US20080308736A1 - Radiation image conversion panel, scintillator panel, and radiation image sensor - Google Patents
Radiation image conversion panel, scintillator panel, and radiation image sensor Download PDFInfo
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- US20080308736A1 US20080308736A1 US11/812,233 US81223307A US2008308736A1 US 20080308736 A1 US20080308736 A1 US 20080308736A1 US 81223307 A US81223307 A US 81223307A US 2008308736 A1 US2008308736 A1 US 2008308736A1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
Definitions
- the present invention relates to a radiation image conversion panel, a scintillator panel, and a radiation image sensor which are used in medical and industrial x-ray imaging and the like.
- x-ray sensitive films have conventionally been in use for medical and industrial x-ray imaging
- radiation imaging systems using radiation detectors have been coming into widespread use from the viewpoint of their convenience and storability of imaging results.
- pixel data formed by two-dimensional radiations are acquired by a radiation detector as an electric signal, which is then processed by a processor, so as to be displayed on a monitor.
- a typical radiation detector is one having a structure bonding a radiation image conversion panel (which will be referred to as “scintillator panel” in the following as the case may be), in which a scintillator for converting a radiation into visible light is formed on a substrate such as aluminum, glass, or fused silica, to an image pickup device.
- a radiation incident thereon from the substrate side is converted into light by the scintillator, and thus obtained light is detected by the image pickup device.
- a stimulable phosphor is formed on an aluminum substrate having a surface formed with an alumite layer.
- the radiation image conversion panel having a stimulable phosphor formed on a substrate will be referred to as “imaging plate” in the following as the case may be.
- the alumite layer has a low reflectance for the light emitted from a scintillator or a phosphor such as stimulable phosphor, whereby the radiation image conversion panel may fail to attain a sufficiently high luminance.
- cracks, pinholes, and the like may be formed in the alumite layer by the heat generated when vapor-depositing the scintillator or stimulable phosphor onto the aluminum substrate, for example.
- the aluminum substrate and an alkali halide scintillator or stimulable phosphor may react with each other, thereby corroding the aluminum substrate.
- the alumite layer may corrode by reacting with the scintillator.
- the corrosion affects resulting images. Even if only a minute point is corroded, the reliability of a captured image utilized for an image analysis will deteriorate. The corrosion may increase as time passes. While the radiation image conversion panel is required to have uniform luminance and resolution characteristics within the substrate surface, the substrate is harder to manufacture as it is larger in size.
- the radiation image conversion panel in accordance with the present invention comprises an aluminum substrate; an alumite layer formed on a surface of the aluminum substrate; a metal film, provided on the alumite layer, having a radiation transparency and a light reflectivity; a protective film covering the metal film and having a radiation transparency and a light transparency; and a converting part provided on the protective film and adapted to convert a radiation image.
- the scintillator panel in accordance with the present invention comprises an aluminum substrate; an alumite layer formed on a surface of the aluminum substrate; a metal film, provided on the alumite layer, having a radiation transparency and a light reflectivity; a protective film covering the metal film and having a radiation transparency and a light transparency; and a scintillator provided on the protective film.
- the radiation image sensor in accordance with the present invention comprises a radiation image conversion panel including an aluminum substrate, an alumite layer formed on a surface of the aluminum substrate, a metal film which is provided on the alumite layer and has a radiation transparency and a light reflectivity, a protective film covering the metal film and having a radiation transparency and a light transparency, and a converting part provided on the protective film and adapted to convert a radiation image; and an image pickup device for converting light emitted from the converting part of the radiation image conversion panel into an electric signal.
- FIG. 1 is a partly broken perspective view schematically showing a scintillator panel in accordance with a first embodiment
- FIG. 2 is a sectional view taken along the line II-II shown in FIG. 1 ;
- FIG. 3 is a graph showing an example of AES spectrum of the alumite layer in the scintillator panel in accordance with the first embodiment
- FIG. 4 is a graph showing an example of AES spectrum of the metal film in the scintillator panel in accordance with the first embodiment
- FIGS. 5A to 5C are process sectional views schematically showing an example of the method of manufacturing a scintillator panel in accordance with the first embodiment
- FIGS. 6A to 6D are process sectional views schematically showing the example of the method of manufacturing a scintillator panel in accordance with the first embodiment
- FIG. 7 is a diagram showing an example of radiation image sensor including the scintillator panel in accordance with the first embodiment
- FIG. 8 is a view showing another example of radiation image sensor including the scintillator panel in accordance with the first embodiment
- FIG. 9 is a sectional view schematically showing the scintillator panel in accordance with a second embodiment
- FIG. 10 is a sectional view schematically showing the scintillator panel in accordance with a third embodiment
- FIG. 11 is a cross-sectional SEM photograph of an example of the scintillator panel in accordance with the third embodiment.
- FIG. 12 is a sectional view schematically showing the scintillator panel in accordance with a fourth embodiment
- FIG. 13 is a sectional view schematically showing the scintillator panel in accordance with a fifth embodiment.
- FIG. 14 is a sectional view schematically showing the scintillator panel in accordance with a sixth embodiment.
- FIG. 1 is a partly broken perspective view showing a scintillator panel (an example of radiation image conversion panel) in accordance with a first embodiment.
- FIG. 2 is a sectional view taken along the line II-II shown in FIG. 1 .
- the scintillator panel 10 comprises an aluminum substrate 12 , an alumite layer 14 formed on a surface of the aluminum substrate 12 , and an intermediate film 16 which is provided on the alumite layer 14 and has a radiation transparency.
- the alumite layer 14 and intermediate film 16 are in close contact with each other.
- the scintillator panel 10 also includes a metal film 18 which is provided on the intermediate film 16 and has a radiation transparency and a light reflectivity, an oxide layer 20 covering the metal film 18 and having a radiation transparency and a light transparency, a protective film 22 covering the oxide layer 20 and having a radiation transparency and a light transparency, and a scintillator 24 (an example of a converting part adapted to convert a radiation image) provided on the protective film 22 .
- the intermediate film 16 , metal film 18 , oxide layer 20 , protective film 22 , and scintillator 24 are in close contact with each other.
- the aluminum substrate 12 , alumite layer 14 , intermediate film 16 , metal film 18 , and oxide layer 20 are totally sealed with the protective film 22 .
- the protective film 22 prevents the metal film 18 from corroding because of pinholes and the like formed in the oxide layer 20 .
- the aluminum substrate 12 , alumite layer 14 , intermediate film 16 , metal film 18 , oxide layer 20 , protective film 22 , and scintillator 24 are totally sealed with a protective film 26 .
- the scintillator 24 converts the radiation image into a light image.
- the radiation 30 successively passes through the protective film 26 , protective film 22 , aluminum substrate 12 , alumite layer 14 , intermediate film 16 , metal film 18 , oxide layer 20 , and protective film 22 , thereby reaching the scintillator 24 .
- the light 32 emitted from the scintillator 24 is transmitted through the protective film 26 to the outside, while passing through the protective film 22 , so as to be reflected by the metal film 18 and oxide layer 20 to the outside.
- the scintillator panel 10 is used for medical and industrial x-ray imaging and the like.
- the aluminum substrate 12 is a substrate mainly made of aluminum, but may contain impurities and the like.
- the thickness of the aluminum substrate 12 is 0.3 to 1.0 mm.
- the scintillator 24 tends to be easy to peel off as the aluminum substrate 12 bends.
- the thickness of the aluminum substrate 12 exceeds 1.0 mm, the transmittance of the radiation 30 tends to decrease.
- the alumite layer 14 is formed by anodic oxidation of aluminum, and is made of a porous aluminum oxide.
- the alumite layer 14 makes it harder to damage the aluminum substrate 12 . If the aluminum substrate 12 is damaged, the reflectance of the aluminum substrate 12 will be less than a desirable value, whereby no uniform reflectance will be obtained within the surface of the aluminum substrate 12 . Whether the aluminum substrate 12 is damaged or not can be inspected visually, for example.
