JP4308904B2 - 表面取り付け及びフリップチップ技術 - Google Patents
表面取り付け及びフリップチップ技術 Download PDFInfo
- Publication number
- JP4308904B2 JP4308904B2 JP52901495A JP52901495A JP4308904B2 JP 4308904 B2 JP4308904 B2 JP 4308904B2 JP 52901495 A JP52901495 A JP 52901495A JP 52901495 A JP52901495 A JP 52901495A JP 4308904 B2 JP4308904 B2 JP 4308904B2
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- JP
- Japan
- Prior art keywords
- substrate
- conductive
- layer
- back side
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
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- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US321,937 | 1989-03-10 | ||
US23855294A | 1994-05-05 | 1994-05-05 | |
US238,552 | 1994-05-05 | ||
US32193794A | 1994-10-12 | 1994-10-12 | |
PCT/US1995/005217 WO1995031006A1 (en) | 1994-05-05 | 1995-05-04 | Surface mount and flip chip technology |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09500240A JPH09500240A (ja) | 1997-01-07 |
JP4308904B2 true JP4308904B2 (ja) | 2009-08-05 |
Family
ID=26931764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52901495A Expired - Lifetime JP4308904B2 (ja) | 1994-05-05 | 1995-05-04 | 表面取り付け及びフリップチップ技術 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0707741A4 (de) |
JP (1) | JP4308904B2 (de) |
KR (1) | KR100232410B1 (de) |
AU (1) | AU2462595A (de) |
DE (1) | DE707741T1 (de) |
WO (1) | WO1995031006A1 (de) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9199357B2 (en) | 1997-04-04 | 2015-12-01 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9221154B2 (en) | 1997-04-04 | 2015-12-29 | Chien-Min Sung | Diamond tools and methods for making the same |
US9409280B2 (en) | 1997-04-04 | 2016-08-09 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9868100B2 (en) | 1997-04-04 | 2018-01-16 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9463552B2 (en) | 1997-04-04 | 2016-10-11 | Chien-Min Sung | Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods |
US9238207B2 (en) | 1997-04-04 | 2016-01-19 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
DE19718618C2 (de) | 1997-05-02 | 1999-12-02 | Daimler Chrysler Ag | Komposit-Struktur mit einem mehrere mikroelektronische Bauteile und eine Diamantschicht aufweisenden Wachstums-Substrat sowie Verfahren zur Herstellung der Komposit-Struktur |
FR2793953B1 (fr) | 1999-05-21 | 2002-08-09 | Thomson Csf | Capacite thermique pour composant electronique fonctionnant en impulsions longues |
JP4761644B2 (ja) * | 2001-04-18 | 2011-08-31 | 三菱電機株式会社 | 半導体装置 |
AU2002309459A1 (en) * | 2001-06-13 | 2002-12-23 | Advanpack Solutions Pte Ltd | Method for forming a wafer level chip scale package, and package formed thereby |
EP2560199B1 (de) | 2002-04-05 | 2016-08-03 | STMicroelectronics S.r.l. | Verfahren zum Herstellen einer durchisolierten Verbindung in einem Körper aus einem Halbleitermaterial |
JP2004104074A (ja) * | 2002-07-17 | 2004-04-02 | Sumitomo Electric Ind Ltd | 半導体装置用部材 |
CA2543909C (en) * | 2003-11-18 | 2012-01-31 | Halliburton Energy Services, Inc. | High temperature electronic devices |
FR2874127B1 (fr) * | 2004-08-03 | 2006-12-08 | United Monolithic Semiconduct | Boitier miniature hyperfrequence pour montage en surface et procede de fabrication du boitier |
US8393934B2 (en) | 2006-11-16 | 2013-03-12 | Chien-Min Sung | CMP pad dressers with hybridized abrasive surface and related methods |
US9724802B2 (en) | 2005-05-16 | 2017-08-08 | Chien-Min Sung | CMP pad dressers having leveled tips and associated methods |
US8678878B2 (en) | 2009-09-29 | 2014-03-25 | Chien-Min Sung | System for evaluating and/or improving performance of a CMP pad dresser |
US9138862B2 (en) | 2011-05-23 | 2015-09-22 | Chien-Min Sung | CMP pad dresser having leveled tips and associated methods |
SE1050461A1 (sv) | 2006-02-01 | 2010-05-10 | Silex Microsystems Ab | Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar |
FR2923080A1 (fr) * | 2007-10-26 | 2009-05-01 | St Microelectronics Rousset | Procede de fabrication d'un via dans une plaquette de semi-conducteur |
FR2955202B1 (fr) * | 2009-12-10 | 2012-08-03 | St Microelectronics Crolles 2 | Dispositif microelectronique integre avec liaisons traversantes. |
TWI487019B (en) | 2011-05-23 | 2015-06-01 | Cmp pad dresser having leveled tips and associated methods | |
JP7232137B2 (ja) * | 2019-06-25 | 2023-03-02 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
DE102019122888B4 (de) * | 2019-08-27 | 2024-09-26 | Infineon Technologies Ag | Leistungshalbleitervorrichtung und Verfahren |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62154651A (ja) * | 1985-12-26 | 1987-07-09 | Nippon Soken Inc | 集積回路基板 |
JPS62194652A (ja) * | 1986-02-21 | 1987-08-27 | Hitachi Ltd | 半導体装置 |
US4972250A (en) * | 1987-03-02 | 1990-11-20 | Microwave Technology, Inc. | Protective coating useful as passivation layer for semiconductor devices |
JPH01120853A (ja) * | 1987-11-04 | 1989-05-12 | Mitsubishi Electric Corp | 半導体装置 |
US5131963A (en) * | 1987-11-16 | 1992-07-21 | Crystallume | Silicon on insulator semiconductor composition containing thin synthetic diamone films |
US5091331A (en) * | 1990-04-16 | 1992-02-25 | Harris Corporation | Ultra-thin circuit fabrication by controlled wafer debonding |
JP3047986B2 (ja) * | 1990-07-25 | 2000-06-05 | 株式会社日立製作所 | 半導体装置 |
US5170930A (en) * | 1991-11-14 | 1992-12-15 | Microelectronics And Computer Technology Corporation | Liquid metal paste for thermal and electrical connections |
US5426072A (en) * | 1993-01-21 | 1995-06-20 | Hughes Aircraft Company | Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate |
US5272104A (en) * | 1993-03-11 | 1993-12-21 | Harris Corporation | Bonded wafer process incorporating diamond insulator |
EP0637078A1 (de) * | 1993-07-29 | 1995-02-01 | Motorola, Inc. | Eine Halbleiteranordnung mit verbesserter Wärmezerstreuung |
-
1995
- 1995-05-04 DE DE0707741T patent/DE707741T1/de active Pending
- 1995-05-04 JP JP52901495A patent/JP4308904B2/ja not_active Expired - Lifetime
- 1995-05-04 WO PCT/US1995/005217 patent/WO1995031006A1/en not_active Application Discontinuation
- 1995-05-04 EP EP95918863A patent/EP0707741A4/de not_active Withdrawn
- 1995-05-04 KR KR1019960700077A patent/KR100232410B1/ko not_active IP Right Cessation
- 1995-05-04 AU AU24625/95A patent/AU2462595A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JPH09500240A (ja) | 1997-01-07 |
KR100232410B1 (ko) | 1999-12-01 |
AU2462595A (en) | 1995-11-29 |
DE707741T1 (de) | 1996-11-28 |
EP0707741A1 (de) | 1996-04-24 |
EP0707741A4 (de) | 1997-07-02 |
WO1995031006A1 (en) | 1995-11-16 |
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