JP2006189377A - Scintillator panel, radiation detector, and radiation detection system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem wherein yield-down and cost-up caused by an abnormal growth (splash) generated in a phosphor layer occurs, in a conventional direct type radiation detector, and a problem wherein the possibility of destructing a photoelectric transfer element occurred by an abnormal growth generated in a scintillator panel exists in a conventional indirect type radiation detector. <P>SOLUTION: This radiation detector is constituted by bonding a surface in a support substrate side for the scintillator panel having the phosphor layer on a support substrate together with a surface in a side formed with a photoelectric transfer element part in a sensor panel having the photoelectric transfer element part, via an adhesive layer. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a scintillator panel, a radiation detection apparatus, a manufacturing method thereof, and a radiation imaging system used for medical diagnostic equipment, non-destructive inspection equipment, and the like, and more particularly to a scintillator panel, radiation detection equipment, and radiation used for X-ray photography. The present invention relates to an imaging system. In the present specification, description will be made assuming that the category of radiation includes electromagnetic waves such as X-rays and γ-rays.

  In recent years, digital radiation detection devices in which a phosphor layer that emits light by irradiating X-rays on the surface of a photoelectric conversion element formed on at least a large area plane has been commercialized.

  Among these digital radiation detection devices, as disclosed in Patent Document 1, as a highly sensitive and sharp device, a photoelectric conversion element portion in which a plurality of electric elements such as photosensors and TFTs are two-dimensionally arranged A radiation detector (“direct vapor deposition type” or “direct vapor deposition type”) that directly forms a phosphor layer for converting radiation into light that can be detected by a photoelectric conversion element on a photodetector (also referred to as “sensor panel”). Also known as "direct type").

  FIG. 7 is a schematic cross-sectional view of a direct type radiation detection apparatus described in Patent Document 1. In FIG. 7, 101 is a glass substrate, 102 is a photoelectric conversion element portion comprising a photosensor and TFT using amorphous silicon, 103 is a wiring portion, 104 is an electrode extraction portion (electrode pad portion), 105 is silicon nitride or the like. A passivation film is shown, and the sensor panel 106 is constituted by these elements. A phosphor layer (scintillator layer) 107 is formed on the sensor panel 106 so as to correspond to the photoelectric conversion element portion 103. Further, a phosphor protective layer 109 is formed so as to cover the upper surface and side surfaces of the scintillator layer 107 and to be in contact with the surface of the sensor panel 106. Furthermore, a reflective layer 110 is provided on the phosphor protective layer 109 so as to reflect the light emitted from the phosphor layer 107 toward the photoelectric conversion element unit 102, and further, the reflective layer protection for protecting the reflective layer 110. A layer 111 is provided. In addition, a sealing resin 113 is provided on the end surface of the protective member 112 that is in contact with the sensor panel 106 and includes the phosphor protective layer 109, the reflective layer 110, and the reflective layer protective layer 111.

  Further, as disclosed in Patent Document 2 and the like, a plurality of photosensors and electrical elements such as TFTs (Thin Film Transistors) are arranged on a photodetector including a photoelectric conversion element portion that is two-dimensionally arranged. , A radiation detection device (also referred to as “bonding type” or “indirect type”) formed by bonding a scintillator panel in which a phosphor layer for converting radiation into light that can be detected by a photoelectric conversion element is formed on a support substrate It has been known.

FIG. 8 is a schematic cross-sectional view of the indirect type radiation detection apparatus described in Patent Document 2. In FIG. 8, a phosphor layer (scintillator layer) 107 is provided on the surface side of the support substrate 115 on which the reflective layer 110 and the reflective layer protective layer (phosphor base layer) 114 are provided, on which the reflective layer 110 is formed. Further, a phosphor protective layer 109 is provided so as to cover the surface and side surfaces of the phosphor layer 107 and the support substrate 115, thereby forming a scintillator panel 116. The scintillator panel 116 on the side where the phosphor layer 107 is formed and the sensor panel 106 are bonded together via an adhesive (not shown) to form a radiation detection apparatus. As the phosphor protective layer 109, an organic film such as polyparaxylylene resin is preferably used.
JP 2000-284053 A JP 2000-356679 A

  However, in the direct type radiation detection apparatus as described in Patent Document 1, when a defect occurs in the phosphor layer 107 when the phosphor layer 107 is formed on the sensor panel 106, the defect defect portion is fluorescent. Even the body layer 112 alone is disposed as a defective product for each sensor panel 100. In particular, a phosphor layer having a columnar crystal structure composed of alkali halides such as CsI: Na and CsI: Tl formed by vapor deposition has abnormal growth (splash) defects when the phosphor layer is formed. There is a case. For this reason, the yield in the manufacturing process of the radiation detection apparatus is reduced, and the cost of the radiation detection apparatus is increased.