- the alumite layer 14 may be formed on the aluminum substrate 12 on only one side to be formed with the scintillator 24 , on both sides of the aluminum substrate 12 , or such as to cover the aluminum substrate 12 as a whole.
- Forming the alumite layer 14 on both sides of the aluminum substrate 12 can reduce the warpage and flexure of the aluminum substrate 12 , and thus can prevent the scintillator 24 from being unevenly vapor-deposited. Forming the alumite layer 14 can also erase streaks occurring when forming the aluminum substrate 12 by rolling. Therefore, even when a reflecting film (metal film 18 and oxide layer 20 ) is formed on the aluminum substrate 12 , a uniform reflectance can be obtained within the surface of the aluminum substrate 12 in the reflecting film.
- the thickness of the alumite layer 14 is 10 to 5000 nm. When the thickness of the alumite layer 14 is less than 10 nm, the damage prevention effect of the aluminum substrate 12 tends to decrease.
- the alumite layer 14 When the thickness of the alumite layer 14 exceeds 5000 nm, the alumite layer 14 tends to peel off in particular in corner parts of the aluminum substrate 12 , thereby causing large cracks in the alumite layer 14 and deteriorating the moisture resistance of the alumite layer 14 .
- the thickness of the alumite layer 14 is 1000 nm. The thickness of the alumite layer 14 is appropriately determined according to the size and thickness of the aluminum substrate 12 .
- FIG. 3 is a graph showing an example of AES spectrum of the alumite layer in the scintillator panel in accordance with the first embodiment.
- This example conducts an element analysis in the thickness direction of the alumite layer 14 by sputter-etching the alumite layer 14 with argon ions for 31 minutes. In this case, aluminum, oxygen, and argon are detected.
- argon derives from the argon ions at the time of sputter etching, and thus is not an element contained in the alumite layer 14 . Therefore, the alumite layer 14 in this example contains aluminum and oxygen.
- the intermediate film 16 and protective films 22 and 26 are organic or inorganic films, which may be made of materials different from each other or the same material.
- the intermediate film 16 and protective films 22 and 26 are made of polyparaxylylene, for example, but may also be of xylylene-based materials such as polymonochloroparaxylylene, polydichloroparaxylylene, polytetrachloroparaxylylene, polyfluoroparaxylylene, polydimethylparaxylylene, and polydiethylparaxylylene.
- the intermediate film 16 and protective films 22 and 26 may be made of polyurea, polyimide, and the like, for example, or inorganic materials such as LiF, MgF 2 , SiO 2 , Al 2 O 3 , TiO 2 , MgO, and SiN.
- the intermediate film 16 and protective films 22 and 26 may also be formed by combining inorganic and organic films.
- the intermediate film 16 and protective films 22 and 26 have a thickness of 10 ⁇ m each.
- the intermediate film 16 reduces minute irregularities of the alumite layer 14 , thereby advantageously acting for forming the metal film 18 having a uniform thickness on the alumite layer 14 .
- the metal film 18 is constructed by Al, for example, but may also be made of Ag, Cr, Cu, Ni, Ti, Mg, Rh, Pt, Au, or the like. Among them, Al or Ag is preferred. The metal film 18 may also contain elements such as oxygen other than metal elements.
- the metal film 18 may be constituted by a plurality of metal films, e.g., a Cr film and an Au film provided on the Cr film. Preferably, the thickness of the metal film 18 is 50 to 200 nm. In one example, the thickness of the metal film 18 is 70 nm.
- AES Alger Electron Spectroscopy
- FIG. 4 is a graph showing an example of AES spectrum of the metal film in the scintillator panel in accordance with the first embodiment.
- This example conducts an element analysis in the thickness direction of the metal layer 18 by sputter-etching the metal film 18 with argon ions for 20 minutes. In this case, aluminum, oxygen, and argon are detected.
- argon derives from the argon ions at the time of sputter etching, and is not an element contained in the metal film 18 .
- the metal film 18 can clearly be distinguished from the alumite layer 14 in view of their AES spectra forms.
- the oxide layer 20 is made of a metal oxide, SiO 2 , TiO 2 , or the like, for example.
- the oxide layer 20 may be constituted by a plurality of oxide layers made of materials different from each other, e.g., an SiO 2 film and a TiO 2 film.
- the thickness of the SiO 2 film is 80 nm while the thickness of the TiO 2 film is 50 nm.
- the thickness and number of laminated layers of the SiO 2 and TiO 2 films are determined in view of the reflectance for the wavelength of light 32 emitted from the scintillator 24 .
- the oxide layer 20 also functions to prevent the metal film 18 from corroding.
- the scintillator 24 is smaller than the aluminum film 12 when seen in the thickness direction of the aluminum substrate 12 .
- the scintillator 24 is constituted by a phosphor which converts the radiation into visible light, and is made of a columnar crystal or the like of CsI doped with Tl, Na, or the like.
- the scintillator 24 has a structure provided with a forest of columnar crystals.
- the scintillator 24 may also be made of Tl-doped NaI, Tl-doped KI, or Eu-doped LiI.
- a stimulable phosphor such as Eu-doped CsBr may be used in place of the scintillator 24 .
- the thickness of the scintillator 24 is preferably 100 to 1000 ⁇ m, more preferably 450 to 550 ⁇ m.
- the average column diameter of the columnar crystals constituting the scintillator 24 is 3 to 10 ⁇ m.
- the scintillator panel 10 comprises the aluminum substrate 12 ; the alumite layer 14 formed on the surface of the aluminum substrate 12 ; the metal film 18 , provided on the alumite layer 14 , having a radiation transparency and a light reflectivity; the protective film 22 covering the metal film 18 and having a radiation transparency and a light transparency; and the scintillator 24 provided on the protective film 22 . Therefore, the light 32 emitted from the scintillator 24 is reflected by the metal film 18 , whereby the scintillator panel 10 can attain a high luminance.
- the metal film 18 and protective film 22 are provided between the alumite layer 14 and scintillator 24 , the aluminum substrate 12 and scintillator 24 can be kept from reacting with each other even if the alumite layer 14 is formed with cracks, pinholes, and the like. As a consequence, the aluminum substrate 12 can be prevented from corroding. Forming the alumite layer 14 can further erase damages to the surface of the aluminum substrate 12 , whereby uniform luminance and resolution characteristics can be obtained within the surface of the scintillator panel 10 .
- the scintillator panel 10 further comprises the radiation-transparent intermediate film 16 provided between the alumite layer 14 and metal film 18 .
- This can flatten the surface of the alumite layer 14 , thereby improving the flatness of the metal film 18 . Therefore, the in-surface uniformity in reflectance of the metal film 18 improves. It can also enhance the adhesion between the alumite layer 14 and metal film 18 . It can further prevent moisture, scintillator constituent materials, and the like from passing through cracks, pinholes, and the like formed in the alumite layer 14 . Therefore, the aluminum substrate 12 is further prevented from corroding.
- the scintillator panel 10 further comprises the oxide layer 20 covering the metal film 18 and having a radiation transparency and a light transparency. This can improve the moisture resistance of the metal film 18 and prevent the metal film 18 from being damaged. It can also enhance the reflectance of the metal film 18 .
- FIGS. 5A to 5C and 6 A to 6 D are process sectional views schematically showing an example of the method of manufacturing a scintillator panel in accordance with the first embodiment.
- the method of manufacturing the scintillator panel 10 will now be explained with reference to FIGS. 5A to 5C and 6 A to 6 D.
- the aluminum substrate 12 is prepared.
- the alumite layer 14 is formed by anodic oxidation on a surface of the aluminum substrate 12 .
- the aluminum substrate 12 is electrolyzed by an anode in an electrolyte such as dilute sulfuric acid, so as to be oxidized.
- the alumite layer 14 may be dipped in a dye, so as to be colored. This can improve the resolution or enhance the luminance.
- the alumite layer 14 is subjected to a sealing process for filling the fine holes.
