Kk | 定位設備、曝光設備、和製造裝置的方法 |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7512523B2 (en) | 2000-06-16 | 2009-03-31 | Verisae, Inc. | Refrigerant loss tracking and repair |
| EP1312003A4 (en) | 2000-06-16 | 2005-12-21 | Verisae | SYSTEM AND METHOD FOR MANAGING THE ASSETS OF AN ENTERPRISE |
| US7369968B2 (en) | 2000-06-16 | 2008-05-06 | Verisae, Inc. | Enterprise energy management system |
| US7474218B2 (en) | 2000-06-16 | 2009-01-06 | Verisae, Inc. | Method and system of asset identification and tracking for enterprise asset management |
| US7877235B2 (en) | 2003-01-31 | 2011-01-25 | Verisae, Inc. | Method and system for tracking and managing various operating parameters of enterprise assets |
| US7440871B2 (en) | 2002-12-09 | 2008-10-21 | Verisae, Inc. | Method and system for tracking and reporting emissions |
| KR101697896B1 (ko) | 2003-04-11 | 2017-01-18 | 가부시키가이샤 니콘 | 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침 액체를 유지하는 장치 및 방법 |
| JP4837556B2 (ja) * | 2003-04-11 | 2011-12-14 | 株式会社ニコン | 液浸リソグラフィにおける光学素子の洗浄方法 |
| TW200509205A (en) | 2003-05-23 | 2005-03-01 | Nippon Kogaku Kk | Exposure method and device-manufacturing method |
| KR101520591B1 (ko) | 2003-06-13 | 2015-05-14 | 가부시키가이샤 니콘 | 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법 |
| JP4437474B2 (ja) | 2003-06-19 | 2010-03-24 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
| US6809794B1 (en) | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
| EP1491956B1 (en) | 2003-06-27 | 2006-09-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| EP1531362A3 (en) * | 2003-11-13 | 2007-07-25 | Matsushita Electric Industrial Co., Ltd. | Semiconductor manufacturing apparatus and pattern formation method |
| JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置及び装置製造方法 |
| TWI605315B (zh) | 2003-12-03 | 2017-11-11 | Nippon Kogaku Kk | Exposure device, exposure method, and device manufacturing method |
| JP4720506B2 (ja) | 2003-12-15 | 2011-07-13 | 株式会社ニコン | ステージ装置、露光装置、及び露光方法 |
| WO2005071717A1 (ja) | 2004-01-26 | 2005-08-04 | Nikon Corporation | 露光装置及びデバイス製造方法 |
| US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
| CN103605262B (zh) * | 2004-06-09 | 2016-06-29 | 株式会社尼康 | 曝光装置及其维护方法、以及元件制造方法 |
| JP4752473B2 (ja) | 2004-12-09 | 2011-08-17 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
| JP2006222165A (ja) * | 2005-02-08 | 2006-08-24 | Canon Inc | 露光装置 |
| JP5162254B2 (ja) * | 2005-02-10 | 2013-03-13 | エーエスエムエル ネザーランズ ビー．ブイ． | 液浸リソグラフィシステム及びデバイス製造方法 |
| USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
| US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
| CN100541719C (zh) * | 2005-04-25 | 2009-09-16 | 株式会社尼康 | 曝光方法和曝光装置、以及器件制造方法 |
| JP5125505B2 (ja) | 2005-04-25 | 2013-01-23 | 株式会社ニコン | 露光方法及び露光装置、並びにデバイス製造方法 |
| JP2006319064A (ja) | 2005-05-11 | 2006-11-24 | Canon Inc | 測定装置、露光方法及び装置 |
| JP5045437B2 (ja) * | 2005-06-21 | 2012-10-10 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
| US20070085989A1 (en) * | 2005-06-21 | 2007-04-19 | Nikon Corporation | Exposure apparatus and exposure method, maintenance method, and device manufacturing method |
| WO2007001848A2 (en) * | 2005-06-24 | 2007-01-04 | Sachem, Inc. | High refractive index fluids with low absorption for immersion lithography |
| US7291569B2 (en) * | 2005-06-29 | 2007-11-06 | Infineon Technologies Ag | Fluids for immersion lithography systems |
| US7420188B2 (en) * | 2005-10-14 | 2008-09-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Exposure method and apparatus for immersion lithography |
| US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
| JPWO2007072818A1 (ja) * | 2005-12-19 | 2009-05-28 | 株式会社ニコン | 液体製造装置、液浸露光装置、及びデバイス製造方法 |
| JP2007180450A (ja) * | 2005-12-28 | 2007-07-12 | Canon Inc | 露光装置 |
| US7843548B2 (en) * | 2006-11-13 | 2010-11-30 | Asml Netherlands B.V. | Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system |