  Further, in the indirect type radiation detection apparatus as described in Patent Document 2, defects in the phosphor layer 107, particularly abnormal growth (splash) defects that may occur in the phosphor layer 107 having a columnar crystal structure. When this occurs, there is a risk that the defective portion may compress or damage the photoelectric conversion element portion 102 or the wiring portion 103, and may further destroy the photoelectric conversion element portion 102.

  Further, in the indirect type radiation detection apparatus, since the scintillator panel 116 and the sensor panel 106 are bonded together through a phosphor protective layer 109 made of an organic film and an adhesive (not shown), the phosphor layer 107. The distance from the photoelectric conversion element portion 102 to the photoelectric conversion element portion 102 may be non-uniform, causing difficulty in the bonding process. Further, when the phosphor layer 107 made of a phosphor having a columnar crystal structure is used as the phosphor layer 107, the columnar crystal structure may be destroyed in the bonding step because the impact resistance of the crystal structure is low. There is a cause of difficulty in the bonding process.

  A radiation detection apparatus according to the present invention includes a sensor panel having a surface on which a photoelectric conversion unit having a plurality of photoelectric conversion elements arranged one-dimensionally or two-dimensionally on a substrate is formed, and a first surface of a support member A scintillator panel having at least a phosphor layer that converts radiation into light that can be sensed by the photoelectric conversion element, wherein the scintillator panel and the sensor panel include the first surface. The second surface of the support member and the surface of the sensor panel facing each other are bonded to each other so as to face each other.

The scintillator panel according to the present invention includes a phosphor layer that is disposed on the first surface of the support member and converts radiation into light that can be sensed by the photoelectric conversion element, and the surface and side surfaces of the phosphor layer. A scintillator panel having a phosphor protective layer covering a part of the first surface;
And a reflective layer disposed in contact with the phosphor protective layer.

  In addition, the radiation detection apparatus and scintillator panel according to the present invention are disposed in contact with the phosphor protective layer, a phosphor protective layer covering at least a surface and a side surface of the phosphor layer, and a part of the first surface. And a reflective layer.

  According to the present invention, since the bonding of the sensor panel and the scintillator panel is performed by the surface of the scintillator panel on the support substrate side, even when an abnormal growth defect occurs in the phosphor layer, the photoelectric conversion element portion of the sensor panel It is possible to configure the radiation detection apparatus without destroying.

  Further, according to the present invention, the sensor panel and the scintillator panel are bonded together by the surface of the scintillator panel on the support substrate side, so that the distance between the sensor panel and the scintillator panel is controlled by the flat support substrate surface. Therefore, it becomes easy to uniformly control the distance between the sensor panel and the scintillator panel in the plane, and it becomes possible to easily manufacture a radiation detection apparatus with good resolution.

  Embodiments of the present invention will be described below in detail with reference to the drawings.

<First Embodiment>
Hereinafter, the first embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3. FIG. 1 is a schematic plan view of a radiation detection apparatus according to the present invention. FIG. 2 is a schematic cross-sectional view of the radiation detection apparatus taken along the line AA ′ of FIG. Moreover, in FIG. 3, sectional drawing which expanded the edge part of the radiation detection apparatus in this invention is shown.

