JP4287344B2 - 染料感応太陽電池 - Google Patents
染料感応太陽電池 Download PDFInfo
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- JP4287344B2 JP4287344B2 JP2004273795A JP2004273795A JP4287344B2 JP 4287344 B2 JP4287344 B2 JP 4287344B2 JP 2004273795 A JP2004273795 A JP 2004273795A JP 2004273795 A JP2004273795 A JP 2004273795A JP 4287344 B2 JP4287344 B2 JP 4287344B2
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- oxide
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- porous film
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- 239000002245 particle Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 17
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 16
- -1 WO 3 Inorganic materials 0.000 claims description 14
- 239000003792 electrolyte Substances 0.000 claims description 12
- 239000004642 Polyimide Substances 0.000 claims description 11
- 239000004743 Polypropylene Substances 0.000 claims description 11
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 11
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 11
- 229920001721 polyimide Polymers 0.000 claims description 11
- 229920001155 polypropylene Polymers 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 10
- 229920000515 polycarbonate Polymers 0.000 claims description 7
- 239000004417 polycarbonate Substances 0.000 claims description 7
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 6
- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 6
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 6
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 5
- 239000001913 cellulose Substances 0.000 claims description 5
- 229920002678 cellulose Polymers 0.000 claims description 5
- 239000010419 fine particle Substances 0.000 claims description 5
- ZULTVNRFZRQYKL-UHFFFAOYSA-M fluorotin Chemical compound [Sn]F ZULTVNRFZRQYKL-UHFFFAOYSA-M 0.000 claims description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- 230000003746 surface roughness Effects 0.000 claims description 5
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 5
- ILJSQTXMGCGYMG-UHFFFAOYSA-N triacetic acid Chemical compound CC(=O)CC(=O)CC(O)=O ILJSQTXMGCGYMG-UHFFFAOYSA-N 0.000 claims description 5
- 238000005868 electrolysis reaction Methods 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- LVWZTYCIRDMTEY-UHFFFAOYSA-N metamizole Chemical compound O=C1C(N(CS(O)(=O)=O)C)=C(C)N(C)N1C1=CC=CC=C1 LVWZTYCIRDMTEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 229920002554 vinyl polymer Polymers 0.000 claims description 3
- 239000000975 dye Substances 0.000 description 23
- 238000006243 chemical reaction Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 3
- AUNGANRZJHBGPY-SCRDCRAPSA-N Riboflavin Chemical compound OC[C@@H](O)[C@@H](O)[C@@H](O)CN1C=2C=C(C)C(C)=CC=2N=C2C1=NC(=O)NC2=O AUNGANRZJHBGPY-SCRDCRAPSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000012860 organic pigment Substances 0.000 description 2
- 239000005518 polymer electrolyte Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
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- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 description 1
- GJCOSYZMQJWQCA-UHFFFAOYSA-N 9H-xanthene Chemical compound C1=CC=C2CC3=CC=CC=C3OC2=C1 GJCOSYZMQJWQCA-UHFFFAOYSA-N 0.000 description 1
- AUNGANRZJHBGPY-UHFFFAOYSA-N D-Lyxoflavin Natural products OCC(O)C(O)C(O)CN1C=2C=C(C)C(C)=CC=2N=C2C1=NC(=O)NC2=O AUNGANRZJHBGPY-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229920003182 Surlyn® Polymers 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 125000003754 ethoxycarbonyl group Chemical group C(=O)(OCC)* 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- HCDGVLDPFQMKDK-UHFFFAOYSA-N hexafluoropropylene Chemical group FC(F)=C(F)C(F)(F)F HCDGVLDPFQMKDK-UHFFFAOYSA-N 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- QDLAGTHXVHQKRE-UHFFFAOYSA-N lichenxanthone Natural products COC1=CC(O)=C2C(=O)C3=C(C)C=C(OC)C=C3OC2=C1 QDLAGTHXVHQKRE-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000029553 photosynthesis Effects 0.000 description 1
- 238000010672 photosynthesis Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229960002477 riboflavin Drugs 0.000 description 1
- 235000019192 riboflavin Nutrition 0.000 description 1
- 239000002151 riboflavin Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- WRTMQOHKMFDUKX-UHFFFAOYSA-N triiodide Chemical compound I[I-]I WRTMQOHKMFDUKX-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Description
11 基板
12 電導性フィルム
20 第2電極
21 基板
22 第1電導性フィルム
23 第2電導性フィルム
30 バッファー層
40 多孔質膜
50 染料
60 電解質
70 反射防止膜
80a、80b 接着剤
Claims (17)
- 互いに対向配置される第1電極及び第2電極と、
前記第1電極の一面に形成されるバッファー層と、
前記第1電極の他の一面に形成される反射防止膜と、
前記バッファー層上に形成される多孔質膜と、
前記多孔質膜に吸着された染料と、
前記第1電極と第2電極との間の空間に充填された電解質と、
を含む染料感応太陽電池。 - 前記バッファー層のエネルギー準位が前記第1電極のエネルギー準位以上で、前記多孔質膜のエネルギー準位以下である、請求項1に記載の染料感応太陽電池。
- 前記多孔質膜がTiO2からなり、前記バッファー層がTiO2、WO3、及びTiO2-WO3のうちの一つからなる、請求項2に記載の染料感応太陽電池。
- 前記バッファー層が蒸着、電気分解、湿式法のうちのいずれか一つの方法によって形成されたものである、請求項1に記載の染料感応太陽電池。
- 前記バッファー層が前記多孔質膜よりさらに緻密な構造を有する、請求項1に記載の染料感応太陽電池。
- 前記多孔質膜がナノメートル単位の粒径を有する遷移金属酸化物粒子からなる、請求項1に記載の染料感応太陽電池。
- 前記多孔質膜がTi酸化物、Zr酸化物、Sr酸化物、Zn酸化物、Ir酸化物、La酸化物、V酸化物、Mo酸化物、W酸化物、Sn酸化物、Nb酸化物、Mg酸化物、Al酸化物、Y酸化物、Sc酸化物、Sm酸化物、Ga酸化物、In酸化物及びSrTi酸化物のうちのいずれか一つまたはこれらの組み合わせからなる、請求項1に記載の染料感応太陽電池。
- 前記多孔質膜が前記多孔質膜構成酸化物と同一物質を含む光散乱子を含む、請求項7に記載の染料感応太陽電池。
- 前記光散乱子の平均粒径が100nm以上の範囲に属する、請求項8に記載の染料感応太陽電池。
- 前記多孔質膜が導電性微粒子を含む、請求項1に記載の染料感応太陽電池。
- 前記多孔質膜がポリエチレングリコール(PEG)、ポリエチレンオキシド(PEO)、ポリビニルアルコール(PVA)、ポリビニルピリドン(PVP)のうちのいずれか一つの高分子を含む、請求項1に記載の染料感応太陽電池。
- 前記多孔質膜の粒子の平均粒径が100nm以下の範囲に属する、請求項6に記載の染料感応太陽電池。
- 前記多孔質膜の粒子の平均粒径が10〜40nmの範囲に属する、請求項12に記載の染料感応太陽電池。
- 前記多孔質膜が20以上の表面粗度を有する、請求項1に記載の染料感応太陽電池。
- 前記染料がRu錯体を含む、請求項1に記載の染料感応太陽電池。
- 前記第1電極がポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)、ポリカーボネート(PC)、ポリプロピレン(PP)、ポリイミド(PI)、トリアセテートセルロース(TAC)のうちのいずれか一つを含む透明な基板と、前記基板にコーティングされ、インジウムスズ酸化物(ITO)、フルオロティン酸化物(FTO)、ZnO-Ga2O3、ZnO-Al2O3、SnO2-Sb2O3のうちのいずれか一つを含む電導性フィルムを含む、請求項1に記載の染料感応太陽電池。
- 前記第2電極がポリエチレンテレフタレート(PET)、ポリエチレンナフタレート(PEN)、ポリカーボネート(PC)、ポリプロピレン(PP)、ポリイミド(PI)、トリアセテートセルロース(TAC)のうちのいずれか一つを含む透明な基板と、前記基板にコーティングされ、インジウムスズ酸化物(ITO)、フルオロティン酸化物(FTO)、ZnO-Ga2O3、ZnO-Al2O3、SnO2-Sb2O3のうちのいずれか一つを含む第1電導性フィルム、そして前記第1電導性フィルム上にコーティングされ、Ptまたは貴金属物質を含む第2電導性フィルムを含む、請求項1に記載の染料感応太陽電池。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030066886A KR101056440B1 (ko) | 2003-09-26 | 2003-09-26 | 염료감응 태양전지 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005108836A JP2005108836A (ja) | 2005-04-21 |