- the intermediate film 16 is formed on the alumite layer 14 by using CVD.
- the metal film 18 is formed on the intermediate film 16 by using vacuum vapor deposition.
- the metal film 18 is made of aluminum having a purity of 99.9%, for example.
- the oxide layer 20 is formed on the metal film 18 .
- the protective film 22 is formed by using CVD so as to seal the aluminum substrate 12 , alumite layer 14 , intermediate film 16 , metal film 18 , and oxide layer 20 as a whole. Further, as shown in FIG.
- the scintillator 24 is formed on the protective film 22 on the oxide layer 20 by using vapor deposition.
- the protective film 26 is formed by using CVD so as to seal the aluminum substrate 12 , alumite layer 14 , intermediate film 16 , metal film 18 , oxide layer 20 , protective film 22 , and scintillator 24 as a whole.
- the sealing with the protective films 22 and 26 can be realized by lifting the side of the aluminum substrate 12 opposite from the scintillator forming surface from a substrate holder at the time of CVD.
- An example of such method is one disclosed in U.S. Pat. No. 6,777,690. This method lifts the aluminum substrate 12 by using pins. In this case, no protective film is formed on minute contact surfaces between the aluminum substrate 12 and the pins.
- FIG. 7 is a diagram showing an example of radiation image sensor including the scintillator panel in accordance with the first embodiment.
- the radiation image sensor 100 shown in FIG. 7 comprises the scintillator panel 10 and an image pickup device 70 which converts the light 32 emitted from the scintillator 24 of the scintillator panel 10 into an electric signal.
- the light 32 emitted from the scintillator 24 is reflected by a mirror 50 , so as to be made incident on a lens 60 .
- the light 32 is converged by the lens 60 , so as to be made incident on the image pickup device 70 .
- One or a plurality of lenses 60 may be provided.
- the radiation 30 emitted from a radiation source 40 such as x-ray source is transmitted through an object to be inspected which is not depicted.
- the transmitted radiation image is made incident on the scintillator 24 of the scintillator panel 10 .
- the scintillator 24 emits a visible light image (the light 32 having a wavelength to which the image pickup device 70 is sensitive) corresponding to the radiation image.
- the light 32 emitted from the scintillator 24 is made incident on the image pickup device 70 by way of the mirror 50 and lens 60 .
- CCDs, flat panel image sensors, and the like can be used as the image pickup device 70 .
- an electronic device 80 receives the electric signal from the image pickup device 70 , whereby the electric signal is transmitted to a workstation 90 through a lead 36 .
- the workstation 90 analyzes the electric signal, and outputs an image onto a display.
- the radiation image sensor 100 comprises the scintillator panel 10 and the image pickup device 70 adapted to convert the light 32 emitted from the scintillator 24 of the scintillator panel 10 into the electric signal. Therefore, the radiation image sensor 100 can prevent the aluminum substrate 12 from corroding, while having a high luminance.
- FIG. 8 is a view showing another example of radiation image sensor including the scintillator panel in accordance with the first embodiment.
- the radiation image sensor 100 a shown in FIG. 8 comprises the scintillator panel 10 , and an image pickup device 70 which is arranged so as to oppose the scintillator panel 10 and adapted to convert light emitted from the scintillator 24 into an electric signal.
- the scintillator 24 is arranged between the aluminum substrate 12 and image pickup device 70 .
- the light-receiving surface of the image pickup device 70 is arranged on the scintillator 24 side.
- the scintillator panel 10 and image pickup device 70 may be joined together or separated from each other.
- an adhesive When joining them, an adhesive may be used, or an optical coupling material (refractive index matching material) may be utilized so as to reduce the loss of the emitted light 32 in view of the refractive indexes of the scintillator 24 and protective film 26 .
- an optical coupling material refractive index matching material
- the radiation image sensor 100 a comprises the scintillator panel 10 and the image pickup device 70 adapted to convert the light 32 emitted from the scintillator 24 of the scintillator panel 10 into the electric signal. Therefore, the radiation image sensor 100 a can prevent the aluminum substrate 12 from corroding, while having a high luminance.
- FIG. 9 is a sectional view schematically showing the scintillator panel in accordance with a second embodiment.
- the scintillator panel 10 a shown in FIG. 9 has the same structure as that of the scintillator panel 10 except that the intermediate film 16 totally seals the aluminum substrate 12 and alumite layer 14 . Therefore, the scintillator panel 10 a not only exhibits the same operations and effects as those of the scintillator 10 , but further improves the moisture resistance of the aluminum substrate 12 , and thus can more reliably prevent the aluminum substrate 12 from corroding.
- FIG. 10 is a sectional view schematically showing the scintillator panel in accordance with a third embodiment.
- the scintillator panel 10 b shown in FIG. 10 has the same structure as that of the scintillator panel 10 except that it lacks the intermediate film 16 . Therefore, the scintillator panel 10 b not only exhibits the same operations and effects as those of the scintillator 10 , but can also simplify the structure.
- FIG. 11 is a cross-sectional SEM photograph of an example of the scintillator panel in accordance with the third embodiment.
- the thickness of the metal film 18 is preferably 50 to 200 nm in view of a uniform reflection characteristic, adhesion strength, and the like of the metal film 18 .
- the thickness of the alumite layer 14 is greater than that of the metal film 18 . In one example, the thickness of the alumite layer 14 is 1000 nm.
- FIG. 12 is a sectional view schematically showing the scintillator panel in accordance with a fourth embodiment.
- the scintillator panel 10 c shown in FIG. 12 has the same structure as that of the scintillator panel 10 except that it lacks the oxide layer 20 . Therefore, the scintillator panel 10 c not only exhibits the same operations and effects as those of the scintillator 10 , but can also simplify the structure.
- FIG. 13 is a sectional view schematically showing the scintillator panel in accordance with a fifth embodiment.
- the scintillator panel 10 d shown in FIG. 13 has the same structure as that of the scintillator panel 10 c except that the intermediate film 16 totally seals the aluminum substrate 12 and alumite layer 14 . Therefore, the scintillator panel 10 d not only exhibits the same operations and effects as those of the scintillator 10 c , but further improves the moisture resistance of the aluminum substrate 12 , and thus can more reliably prevent the aluminum substrate 12 from corroding.
- FIG. 14 is a sectional view schematically showing the scintillator panel in accordance with a sixth embodiment.
- the scintillator panel 10 e shown in FIG. 14 further comprises a radiation-transparent reinforcement plate 28 bonded to the aluminum substrate 12 in addition to the structure of the scintillator panel 10 .
- the aluminum substrate 12 is arranged between the reinforcement plate 28 and scintillator 24 .
- the reinforcement plate 28 is bonded to the aluminum substrate 12 by a double-sided adhesive tape, an adhesive, or the like, for example.
- the reinforcement plate 28 are (1) carbon fiber reinforced plastics (CFRP), (2) carbon boards (made by carbonizing and solidifying charcoal and paper), (3) carbon substrates (graphite substrates), (4) plastic substrates, (5) sandwiches of thinly formed substrates (1) to (4) mentioned above with resin foam, and the like.
- the thickness of the reinforcement plate 28 is greater than the total thickness of the aluminum substrate 12 and alumite layer 14 . This improves the strength of the scintillator panel 10 e as a whole.
- the reinforcement plate 28 is larger than the scintillator 24 when seen in the thickness direction of the aluminum substrate 12 .
- the reinforcement plate 28 hides the scintillator 24 when seen in the thickness direction of the aluminum substrate 12 from the reinforcement plate 28 side. This can prevent a shadow of the reinforcement plate 28 from being projected. In particular, this can prevent an image from becoming uneven because of the shadow of the reinforcement plate 28 when the radiation image 30 having a low energy is used.
- the scintillator panel 10 e not only exhibits the same operations and effects as those of the scintillator panel 10 , but can further improve the flatness and rigidity of the scintillator panel 10 e . Therefore, the scintillator panel 10 e can prevent the scintillator 24 from peeling off as the aluminum substrate 12 bends. Since the radiation image sensor 100 shown in FIG. 7 uses the scintillator panel as a single unit, it is effective to employ the scintillator panel 10 e having a high rigidity.