  1 to 3, 1 is an insulating substrate, 2 is a photoelectric conversion element portion, 3 is a wiring portion, 4 is an electrode extraction portion, 5 is a first protective layer, and 6 is a second protective layer. These elements 1 to 6 constitute a sensor panel 7. Further, 8 is a phosphor layer, 9 is a phosphor protective layer, 10 is a reflective layer, 11 is a reflective layer protective layer, and 15 is a support substrate. The phosphor protective member 12 is constituted by these elements 9 to 11, and the scintillator panel 16 is constituted by each element 8, 12 and 15. Further, 13 is a sealing resin, and 14 is an adhesive. Radiation detection is performed by bonding the surface of the sensor panel 7 on the side where the photoelectric conversion element portion 2 is provided and the surface of the scintillator panel 16 on the side where the support substrate 15 is provided via an adhesive 14, for example. The device is configured. Further, a sealing resin 13 is provided so as to seal the adhesion interface between the sensor panel 7 and the scintillator panel 16, the interface between the support substrate 15 and the phosphor protection member 12, and the side surface of the phosphor protection member 12.

  The sensor panel 7 is constituted by the elements 1 to 6. A glass substrate is preferably used as the insulating substrate 1. The photoelectric conversion element unit 2 is a pixel that is provided on the glass substrate 1 and includes a photosensor (photoelectric conversion element) and a switch element. As the photosensor, a PIN photodiode formed of amorphous silicon or the like, an MIS photosensor, or the like is preferably used. As the switch element, a thin film transistor (TFT) formed of amorphous silicon or polysilicon is preferably used. The wiring part 3 is formed on the insulating substrate 1 and electrically connects the drive circuit or readout circuit connected to the electrode extraction part 4 and the photoelectric conversion element part 2. The first protective layer 5 covers and protects the photoelectric conversion element portion 2 and the wiring portion 3, and a material that transmits light emitted from the phosphor layer 8 is preferably used. For example, it is formed of an inorganic material such as silicon nitride or silicon oxide. The second protective layer 6 is used to cover the first protective layer 5 and flatten the surface shape on the first protective layer 5 affected by the photoelectric conversion element portion 2 and the wiring portion 3. For example, transparent organic resins such as polyimide, acrylic, modified acrylic resin, polysulfone, polyarylate, polycarbonate, polybutylene terephthalate, and polyethylene terephthalate are preferably used.

Next, the scintillator panel 16 forms the phosphor layer 8 on the support substrate 15, further covers the surface and side surfaces of the phosphor layer 8, and the first surface on which the phosphor layer 8 of the support substrate 15 is formed. It is obtained by forming the phosphor protective layer 9 so as to be in contact with. Further, it is desirable to provide a reflective layer 10 on the phosphor protective layer 9 and a reflective layer protective layer 11 covering the reflective layer 10. The phosphor layer 8 is preferably made of a material that emits light by radiation such as emitted X-rays, and is represented by a scintillator composed of a particulate crystal typified by Gd ₂ O ₂ S: Tb and a binder resin, or CsI: Tl. A scintillator having a columnar crystal structure is preferably used. Particularly, a scintillator made of an alkali halide: activator having a columnar crystal structure that emits light in a wavelength region that is favorably absorbed by a photosensor made of amorphous silicon is preferably used. In addition to CsI: Tl, CsI: Na, NaI: Tl, LiI: Eu, KI: Tl, etc. are preferably used. The phosphor protective layer 9 is provided for the purpose of moisture-proof protection of the phosphor layer 8, and any material can be used as long as it meets the purpose. A resin material that has high transmittance in the emission wavelength region and can be easily formed into a thin layer is desirable. For example, it is desirable to use an organic film such as polyparaxylylene that can be formed by a CVD method, a hot-melt resin sheet that is formed into a sheet, or an adhesive sheet. In particular, it is defined as an adhesive resin made of 100% non-volatile thermoplastic material that does not contain water or solvent, is solid at room temperature, melts when the resin temperature rises, solidifies when the resin temperature falls, and melts by heating In the state, hot-melt resin that has adhesiveness to other organic and inorganic materials, becomes solid at room temperature and does not have adhesiveness, and does not contain polar solvent, solvent, and water is heated and melted and cooled. Thus, it is desirable that the phosphor protective layer can be easily formed by solidification. Furthermore, a reflection layer 10 for reflecting light emitted from the phosphor layer 8 to the sensor panel 7 is formed on the phosphor protection layer 9. The reflection layer 10 is preferably made of a material that reflects light from the phosphor layer 8 and prevents moisture from entering from the outside, and particularly a metal material. Specifically, metals having high reflectivity such as Al, Ag, Cr, Cu, Ni, Ti, Mg, Rh, Pt, and Au are desirable. Further, it is desirable that a reflective layer protective layer 11 made of a resin (not shown) is laminated on the reflective layer 10 for the purpose of protecting the rigidity. The material used for the phosphor protective layer 9 is preferably used for the reflective layer protective layer 11. The phosphor protective layer 9 or the reflective layer protective layer 11 may be formed so as to cover the support substrate 15. In this case, the thickness of the support substrate 15 and the adhesive 14 and the phosphor protective layer 9 or The total film thickness with the reflective layer protective layer 11 must be considered so as not to adversely affect the resolution.

