JPH09500240A - 表面取り付け及びフリップチップ技術 - Google Patents
表面取り付け及びフリップチップ技術Info
- Publication number
- JPH09500240A JPH09500240A JP7529014A JP52901495A JPH09500240A JP H09500240 A JPH09500240 A JP H09500240A JP 7529014 A JP7529014 A JP 7529014A JP 52901495 A JP52901495 A JP 52901495A JP H09500240 A JPH09500240 A JP H09500240A
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- substrate
- conductive
- integrated circuit
- layer
- back side
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.集積回路であって、 主面を備えた半導体基板と、 前記半導体基板内に形成された複数の半導体デバイスと、 前記主面の上に形成され、かつ前記半導体基板デバイスと電気的に接続された 導電性ラインのパターンと、 前記導電線ラインのパターンの少なくとも一部分の上に配置されたダイヤモン ド膜と、 前記ダイヤモンド膜に接着され、かつ前記導電性ラインのパターンの上に配置 された熱伝導性プレートと、 前記基板の前記主面から前記基板を貫通し前記基板の裏側面に達する複数の絶 縁された溝とを有することを特徴とする集積回路。 2.前記基板の前記裏側面に形成された複数の導電性接続部を更に有し、 前記導電性接続部の各々が、前記複数の溝によって画定された前記裏側面の選 択された部分に接続されていることを特徴とする請求項1に記載の集積回路。 3.前記基板の厚さが、約50μm以下であることを特徴とする請求項1に記載 の集積回路。 4.前記熱伝導性のプレートと平行に設けられ、かつ前記第1の導電性ラインの パターンと電気的に接続された第2の導電性ラインのパターンを更に有すること を特徴とする請求項1に記載の集積回路。 5.前記基板が前記基板の主面から前記基板の裏側面に延在する複数の導電性開 孔部を画定し、前記導電性開孔部の各々は、前記主面で前記導電性ラインのパタ ーンの一部と電気的に接続され、かつ前記裏側面で電気的接続部を形成すること を特徴とする請求項1に記載の集積回路。 6.前記裏側面の前記電気的接続部の各々が、前記裏側面から延出する ポスト部分からなることを特徴とする請求項5に記載の集積回路。 7.前記ダイヤモンド膜が、0.5μm〜10μmの厚さを有することを特徴と する請求項1に記載の集積回路。 8.前記ダイヤモンド膜が、熱伝導性の接着剤層によって前記熱伝導性のプレー トに接着されていることを特徴とする請求項1に記載の集積回路。 9.集積回路を製造する方法であって、 主面を備えた半導体基板を提供する過程と、 前記基板内に複数の半導体デバイスを形成する過程と、 特定の深さで前記基板の前記主面から前記基板内に向かって延在する複数の溝 を前記基板に形成する過程と、 前記溝の各々に絶縁材料層を形成する過程と、 前記主面の上に前記複数の半導体デバイスと電気的に接続された導電性ライン のパターンを形成する過程と、 前記基板の上にダイヤモンド膜を形成する過程と、 前記基板の前記主面を覆うように前記ダイヤモンド膜に熱伝導性プレートを接 着する接着過程と、 前記主面の反対側の前記基板の裏側面から前記基板の一部を除去し、前記溝の 各々の少なくとも底部を露出させる除去過程とを有すること特徴とする集積回路 の製造方法。 10.前記裏側面に導電層を形成する過程と、 各々が、前記複数の溝によって画定された前記裏画面の選択された部分と接触 した複数の接続領域として前記導電層をパターニングする過程とを更に有するこ と特徴とする請求項9に記載の方法。 11.前記除去過程が、前記基板の前記基板の厚さを約100μmとすることを 特徴とする請求項9に記載の方法。 12.前記接着過程の前に、前記熱伝導性プレートの表面に第2の導電性ライン のパターンを形成する過程を更に有し、 前記接着過程が前記第2の導電性ラインのパターンの一部を前記第1の導電性 ラインのパターンの一部と電気的に接続する過程を含むことを特徴とする請求項 9に記載の方法。 13.前記接着過程が前記ダイヤモンド膜と前記熱伝導性プレートとの間に熱伝 導性接着剤を塗布する過程を含むことを特徴とする請求項9に記載の方法。 14.前記除去過程の後に、前記裏側面から前記基板の前記主面へ延在する複数 の開孔部を形成する過程と、 前記主面で前記導電性ラインのパターンの一部と電気的に接続され、かつ前記 裏側面で電気的接続部を形成する導電性材料を、前記開孔部の各々に提供する過 程とを有すること特徴とする請求項9に記載の方法。 15.前記導電性材料を提供する過程が、前記裏側面に前記導電性材料からなる 層を形成する過程を有し、 各々が、前記開孔部の対応する開孔部内の導電性材料に電気的に接続されると 共に前記裏側面から外側に延出する導電性材料層からなる複数のポスト部分を形 成する過程を有することを特徴とする請求項14に記載の方法。 16.前記ダイヤモンド膜が、厚さ0.5μm〜10μmを有するように形成さ れることを特徴とする請求項9に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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US321,937 | 1989-03-10 | ||
US23855294A | 1994-05-05 | 1994-05-05 | |
US32193794A | 1994-10-12 | 1994-10-12 | |
US238,552 | 1994-10-12 | ||
PCT/US1995/005217 WO1995031006A1 (en) | 1994-05-05 | 1995-05-04 | Surface mount and flip chip technology |
Publications (2)
Publication Number | Publication Date |
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JPH09500240A true JPH09500240A (ja) | 1997-01-07 |
JP4308904B2 JP4308904B2 (ja) | 2009-08-05 |
Family
ID=26931764