- the reinforcement plate 28 may be bonded to one of the scintillator panels 10 a , 10 b , 10 c , 10 d instead of the scintillator panel 10 .
- the radiation image sensors 100 , 100 a may employ one of the scintillator panels 10 a , 10 b , 10 c , 10 d , 10 e in place of the scintillator panel 10 .
- the scintillator panel 10 is not required to have both of the intermediate film 16 and oxide layer 20 .
- the scintillator panels 10 , 10 a , 10 b , 10 c , 10 d , 10 e may be free of the protective film 26 .
- a stimulable phosphor (an example of a converting part adapted to convert a radiation image) may be used in place of the scintillator 24 , whereby an imaging plate as the radiation image conversion panel can be made.
- the stimulable phosphor converts the radiation image into a latent image. This latent image is scanned with laser light, so as to read a visible light image.
- the visible light image is detected by a detector (photosensor such as line sensor, image sensor, and photomultiplier).
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Abstract
Description
- 1. Field of the Invention
- The present invention relates to a radiation image conversion panel, a scintillator panel, and a radiation image sensor which are used in medical and industrial x-ray imaging and the like.
- 2. Related Background Art
- While x-ray sensitive films have conventionally been in use for medical and industrial x-ray imaging, radiation imaging systems using radiation detectors have been coming into widespread use from the viewpoint of their convenience and storability of imaging results. In such a radiation imaging system, pixel data formed by two-dimensional radiations are acquired by a radiation detector as an electric signal, which is then processed by a processor, so as to be displayed on a monitor.
- Known as a typical radiation detector is one having a structure bonding a radiation image conversion panel (which will be referred to as “scintillator panel” in the following as the case may be), in which a scintillator for converting a radiation into visible light is formed on a substrate such as aluminum, glass, or fused silica, to an image pickup device. In this radiation detector, a radiation incident thereon from the substrate side is converted into light by the scintillator, and thus obtained light is detected by the image pickup device.
- In the radiation image conversion panels disclosed in Japanese Patent Application Laid-Open Nos. 2006-113007 and HEI 4-118599, a stimulable phosphor is formed on an aluminum substrate having a surface formed with an alumite layer. The radiation image conversion panel having a stimulable phosphor formed on a substrate will be referred to as “imaging plate” in the following as the case may be.
- In the above-mentioned radiation image conversion panel, however, the alumite layer has a low reflectance for the light emitted from a scintillator or a phosphor such as stimulable phosphor, whereby the radiation image conversion panel may fail to attain a sufficiently high luminance. Also, cracks, pinholes, and the like may be formed in the alumite layer by the heat generated when vapor-depositing the scintillator or stimulable phosphor onto the aluminum substrate, for example. As a result, the aluminum substrate and an alkali halide scintillator or stimulable phosphor may react with each other, thereby corroding the aluminum substrate. Though resistant against the corrosion, the alumite layer may corrode by reacting with the scintillator. The corrosion affects resulting images. Even if only a minute point is corroded, the reliability of a captured image utilized for an image analysis will deteriorate. The corrosion may increase as time passes. While the radiation image conversion panel is required to have uniform luminance and resolution characteristics within the substrate surface, the substrate is harder to manufacture as it is larger in size.
- In view of the circumstances mentioned above, it is an object of the present invention to provide a radiation image conversion panel, a scintillator panel, and a radiation image sensor which can prevent aluminum substrates from corroding, while having a high luminance.
- For solving the problem mentioned above, the radiation image conversion panel in accordance with the present invention comprises an aluminum substrate; an alumite layer formed on a surface of the aluminum substrate; a metal film, provided on the alumite layer, having a radiation transparency and a light reflectivity; a protective film covering the metal film and having a radiation transparency and a light transparency; and a converting part provided on the protective film and adapted to convert a radiation image.
- The scintillator panel in accordance with the present invention comprises an aluminum substrate; an alumite layer formed on a surface of the aluminum substrate; a metal film, provided on the alumite layer, having a radiation transparency and a light reflectivity; a protective film covering the metal film and having a radiation transparency and a light transparency; and a scintillator provided on the protective film.
- The radiation image sensor in accordance with the present invention comprises a radiation image conversion panel including an aluminum substrate, an alumite layer formed on a surface of the aluminum substrate, a metal film which is provided on the alumite layer and has a radiation transparency and a light reflectivity, a protective film covering the metal film and having a radiation transparency and a light transparency, and a converting part provided on the protective film and adapted to convert a radiation image; and an image pickup device for converting light emitted from the converting part of the radiation image conversion panel into an electric signal.
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FIG. 1 is a partly broken perspective view schematically showing a scintillator panel in accordance with a first embodiment; -
FIG. 2 is a sectional view taken along the line II-II shown inFIG. 1 ; -
FIG. 3 is a graph showing an example of AES spectrum of the alumite layer in the scintillator panel in accordance with the first embodiment; -
FIG. 4 is a graph showing an example of AES spectrum of the metal film in the scintillator panel in accordance with the first embodiment; -
FIGS. 5A to 5C are process sectional views schematically showing an example of the method of manufacturing a scintillator panel in accordance with the first embodiment; -
FIGS. 6A to 6D are process sectional views schematically showing the example of the method of manufacturing a scintillator panel in accordance with the first embodiment; -
FIG. 7 is a diagram showing an example of radiation image sensor including the scintillator panel in accordance with the first embodiment; -
FIG. 8 is a view showing another example of radiation image sensor including the scintillator panel in accordance with the first embodiment; -
FIG. 9 is a sectional view schematically showing the scintillator panel in accordance with a second embodiment; -
FIG. 10 is a sectional view schematically showing the scintillator panel in accordance with a third embodiment; -
FIG. 11 is a cross-sectional SEM photograph of an example of the scintillator panel in accordance with the third embodiment; -
FIG. 12 is a sectional view schematically showing the scintillator panel in accordance with a fourth embodiment; -
FIG. 13 is a sectional view schematically showing the scintillator panel in accordance with a fifth embodiment; and -
FIG. 14 is a sectional view schematically showing the scintillator panel in accordance with a sixth embodiment. - In the following, preferred embodiments of the present invention will be explained in detail with reference to the accompanying drawings. For easier understanding of the explanation, the same constituents in the drawings will be referred to with the same numerals whenever possible while omitting their overlapping descriptions. The dimensions of the drawings include parts exaggerated for explanations and do not always match dimensional ratios in practice.
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FIG. 1 is a partly broken perspective view showing a scintillator panel (an example of radiation image conversion panel) in accordance with a first embodiment.FIG. 2 is a sectional view taken along the line II-II shown inFIG. 1 . As shown inFIGS. 1 and 2 , thescintillator panel 10 comprises analuminum substrate 12, analumite layer 14 formed on a surface of thealuminum substrate 12, and anintermediate film 16 which is provided on thealumite layer 14 and has a radiation transparency. Thealumite layer 14 andintermediate film 16 are in close contact with each other. Thescintillator panel 10 also includes ametal film 18 which is provided on theintermediate film 16 and has a radiation transparency and a light reflectivity, anoxide layer 20 covering themetal film 18 and having a radiation transparency and a light transparency, aprotective film 22 covering theoxide layer 20 and having a radiation transparency and a light transparency, and a scintillator 24 (an example of a converting part adapted to convert a radiation image) provided on theprotective film 22. Theintermediate film 16,metal film 18,oxide layer 20,protective film 22, andscintillator 24 are in close contact with each other. - In this embodiment, the
aluminum substrate 12,alumite layer 14,intermediate film 16,metal film 18, andoxide layer 20 are totally sealed with theprotective film 22. Theprotective film 22 prevents themetal film 18 from corroding because of pinholes and the like formed in theoxide layer 20. Also, thealuminum substrate 12,alumite layer 14,intermediate film 16,metal film 18,oxide layer 20,protective film 22, andscintillator 24 are totally sealed with aprotective film 26. - When a
radiation 30 such as x-ray is incident on thescintillator 24 from thealuminum substrate 12 side,light 32 such as visible light is emitted from thescintillator 24. Therefore, when a radiation image is incident on thescintillator panel 10, thescintillator 24 converts the radiation image into a light image. Theradiation 30 successively passes through theprotective film 26,protective film 22,aluminum substrate 12,alumite layer 14,intermediate film 16,metal film 18,oxide layer 20, andprotective film 22, thereby reaching thescintillator 24. Thelight 32 emitted from thescintillator 24 is transmitted through theprotective film 26 to the outside, while passing through theprotective film 22, so as to be reflected by themetal film 18 andoxide layer 20 to the outside. Thescintillator panel 10 is used for medical and industrial x-ray imaging and the like. - The
aluminum substrate 12 is a substrate mainly made of aluminum, but may contain impurities and the like. Preferably, the thickness of thealuminum substrate 12 is 0.3 to 1.0 mm. When the thickness of thealuminum substrate 12 is less than 0.3 mm, thescintillator 24 tends to be easy to peel off as thealuminum substrate 12 bends. When the thickness of thealuminum substrate 12 exceeds 1.0 mm, the transmittance of theradiation 30 tends to decrease. - The
alumite layer 14 is formed by anodic oxidation of aluminum, and is made of a porous aluminum oxide. Thealumite layer 14 makes it harder to damage thealuminum substrate 12. If thealuminum substrate 12 is damaged, the reflectance of thealuminum substrate 12 will be less than a desirable value, whereby no uniform reflectance will be obtained within the surface of thealuminum substrate 12. Whether thealuminum substrate 12 is damaged or not can be inspected visually, for example. Thealumite layer 14 may be formed on thealuminum substrate 12 on only one side to be formed with thescintillator 24, on both sides of thealuminum substrate 12, or such as to cover thealuminum substrate 12 as a whole. Forming thealumite layer 14 on both sides of thealuminum substrate 12 can reduce the warpage and flexure of thealuminum substrate 12, and thus can prevent thescintillator 24 from being unevenly vapor-deposited. Forming thealumite layer 14 can also erase streaks occurring when forming thealuminum substrate 12 by rolling. Therefore, even when a reflecting film (metal film 18 and oxide layer 20) is formed on thealuminum substrate 12, a uniform reflectance can be obtained within the surface of thealuminum substrate 12 in the reflecting film. Preferably, the thickness of thealumite layer 14 is 10 to 5000 nm. When the thickness of thealumite layer 14 is less than 10 nm, the damage prevention effect of thealuminum substrate 12 tends to decrease. When the thickness of thealumite layer 14 exceeds 5000 nm, thealumite layer 14 tends to peel off in particular in corner parts of thealuminum substrate 12, thereby causing large cracks in thealumite layer 14 and deteriorating the moisture resistance of thealumite layer 14. In one example, the thickness of thealumite layer 14 is 1000 nm. The thickness of thealumite layer 14 is appropriately determined according to the size and thickness of thealuminum substrate 12. -
FIG. 3 is a graph showing an example of AES spectrum of the alumite layer in the scintillator panel in accordance with the first embodiment. This example conducts an element analysis in the thickness direction of thealumite layer 14 by sputter-etching thealumite layer 14 with argon ions for 31 minutes. In this case, aluminum, oxygen, and argon are detected. Here, argon derives from the argon ions at the time of sputter etching, and thus is not an element contained in thealumite layer 14. Therefore, thealumite layer 14 in this example contains aluminum and oxygen. - Reference will be made to
FIGS. 1 and 2 again. Theintermediate film 16 andprotective films intermediate film 16 andprotective films intermediate film 16 andprotective films intermediate film 16 andprotective films intermediate film 16 andprotective films intermediate film 16 reduces minute irregularities of thealumite layer 14, thereby advantageously acting for forming themetal film 18 having a uniform thickness on thealumite layer 14. - The
metal film 18 is constructed by Al, for example, but may also be made of Ag, Cr, Cu, Ni, Ti, Mg, Rh, Pt, Au, or the like. Among them, Al or Ag is preferred. Themetal film 18 may also contain elements such as oxygen other than metal elements. Themetal film 18 may be constituted by a plurality of metal films, e.g., a Cr film and an Au film provided on the Cr film. Preferably, the thickness of themetal film 18 is 50 to 200 nm. In one example, the thickness of themetal film 18 is 70 nm. When an aluminum film is used as themetal film 18, it may be analyzed by AES (Auger Electron Spectroscopy) as an incomplete aluminum oxide depending on the vapor deposition condition and the processing after the vapor deposition. -
FIG. 4 is a graph showing an example of AES spectrum of the metal film in the scintillator panel in accordance with the first embodiment. This example conducts an element analysis in the thickness direction of themetal layer 18 by sputter-etching themetal film 18 with argon ions for 20 minutes. In this case, aluminum, oxygen, and argon are detected. Here, argon derives from the argon ions at the time of sputter etching, and is not an element contained in themetal film 18. Though containing oxygen, themetal film 18 can clearly be distinguished from thealumite layer 14 in view of their AES spectra forms. - Reference will be made to
FIGS. 1 and 2 again. Theoxide layer 20 is made of a metal oxide, SiO2, TiO2, or the like, for example. Theoxide layer 20 may be constituted by a plurality of oxide layers made of materials different from each other, e.g., an SiO2 film and a TiO2 film. In one example, the thickness of the SiO2 film is 80 nm while the thickness of the TiO2 film is 50 nm. The thickness and number of laminated layers of the SiO2 and TiO2 films are determined in view of the reflectance for the wavelength of light 32 emitted from thescintillator 24. Theoxide layer 20 also functions to prevent themetal film 18 from corroding. - The
scintillator 24 is smaller than thealuminum film 12 when seen in the thickness direction of thealuminum substrate 12. For example, thescintillator 24 is constituted by a phosphor which converts the radiation into visible light, and is made of a columnar crystal or the like of CsI doped with Tl, Na, or the like. Thescintillator 24 has a structure provided with a forest of columnar crystals. Thescintillator 24 may also be made of Tl-doped NaI, Tl-doped KI, or Eu-doped LiI. A stimulable phosphor such as Eu-doped CsBr may be used in place of thescintillator 24. The thickness of thescintillator 24 is preferably 100 to 1000 μm, more preferably 450 to 550 μm. Preferably, the average column diameter of the columnar crystals constituting thescintillator 24 is 3 to 10 μm. - As explained in the foregoing, the
scintillator panel 10 comprises thealuminum substrate 12; thealumite layer 14 formed on the surface of thealuminum substrate 12; themetal film 18, provided on thealumite layer 14, having a radiation transparency and a light reflectivity; theprotective film 22 covering themetal film 18 and having a radiation transparency and a light transparency; and thescintillator 24 provided on theprotective film 22. Therefore, the light 32 emitted from thescintillator 24 is reflected by themetal film 18, whereby thescintillator panel 10 can attain a high luminance. Since themetal film 18 andprotective film 22 are provided between thealumite layer 14 andscintillator 24, thealuminum substrate 12 andscintillator 24 can be kept from reacting with each other even if thealumite layer 14 is formed with cracks, pinholes, and the like. As a consequence, thealuminum substrate 12 can be prevented from corroding. Forming thealumite layer 14 can further erase damages to the surface of thealuminum substrate 12, whereby uniform luminance and resolution characteristics can be obtained within the surface of thescintillator panel 10. - The
scintillator panel 10 further comprises the radiation-transparentintermediate film 16 provided between thealumite layer 14 andmetal film 18. This can flatten the surface of thealumite layer 14, thereby improving the flatness of themetal film 18. Therefore, the in-surface uniformity in reflectance of themetal film 18 improves. It can also enhance the adhesion between thealumite layer 14 andmetal film 18. It can further prevent moisture, scintillator constituent materials, and the like from passing through cracks, pinholes, and the like formed in thealumite layer 14. Therefore, thealuminum substrate 12 is further prevented from corroding. - The
scintillator panel 10 further comprises theoxide layer 20 covering themetal film 18 and having a radiation transparency and a light transparency. This can improve the moisture resistance of themetal film 18 and prevent themetal film 18 from being damaged. It can also enhance the reflectance of themetal film 18. -
