JP4323457B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2022—Light-sensitive devices characterized by he counter electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
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- H—ELECTRICITY
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
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Description
第1電極10のITOからなる伝導性フィルム12上にRFマグネトロンスパッタリング装備を利用し、10nm厚さの緻密なW酸化物の第1層51を蒸着した。蒸着条件は、W酸化物をスパッタリングターゲットとして、100W、Ar雰囲気、10mTorrの作業圧力下で常温蒸着した。
第1電極10の伝導性フィルム12上に実施例2と同じ過程でRFマグネトロンスパッタリング装備を利用し、10nm厚さの稠密なW酸化物第1層51を蒸着した後、第1層51上にTi酸化物粒子分散液を利用して多孔質膜30を形成し、この後、実施例1と同じ過程を経て太陽電池を製作した。
第1電極10の伝導性フィルムI2上にTi酸化物粒子分散液を利用して多孔質膜30を形成し、この後実施例1と同じ過程を経て太陽電池を製作した。
11,21 ガラス基板
12 伝導性フィルム
22,23 第1及び第2伝導性フィルム
30 多孔質膜
40 電解質
50 緩衝層
51,52 第1及び第2層
60 支持台
Claims (32)
- 互いに対向した第1及び第2電極と、
前記第1及び第2電極間に介在され、色素が吸着されている多孔質膜と、
前記第1及び第2電極間に介在された電解質と、
前記第1電極及び多孔質膜間に介在され、少なくとも二つの層を備えた緩衝層と、を含むことを特徴とする太陽電池。 - 前記多孔質膜は、遷移属酸化物のナノ粒子を備えたことを特徴とする請求項1に記載の太陽電池。
- 前記多孔質膜は、Ti酸化物、Zr酸化物、Sr酸化物、Zn酸化物、In酸化物、Yr酸化物、La酸化物、V酸化物、Mo酸化物、W酸化物、Sn酸化物、Nb酸化物、Mg酸化物、Al酸化物、Y酸化物、Sc酸化物、Sm酸化物、Ga酸化物、In酸化物、及びSrTi酸化物のうち、一つまたは二つ以上の複合物を備えたことを特徴とする請求項1に記載の太陽電池。
- 前記ナノ粒子の平均粒径は、100nm以下であることを特徴とする請求項2に記載の太陽電池。
- 前記ナノ粒子の平均粒径は、10−40nmであることを特徴とする請求項4に記載の太陽電池。
- 前記多孔質膜は、電子移動を容易にする導電性微粒子と、前記多孔質膜をなす物質と同じ物質により形成され、光路を延長させて太陽光の吸収を増加させる光散乱子と、を備え、前記導電性微粒子と前記光散乱子のうち少なくとも一つが添加されたことを特徴とする請求項1に記載の太陽電池。
- 前記緩衝層は、
前記多孔質膜の伝導帯エネルギー準位以下の伝導帯エネルギー準位を有する第1層と、
前記第1層と前記多孔質膜との間に介在され、前記第1層の伝導帯エネルギー準位以上の伝導帯エネルギー準位を有する第2層とを含むことを特徴とする請求項1に記載の太陽電池。 - 前記第1層は、前記多孔質膜よりさらに緻密な組織を有することを特徴とする請求項7に記載の太陽電池。
- 前記第2層は、前記多孔質膜よりさらに緻密な組織を有することを特徴とする請求項7に記載の太陽電池。
- 前記第1層は、W酸化物、In酸化物、Sn酸化物、Zn酸化物、SrTi酸化物、FeTi酸化物、MnTi酸化物、BaTi酸化物、及びそれらの混合物のうち、少なくとも一つを含むことを特徴とする請求項7に記載の太陽電池。
- 前記第2層は、Ti酸化物、W酸化物、In酸化物、Sn酸化物、Zn酸化物、SrTi酸化物、FeTi酸化物、MnTi酸化物、BaTi酸化物、及びそれらの混合物のうち、少なくとも一つを含むことを特徴とする請求項10に記載の太陽電池。
- 前記第1電極は、InSn酸化物、In酸化物、Sn酸化物、Zn酸化物、S酸化物、F酸化物、及びそれらの混合物のうち、少なくとも一つを含むことを特徴とする請求項1に記載の太陽電池。
- 前記第2電極は、InSn酸化物、In酸化物、Sn酸化物、Zn酸化物、S酸化物、F酸化物、及びそれらの混合物のうち、少なくとも一つを含むことを特徴とする請求項1に記載の太陽電池。
- 前記第2電極は、Ptまたは貴金属物質を含むことを特徴とする請求項13に記載の太陽電池。
