JP4253486B2 - ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法 - Google Patents
ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法 Download PDFInfo
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- JP4253486B2 JP4253486B2 JP2002279273A JP2002279273A JP4253486B2 JP 4253486 B2 JP4253486 B2 JP 4253486B2 JP 2002279273 A JP2002279273 A JP 2002279273A JP 2002279273 A JP2002279273 A JP 2002279273A JP 4253486 B2 JP4253486 B2 JP 4253486B2
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- 0 C*C(C(C)(*)N(*)C(C)C)=O Chemical compound C*C(C(C)(*)N(*)C(C)C)=O 0.000 description 4
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/122—Sulfur compound containing
- Y10S430/123—Sulfur in heterocyclic ring
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/124—Carbonyl compound containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/128—Radiation-activated cross-linking agent containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002279273A JP4253486B2 (ja) | 2002-09-25 | 2002-09-25 | ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法 |
| KR1020030065761A KR100955663B1 (ko) | 2002-09-25 | 2003-09-23 | 감광성 조성물 및 산발생제 |
| US10/668,348 US7033727B2 (en) | 2002-09-25 | 2003-09-24 | Photosensitive composition and acid generator |
| EP03021631A EP1406122B1 (en) | 2002-09-25 | 2003-09-25 | Photosensitive composition and acid generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002279273A JP4253486B2 (ja) | 2002-09-25 | 2002-09-25 | ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004117688A JP2004117688A (ja) | 2004-04-15 |
| JP2004117688A5 JP2004117688A5 (OSRAM) | 2005-09-22 |
| JP4253486B2 true JP4253486B2 (ja) | 2009-04-15 |
Family
ID=31987088
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002279273A Expired - Fee Related JP4253486B2 (ja) | 2002-09-25 | 2002-09-25 | ポジ型又はネガ型レジスト組成物、酸発生剤及びパターン形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7033727B2 (OSRAM) |
| EP (1) | EP1406122B1 (OSRAM) |
| JP (1) | JP4253486B2 (OSRAM) |
| KR (1) | KR100955663B1 (OSRAM) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4226842B2 (ja) * | 2002-05-01 | 2009-02-18 | 信越化学工業株式会社 | 光酸発生剤、化学増幅レジスト材料及びパターン形成方法 |
| KR100580621B1 (ko) * | 2003-03-07 | 2006-05-16 | 삼성전자주식회사 | 전도성 화합물, 이를 포함하는 전극 및 센서, 상기 센서를이용한 표적 물질 검출방법 |
| JP4271968B2 (ja) * | 2003-03-13 | 2009-06-03 | 富士フイルム株式会社 | ポジ型又はネガ型レジスト組成物及び化合物 |
| JP2005035920A (ja) * | 2003-07-14 | 2005-02-10 | Daicel Chem Ind Ltd | 重合性アダマンタン誘導体とその製造法、及び高分子化合物 |
| EP1505439A3 (en) | 2003-07-24 | 2005-04-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition and method of forming resist pattern |
| US20050058933A1 (en) * | 2003-09-17 | 2005-03-17 | Meagley Robert P. | Quantum efficient photoacid generators for photolithographic processes |
| KR100680405B1 (ko) * | 2003-11-19 | 2007-02-08 | 주식회사 하이닉스반도체 | Euv용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법 |
| JP4448730B2 (ja) | 2004-04-20 | 2010-04-14 | 富士フイルム株式会社 | 感光性組成物、該感光性組成物に用いられる化合物及び該感光性組成物を用いたパターン形成方法 |