FIGS. 5A to 5C and 6A to 6D are process sectional views schematically showing an example of the method of manufacturing a scintillator panel in accordance with the first embodiment. The method of manufacturing thescintillator panel 10 will now be explained with reference toFIGS. 5A to 5C and 6A to 6D. - First, as shown in
FIG. 5A , thealuminum substrate 12 is prepared. Subsequently, as shown inFIG. 5B , thealumite layer 14 is formed by anodic oxidation on a surface of thealuminum substrate 12. For example, thealuminum substrate 12 is electrolyzed by an anode in an electrolyte such as dilute sulfuric acid, so as to be oxidized. This forms thealumite layer 14 constituted by an assembly of hexagonal columnar cells each having a fine hole at the center. Thealumite layer 14 may be dipped in a dye, so as to be colored. This can improve the resolution or enhance the luminance. After being formed, thealumite layer 14 is subjected to a sealing process for filling the fine holes. - Next, as shown in
FIG. 5C , theintermediate film 16 is formed on thealumite layer 14 by using CVD. Further, as shown inFIG. 6A , themetal film 18 is formed on theintermediate film 16 by using vacuum vapor deposition. Themetal film 18 is made of aluminum having a purity of 99.9%, for example. Thereafter, as shown inFIG. 6B , theoxide layer 20 is formed on themetal film 18. Next, as shown inFIG. 6C , theprotective film 22 is formed by using CVD so as to seal thealuminum substrate 12,alumite layer 14,intermediate film 16,metal film 18, andoxide layer 20 as a whole. Further, as shown inFIG. 6D , thescintillator 24 is formed on theprotective film 22 on theoxide layer 20 by using vapor deposition. Subsequently, as shown inFIGS. 1 and 2 , theprotective film 26 is formed by using CVD so as to seal thealuminum substrate 12,alumite layer 14,intermediate film 16,metal film 18,oxide layer 20,protective film 22, andscintillator 24 as a whole. Thus, thescintillator panel 10 is manufactured. The sealing with theprotective films aluminum substrate 12 opposite from the scintillator forming surface from a substrate holder at the time of CVD. An example of such method is one disclosed in U.S. Pat. No. 6,777,690. This method lifts thealuminum substrate 12 by using pins. In this case, no protective film is formed on minute contact surfaces between thealuminum substrate 12 and the pins. -
FIG. 7 is a diagram showing an example of radiation image sensor including the scintillator panel in accordance with the first embodiment. Theradiation image sensor 100 shown inFIG. 7 comprises thescintillator panel 10 and animage pickup device 70 which converts the light 32 emitted from thescintillator 24 of thescintillator panel 10 into an electric signal. The light 32 emitted from thescintillator 24 is reflected by amirror 50, so as to be made incident on alens 60. The light 32 is converged by thelens 60, so as to be made incident on theimage pickup device 70. One or a plurality oflenses 60 may be provided. - The
radiation 30 emitted from aradiation source 40 such as x-ray source is transmitted through an object to be inspected which is not depicted. The transmitted radiation image is made incident on thescintillator 24 of thescintillator panel 10. As a consequence, thescintillator 24 emits a visible light image (the light 32 having a wavelength to which theimage pickup device 70 is sensitive) corresponding to the radiation image. The light 32 emitted from thescintillator 24 is made incident on theimage pickup device 70 by way of themirror 50 andlens 60. For example, CCDs, flat panel image sensors, and the like can be used as theimage pickup device 70. Thereafter, anelectronic device 80 receives the electric signal from theimage pickup device 70, whereby the electric signal is transmitted to aworkstation 90 through alead 36. Theworkstation 90 analyzes the electric signal, and outputs an image onto a display. - The
radiation image sensor 100 comprises thescintillator panel 10 and theimage pickup device 70 adapted to convert the light 32 emitted from thescintillator 24 of thescintillator panel 10 into the electric signal. Therefore, theradiation image sensor 100 can prevent thealuminum substrate 12 from corroding, while having a high luminance. -
FIG. 8 is a view showing another example of radiation image sensor including the scintillator panel in accordance with the first embodiment. Theradiation image sensor 100 a shown inFIG. 8 comprises thescintillator panel 10, and animage pickup device 70 which is arranged so as to oppose thescintillator panel 10 and adapted to convert light emitted from thescintillator 24 into an electric signal. Thescintillator 24 is arranged between thealuminum substrate 12 andimage pickup device 70. The light-receiving surface of theimage pickup device 70 is arranged on thescintillator 24 side. Thescintillator panel 10 andimage pickup device 70 may be joined together or separated from each other. When joining them, an adhesive may be used, or an optical coupling material (refractive index matching material) may be utilized so as to reduce the loss of the emitted light 32 in view of the refractive indexes of thescintillator 24 andprotective film 26. - The
radiation image sensor 100 a comprises thescintillator panel 10 and theimage pickup device 70 adapted to convert the light 32 emitted from thescintillator 24 of thescintillator panel 10 into the electric signal. Therefore, theradiation image sensor 100 a can prevent thealuminum substrate 12 from corroding, while having a high luminance. -
FIG. 9 is a sectional view schematically showing the scintillator panel in accordance with a second embodiment. Thescintillator panel 10 a shown inFIG. 9 has the same structure as that of thescintillator panel 10 except that theintermediate film 16 totally seals thealuminum substrate 12 andalumite layer 14. Therefore, thescintillator panel 10 a not only exhibits the same operations and effects as those of thescintillator 10, but further improves the moisture resistance of thealuminum substrate 12, and thus can more reliably prevent thealuminum substrate 12 from corroding. -
FIG. 10 is a sectional view schematically showing the scintillator panel in accordance with a third embodiment. Thescintillator panel 10 b shown inFIG. 10 has the same structure as that of thescintillator panel 10 except that it lacks theintermediate film 16. Therefore, thescintillator panel 10 b not only exhibits the same operations and effects as those of thescintillator 10, but can also simplify the structure.FIG. 11 is a cross-sectional SEM photograph of an example of the scintillator panel in accordance with the third embodiment. - When forming the
metal film 18 on thealumite layer 14, the thickness of themetal film 18 is preferably 50 to 200 nm in view of a uniform reflection characteristic, adhesion strength, and the like of themetal film 18. Preferably, for keeping the surface state of thealuminum substrate 12 from affecting themetal film 18, the thickness of thealumite layer 14 is greater than that of themetal film 18. In one example, the thickness of thealumite layer 14 is 1000 nm. -
FIG. 12 is a sectional view schematically showing the scintillator panel in accordance with a fourth embodiment. Thescintillator panel 10 c shown inFIG. 12 has the same structure as that of thescintillator panel 10 except that it lacks theoxide layer 20. Therefore, thescintillator panel 10 c not only exhibits the same operations and effects as those of thescintillator 10, but can also simplify the structure. -
FIG. 13 is a sectional view schematically showing the scintillator panel in accordance with a fifth embodiment. Thescintillator panel 10 d shown inFIG. 13 has the same structure as that of thescintillator panel 10 c except that theintermediate film 16 totally seals thealuminum substrate 12 andalumite layer 14. Therefore, thescintillator panel 10 d not only exhibits the same operations and effects as those of thescintillator 10 c, but further improves the moisture resistance of thealuminum substrate 12, and thus can more reliably prevent thealuminum substrate 12 from corroding. -
FIG. 14 is a sectional view schematically showing the scintillator panel in accordance with a sixth embodiment. Thescintillator panel 10 e shown inFIG. 14 further comprises a radiation-transparent reinforcement plate 28 bonded to thealuminum substrate 12 in addition to the structure of thescintillator panel 10. Thealuminum substrate 12 is arranged between thereinforcement plate 28 andscintillator 24. - The
reinforcement plate 28 is bonded to thealuminum substrate 12 by a double-sided adhesive tape, an adhesive, or the like, for example. Employable as thereinforcement plate 28 are (1) carbon fiber reinforced plastics (CFRP), (2) carbon boards (made by carbonizing and solidifying charcoal and paper), (3) carbon substrates (graphite substrates), (4) plastic substrates, (5) sandwiches of thinly formed substrates (1) to (4) mentioned above with resin foam, and the like. Preferably, the thickness of thereinforcement plate 28 is greater than the total thickness of thealuminum substrate 12 andalumite layer 14. This improves the strength of thescintillator panel 10 e as a whole. Preferably, thereinforcement plate 28 is larger than thescintillator 24 when seen in the thickness direction of thealuminum substrate 12. Namely, it will be preferred if thereinforcement plate 28 hides thescintillator 24 when seen in the thickness direction of thealuminum substrate 12 from thereinforcement plate 28 side. This can prevent a shadow of thereinforcement plate 28 from being projected. In particular, this can prevent an image from becoming uneven because of the shadow of thereinforcement plate 28 when theradiation image 30 having a low energy is used. - The
scintillator panel 10 e not only exhibits the same operations and effects as those of thescintillator panel 10, but can further improve the flatness and rigidity of thescintillator panel 10 e. Therefore, thescintillator panel 10 e can prevent thescintillator 24 from peeling off as thealuminum substrate 12 bends. Since theradiation image sensor 100 shown inFIG. 7 uses the scintillator panel as a single unit, it is effective to employ thescintillator panel 10 e having a high rigidity. - The
reinforcement plate 28 may be bonded to one of thescintillator panels scintillator panel 10. - Though preferred embodiments of the present invention are explained in detail in the foregoing, the present invention is not limited to the above-mentioned embodiments and the structures exhibiting various operations and effects mentioned above.
