JP4308904B2 - 表面取り付け及びフリップチップ技術 - Google Patents

表面取り付け及びフリップチップ技術 Download PDF

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Publication number
JP4308904B2
JP4308904B2 JP52901495A JP52901495A JP4308904B2 JP 4308904 B2 JP4308904 B2 JP 4308904B2 JP 52901495 A JP52901495 A JP 52901495A JP 52901495 A JP52901495 A JP 52901495A JP 4308904 B2 JP4308904 B2 JP 4308904B2
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Prior art keywords
substrate
conductive
layer
back side
integrated circuit
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Expired - Lifetime
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JP52901495A
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Japanese (ja)
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JPH09500240A (ja
Inventor
チャング、マイク・エフ
キング、オウヤング
シィエ、フゥ−イユァン
ホー、ユエ−シー
ダン、ジョウェイ
ヒュッサー、ハンス−ユルゲン
ツァハイ、ラインハルト
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Vishay Siliconix Inc
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Siliconix Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3672Foil-like cooling fins or heat sinks
    • HELECTRICITY
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732Diamonds
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    • H01L23/00Details of semiconductor or other solid state devices
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    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738Semiconductor materials
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
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    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
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    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
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    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
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    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP52901495A 1994-05-05 1995-05-04 表面取り付け及びフリップチップ技術 Expired - Lifetime JP4308904B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US321,937 1989-03-10
US23855294A 1994-05-05 1994-05-05
US238,552 1994-05-05
US32193794A 1994-10-12 1994-10-12
PCT/US1995/005217 WO1995031006A1 (en) 1994-05-05 1995-05-04 Surface mount and flip chip technology

Publications (2)

Publication Number Publication Date
JPH09500240A JPH09500240A (ja) 1997-01-07
JP4308904B2 true JP4308904B2 (ja) 2009-08-05

Family

ID=26931764

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Application Number Title Priority Date Filing Date
JP52901495A Expired - Lifetime JP4308904B2 (ja) 1994-05-05 1995-05-04 表面取り付け及びフリップチップ技術

Country Status (6)

Country Link
EP (1) EP0707741A4 (de)
JP (1) JP4308904B2 (de)
KR (1) KR100232410B1 (de)
AU (1) AU2462595A (de)
DE (1) DE707741T1 (de)
WO (1) WO1995031006A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9199357B2 (en) 1997-04-04 2015-12-01 Chien-Min Sung Brazed diamond tools and methods for making the same
US9221154B2 (en) 1997-04-04 2015-12-29 Chien-Min Sung Diamond tools and methods for making the same
US9409280B2 (en) 1997-04-04 2016-08-09 Chien-Min Sung Brazed diamond tools and methods for making the same
US9868100B2 (en) 1997-04-04 2018-01-16 Chien-Min Sung Brazed diamond tools and methods for making the same
US9463552B2 (en) 1997-04-04 2016-10-11 Chien-Min Sung Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods
US9238207B2 (en) 1997-04-04 2016-01-19 Chien-Min Sung Brazed diamond tools and methods for making the same
DE19718618C2 (de) 1997-05-02 1999-12-02 Daimler Chrysler Ag Komposit-Struktur mit einem mehrere mikroelektronische Bauteile und eine Diamantschicht aufweisenden Wachstums-Substrat sowie Verfahren zur Herstellung der Komposit-Struktur
FR2793953B1 (fr) 1999-05-21 2002-08-09 Thomson Csf Capacite thermique pour composant electronique fonctionnant en impulsions longues
JP4761644B2 (ja) * 2001-04-18 2011-08-31 三菱電機株式会社 半導体装置
AU2002309459A1 (en) * 2001-06-13 2002-12-23 Advanpack Solutions Pte Ltd Method for forming a wafer level chip scale package, and package formed thereby
EP2560199B1 (de) 2002-04-05 2016-08-03 STMicroelectronics S.r.l. Verfahren zum Herstellen einer durchisolierten Verbindung in einem Körper aus einem Halbleitermaterial
JP2004104074A (ja) * 2002-07-17 2004-04-02 Sumitomo Electric Ind Ltd 半導体装置用部材
CA2543909C (en) * 2003-11-18 2012-01-31 Halliburton Energy Services, Inc. High temperature electronic devices
FR2874127B1 (fr) * 2004-08-03 2006-12-08 United Monolithic Semiconduct Boitier miniature hyperfrequence pour montage en surface et procede de fabrication du boitier
US8393934B2 (en) 2006-11-16 2013-03-12 Chien-Min Sung CMP pad dressers with hybridized abrasive surface and related methods
US9724802B2 (en) 2005-05-16 2017-08-08 Chien-Min Sung CMP pad dressers having leveled tips and associated methods
US8678878B2 (en) 2009-09-29 2014-03-25 Chien-Min Sung System for evaluating and/or improving performance of a CMP pad dresser
US9138862B2 (en) 2011-05-23 2015-09-22 Chien-Min Sung CMP pad dresser having leveled tips and associated methods
SE1050461A1 (sv) 2006-02-01 2010-05-10 Silex Microsystems Ab Metoder för tillverkning av en startsubstratskiva för halvledartillverkning, med skivgenomgående anslutningar
FR2923080A1 (fr) * 2007-10-26 2009-05-01 St Microelectronics Rousset Procede de fabrication d'un via dans une plaquette de semi-conducteur
FR2955202B1 (fr) * 2009-12-10 2012-08-03 St Microelectronics Crolles 2 Dispositif microelectronique integre avec liaisons traversantes.
TWI487019B (en) 2011-05-23 2015-06-01 Cmp pad dresser having leveled tips and associated methods
JP7232137B2 (ja) * 2019-06-25 2023-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102019122888B4 (de) * 2019-08-27 2024-09-26 Infineon Technologies Ag Leistungshalbleitervorrichtung und Verfahren

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JPS62154651A (ja) * 1985-12-26 1987-07-09 Nippon Soken Inc 集積回路基板
JPS62194652A (ja) * 1986-02-21 1987-08-27 Hitachi Ltd 半導体装置
US4972250A (en) * 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
JPH01120853A (ja) * 1987-11-04 1989-05-12 Mitsubishi Electric Corp 半導体装置
US5131963A (en) * 1987-11-16 1992-07-21 Crystallume Silicon on insulator semiconductor composition containing thin synthetic diamone films
US5091331A (en) * 1990-04-16 1992-02-25 Harris Corporation Ultra-thin circuit fabrication by controlled wafer debonding
JP3047986B2 (ja) * 1990-07-25 2000-06-05 株式会社日立製作所 半導体装置
US5170930A (en) * 1991-11-14 1992-12-15 Microelectronics And Computer Technology Corporation Liquid metal paste for thermal and electrical connections
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5272104A (en) * 1993-03-11 1993-12-21 Harris Corporation Bonded wafer process incorporating diamond insulator
EP0637078A1 (de) * 1993-07-29 1995-02-01 Motorola, Inc. Eine Halbleiteranordnung mit verbesserter Wärmezerstreuung

Also Published As

Publication number Publication date
JPH09500240A (ja) 1997-01-07
KR100232410B1 (ko) 1999-12-01
AU2462595A (en) 1995-11-29
DE707741T1 (de) 1996-11-28
EP0707741A1 (de) 1996-04-24
EP0707741A4 (de) 1997-07-02
WO1995031006A1 (en) 1995-11-16

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