  Here, the support substrate 15 will be described. The support substrate 15 must efficiently transmit the light emitted by the phosphor layer 8 to the photoelectric conversion element unit 2. Therefore, first, the support substrate 15 is required to have a characteristic of transmitting 80% or more of the light emitted by the phosphor layer 8. Further, since the light generated by the phosphor layer 8 reaches the photoelectric conversion element portion 2, it passes through the support substrate 15 and the adhesive 14, so that the total thickness thereof is equal to or smaller than one pixel size of the photoelectric conversion element portion 2. It is necessary to. Here, since the adhesive 14 needs to have a thickness of 5 μm to 50 μm in order to function as an adhesive, the adhesive 14 is an adhesive from the thickness of one pixel of the photoelectric conversion element portion 2 described above. The thickness obtained by subtracting the thickness for functioning as the support substrate 15 is used as the thickness of the support substrate 15. Here, generally, the size of one pixel of the photoelectric conversion element portion 2 is 10 to 200 μm. Furthermore, the support substrate is required to have mechanical strength that is not damaged in the step of forming the phosphor layer 8 and the step of bonding the scintillator panel 16 and the sensor panel 7 together. In order to obtain such mechanical strength, the thickness of the support substrate 15 is required to be at least 20 μm or more. Therefore, the thickness of the support substrate 15 is preferably 20 μm to 195 μm. Further, when the phosphor layer 8 made of an alkali halide: activator is used, the heat required for vacuum deposition during the formation of the phosphor layer 8 and the activity for improving the light emission amount of the phosphor layer 8. Since the heat required for the heat treatment step during the formation is at least 100 ° C. for the support substrate 15, heat given during the heat treatment and heat resistance of 100 to 120 ° C. are required. Examples of the material of the support substrate 15 that satisfies the required thickness and further satisfies the required heat resistance include polyimide, polysulfone, polyethersulfone, polyarylate (fully aromatic polyester), polycarbonate, and polyamideimide. , Polyetherimide, and modified acrylic resins are preferably used.

  Radiation detection is performed by bonding the surface of the sensor panel 7 on the side where the photoelectric conversion element portion 2 is provided and the surface of the scintillator panel 16 on the side where the support substrate 15 is provided via an adhesive 14, for example. The device is configured. The adhesive 14 includes a second surface of the support substrate 15 of the scintillator panel 16 that faces the first surface of the phosphor layer 8 and a surface of the sensor panel 7 on the side where the photoelectric conversion element portion 2 is provided. An acrylic resin adhesive, a silicon resin adhesive, a hot melt resin, or the like is preferably used. Further, a sealing resin 13 is provided so as to seal the adhesion interface between the sensor panel 7 and the scintillator panel 16, the interface between the support substrate 15 and the phosphor protection member 12, and the side surface of the phosphor protection member 12.

  FIG. 3 shows an enlarged cross-sectional view of the end of the radiation detection apparatus according to the present invention. Here, since the phosphor layer 8 generally has a film thickness characteristic that the thickness is reduced at the end portion, the phosphor layer 8 is a substantially equivalent film on the effective pixel region where the photoelectric conversion element portions 2 are assembled. It is necessary to provide a larger area than the effective pixel region so as to have a thickness. Therefore, the support substrate 15 is larger than the effective pixel area. Further, the support substrate 15 must be provided so as not to overlap the electrode extraction portion 4.

  In FIG. 4, the schematic sectional drawing explaining the bonding process of the scintillator panel 16 and the sensor panel 7 in this invention is shown. The bonding process in the present invention will be described with reference to FIG.

