JP4302335B2 - 太陽電池の作製方法 - Google Patents

太陽電池の作製方法 Download PDF

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Publication number
JP4302335B2
JP4302335B2 JP2001152033A JP2001152033A JP4302335B2 JP 4302335 B2 JP4302335 B2 JP 4302335B2 JP 2001152033 A JP2001152033 A JP 2001152033A JP 2001152033 A JP2001152033 A JP 2001152033A JP 4302335 B2 JP4302335 B2 JP 4302335B2
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JP
Japan
Prior art keywords
protective film
semiconductor layer
lower electrode
solar cell
laser beam
Prior art date
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Expired - Fee Related
Application number
JP2001152033A
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English (en)
Japanese (ja)
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JP2002353473A (ja
JP2002353473A5 (enExample
Inventor
広樹 安達
和夫 西
雅人 米澤
幸広 磯部
久人 篠原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
TDK Corp
Original Assignee
Semiconductor Energy Laboratory Co Ltd
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd, TDK Corp filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001152033A priority Critical patent/JP4302335B2/ja
Priority to US10/151,300 priority patent/US6846696B2/en
Publication of JP2002353473A publication Critical patent/JP2002353473A/ja
Priority to US11/033,380 priority patent/US7365004B2/en
Publication of JP2002353473A5 publication Critical patent/JP2002353473A5/ja
Application granted granted Critical
Publication of JP4302335B2 publication Critical patent/JP4302335B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H10F19/33Patterning processes to connect the photovoltaic cells, e.g. laser cutting of conductive or active layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147Shapes of bodies
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
JP2001152033A 2001-05-22 2001-05-22 太陽電池の作製方法 Expired - Fee Related JP4302335B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001152033A JP4302335B2 (ja) 2001-05-22 2001-05-22 太陽電池の作製方法
US10/151,300 US6846696B2 (en) 2001-05-22 2002-05-21 Method for manufacturing solar battery
US11/033,380 US7365004B2 (en) 2001-05-22 2005-01-12 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001152033A JP4302335B2 (ja) 2001-05-22 2001-05-22 太陽電池の作製方法

Publications (3)

Publication Number Publication Date
JP2002353473A JP2002353473A (ja) 2002-12-06
JP2002353473A5 JP2002353473A5 (enExample) 2005-05-12
JP4302335B2 true JP4302335B2 (ja) 2009-07-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001152033A Expired - Fee Related JP4302335B2 (ja) 2001-05-22 2001-05-22 太陽電池の作製方法

Country Status (2)

Country Link
US (2) US6846696B2 (enExample)
JP (1) JP4302335B2 (enExample)

