JP4300168B2 - 集束イオンビーム装置、及びそれに用いる絞り - Google Patents

集束イオンビーム装置、及びそれに用いる絞り Download PDF

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Publication number
JP4300168B2
JP4300168B2 JP2004263201A JP2004263201A JP4300168B2 JP 4300168 B2 JP4300168 B2 JP 4300168B2 JP 2004263201 A JP2004263201 A JP 2004263201A JP 2004263201 A JP2004263201 A JP 2004263201A JP 4300168 B2 JP4300168 B2 JP 4300168B2
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Japan
Prior art keywords
liquid metal
diaphragm
ion beam
ion source
focused ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2004263201A
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English (en)
Japanese (ja)
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JP2006079952A (ja
JP2006079952A5 (cg-RX-API-DMAC7.html
Inventor
祐一 間所
茂 伊沢
馨 梅村
広康 加賀
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Hitachi High Technologies Corp filed Critical Hitachi High Technologies Corp
Priority to JP2004263201A priority Critical patent/JP4300168B2/ja
Priority to US11/205,086 priority patent/US7189982B2/en
Publication of JP2006079952A publication Critical patent/JP2006079952A/ja
Publication of JP2006079952A5 publication Critical patent/JP2006079952A5/ja
Priority to US11/714,235 priority patent/US7435972B2/en
Application granted granted Critical
Publication of JP4300168B2 publication Critical patent/JP4300168B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0802—Field ionization sources
    • H01J2237/0805—Liquid metal sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3109—Cutting

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2004263201A 2004-09-10 2004-09-10 集束イオンビーム装置、及びそれに用いる絞り Expired - Fee Related JP4300168B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004263201A JP4300168B2 (ja) 2004-09-10 2004-09-10 集束イオンビーム装置、及びそれに用いる絞り
US11/205,086 US7189982B2 (en) 2004-09-10 2005-08-17 Focused ion beam apparatus and aperture
US11/714,235 US7435972B2 (en) 2004-09-10 2007-03-06 Focused ion beam apparatus and liquid metal ion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004263201A JP4300168B2 (ja) 2004-09-10 2004-09-10 集束イオンビーム装置、及びそれに用いる絞り

Publications (3)

Publication Number Publication Date
JP2006079952A JP2006079952A (ja) 2006-03-23
JP2006079952A5 JP2006079952A5 (cg-RX-API-DMAC7.html) 2006-09-07
JP4300168B2 true JP4300168B2 (ja) 2009-07-22

Family

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Family Applications (1)

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JP2004263201A Expired - Fee Related JP4300168B2 (ja) 2004-09-10 2004-09-10 集束イオンビーム装置、及びそれに用いる絞り

Country Status (2)

Country Link
US (2) US7189982B2 (cg-RX-API-DMAC7.html)
JP (1) JP4300168B2 (cg-RX-API-DMAC7.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4359131B2 (ja) * 2003-12-08 2009-11-04 株式会社日立ハイテクノロジーズ 液体金属イオン銃、及びイオンビーム装置
JP4300168B2 (ja) * 2004-09-10 2009-07-22 株式会社日立ハイテクノロジーズ 集束イオンビーム装置、及びそれに用いる絞り
US7667209B2 (en) * 2006-07-06 2010-02-23 Hitachi High-Technologies Corporation Focused ION beam apparatus
JP2009048877A (ja) * 2007-08-21 2009-03-05 Nec Electronics Corp イオン注入装置
JP5390330B2 (ja) * 2008-10-16 2014-01-15 キヤノンアネルバ株式会社 基板処理装置およびそのクリーニング方法
JP5230534B2 (ja) * 2009-05-29 2013-07-10 株式会社日立ハイテクノロジーズ 液体金属イオン銃
DE102009048397A1 (de) * 2009-10-06 2011-04-07 Plasmatreat Gmbh Atmosphärendruckplasmaverfahren zur Herstellung oberflächenmodifizierter Partikel und von Beschichtungen
JP6025378B2 (ja) * 2012-04-20 2016-11-16 キヤノン株式会社 電子顕微鏡および試料の観察方法
US11170967B2 (en) * 2019-03-22 2021-11-09 Axcelis Technologies, Inc. Liquid metal ion source
US20240249908A1 (en) * 2023-01-25 2024-07-25 Applied Materials, Inc. Dose Cup Assembly for an Ion Implanter

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE33193E (en) * 1981-09-30 1990-04-03 Hitachi, Ltd. Ion beam processing apparatus and method of correcting mask defects
JPS59168652A (ja) * 1983-03-16 1984-09-22 Hitachi Ltd 素子修正方法及びその装置
US4900695A (en) * 1986-12-17 1990-02-13 Hitachi, Ltd. Semiconductor integrated circuit device and process for producing the same
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
JP2807719B2 (ja) * 1990-04-04 1998-10-08 セイコーインスツルメンツ株式会社 集束イオンビーム装置の液体金属イオン源の動作方法
JP3190395B2 (ja) 1991-12-10 2001-07-23 株式会社日立製作所 イオンビーム部材および集束イオンビーム装置
US5369279A (en) * 1992-06-04 1994-11-29 Martin; Frederick W. Chromatically compensated particle-beam column
JPH11274255A (ja) * 1998-03-19 1999-10-08 Seiko Instruments Inc 断面加工観察方法
US6414307B1 (en) * 1999-07-09 2002-07-02 Fei Company Method and apparatus for enhancing yield of secondary ions
JP2001160369A (ja) 1999-12-03 2001-06-12 Seiko Instruments Inc 集束イオンビーム装置のレンズ保護用絞り
KR100984608B1 (ko) * 2003-09-23 2010-09-30 지벡스 인스투르먼츠, 엘엘시 집속 이온빔으로 준비한 샘플을 파지하는 파지 요소를 사용한 현미경 검사 방법, 시스템 및 장치
JP4359131B2 (ja) * 2003-12-08 2009-11-04 株式会社日立ハイテクノロジーズ 液体金属イオン銃、及びイオンビーム装置
JP4300168B2 (ja) * 2004-09-10 2009-07-22 株式会社日立ハイテクノロジーズ 集束イオンビーム装置、及びそれに用いる絞り

Also Published As

Publication number Publication date
US20070152174A1 (en) 2007-07-05
JP2006079952A (ja) 2006-03-23
US20060054840A1 (en) 2006-03-16
US7189982B2 (en) 2007-03-13
US7435972B2 (en) 2008-10-14

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