  First, the adhesive 14 is prepared on the surface of the second protective layer 6 of the sensor panel 7. Next, the scintillator panel 16 is held so as not to bend, and the second surface side facing the first surface of the support substrate 15 on which the phosphor layer 8 of the scintillator panel 7 is formed is placed on the photoelectric conversion element of the sensor panel 7. Positioning is performed so as to face the surface on the side where the portion 2 is formed, and it is overlaid on the adhesive 14 on the sensor panel 7. Next, in a state where the scintillator panel 16 and the sensor panel 7 are overlapped with the adhesive 14, the scintillator panel 16 and the sensor panel 7 are set on the heating stage 23 of the vacuum press apparatus 20, and the inside of the vacuum press apparatus 20 is evacuated to about 700 mmHg. And air bubbles existing between the scintillator panel 16 are removed. Next, pressure is applied by a press member 21 made of diaphragm rubber, and the heating stage 23 is heated to a predetermined temperature and held. Thereafter, the heating is stopped and the adhesive 14 is cooled to a temperature at which it is cured. After the adhesive 14 is cured, the adhesive 14 is taken out from the vacuum press apparatus 20. The radiation detection apparatus in which the sensor panel 7 and the scintillator panel 16 are bonded via the adhesive 14 is obtained by the above process.

  In the present embodiment, the bonding process using the vacuum press device 20 has been described. However, the present invention is not limited to this, and for example, bonding may be performed by applying pressure from above the scintillator panel 16 using a roll laminate.

<Second Embodiment>
The second embodiment of the present invention will be described in detail with reference to FIG. FIG. 5 is a schematic cross-sectional view of the radiation detection apparatus according to the second embodiment. The present embodiment is different from the first embodiment in that a phosphor base layer 17 is provided between the support substrate 15 and the phosphor layer 8. Since other components and the forming method are the same as those in the first embodiment, a detailed description is omitted.

The phosphor underlayer 17 is suitably provided when the phosphor layer 8 has a columnar crystal structure made of an alkali halide: an inactive agent. For example, when CsI: Tl is used as the phosphor layer 8, if the deposition start surface does not have sufficient flatness, it may cause abnormal growth (splash) defects. Further, since CsI: Tl has deliquescence due to moisture, it is necessary to prevent moisture from entering from the outside of the scintillator panel 16. Furthermore, if the adhesion between the surface of CsI: Tl and the support substrate 15 is poor, the phosphor layer 8 may be peeled off from the support substrate 15. In order to solve the above problem, it is preferable to provide the phosphor base layer 17 between the support substrate 15 and the phosphor layer 8. The thickness of the phosphor underlayer 17 is preferably 0.1 μm to 20 μm. The phosphor underlayer 17 is made of an organic film such as polyparaxylylene, polydichloroparaxylylene, polytetrachloropolyparaxylylene, or an organic film formed by a plasma polymerization method using ethylene or styrene as a monomer. It is preferable to use an organic film having high light permeability and low moisture permeability, such as a film. In addition, it is possible to use an inorganic film having high light transmittance and low moisture permeability, such as SiO ₂ , SiN, TiO ₂ , and MgF ₂ .

<Example 1>
Examples of the radiation detection apparatus shown in the first embodiment based on FIGS. 1 to 4 will be specifically described below.

  In a region of 430 mm × 430 mm on the surface of a glass substrate 1 having a thickness of 0.7 mm, a plurality of photoelectric conversion element portions 2 each having a pixel size of 160 μm × 160 μm constituted by PIN photodiodes and TFTs made of amorphous silicon are two-dimensionally formed. In addition, a wiring portion 3 made of Al such as a bias wiring for applying a bias to the PIN photodiode, a driving wiring for applying a driving signal to the TFT, and a signal wiring for outputting a signal charge transferred by the TFT is formed. Is done. Next, the first protective layer 5 made of silicon nitride is formed so as to cover the photoelectric conversion element portion 2 and the wiring portion 3. Further, a second protective layer 6 made of polyimide is formed on the first protective layer 5, and the first and second protective layers on the region to be the electrode extraction portion 4 are removed to provide the electrode extraction portion 4. The sensor panel 7 was formed by the above process.

  Next, a support substrate 15 made of polyetherimide having a thickness of 25 μm is prepared on quartz glass as a holding substrate via an adhesive that is decomposed by ultraviolet rays, and cesium iodide (CsI) is formed on the first surface of the support substrate 15. CsI: Tl having thallium (Tl) added thereto and having a columnar crystal structure was formed to a thickness of 550 μm by a vacuum deposition method in a film formation time of 4 hours. The addition concentration of Tl was 0.1 to 0.3 mol%. The average column diameter of the CsI: Tl columnar crystal on the top side (deposition surface side) was about 5 μm. The formed CsI: Tl was heat-treated in a clean oven under a nitrogen atmosphere at 200 ° C. for 2 hours to obtain a phosphor layer 8. Next, a phosphor protective layer 9 made of polyparaxylylene resin is formed to have a thickness of 50 μm by thermal CVD so as to cover the surface and side surfaces of the phosphor layer 8 and come into contact with the first surface of the support substrate 15. To do. Further, a reflective layer 10 made of Al: 40 μm is provided on the phosphor protective layer 9, and a polyparaxylene resin formed by a CVD method: a reflective layer protective layer 11 made of 50 μm is formed, and a phosphor protective member 12 was obtained. Then, the support substrate 15 was peeled off by irradiating ultraviolet rays from quartz glass as a holding substrate to decompose the adhesive. The scintillator panel 16 was formed by the above process.

Next, an adhesive 14 made of a hot-melt resin (melting start temperature 77 ° C.) having a thickness of 20 μm is prepared on the second protective layer 6 of the sensor panel 7. Next, the scintillator panel 16 is held so as not to bend, and the second surface side facing the first surface of the support substrate 15 on which the phosphor layer 8 of the scintillator panel 16 is formed is placed on the photoelectric conversion element of the sensor panel 7. Positioning is performed so as to face the surface on the side where the portion 2 is formed, and it is overlaid on the adhesive 14 on the sensor panel 7. Next, in a state where the scintillator panel 16 and the sensor panel 7 are overlapped with the adhesive 14, the scintillator panel 16 and the sensor panel 7 are set on the heating stage 23 of the vacuum press apparatus 20, and the inside of the vacuum press apparatus 20 is evacuated to about 700 mmHg. And air bubbles existing between the scintillator panel 16 are removed. Next, the pressing member 21 made of diaphragm rubber is pressurized at a pressing pressure of 5 kg / cm ² , and the heating stage 23 is further heated to 120 ° C. and held. Thereafter, heating is stopped and the temperature is lowered to 40 ° C. After the adhesive 14 is cured, the adhesive 14 is taken out from the vacuum press device 20. Furthermore, the terminal part of the flexible circuit board (not shown) was thermocompression-bonded to the electrode extraction part 4 on the sensor panel 7 via an anisotropic conductive adhesive (not shown). The radiation detection apparatus in which the sensor panel 7 and the scintillator panel 16 were bonded together with the adhesive 14 was obtained by the above process.

  The radiation detector produced as described above was stored in a 60 ° C., 90% temperature, humidity test tank for 1000 hours. As a result, the appearance defect such as the displacement of the phosphor layer 7 and peeling between the layers did not occur. Further, the phosphor layer 7 was not corroded due to water or a solvent, and the emission intensity was not deteriorated due to deliquescence, and a highly reliable radiation detection apparatus was obtained.

<Example 2>
An example of the radiation detection apparatus shown in the second embodiment based on FIGS. 4 and 5 will be specifically described below. In the present embodiment, the difference from the first embodiment is that a phosphor base layer 17 is provided between the support substrate 15 and the phosphor layer 8.

  In a region of 430 mm × 430 mm on the surface of a glass substrate 1 having a thickness of 0.7 mm, a plurality of photoelectric conversion element portions 2 each having a pixel size of 160 μm × 160 μm constituted by MIS type photosensors and TFTs made of amorphous silicon are two-dimensionally formed. In addition, a wiring portion 3 made of Al such as a bias wiring for applying a bias to the MIS type photosensor, a driving wiring for applying a driving signal to the TFT, and a signal wiring for outputting a signal charge transferred by the TFT is formed. Is done. Next, the first protective layer 5 made of silicon nitride is formed so as to cover the photoelectric conversion element portion 2 and the wiring portion 3. Further, a second protective layer 6 made of polyimide is formed on the first protective layer 5, and the first and second protective layers on the region to be the electrode extraction portion 4 are removed to provide the electrode extraction portion 4. The sensor panel 7 was formed by the above process.