- For example, the
radiation image sensors scintillator panels scintillator panel 10. - The
scintillator panel 10 is not required to have both of theintermediate film 16 andoxide layer 20. Thescintillator panels protective film 26. - Though the above-mentioned embodiments exemplify the radiation image conversion panel by the scintillator panel, a stimulable phosphor (an example of a converting part adapted to convert a radiation image) may be used in place of the
scintillator 24, whereby an imaging plate as the radiation image conversion panel can be made. The stimulable phosphor converts the radiation image into a latent image. This latent image is scanned with laser light, so as to read a visible light image. The visible light image is detected by a detector (photosensor such as line sensor, image sensor, and photomultiplier).
Claims (7)
Priority Applications (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/812,233 US7468514B1 (en) | 2007-06-15 | 2007-06-15 | Radiation image conversion panel, scintillator panel, and radiation image sensor |
JP2007327665A JP4317251B2 (en) | 2007-06-15 | 2007-12-19 | Radiation image conversion panel and radiation image sensor |
CA2633667A CA2633667C (en) | 2007-06-15 | 2008-06-05 | Radiation image conversion panel, scintillator panel, and radiation image sensor |
EP08010626.3A EP2012141B1 (en) | 2007-06-15 | 2008-06-11 | Radiation image converting panel and radiation image sensor |
EP16165336.5A EP3062127B1 (en) | 2007-06-15 | 2008-06-11 | Radiation image converting panel and radiation image sensor |
EA200801337A EA013284B1 (en) | 2007-06-15 | 2008-06-11 | Radiation image conversion panel and radiation image sensor |
EA200901114A EA015114B1 (en) | 2007-06-15 | 2008-06-11 | Radiation image conversion panel and radiation image sensor |
KR1020080055234A KR101042065B1 (en) | 2007-06-15 | 2008-06-12 | Radiation image conversion panel, scintillator panel, and radiation image sensor |
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Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020076568A1 (en) * | 2000-12-20 | 2002-06-20 | Werner Reichert | Cover part for a light source |
US6429430B2 (en) * | 1998-06-18 | 2002-08-06 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor, and methods of making the same |
US6469307B2 (en) * | 1998-06-18 | 2002-10-22 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor, and methods of making the same |
US6692836B2 (en) * | 2000-12-20 | 2004-02-17 | Alanod Aluminium-Veredlung Gmbh & Co. Kg | Composite material |
US6753531B2 (en) * | 1999-04-09 | 2004-06-22 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US6762420B2 (en) * | 1998-06-18 | 2004-07-13 | Hamamatsu Photonics K.K. | Organic film vapor deposition method and a scintillator panel |
US6835936B2 (en) * | 2001-02-07 | 2004-12-28 | Canon Kabushiki Kaisha | Scintillator panel, method of manufacturing scintillator panel, radiation detection device, and radiation detection system |
US6849336B2 (en) * | 1998-06-18 | 2005-02-01 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US20060060792A1 (en) * | 2004-09-22 | 2006-03-23 | Fuji Photo Film Co., Ltd. | Radiographic image conversion panel and method of manufacturing the same |
US7034306B2 (en) * | 1998-06-18 | 2006-04-25 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US7087908B2 (en) * | 2000-09-11 | 2006-08-08 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor and methods of producing them |
US20060263521A1 (en) * | 2003-03-07 | 2006-11-23 | Hiroto Sato | Scintillator panel and method of manufacturing radiation image sensor |
US7141803B2 (en) * | 2000-09-11 | 2006-11-28 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor and methods of producing them |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5689702A (en) | 1979-12-21 | 1981-07-21 | Sumitomo Electric Ind Ltd | Laser beam reflecting mirror |
JPS5889702A (en) | 1981-11-20 | 1983-05-28 | 松下電器産業株式会社 | Conductive paste |
JPS6173901A (en) | 1984-09-19 | 1986-04-16 | Fujitsu Ltd | Production of metallic mirror for infrared detector |
DE3578359D1 (en) | 1984-12-17 | 1990-07-26 | Konishiroku Photo Ind | SCREEN FOR SAVING A RADIATION IMAGE. |
US4873708A (en) | 1987-05-11 | 1989-10-10 | General Electric Company | Digital radiographic imaging system and method therefor |
JP2677818B2 (en) | 1987-08-17 | 1997-11-17 | コニカ株式会社 | Radiation image conversion panel |
JPH04118599A (en) | 1990-09-10 | 1992-04-20 | Fujitsu Ltd | X-ray picture image conversion sheet and apparatus using the same |
US5949848A (en) | 1996-07-19 | 1999-09-07 | Varian Assocaites, Inc. | X-ray imaging apparatus and method using a flat amorphous silicon imaging panel |
JP3126715B2 (en) * | 1999-04-16 | 2001-01-22 | 浜松ホトニクス株式会社 | Scintillator panel and radiation image sensor |
EP1211521B1 (en) * | 1999-04-16 | 2005-12-07 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
CN1264026C (en) * | 2001-01-30 | 2006-07-12 | 浜松光子学株式会社 | Scintillator panel and radiation image sensor |
US6652996B2 (en) | 2002-01-31 | 2003-11-25 | Eastman Kodak Company | Radiographic phosphor panel having improved speed and sharpness |
JP2003262700A (en) * | 2002-03-08 | 2003-09-19 | Konica Corp | Radiation image conversion panel and method for producing it |
JP4118599B2 (en) | 2002-05-20 | 2008-07-16 | 三菱電機株式会社 | Diversity receiver and receiving method |
JP2004294137A (en) * | 2003-03-26 | 2004-10-21 | Konica Minolta Holdings Inc | Radiation image conversion panel and method for manufacturing it |
JP2004325126A (en) * | 2003-04-22 | 2004-11-18 | Canon Inc | Radiation detector |
JP3848288B2 (en) * | 2003-04-25 | 2006-11-22 | キヤノン株式会社 | Radiation imaging equipment |
JP2005029895A (en) | 2003-07-04 | 2005-02-03 | Agfa Gevaert Nv | Vapor deposition apparatus |
JP2005091221A (en) | 2003-09-18 | 2005-04-07 | Fuji Photo Film Co Ltd | Radiological image convertor |
JP2005172511A (en) * | 2003-12-09 | 2005-06-30 | Canon Inc | Radiation detector, its manufacturing method, and radiation imaging systems |
JP2005181220A (en) | 2003-12-22 | 2005-07-07 | Fuji Photo Film Co Ltd | Radiological image conversion panel |
JP4594188B2 (en) * | 2004-08-10 | 2010-12-08 | キヤノン株式会社 | Radiation detection apparatus and radiation detection system |
JP2006119124A (en) | 2004-09-22 | 2006-05-11 | Fuji Photo Film Co Ltd | Radiation image conversion panel and production method therefor |