| SG143137A1 (en) | 2006-11-13 | 2008-06-27 | Asml Netherlands Bv | Conduit system for a lithographic apparatus, lithographic apparatus, pump, and method for substantially reducing vibrations in a conduit system |
| US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
| JP2008311372A (ja) * | 2007-06-13 | 2008-12-25 | Nomura Micro Sci Co Ltd | 超純水中の溶存窒素の測定方法及び溶存窒素測定装置 |
| JP5097166B2 (ja) | 2008-05-28 | 2012-12-12 | エーエスエムエル ネザーランズ ビー．ブイ． | リソグラフィ装置及び装置の動作方法 |
| JP5482784B2 (ja) * | 2009-03-10 | 2014-05-07 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
| TWI399620B (zh) * | 2009-05-05 | 2013-06-21 | Nat Synchrotron Radiation Res Ct | 立體光阻微結構的製作方法 |
| NL2005655A (en) | 2009-12-09 | 2011-06-14 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
| JP2012009596A (ja) * | 2010-06-24 | 2012-01-12 | Nikon Corp | 液体供給装置、露光装置、液体供給方法、メンテナンス方法、及びデバイス製造方法 |
| NL2007453A (en) | 2010-10-18 | 2012-04-19 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
| NL2009899A (en) | 2011-12-20 | 2013-06-24 | Asml Netherlands Bv | A pump system, a carbon dioxide supply system, an extraction system, a lithographic apparatus and a device manufacturing method. |
| US20170125240A1 (en) * | 2014-03-31 | 2017-05-04 | National Institute Of Advanced Industrial Science And Technology | Method for manufacturing semiconductor and method for cleaning wafer substrate |
| JP6070784B2 (ja) * | 2015-07-14 | 2017-02-01 | 株式会社ニコン | 液体供給装置、露光装置、液体供給方法、及びデバイス製造方法 |
| JP6505534B2 (ja) * | 2015-07-22 | 2019-04-24 | 株式会社平間理化研究所 | 現像液の管理方法及び装置 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175124A (en) * | 1991-03-25 | 1992-12-29 | Motorola, Inc. | Process for fabricating a semiconductor device using re-ionized rinse water |
| US5825043A (en) | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
| JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
| JP3817836B2 (ja) * | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
| US5900354A (en) * | 1997-07-03 | 1999-05-04 | Batchelder; John Samuel | Method for optical inspection and lithography |
| JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
| AU2747999A (en) * | 1998-03-26 | 1999-10-18 | Nikon Corporation | Projection exposure method and system |
| JP4608876B2 (ja) | 2002-12-10 | 2011-01-12 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
| US7029832B2 (en) * | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
| ATE426914T1 (de) | 2003-04-07 | 2009-04-15 | Nikon Corp | Belichtungsgerat und verfahren zur herstellung einer vorrichtung |
| US7684008B2 (en) | 2003-06-11 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| TWI245163B (en) * | 2003-08-29 | 2005-12-11 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
| EP1670040B1 (en) * | 2003-09-29 | 2012-08-08 | Nikon Corporation | Projection exposure apparatus, projection exposure method, and device manufacturing method |
| JP2005136374A (ja) * | 2003-10-06 | 2005-05-26 | Matsushita Electric Ind Co Ltd | 半導体製造装置及びそれを用いたパターン形成方法 |
-
2003
- 2003-12-19 JP JP2003422932A patent/JP4323946B2/ja not_active Expired - Fee Related
-
2004
- 2004-12-13 EP EP04807315A patent/EP1697974A4/en not_active Withdrawn
- 2004-12-13 KR KR1020067011585A patent/KR100801354B1/ko not_active Expired - Fee Related
- 2004-12-13 WO PCT/JP2004/018958 patent/WO2005062351A1/en not_active Ceased
- 2004-12-13 US US10/538,467 patent/US7292309B2/en not_active Expired - Fee Related
- 2004-12-17 TW TW093139536A patent/TWI285796B/zh not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI414909B (zh) * | 2007-10-04 | 2013-11-11 | Canon Kk | 定位設備、曝光設備、和製造裝置的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1697974A1 (en) | 2006-09-06 |
| TW200532388A (en) | 2005-10-01 |
| JP2005183693A (ja) | 2005-07-07 |
| EP1697974A4 (en) | 2009-07-29 |
| KR20060101529A (ko) | 2006-09-25 |
| JP4323946B2 (ja) | 2009-09-02 |
| US20060050257A1 (en) | 2006-03-09 |
| US7292309B2 (en) | 2007-11-06 |
| KR100801354B1 (ko) | 2008-02-05 |
| WO2005062351A1 (en) | 2005-07-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |