EP0707741A4 - SURFACE MOUNTING AND PROTUBERANCE CHIP TECHNOLOGY - Google Patents

SURFACE MOUNTING AND PROTUBERANCE CHIP TECHNOLOGY

Info

Publication number
EP0707741A4
EP0707741A4 EP95918863A EP95918863A EP0707741A4 EP 0707741 A4 EP0707741 A4 EP 0707741A4 EP 95918863 A EP95918863 A EP 95918863A EP 95918863 A EP95918863 A EP 95918863A EP 0707741 A4 EP0707741 A4 EP 0707741A4
Authority
EP
European Patent Office
Prior art keywords
substrate
layer
conductive
forming
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP95918863A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0707741A1 (en
Inventor
Mike F Chang
King Owyang
Fwu-Iuan Hshieh
Yueh-Se Ho
Jowei Dun
Hans-Juergen Fuesser
Reinhard Zachai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Vishay Siliconix Inc
Original Assignee
Siliconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconix Inc filed Critical Siliconix Inc
Publication of EP0707741A1 publication Critical patent/EP0707741A1/en
Publication of EP0707741A4 publication Critical patent/EP0707741A4/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3738—Semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
EP95918863A 1994-05-05 1995-05-04 SURFACE MOUNTING AND PROTUBERANCE CHIP TECHNOLOGY Withdrawn EP0707741A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US23855294A 1994-05-05 1994-05-05
US238552 1994-05-05
US32193794A 1994-10-12 1994-10-12
US321937 1994-10-12
PCT/US1995/005217 WO1995031006A1 (en) 1994-05-05 1995-05-04 Surface mount and flip chip technology

Publications (2)

Publication Number Publication Date
EP0707741A1 EP0707741A1 (en) 1996-04-24
EP0707741A4 true EP0707741A4 (en) 1997-07-02

Family

ID=26931764

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95918863A Withdrawn EP0707741A4 (en) 1994-05-05 1995-05-04 SURFACE MOUNTING AND PROTUBERANCE CHIP TECHNOLOGY

Country Status (6)

Country Link
EP (1) EP0707741A4 (ja)
JP (1) JP4308904B2 (ja)
KR (1) KR100232410B1 (ja)
AU (1) AU2462595A (ja)
DE (1) DE707741T1 (ja)
WO (1) WO1995031006A1 (ja)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9238207B2 (en) 1997-04-04 2016-01-19 Chien-Min Sung Brazed diamond tools and methods for making the same
US9463552B2 (en) 1997-04-04 2016-10-11 Chien-Min Sung Superbrasvie tools containing uniformly leveled superabrasive particles and associated methods
US9409280B2 (en) 1997-04-04 2016-08-09 Chien-Min Sung Brazed diamond tools and methods for making the same
US9221154B2 (en) 1997-04-04 2015-12-29 Chien-Min Sung Diamond tools and methods for making the same
US9199357B2 (en) 1997-04-04 2015-12-01 Chien-Min Sung Brazed diamond tools and methods for making the same
US9868100B2 (en) 1997-04-04 2018-01-16 Chien-Min Sung Brazed diamond tools and methods for making the same
DE19718618C2 (de) 1997-05-02 1999-12-02 Daimler Chrysler Ag Komposit-Struktur mit einem mehrere mikroelektronische Bauteile und eine Diamantschicht aufweisenden Wachstums-Substrat sowie Verfahren zur Herstellung der Komposit-Struktur
FR2793953B1 (fr) * 1999-05-21 2002-08-09 Thomson Csf Capacite thermique pour composant electronique fonctionnant en impulsions longues
JP4761644B2 (ja) * 2001-04-18 2011-08-31 三菱電機株式会社 半導体装置
WO2002101829A1 (en) * 2001-06-13 2002-12-19 Advanpack Solutions Pte Ltd Method for forming a wafer level chip scale package, and package formed thereby
EP2560199B1 (en) 2002-04-05 2016-08-03 STMicroelectronics S.r.l. Process for manufacturing a through insulated interconnection in a body of semiconductor material
JP2004104074A (ja) * 2002-07-17 2004-04-02 Sumitomo Electric Ind Ltd 半導体装置用部材
US7301223B2 (en) * 2003-11-18 2007-11-27 Halliburton Energy Services, Inc. High temperature electronic devices
FR2874127B1 (fr) * 2004-08-03 2006-12-08 United Monolithic Semiconduct Boitier miniature hyperfrequence pour montage en surface et procede de fabrication du boitier
US9724802B2 (en) 2005-05-16 2017-08-08 Chien-Min Sung CMP pad dressers having leveled tips and associated methods
US9138862B2 (en) 2011-05-23 2015-09-22 Chien-Min Sung CMP pad dresser having leveled tips and associated methods
US8678878B2 (en) 2009-09-29 2014-03-25 Chien-Min Sung System for evaluating and/or improving performance of a CMP pad dresser
US8393934B2 (en) 2006-11-16 2013-03-12 Chien-Min Sung CMP pad dressers with hybridized abrasive surface and related methods
US8324103B2 (en) 2006-02-01 2012-12-04 Silex Microsystems Ab Vias and method of making
FR2923080A1 (fr) * 2007-10-26 2009-05-01 St Microelectronics Rousset Procede de fabrication d'un via dans une plaquette de semi-conducteur
FR2955202B1 (fr) * 2009-12-10 2012-08-03 St Microelectronics Crolles 2 Dispositif microelectronique integre avec liaisons traversantes.
WO2012162430A2 (en) 2011-05-23 2012-11-29 Chien-Min Sung Cmp pad dresser having leveled tips and associated methods
JP7232137B2 (ja) * 2019-06-25 2023-03-02 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
DE102019122888A1 (de) * 2019-08-27 2021-03-04 Infineon Technologies Ag Leistungshalbleitervorrichtung und Verfahren