  Next, a support substrate 15 made of polyimide having a thickness of 25 μm is prepared on quartz glass as a holding substrate via an adhesive that is decomposed by ultraviolet rays, and an organic material made of polyparaxylylene is formed on the first surface of the support substrate 15. A phosphor underlayer 17 made of a film is formed to a thickness of 10 μm. Next, CsI: Tl having a columnar crystal structure in which thallium (Tl) is added to cesium iodide (CsI) is deposited on the formed phosphor underlayer 17 by a vacuum deposition method in a film formation time of 4 hours. 550 μm was formed. The addition concentration of Tl was 0.1 to 0.3 mol%. The average column diameter of the CsI: Tl columnar crystal on the top side (deposition surface side) was about 5 μm. The formed CsI: Tl was heat-treated in a clean oven under a nitrogen atmosphere at 200 ° C. for 2 hours to obtain a phosphor layer 8. Next, the phosphor protective layer 9 made of polyparaxylylene resin is formed to have a thickness of 50 μm by thermal CVD so as to cover the surface and side surfaces of the phosphor layer 8 and to be in contact with the phosphor base layer 17. Further, a reflective layer 10 made of Al: 40 μm is provided on the phosphor protective layer 9, and a polyparaxylene resin formed by a CVD method: a reflective layer protective layer 11 made of 50 μm is formed, and a phosphor protective member 12 was obtained. Then, the support substrate 15 was peeled off by irradiating ultraviolet rays from quartz glass as a holding substrate to decompose the adhesive. The scintillator panel 16 was formed by the above process.

Next, an adhesive 14 made of a hot-melt resin having a thickness of 20 μm is prepared on the second protective layer 6 of the sensor panel 7. Next, the scintillator panel 16 is held so as not to bend, and the second surface side facing the first surface of the support substrate 15 on which the phosphor layer 8 of the scintillator panel 7 is formed is placed on the photoelectric conversion element of the sensor panel 7. Positioning is performed so as to face the surface on the side where the portion 2 is formed, and it is overlaid on the adhesive 14 on the sensor panel 7. Next, in a state where the scintillator panel 16 and the sensor panel 7 are overlapped with the adhesive 14, the scintillator panel 16 and the sensor panel 7 are set on the heating stage 23 of the vacuum press apparatus 20, and the inside of the vacuum press apparatus 20 is exhausted to about 700 mmHg. And air bubbles existing between the scintillator panel 16 are removed. Next, the pressing member 21 made of diaphragm rubber is pressurized at a pressing pressure of 5 kg / cm ² , and the heating stage 23 is further heated to 120 ° C. and held. Thereafter, heating is stopped and the temperature is lowered to 40 ° C. After the adhesive 14 is cured, the adhesive 14 is taken out from the vacuum press device 20. Furthermore, the terminal part of the flexible circuit board (not shown) was thermocompression-bonded to the electrode extraction part 4 on the sensor panel 7 via an anisotropic conductive adhesive (not shown). The radiation detection apparatus in which the sensor panel 7 and the scintillator panel 16 were bonded together with the adhesive 14 was obtained by the above process.

  The radiation detector produced as described above was stored in a 60 ° C., 90% temperature, humidity test tank for 1000 hours. As a result, the appearance defect such as the displacement of the phosphor layer 7 and peeling between the layers did not occur. Further, the phosphor layer 7 was not corroded due to water or a solvent, and the emission intensity was not deteriorated due to deliquescence, and a highly reliable radiation detection apparatus was obtained.

<Application example>
FIG. 6 shows an application example to an X-ray diagnosis system using the radiation detection apparatus according to the present invention.

  The X-ray 6060 generated by the X-ray tube 6050 passes through the chest 6062 of the patient or subject 6061 and enters the radiation detection device 6040 on which a scintillator (phosphor) is mounted. This incident X-ray includes information inside the body of the patient 6061. The scintillator emits light in response to the incidence of X-rays, and this is photoelectrically converted to obtain electrical information. This information can be digitally converted and image-processed by an image processor 6070 as a signal processing means, and can be observed on a display 6080 as a display means in a control room.