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US20090111206A1 (en) 1999-03-30 2009-04-30 Daniel Luch Collector grid, electrode structures and interrconnect structures for photovoltaic arrays and methods of manufacture
US7507903B2 (en) 1999-03-30 2009-03-24 Daniel Luch Substrate and collector grid structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
US8138413B2 (en) 2006-04-13 2012-03-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8664030B2 (en) 1999-03-30 2014-03-04 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8222513B2 (en) 2006-04-13 2012-07-17 Daniel Luch Collector grid, electrode structures and interconnect structures for photovoltaic arrays and methods of manufacture
US8198696B2 (en) 2000-02-04 2012-06-12 Daniel Luch Substrate structures for integrated series connected photovoltaic arrays and process of manufacture of such arrays
JP4459514B2 (ja) * 2002-09-05 2010-04-28 株式会社半導体エネルギー研究所 レーザーマーキング装置
JP2004188475A (ja) * 2002-12-13 2004-07-08 Disco Abrasive Syst Ltd レーザー加工方法
US7732229B2 (en) * 2004-09-18 2010-06-08 Nanosolar, Inc. Formation of solar cells with conductive barrier layers and foil substrates
US7838868B2 (en) * 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US7276724B2 (en) * 2005-01-20 2007-10-02 Nanosolar, Inc. Series interconnected optoelectronic device module assembly
US8455753B2 (en) * 2005-01-14 2013-06-04 Semiconductor Energy Laboratory Co., Ltd. Solar cell and semiconductor device, and manufacturing method thereof
US8927315B1 (en) 2005-01-20 2015-01-06 Aeris Capital Sustainable Ip Ltd. High-throughput assembly of series interconnected solar cells
JP4648056B2 (ja) * 2005-03-31 2011-03-09 株式会社ディスコ ウエーハのレーザー加工方法およびレーザー加工装置
US7651932B2 (en) 2005-05-31 2010-01-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing antenna and method for manufacturing semiconductor device
US9006563B2 (en) 2006-04-13 2015-04-14 Solannex, Inc. Collector grid and interconnect structures for photovoltaic arrays and modules
US8884155B2 (en) 2006-04-13 2014-11-11 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9865758B2 (en) 2006-04-13 2018-01-09 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8822810B2 (en) 2006-04-13 2014-09-02 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US8729385B2 (en) 2006-04-13 2014-05-20 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
US9236512B2 (en) 2006-04-13 2016-01-12 Daniel Luch Collector grid and interconnect structures for photovoltaic arrays and modules
GB0615651D0 (en) * 2006-08-07 2006-09-13 Sun Chemical Bv A process for manufacturing solar cells
WO2008103293A1 (en) 2007-02-16 2008-08-28 Nanogram Corporation Solar cell structures, photovoltaic modules and corresponding processes
US20100294349A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Back contact solar cells with effective and efficient designs and corresponding patterning processes
US20100294352A1 (en) * 2009-05-20 2010-11-25 Uma Srinivasan Metal patterning for electrically conductive structures based on alloy formation
US8247243B2 (en) * 2009-05-22 2012-08-21 Nanosolar, Inc. Solar cell interconnection
US8704083B2 (en) 2010-02-11 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and fabrication method thereof
US9059347B2 (en) * 2010-06-18 2015-06-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
WO2012030701A2 (en) * 2010-08-30 2012-03-08 First Solar, Inc. Photovoltaic device interconnect
US8912083B2 (en) 2011-01-31 2014-12-16 Nanogram Corporation Silicon substrates with doped surface contacts formed from doped silicon inks and corresponding processes
EP2555243A1 (en) * 2011-08-03 2013-02-06 STMicroelectronics S.r.l. A thin film solar cell module including series-connected cells formed on a flexible substrate by using lithography
JP6069959B2 (ja) * 2012-08-30 2017-02-01 三菱化学株式会社 有機薄膜太陽電池素子の製造方法
US11074025B2 (en) 2012-09-03 2021-07-27 Semiconductor Energy Laboratory Co., Ltd. Display device and method for manufacturing the same
WO2015019971A1 (en) 2013-08-06 2015-02-12 Semiconductor Energy Laboratory Co., Ltd. Peeling method
TW201943069A (zh) 2013-09-06 2019-11-01 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
US9937698B2 (en) 2013-11-06 2018-04-10 Semiconductor Energy Laboratory Co., Ltd. Peeling method and light-emitting device
WO2015125046A1 (en) 2014-02-19 2015-08-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and peeling method
TWI679560B (zh) 2014-03-13 2019-12-11 日商半導體能源研究所股份有限公司 觸控面板
DE112015001780B4 (de) 2014-04-11 2022-02-03 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung
JP6822858B2 (ja) 2016-01-26 2021-01-27 株式会社半導体エネルギー研究所 剥離の起点の形成方法及び剥離方法
US20210103084A1 (en) * 2019-10-03 2021-04-08 American Polarizers, Inc. Multi-Axis Polarizer Film For Anti-Counterfeit Applications And Method Of Making The Same
CN117203690A (zh) 2021-05-07 2023-12-08 株式会社半导体能源研究所 显示装置

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TW387152B (en) 1996-07-24 2000-04-11 Tdk Corp Solar battery and manufacturing method thereof
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AU766727B2 (en) * 1999-06-14 2003-10-23 Kaneka Corporation Method of fabricating thin-film photovoltaic module
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Also Published As

Publication number Publication date
JP2002353473A (ja) 2002-12-06
US7365004B2 (en) 2008-04-29
US6846696B2 (en) 2005-01-25
US20030017641A1 (en) 2003-01-23
US20050186725A1 (en) 2005-08-25

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