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154651A (ja) * 1985-12-26 1987-07-09 Nippon Soken Inc 集積回路基板
US4764804A (en) * 1986-02-21 1988-08-16 Hitachi, Ltd. Semiconductor device and process for producing the same
JPH01120853A (ja) * 1987-11-04 1989-05-12 Mitsubishi Electric Corp 半導体装置
EP0317124A2 (en) * 1987-11-16 1989-05-24 Crystallume Silicon on insulator semiconductor components containing thin synthetic diamond films
EP0637078A1 (en) * 1993-07-29 1995-02-01 Motorola, Inc. A semiconductor device with improved heat dissipation

Family Cites Families (6)

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Publication number Priority date Publication date Assignee Title
US4972250A (en) * 1987-03-02 1990-11-20 Microwave Technology, Inc. Protective coating useful as passivation layer for semiconductor devices
US5091331A (en) * 1990-04-16 1992-02-25 Harris Corporation Ultra-thin circuit fabrication by controlled wafer debonding
JP3047986B2 (ja) * 1990-07-25 2000-06-05 株式会社日立製作所 半導体装置
US5170930A (en) * 1991-11-14 1992-12-15 Microelectronics And Computer Technology Corporation Liquid metal paste for thermal and electrical connections
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5272104A (en) * 1993-03-11 1993-12-21 Harris Corporation Bonded wafer process incorporating diamond insulator

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154651A (ja) * 1985-12-26 1987-07-09 Nippon Soken Inc 集積回路基板
US4764804A (en) * 1986-02-21 1988-08-16 Hitachi, Ltd. Semiconductor device and process for producing the same
JPH01120853A (ja) * 1987-11-04 1989-05-12 Mitsubishi Electric Corp 半導体装置
EP0317124A2 (en) * 1987-11-16 1989-05-24 Crystallume Silicon on insulator semiconductor components containing thin synthetic diamond films
EP0637078A1 (en) * 1993-07-29 1995-02-01 Motorola, Inc. A semiconductor device with improved heat dissipation

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 011, no. 390 (E - 567) 19 December 1987 (1987-12-19) *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 364 (E - 805) 14 August 1989 (1989-08-14) *
See also references of WO9531006A1 *
SODERBARG A ET AL: "FORMATION OF HEAT SINKS USING BONDING AND ETCH BACK TECHNIQUE IN COMBINATION WITH DIAMOND DEPOSITION", EXTENDED ABSTRACTS, vol. 93/1, 1 January 1993 (1993-01-01), pages 1239, XP000432666 *

Also Published As

Publication number Publication date
DE707741T1 (de) 1996-11-28
JP4308904B2 (ja) 2009-08-05
WO1995031006A1 (en) 1995-11-16
EP0707741A1 (en) 1996-04-24
KR100232410B1 (ko) 1999-12-01
JPH09500240A (ja) 1997-01-07
AU2462595A (en) 1995-11-29

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