JP2006113007A (en) | 2004-10-18 | 2006-04-27 | Konica Minolta Medical & Graphic Inc | Radiographic image conversion panel |
JPWO2006049183A1 (en) * | 2004-11-01 | 2008-05-29 | マークテクノロジー株式会社 | Radiation imaging device |
JP2006189377A (en) * | 2005-01-07 | 2006-07-20 | Canon Inc | Scintillator panel, radiation detector, and radiation detection system |
JP2006220439A (en) * | 2005-02-08 | 2006-08-24 | Canon Inc | Scintillator panel, device for detecting radiation, and its manufacturing method |
JP2006267013A (en) * | 2005-03-25 | 2006-10-05 | Fuji Photo Film Co Ltd | Stimulable phosphor panel, and manufacturing method for stimulable phosphor panel |
JP2007040836A (en) * | 2005-08-03 | 2007-02-15 | Fujifilm Corp | Radiation image conversion panel |
RU2298813C1 (en) | 2005-12-26 | 2007-05-10 | Федеральное государственное унитарное предприятие "Научно-исследовательский институт импульсной техники" (ФГУП НИИИТ) | Fiber-optic device for visualization of pulse ionizing radiation flow density distribution |
KR100745991B1 (en) | 2006-08-11 | 2007-08-06 | 삼성전자주식회사 | Image sensor and method for fabricating the same |
-
2007
- 2007-06-15 US US11/812,233 patent/US7468514B1/en active Active
- 2007-12-19 JP JP2007327665A patent/JP4317251B2/en active Active
-
2008
- 2008-06-05 CA CA2633667A patent/CA2633667C/en active Active
- 2008-06-12 KR KR1020080055234A patent/KR101042065B1/en active IP Right Grant
- 2008-06-16 CN CN201210285454.9A patent/CN102819032B/en active Active
- 2008-06-16 CN CN2008101099979A patent/CN101324671B/en active Active
- 2008-11-10 US US12/268,080 patent/US7812315B2/en active Active
-
2011
- 2011-02-07 KR KR1020110010623A patent/KR101294870B1/en active IP Right Grant
-
2012
- 2012-05-23 KR KR1020120054990A patent/KR101294880B1/en active IP Right Grant
Patent Citations (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7034306B2 (en) * | 1998-06-18 | 2006-04-25 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US6429430B2 (en) * | 1998-06-18 | 2002-08-06 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor, and methods of making the same |
US6469307B2 (en) * | 1998-06-18 | 2002-10-22 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor, and methods of making the same |
US6762420B2 (en) * | 1998-06-18 | 2004-07-13 | Hamamatsu Photonics K.K. | Organic film vapor deposition method and a scintillator panel |
US6777690B2 (en) * | 1998-06-18 | 2004-08-17 | Hamamatsu Photonics K.K. | Organic film vapor deposition method and a scintillator panel |
US6849336B2 (en) * | 1998-06-18 | 2005-02-01 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US6753531B2 (en) * | 1999-04-09 | 2004-06-22 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US7141803B2 (en) * | 2000-09-11 | 2006-11-28 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor and methods of producing them |
US7087908B2 (en) * | 2000-09-11 | 2006-08-08 | Hamamatsu Photonics K.K. | Scintillator panel, radiation image sensor and methods of producing them |
US6692836B2 (en) * | 2000-12-20 | 2004-02-17 | Alanod Aluminium-Veredlung Gmbh & Co. Kg | Composite material |
US20020076568A1 (en) * | 2000-12-20 | 2002-06-20 | Werner Reichert | Cover part for a light source |
US6835936B2 (en) * | 2001-02-07 | 2004-12-28 | Canon Kabushiki Kaisha | Scintillator panel, method of manufacturing scintillator panel, radiation detection device, and radiation detection system |
US20060263521A1 (en) * | 2003-03-07 | 2006-11-23 | Hiroto Sato | Scintillator panel and method of manufacturing radiation image sensor |
US20060060792A1 (en) * | 2004-09-22 | 2006-03-23 | Fuji Photo Film Co., Ltd. | Radiographic image conversion panel and method of manufacturing the same |
Cited By (18)
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US20110204233A1 (en) * | 2009-06-30 | 2011-08-25 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Infrared Attenuating or Blocking Layer in Optical Proximity Sensor |
US20110155917A1 (en) * | 2009-12-26 | 2011-06-30 | Canon Kabushiki Kaisha | Scintillator panel, radiation imaging apparatus, methods of manufacturing scintillator panel and radiation imaging apparatus, and radiation imaging system |
GB2477346A (en) * | 2010-02-01 | 2011-08-03 | Applied Scintillation Technologies Ltd | Scintillator assembly for use in digital x-ray imaging |
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US10899672B2 (en) | 2014-09-25 | 2021-01-26 | Koninklijke Philips N.V. | Ceramic material for generating light |
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EP3399527B1 (en) * | 2015-12-28 | 2020-08-26 | S-Nanotech Co-Creation Co., Ltd. | Scintillator and electron detector |
US20180313962A1 (en) * | 2017-03-22 | 2018-11-01 | Fujifilm Corporation | Radiation detector and radiographic imaging apparatus |
US20180313961A1 (en) * | 2017-03-22 | 2018-11-01 | Fujifilm Corporation | Radiation detector and radiographic imaging apparatus |
US10838082B2 (en) * | 2017-03-22 | 2020-11-17 | Fujifilm Corporation | Radiation detector and radiographic imaging apparatus |
US10983224B2 (en) * | 2017-09-27 | 2021-04-20 | Hamamatsu Photonics K.K. | Scintillator panel, and radiation detector |
US11092699B2 (en) * | 2017-09-27 | 2021-08-17 | Hamamatsu Photonics K.K. | Scintillator panel, and radiation detector |
US11480694B2 (en) | 2017-09-27 | 2022-10-25 | Hamamatsu Photonics K.K. | Scintillator panel, and radiation detector |
US11536859B2 (en) | 2017-09-27 | 2022-12-27 | Hamamatsu Photonics K.K. | Scintillator panel, and radiation detector |
US11953631B2 (en) | 2017-09-27 | 2024-04-09 | Hamamatsu Photonics K.K. | Scintillator panel, and radiation detector |
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CA2633667A1 (en) | 2008-12-15 |
KR101294880B1 (en) | 2013-08-08 |
KR20120081045A (en) | 2012-07-18 |
US7468514B1 (en) | 2008-12-23 |
KR101042065B1 (en) | 2011-06-16 |
US7812315B2 (en) | 2010-10-12 |
KR20080110507A (en) | 2008-12-18 |
US20090072160A1 (en) | 2009-03-19 |
JP2008309770A (en) | 2008-12-25 |
CA2633667C (en) | 2012-03-13 |
KR20110031442A (en) | 2011-03-28 |
CN101324671B (en) | 2012-10-03 |
KR101294870B1 (en) | 2013-08-08 |
CN102819032B (en) | 2015-11-25 |
CN101324671A (en) | 2008-12-17 |
JP4317251B2 (en) | 2009-08-19 |
CN102819032A (en) | 2012-12-12 |
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