- 前記色素は、前記ナノ粒子の表面に吸着されていることを特徴とする請求項2に記載の太陽電池。
- 前記色素は、Ru複合体を含んで可視光を吸収できる物質を含むことを特徴とする請求項1に記載の太陽電池。
- 第1及び第2電極を準備する段階と、
前記第1電極の一面上に少なくとも二つの層を備えた緩衝層を形成する段階と、
前記緩衝層上に多孔質膜を形成する段階と、
前記多孔質膜に色素を吸着させる段階と、
前記多孔質膜上に前記第2電極を配置させ、前記多孔質膜及び第2電極間に電解質を埋め込むように、前記第1及び第2電極を密封する段階と、を含むことを特徴とする太陽電池の製造方法。 - 前記緩衝層を形成する段階は、
前記第1電極の一面上に前記多孔質膜の伝導帯エネルギー準位以下の伝導帯エネルギー準位を有する第1層を形成する段階と、
前記第1層の一面上に前記第1層の伝導帯エネルギー準位以上の伝導帯エネルギー準位を有する第2層を形成する段階と、を含むことを特徴とする請求項17に記載の太陽電池の製造方法。 - 前記第1層は、前記多孔質膜よりさらに緻密な組織を有するように形成することを特徴とする請求項18に記載の太陽電池の製造方法。
- 前記第2層は、前記多孔質膜よりさらに緻密な組織を有するように形成することを特徴とする請求項18に記載の太陽電池の製造方法。
- 前記第1層は、W酸化物、In酸化物、Sn酸化物、Zn酸化物、SrTi酸化物、FeTi酸化物、MnTi酸化物、BaTi酸化物、及びそれらの混合物のうち、少なくとも一つを含むことを特徴とする請求項18に記載の太陽電池の製造方法。
- 前記第2層は、Ti酸化物、W酸化物、In酸化物、Sn酸化物、Zn酸化物、SrTi酸化物、FeTi酸化物、MnTi酸化物、BaTi酸化物、及びそれらの混合物のうち、少なくとも一つを含むことを特徴とする請求項21に記載の太陽電池の製造方法。
- 前記緩衝層を形成する段階は、スパッタリング、化学気相蒸着、蒸気蒸着、熱酸化、電気化学的蒸着のうち、いずれか一つの方法によることを特徴とする請求項17に記載の太陽電池の製造方法。
- 前記緩衝層を形成する段階は、スパッタリング方法により常温ないし400℃の温度で1ないし400nmの厚さに蒸着することを特徴とする請求項17に記載の太陽電池の製造方法。
- 前記多孔質膜を形成する段階は、前記多孔質膜を遷移属酸化物のナノ粒子で形成する段階であることを特徴とする請求項17に記載の太陽電池の製造方法。
- 前記多孔質膜を形成する段階は、前記多孔質膜を構成する粒子の分散液を塗布した後で乾燥させることを特徴とする請求項17に記載の太陽電池の製造方法。
- 前記多孔質膜は、Ti酸化物、Zr酸化物、Sr酸化物、Zn酸化物、In酸化物、Yr酸化物、La酸化物、V酸化物、Mo酸化物、W酸化物、Sn酸化物、Nb酸化物、Mg酸化物、Al酸化物、Y酸化物、Sc酸化物、Sm酸化物、Ga酸化物、In酸化物、及びSrTi酸化物のうち、一つまたは二つ以上の複合物を備えたことを特徴とする請求項17に記載の太陽電池の製造方法。
- 前記多孔質膜を形成する段階は、前記分散液に電子移動を容易にする導電性微粒子を添加するか、または平均粒径が150nm以上の前記多孔質膜と同じ物質であって光路を延長させて太陽光の吸収を増加させる光散乱子を添加するか、または導電性微粒子及び光散乱子のいずれをも添加する段階がさらに含まれることを特徴とする請求項26に記載の太陽電池の製造方法。
- 前記色素を吸着させる段階は、前記色素を前記ナノ粒子の表面に吸着させることを特徴とする請求項25に記載の太陽電池の製造方法。
- 前記色素を吸着させる段階は、前記色素にRu複合体を含んで可視光を吸収できる物質を含む段階を含むことを特徴とする請求項17に記載の太陽電池の製造方法。
- 前記第1電極を準備する段階は、PET、PEN、PC、PP、PI、TACのうち、いずれか一つを含む透明なプラスチック基板またはガラス基板上に、InSn酸化物、In酸化物、Sn酸化物、Zn酸化物、S酸化物、F酸化物、及びそれらの混合物のうち、少なくとも一つを含む伝導性フィルムをコーティングすることを特徴とする請求項17に記載の太陽電池の製造方法。
- 前記第2電極を準備する段階は、PET、PEN、PC、PP、PI、TACのうち、いずれか一つを含む透明なプラスチック基板またはガラス基板上に、InSn酸化物、In酸化物、Sn酸化物、Zn酸化物、S酸化物、F酸化物、及びそれらの混合物のうち、少なくとも一つを含む第1伝導性フィルムをコーティングし、前記第1伝導性フィルム上にPtまたは貴金属物質を含んだ第2伝導性フィルムをコーティングすることを特徴とする請求項17に記載の太陽電池の製造方法。
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