JP4287344B2 true JP4287344B2 (ja) | 2009-07-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004273795A Expired - Fee Related JP4287344B2 (ja) | 2003-09-26 | 2004-09-21 | 染料感応太陽電池 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20050067009A1 (ja) |
EP (1) | EP1523019A3 (ja) |
JP (1) | JP4287344B2 (ja) |
KR (1) | KR101056440B1 (ja) |
Families Citing this family (30)
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JP4937560B2 (ja) * | 2004-12-22 | 2012-05-23 | 株式会社フジクラ | 光電変換素子用の対極及び光電変換素子 |
KR100729854B1 (ko) * | 2005-06-14 | 2007-06-18 | 한국전기연구원 | 교육용 인공광합성 태양전지의 구조 및 그의 조립방법 |
JP4523549B2 (ja) | 2006-01-18 | 2010-08-11 | シャープ株式会社 | 色素増感太陽電池および色素増感太陽電池モジュール |
US8039834B2 (en) | 2006-06-13 | 2011-10-18 | Georgia Tech Research Corporation | Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts |
KR100829064B1 (ko) * | 2006-12-19 | 2008-05-19 | 연세대학교 산학협력단 | 방향성을 갖는 랜덤 레이징 나노 다공성 막 및 그의 제조방법 |
US8022601B2 (en) | 2008-03-17 | 2011-09-20 | Georgia Tech Research Corporation | Piezoelectric-coated carbon nanotube generators |
KR100977831B1 (ko) | 2008-05-16 | 2010-08-25 | 서울시립대학교 산학협력단 | 염료감응 태양전지 및 이의 제조방법 |
KR100890650B1 (ko) * | 2008-05-27 | 2009-03-27 | 아크로솔 주식회사 | 발광타일 |
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KR100997843B1 (ko) | 2008-08-29 | 2010-12-01 | 주식회사 솔켐 | 전기방사법에 의해 제조된 고분자 전해질을 포함한 염료감응형 태양전지 소자 및 이의 제조방법 |
WO2010050575A1 (ja) | 2008-10-29 | 2010-05-06 | 富士フイルム株式会社 | 色素、これを用いた光電変換素子、光電気化学電池、および色素の製造方法 |
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EP2228809A1 (en) * | 2009-03-12 | 2010-09-15 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Electronic device and method of manufacturing the same |
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JP5620081B2 (ja) | 2009-09-28 | 2014-11-05 | 富士フイルム株式会社 | 光電変換素子の製造方法 |
JP5524557B2 (ja) | 2009-09-28 | 2014-06-18 | 富士フイルム株式会社 | 光電変換素子の製造方法、光電変換素子、および光電気化学電池 |
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KR101373503B1 (ko) | 2009-12-18 | 2014-03-14 | 엘지디스플레이 주식회사 | 염료 감응 태양전지 모듈 및 이의 제조방법 |
US20130284257A1 (en) * | 2010-08-19 | 2013-10-31 | Lehigh University | Microlens array for solar cells |
KR101325646B1 (ko) | 2010-09-16 | 2013-11-20 | 한국전자통신연구원 | 태양전지 및 그 형성방법 |
KR101125407B1 (ko) * | 2011-01-24 | 2012-03-27 | 엘지이노텍 주식회사 | 태양전지 및 그의 제조방법 |
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2003
- 2003-09-26 KR KR1020030066886A patent/KR101056440B1/ko not_active IP Right Cessation
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2004
- 2004-09-21 JP JP2004273795A patent/JP4287344B2/ja not_active Expired - Fee Related
- 2004-09-23 EP EP20040090374 patent/EP1523019A3/en not_active Withdrawn
- 2004-09-24 US US10/948,925 patent/US20050067009A1/en not_active Abandoned
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EP1523019A2 (en) | 2005-04-13 |
EP1523019A3 (en) | 2005-04-20 |
JP2005108836A (ja) | 2005-04-21 |
US20050067009A1 (en) | 2005-03-31 |
KR101056440B1 (ko) | 2011-08-11 |
KR20050030759A (ko) | 2005-03-31 |
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