JP4317251B2 - 放射線像変換パネル及び放射線イメージセンサ - Google Patents
放射線像変換パネル及び放射線イメージセンサ Download PDFInfo
- Publication number
- JP4317251B2 JP4317251B2 JP2007327665A JP2007327665A JP4317251B2 JP 4317251 B2 JP4317251 B2 JP 4317251B2 JP 2007327665 A JP2007327665 A JP 2007327665A JP 2007327665 A JP2007327665 A JP 2007327665A JP 4317251 B2 JP4317251 B2 JP 4317251B2
- Authority
- JP
- Japan
- Prior art keywords
- scintillator
- aluminum substrate
- metal film
- radiation
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000005855 radiation Effects 0.000 title claims description 83
- 238000006243 chemical reaction Methods 0.000 title claims description 31
- 239000000758 substrate Substances 0.000 claims description 91
- 229910052782 aluminium Inorganic materials 0.000 claims description 89
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 88
- 229910052751 metal Inorganic materials 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 65
- 230000001681 protective effect Effects 0.000 claims description 44
- 230000003014 reinforcing effect Effects 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 9
- 238000001579 optical reflectometry Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 description 13
- 230000007797 corrosion Effects 0.000 description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 10
- -1 argon ions Chemical class 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 229910052786 argon Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 8
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000001228 spectrum Methods 0.000 description 5
- 238000000992 sputter etching Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000004918 carbon fiber reinforced polymer Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000000921 elemental analysis Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920002396 Polyurea Polymers 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Measurement Of Radiation (AREA)
- Conversion Of X-Rays Into Visible Images (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/812,233 US7468514B1 (en) | 2007-06-15 | 2007-06-15 | Radiation image conversion panel, scintillator panel, and radiation image sensor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008309770A JP2008309770A (ja) | 2008-12-25 |
| JP2008309770A5 JP2008309770A5 (enExample) | 2009-02-12 |
| JP4317251B2 true JP4317251B2 (ja) | 2009-08-19 |
Family
ID=40131434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007327665A Active JP4317251B2 (ja) | 2007-06-15 | 2007-12-19 | 放射線像変換パネル及び放射線イメージセンサ |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7468514B1 (enExample) |
| JP (1) | JP4317251B2 (enExample) |
| KR (3) | KR101042065B1 (enExample) |
| CN (2) | CN102819032B (enExample) |
| CA (1) | CA2633667C (enExample) |
Families Citing this family (32)
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| EP1645671B2 (de) * | 2004-10-08 | 2019-10-23 | SGL Carbon SE | Polymergebundene fasergelege |
| CN101604118B (zh) * | 2008-12-31 | 2012-07-04 | 中国工程物理研究院流体物理研究所 | 一种将高能x射线图像转换为可见光图像的装置 |
| WO2010103917A1 (ja) | 2009-03-13 | 2010-09-16 | コニカミノルタエムジー株式会社 | 放射線検出装置 |
| US8957380B2 (en) * | 2009-06-30 | 2015-02-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared attenuating or blocking layer in optical proximity sensor |
| JP5577644B2 (ja) * | 2009-08-05 | 2014-08-27 | コニカミノルタ株式会社 | 放射線画像検出装置およびその製造方法 |
| JP2011137665A (ja) * | 2009-12-26 | 2011-07-14 | Canon Inc | シンチレータパネル及び放射線撮像装置とその製造方法、ならびに放射線撮像システム |
| GB2477346B (en) * | 2010-02-01 | 2016-03-23 | Scintacor Ltd | Scintillator assembly for use in digital x-ray imaging |
| JP5801891B2 (ja) | 2010-07-30 | 2015-10-28 | パルセータ, エルエルシーPulsetor, Llc | 電子イメージングを用いて試料の画像を作成する荷電粒子線装置及び方法 |
| EP2739958B1 (en) | 2011-08-05 | 2016-01-20 | Pulsetor, LLC | Electron detector including one or more intimately-coupled scintillator-photomultiplier combinations, and electron microscope employing same |
