AU2462595A - Surface mount and flip chip technology - Google Patents

Surface mount and flip chip technology

Info

Publication number
AU2462595A
AU2462595A AU24625/95A AU2462595A AU2462595A AU 2462595 A AU2462595 A AU 2462595A AU 24625/95 A AU24625/95 A AU 24625/95A AU 2462595 A AU2462595 A AU 2462595A AU 2462595 A AU2462595 A AU 2462595A
Authority
AU
Australia
Prior art keywords
surface mount
flip chip
chip technology
technology
flip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU24625/95A
Inventor
Mike F Chang
Jowei Dun
Hans-Jurgen Fusser
Yueh-Se Ho
Fwu-Iuan Hshieh
King Owyang
Reinhard Zachai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of AU2462595A publication Critical patent/AU2462595A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3672Foil-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732Diamonds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738Semiconductor materials
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    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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    • H01ELECTRIC ELEMENTS
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
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    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
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    • H01L2924/01015Phosphorus [P]
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    • H01L2924/01029Copper [Cu]
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    • H01L2924/01042Molybdenum [Mo]
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    • H01L2924/01074Tungsten [W]
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    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
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    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
AU24625/95A 1994-05-05 1995-05-04 Surface mount and flip chip technology Abandoned AU2462595A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US321937 1989-03-10
US23855294A 1994-05-05 1994-05-05
US238552 1994-05-05
US32193794A 1994-10-12 1994-10-12
PCT/US1995/005217 WO1995031006A1 (en) 1994-05-05 1995-05-04 Surface mount and flip chip technology

Publications (1)

Publication Number Publication Date
AU2462595A true AU2462595A (en) 1995-11-29

Family

ID=26931764

Family Applications (1)

Application Number Title Priority Date Filing Date
AU24625/95A Abandoned AU2462595A (en) 1994-05-05 1995-05-04 Surface mount and flip chip technology

Country Status (6)

Country Link
EP (1) EP0707741A4 (en)
JP (1) JP4308904B2 (en)
KR (1) KR100232410B1 (en)
AU (1) AU2462595A (en)
DE (1) DE707741T1 (en)
WO (1) WO1995031006A1 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9238207B2 (en) 1997-04-04 2016-01-19 Chien-Min Sung Brazed diamond tools and methods for making the same
US9199357B2 (en) 1997-04-04 2015-12-01 Chien-Min Sung Brazed diamond tools and methods for making the same
US9409280B2 (en) 1997-04-04 2016-08-09 Chien-Min Sung Brazed diamond tools and methods for making the same
US9868100B2 (en) 1997-04-04 2018-01-16 Chien-Min Sung Brazed diamond tools and methods for making the same
US9463552B2 (en) 1997-04-04 2016-10-11 Chien-Min Sung Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods
US9221154B2 (en) 1997-04-04 2015-12-29 Chien-Min Sung Diamond tools and methods for making the same
DE19718618C2 (en) 1997-05-02 1999-12-02 Daimler Chrysler Ag Composite structure with a growth substrate having several microelectronic components and a diamond layer, and method for producing the composite structure
FR2793953B1 (en) 1999-05-21 2002-08-09 Thomson Csf THERMAL CAPACITY FOR ELECTRONIC COMPONENT OPERATING IN LONG PULSES
JP4761644B2 (en) * 2001-04-18 2011-08-31 三菱電機株式会社 Semiconductor device
AU2002309459A1 (en) * 2001-06-13 2002-12-23 Advanpack Solutions Pte Ltd Method for forming a wafer level chip scale package, and package formed thereby
EP2560199B1 (en) 2002-04-05 2016-08-03 STMicroelectronics S.r.l. Process for manufacturing a through insulated interconnection in a body of semiconductor material
JP2004104074A (en) * 2002-07-17 2004-04-02 Sumitomo Electric Ind Ltd Member for semiconductor device
WO2005050257A2 (en) * 2003-11-18 2005-06-02 Halliburton Energy Services, Inc. High temperature imaging device
FR2874127B1 (en) * 2004-08-03 2006-12-08 United Monolithic Semiconduct MINIATURE MICROFREQUENCY CASE FOR SURFACE MOUNTING AND METHOD FOR MANUFACTURING THE HOUSING
US9724802B2 (en) 2005-05-16 2017-08-08 Chien-Min Sung CMP pad dressers having leveled tips and associated methods
US8678878B2 (en) 2009-09-29 2014-03-25 Chien-Min Sung System for evaluating and/or improving performance of a CMP pad dresser
US8393934B2 (en) 2006-11-16 2013-03-12 Chien-Min Sung CMP pad dressers with hybridized abrasive surface and related methods
US9138862B2 (en) 2011-05-23 2015-09-22 Chien-Min Sung CMP pad dresser having leveled tips and associated methods
WO2007089206A1 (en) 2006-02-01 2007-08-09 Silex Microsystems Ab Vias and method of making
FR2923080A1 (en) * 2007-10-26 2009-05-01 St Microelectronics Rousset Forming vias in semiconductor wafer, by making wafer having closed perimeter on its front side, filling wafer with dielectric material, thinning wafer by abrasion and/or etching, and removing semiconductor extending inside perimeter
FR2955202B1 (en) * 2009-12-10 2012-08-03 St Microelectronics Crolles 2 INTEGRATED MICROELECTRONIC DEVICE WITH THROUGH CONNECTIONS.
TWI487019B (en) 2011-05-23 2015-06-01 Cmp pad dresser having leveled tips and associated methods
JP7232137B2 (en) * 2019-06-25 2023-03-02 ルネサスエレクトロニクス株式会社 Semiconductor device and its manufacturing method
DE102019122888A1 (en) * 2019-08-27 2021-03-04 Infineon Technologies Ag Power semiconductor device and method

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JPS62154651A (en) * 1985-12-26 1987-07-09 Nippon Soken Inc Integrated circuit substrate
JPS62194652A (en) * 1986-02-21 1987-08-27 Hitachi Ltd Semiconductor device
US4972250A (en) * 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
JPH01120853A (en) * 1987-11-04 1989-05-12 Mitsubishi Electric Corp Semiconductor device
US5131963A (en) * 1987-11-16 1992-07-21 Crystallume Silicon on insulator semiconductor composition containing thin synthetic diamone films
US5091331A (en) * 1990-04-16 1992-02-25 Harris Corporation Ultra-thin circuit fabrication by controlled wafer debonding
JP3047986B2 (en) * 1990-07-25 2000-06-05 株式会社日立製作所 Semiconductor device
US5170930A (en) * 1991-11-14 1992-12-15 Microelectronics And Computer Technology Corporation Liquid metal paste for thermal and electrical connections
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5272104A (en) * 1993-03-11 1993-12-21 Harris Corporation Bonded wafer process incorporating diamond insulator
EP0637078A1 (en) * 1993-07-29 1995-02-01 Motorola, Inc. A semiconductor device with improved heat dissipation

Also Published As

Publication number Publication date
WO1995031006A1 (en) 1995-11-16
EP0707741A1 (en) 1996-04-24
KR100232410B1 (en) 1999-12-01
JPH09500240A (en) 1997-01-07
JP4308904B2 (en) 2009-08-05
EP0707741A4 (en) 1997-07-02
DE707741T1 (en) 1996-11-28

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