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52901495A Expired - Lifetime JP4308904B2 (ja) | 1994-05-05 | 1995-05-04 | 表面取り付け及びフリップチップ技術 |
Country Status (6)
Country | Link |
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EP (1) | EP0707741A4 (ja) |
JP (1) | JP4308904B2 (ja) |
KR (1) | KR100232410B1 (ja) |
AU (1) | AU2462595A (ja) |
DE (1) | DE707741T1 (ja) |
WO (1) | WO1995031006A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004104074A (ja) * | 2002-07-17 | 2004-04-02 | Sumitomo Electric Ind Ltd | 半導体装置用部材 |
JP2007519228A (ja) * | 2003-11-18 | 2007-07-12 | ハリバートン エナジー サービシーズ,インコーポレーテッド | 高温電子素子 |
JP2021005598A (ja) * | 2019-06-25 | 2021-01-14 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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US9238207B2 (en) | 1997-04-04 | 2016-01-19 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9221154B2 (en) | 1997-04-04 | 2015-12-29 | Chien-Min Sung | Diamond tools and methods for making the same |
US9463552B2 (en) | 1997-04-04 | 2016-10-11 | Chien-Min Sung | Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods |
US9868100B2 (en) | 1997-04-04 | 2018-01-16 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
US9409280B2 (en) | 1997-04-04 | 2016-08-09 | Chien-Min Sung | Brazed diamond tools and methods for making the same |
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DE19718618C2 (de) * | 1997-05-02 | 1999-12-02 | Daimler Chrysler Ag | Komposit-Struktur mit einem mehrere mikroelektronische Bauteile und eine Diamantschicht aufweisenden Wachstums-Substrat sowie Verfahren zur Herstellung der Komposit-Struktur |
FR2793953B1 (fr) | 1999-05-21 | 2002-08-09 | Thomson Csf | Capacite thermique pour composant electronique fonctionnant en impulsions longues |
JP4761644B2 (ja) * | 2001-04-18 | 2011-08-31 | 三菱電機株式会社 | 半導体装置 |
CN1315187C (zh) * | 2001-06-13 | 2007-05-09 | 先进封装解决方案私人有限公司 | 形成晶片级别芯片规模封装的方法及由此形成的封装 |
EP2560199B1 (en) | 2002-04-05 | 2016-08-03 | STMicroelectronics S.r.l. | Process for manufacturing a through insulated interconnection in a body of semiconductor material |
FR2874127B1 (fr) * | 2004-08-03 | 2006-12-08 | United Monolithic Semiconduct | Boitier miniature hyperfrequence pour montage en surface et procede de fabrication du boitier |
US8974270B2 (en) | 2011-05-23 | 2015-03-10 | Chien-Min Sung | CMP pad dresser having leveled tips and associated methods |
US9138862B2 (en) | 2011-05-23 | 2015-09-22 | Chien-Min Sung | CMP pad dresser having leveled tips and associated methods |
US9724802B2 (en) | 2005-05-16 | 2017-08-08 | Chien-Min Sung | CMP pad dressers having leveled tips and associated methods |
US8678878B2 (en) | 2009-09-29 | 2014-03-25 | Chien-Min Sung | System for evaluating and/or improving performance of a CMP pad dresser |
US8393934B2 (en) | 2006-11-16 | 2013-03-12 | Chien-Min Sung | CMP pad dressers with hybridized abrasive surface and related methods |
EP2005467B1 (en) * | 2006-02-01 | 2018-07-11 | Silex Microsystems AB | Methods for making a starting substrate wafer for semiconductor engineering having wafer through connections |