| US8829454B2 (en) | 2012-02-27 | 2014-09-09 | Analog Devices, Inc. | Compact sensor module |
| JP5922518B2 (ja) * | 2012-07-20 | 2016-05-24 | 浜松ホトニクス株式会社 | シンチレータパネル及び放射線検出器 |
| US9116022B2 (en) | 2012-12-07 | 2015-08-25 | Analog Devices, Inc. | Compact sensor module |
| KR101455382B1 (ko) * | 2012-12-26 | 2014-10-27 | 한국전기연구원 | 휘진성 형광체를 이용한 하이브리드 엑스-선 검출 장치 |
| EP3197983B1 (en) | 2014-09-25 | 2023-06-07 | Koninklijke Philips N.V. | Detection device for detecting gamma or x-ray radiation |
| KR101601530B1 (ko) * | 2014-11-06 | 2016-03-09 | 현대자동차주식회사 | 전파 투과형 다층 광학막 |
| US10670741B2 (en) * | 2015-03-20 | 2020-06-02 | Varex Imaging Corporation | Scintillator |
| WO2016167334A1 (ja) * | 2015-04-16 | 2016-10-20 | 三菱化学株式会社 | 放射線像変換スクリーン、フラットパネルディテクタ、放射線検出装置、及びシンチレータ |
| US10074624B2 (en) | 2015-08-07 | 2018-09-11 | Analog Devices, Inc. | Bond pads with differently sized openings |
| JP6504997B2 (ja) | 2015-11-05 | 2019-04-24 | 浜松ホトニクス株式会社 | 放射線像変換パネル、放射線像変換パネルの製造方法、放射線イメージセンサ及び放射線イメージセンサの製造方法 |
| JP6676372B2 (ja) * | 2015-12-28 | 2020-04-08 | 株式会社Ｓ−Ｎａｎｏｔｅｃｈ Ｃｏ−Ｃｒｅａｔｉｏｎ | シンチレータ及び電子検出器 |
| DE112017003014B4 (de) | 2016-06-16 | 2025-03-06 | Ngk Insulators, Ltd. | Leuchtstoffvorrichtung und Fluoreszenz aussendende Beleuchtungsvorrichtung |
| JP6534497B2 (ja) * | 2017-03-22 | 2019-06-26 | 富士フイルム株式会社 | 放射線検出器及び放射線画像撮影装置 |
| JP6707130B2 (ja) * | 2017-03-22 | 2020-06-10 | 富士フイルム株式会社 | 放射線検出器及び放射線画像撮影装置 |
| US11056455B2 (en) | 2017-08-01 | 2021-07-06 | Analog Devices, Inc. | Negative fillet for mounting an integrated device die to a carrier |
| JP6433560B1 (ja) | 2017-09-27 | 2018-12-05 | 浜松ホトニクス株式会社 | シンチレータパネル及び放射線検出器 |
| JP6433561B1 (ja) * | 2017-09-27 | 2018-12-05 | 浜松ホトニクス株式会社 | シンチレータパネル及び放射線検出器 |
| WO2020118102A1 (en) | 2018-12-06 | 2020-06-11 | Analog Devices, Inc. | Shielded integrated device packages |
| EP3891793A4 (en) | 2018-12-06 | 2022-10-05 | Analog Devices, Inc. | INTEGRATED DEVICE PACKAGES WITH PASSIVE DEVICE ARRANGEMENTS |
| JP7057299B2 (ja) | 2019-02-21 | 2022-04-19 | ニチバン株式会社 | 伸縮性パッドを用いた医療用貼付材 |
| JP2021032817A (ja) * | 2019-08-28 | 2021-03-01 | キヤノン電子管デバイス株式会社 | シンチレータパネル、および放射線検出器 |
| US11664340B2 (en) | 2020-07-13 | 2023-05-30 | Analog Devices, Inc. | Negative fillet for mounting an integrated device die to a carrier |
| CN115107135A (zh) * | 2021-03-22 | 2022-09-27 | 云南传承木业有限公司 | 一种无醛强化木地板的制作方法 |
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2007
- 2007-06-15 US US11/812,233 patent/US7468514B1/en active Active
- 2007-12-19 JP JP2007327665A patent/JP4317251B2/ja active Active
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2008
- 2008-06-05 CA CA2633667A patent/CA2633667C/en active Active
- 2008-06-12 KR KR1020080055234A patent/KR101042065B1/ko active Active
- 2008-06-16 CN CN201210285454.9A patent/CN102819032B/zh active Active
- 2008-06-16 CN CN2008101099979A patent/CN101324671B/zh active Active
- 2008-11-10 US US12/268,080 patent/US7812315B2/en active Active
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2011
- 2011-02-07 KR KR1020110010623A patent/KR101294870B1/ko active Active
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2012
- 2012-05-23 KR KR1020120054990A patent/KR101294880B1/ko active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101294870B1 (ko) | 2013-08-08 |
| US20090072160A1 (en) | 2009-03-19 |
| KR101294880B1 (ko) | 2013-08-08 |
| KR20110031442A (ko) | 2011-03-28 |
| US7468514B1 (en) | 2008-12-23 |
| CA2633667C (en) | 2012-03-13 |
| US20080308736A1 (en) | 2008-12-18 |
| JP2008309770A (ja) | 2008-12-25 |
| CN101324671B (zh) | 2012-10-03 |
| KR101042065B1 (ko) | 2011-06-16 |
| US7812315B2 (en) | 2010-10-12 |
| CN101324671A (zh) | 2008-12-17 |
| KR20120081045A (ko) | 2012-07-18 |
| CA2633667A1 (en) | 2008-12-15 |
| CN102819032A (zh) | 2012-12-12 |
| CN102819032B (zh) | 2015-11-25 |
| KR20080110507A (ko) | 2008-12-18 |
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