  Further, this information can be transferred to a remote place by transmission processing means such as a telephone line 6090, and can be displayed on a display 6081 serving as a display means such as a doctor room in another place or stored in a recording means such as an optical disk. It is also possible for a doctor to make a diagnosis. Moreover, it can also record on the film 6110 used as a recording medium by the film processor 6100 used as a recording means.

  The present invention is used for a radiation detection apparatus and a scintillator panel used for medical diagnostic equipment, non-destructive testing equipment, and the like.

1 is a schematic plan view showing an overall configuration of a radiation detection apparatus according to a first embodiment of the present invention. 1 is a schematic cross-sectional view showing an overall configuration of a radiation detection apparatus according to a first embodiment of the present invention. It is an expanded sectional view in the peripheral region of the radiation detection device concerning a 1st embodiment of the present invention. It is typical sectional drawing which shows the bonding process of this invention. It is typical sectional drawing which shows the whole structure of the radiation detection apparatus which concerns on the 2nd Embodiment of this invention. It is a figure explaining the radiation detection system using the radiation detection apparatus which concerns on this invention. It is typical sectional drawing which shows the conventional radiation detection apparatus. It is typical sectional drawing which shows the conventional radiation detection apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101 Board | substrate 2,102 Photoelectric conversion element part 3,103 Wiring part 4,104 Electrode extraction part 5,105 1st protective layer (passivation film)
6 Second protective film (flattening film)
7, 106 Sensor panel 8, 107 Phosphor layer 9, 109 Phosphor protective layer 10, 110 Reflective layer 11, 111 Reflective layer protective layer 12, 112 Phosphor protective member 13, 113 Sealing resin 14, Adhesive 15, 115 Support substrate 16, 116 Scintillator panel 17, 114 Phosphor underlayer 20 Vacuum press device 21 Press member 22 Heater 23 Heating stage

Claims (10)

A sensor panel having a surface on which a photoelectric conversion unit having a plurality of photoelectric conversion elements arranged one-dimensionally or two-dimensionally on a substrate is formed;
A scintillator panel having at least a phosphor layer disposed on the first surface of the support member for converting radiation into light that can be sensed by the photoelectric conversion element;
In a radiation detection apparatus including:
The scintillator panel and the sensor panel are configured such that a second surface of the support member facing the first surface and the surface of the sensor panel are bonded to face each other. .   The scintillator panel further includes a phosphor protective layer covering at least a surface and a side surface of the phosphor layer and a part of the first surface, and a reflective layer disposed in contact with the phosphor protective layer. The radiation detection apparatus according to claim 1.   The radiation detection apparatus according to claim 1, wherein the support member has a thickness of 20 μm to 195 μm.   The support member is made of a material containing a substance in the group consisting of polyimide, polysulfone, polyethersulfone, polyarylate, polycarbonate, polyamideimide, polyetherimide, and modified acrylic resin. The radiation detection apparatus according to any one of the above.   The radiation detection apparatus according to claim 1, wherein the phosphor layer has a columnar crystal structure. The radiation detection apparatus according to any one of claims 1 to 5,
Signal processing means for processing signals from the radiation detection device;
Recording means for recording a signal from the signal processing means;
Display means for displaying a signal from the signal processing means;
Transmission processing means for transmitting a signal from the signal processing means;
A radiation detection system comprising: a radiation source for generating the radiation. A phosphor layer disposed on the first surface of the support member that converts radiation into light that can be sensed by the photoelectric conversion element, and covers the surface and side surfaces of the phosphor layer and a part of the first surface. A scintillator panel having a phosphor protective layer,
A scintillator panel, comprising: a reflective layer disposed on and in contact with the phosphor protective layer.   The scintillator panel according to claim 7, wherein the support member has a thickness of 20 μm to 195 μm.   The said support member consists of a material containing the substance in the group which consists of a polyimide, a polysulfone, a polyether sulfone, a polyarylate, a polycarbonate, a polyamideimide, a polyetherimide, and a modified acrylic resin. The scintillator panel described in 1.   The scintillator panel according to any one of claims 7 to 9, wherein the phosphor layer has a columnar crystal structure.

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