FR2923080A1 (fr) * | 2007-10-26 | 2009-05-01 | St Microelectronics Rousset | Procede de fabrication d'un via dans une plaquette de semi-conducteur |
FR2955202B1 (fr) | 2009-12-10 | 2012-08-03 | St Microelectronics Crolles 2 | Dispositif microelectronique integre avec liaisons traversantes. |
DE102019122888A1 (de) * | 2019-08-27 | 2021-03-04 | Infineon Technologies Ag | Leistungshalbleitervorrichtung und Verfahren |
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Publication number | Priority date | Publication date | Assignee | Title |
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JPS62154651A (ja) * | 1985-12-26 | 1987-07-09 | Nippon Soken Inc | 集積回路基板 |
JPS62194652A (ja) * | 1986-02-21 | 1987-08-27 | Hitachi Ltd | 半導体装置 |
US4972250A (en) * | 1987-03-02 | 1990-11-20 | Microwave Technology, Inc. | Protective coating useful as passivation layer for semiconductor devices |
JPH01120853A (ja) * | 1987-11-04 | 1989-05-12 | Mitsubishi Electric Corp | 半導体装置 |
US5131963A (en) * | 1987-11-16 | 1992-07-21 | Crystallume | Silicon on insulator semiconductor composition containing thin synthetic diamone films |
US5091331A (en) * | 1990-04-16 | 1992-02-25 | Harris Corporation | Ultra-thin circuit fabrication by controlled wafer debonding |
JP3047986B2 (ja) * | 1990-07-25 | 2000-06-05 | 株式会社日立製作所 | 半導体装置 |
US5170930A (en) * | 1991-11-14 | 1992-12-15 | Microelectronics And Computer Technology Corporation | Liquid metal paste for thermal and electrical connections |
US5426072A (en) * | 1993-01-21 | 1995-06-20 | Hughes Aircraft Company | Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate |
US5272104A (en) * | 1993-03-11 | 1993-12-21 | Harris Corporation | Bonded wafer process incorporating diamond insulator |
EP0637078A1 (en) * | 1993-07-29 | 1995-02-01 | Motorola, Inc. | A semiconductor device with improved heat dissipation |
-
1995
- 1995-05-04 DE DE0707741T patent/DE707741T1/de active Pending
- 1995-05-04 AU AU24625/95A patent/AU2462595A/en not_active Abandoned
- 1995-05-04 KR KR1019960700077A patent/KR100232410B1/ko not_active IP Right Cessation
- 1995-05-04 JP JP52901495A patent/JP4308904B2/ja not_active Expired - Lifetime
- 1995-05-04 WO PCT/US1995/005217 patent/WO1995031006A1/en not_active Application Discontinuation
- 1995-05-04 EP EP95918863A patent/EP0707741A4/en not_active Withdrawn
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004104074A (ja) * | 2002-07-17 | 2004-04-02 | Sumitomo Electric Ind Ltd | 半導体装置用部材 |
JP2007519228A (ja) * | 2003-11-18 | 2007-07-12 | ハリバートン エナジー サービシーズ,インコーポレーテッド | 高温電子素子 |
JP2021005598A (ja) * | 2019-06-25 | 2021-01-14 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR100232410B1 (ko) | 1999-12-01 |
WO1995031006A1 (en) | 1995-11-16 |
AU2462595A (en) | 1995-11-29 |
JP4308904B2 (ja) | 2009-08-05 |
DE707741T1 (de) | 1996-11-28 |
EP0707741A1 (en) | 1996-04-24 |
EP0707741A4 (en) | 1997-07-02 |
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