JP4322949B2 - 熱硬化性樹脂組成物及び光半導体封止材 - Google Patents

熱硬化性樹脂組成物及び光半導体封止材 Download PDF

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JP4322949B2
JP4322949B2 JP2007540996A JP2007540996A JP4322949B2 JP 4322949 B2 JP4322949 B2 JP 4322949B2 JP 2007540996 A JP2007540996 A JP 2007540996A JP 2007540996 A JP2007540996 A JP 2007540996A JP 4322949 B2 JP4322949 B2 JP 4322949B2
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resin composition
thermosetting resin
group
parts
weight
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JPWO2007046399A1 (ja
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久尚 山本
隆之 松田
秀明 高橋
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Asahi Kasei Corp
Asahi Kasei Chemicals Corp
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Asahi Kasei Corp
Asahi Kasei Chemicals Corp
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    • C08G59/22—Di-epoxy compounds
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