| KR20050115172A (ko) * | 2004-06-03 | 2005-12-07 | 주식회사 동진쎄미켐 | 감광성 고분자 수지 및 이를 포함하는 화학증폭형포토레지스트 조성물 |
| US7241560B2 (en) * | 2004-06-30 | 2007-07-10 | Intel Corporation | Basic quencher/developer solutions for photoresists |
| US20060003271A1 (en) * | 2004-06-30 | 2006-01-05 | Clark Shan C | Basic supercritical solutions for quenching and developing photoresists |
| US7816072B2 (en) * | 2005-05-02 | 2010-10-19 | Tokyo Ohka Kogyo Co., Ltd. | Positive resist composition and method for forming resist pattern |
| US7901867B2 (en) * | 2005-07-01 | 2011-03-08 | Basf Se | Sulphonium salt initiators |
| JP4732046B2 (ja) * | 2005-07-20 | 2011-07-27 | 東京応化工業株式会社 | レジスト組成物およびレジストパターン形成方法 |
| JP4580841B2 (ja) * | 2005-08-16 | 2010-11-17 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| JP5039622B2 (ja) * | 2007-03-30 | 2012-10-03 | 富士フイルム株式会社 | ポジ型レジスト組成物及びこれを用いたパターン形成方法 |
| WO2009152276A2 (en) * | 2008-06-10 | 2009-12-17 | University Of North Carolina At Charlotte | Photoacid generators and lithographic resists comprising the same |
| JP5377172B2 (ja) * | 2009-03-31 | 2013-12-25 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物及びそれを用いたパターン形成方法 |
| JP5917150B2 (ja) * | 2009-11-27 | 2016-05-11 | Jsr株式会社 | ポジ型感放射線性組成物、硬化膜及びその形成方法 |
| JP5677127B2 (ja) * | 2011-02-18 | 2015-02-25 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法 |
| JP5743622B2 (ja) * | 2011-03-16 | 2015-07-01 | 東京応化工業株式会社 | レジスト組成物、レジストパターン形成方法 |
| CN103874731B (zh) | 2011-09-07 | 2017-02-15 | 微量化学公司 | 用于在低表面能基底上制造浮雕图案的环氧制剂和方法 |
| JP5775856B2 (ja) * | 2011-11-07 | 2015-09-09 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、並びにそれを用いた感活性光線性又は感放射線性膜及びパターン形成方法 |
| KR20130076364A (ko) * | 2011-12-28 | 2013-07-08 | 금호석유화학 주식회사 | 레지스트용 첨가제 및 이를 포함하는 레지스트 조성물 |
| KR101704474B1 (ko) * | 2011-12-28 | 2017-02-09 | 금호석유화학 주식회사 | 레지스트용 첨가제 및 이를 포함하는 레지스트 조성물 |
| US11635688B2 (en) * | 2012-03-08 | 2023-04-25 | Kayaku Advanced Materials, Inc. | Photoimageable compositions and processes for fabrication of relief patterns on low surface energy substrates |
| JP6019677B2 (ja) * | 2012-04-02 | 2016-11-02 | Jsr株式会社 | フォトレジスト組成物及びレジストパターン形成方法 |
| JP6014507B2 (ja) | 2013-02-05 | 2016-10-25 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法及び電子デバイスの製造方法 |
| JP6571177B2 (ja) * | 2015-05-14 | 2019-09-04 | 富士フイルム株式会社 | パターン形成方法、電子デバイスの製造方法、及び、感活性光線性又は感放射線性樹脂組成物 |
| JP7066573B2 (ja) * | 2017-09-15 | 2022-05-13 | 住友化学株式会社 | 塩、レジスト組成物及びレジストパターンの製造方法 |
| WO2020234222A1 (en) * | 2019-05-20 | 2020-11-26 | Merck Patent Gmbh | A negative tone lift off resist composition comprising an alkali soluble resin and a photo acid generator, and a method for manufacturing metal film patterns on a substrate. |
| JP2024010326A (ja) * | 2022-07-12 | 2024-01-24 | 富士フイルム株式会社 | スルホニウム塩化合物の製造方法 |
| KR20250159151A (ko) * | 2023-02-28 | 2025-11-10 | 니폰 제온 가부시키가이샤 | 공중합체, 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3679205B2 (ja) * | 1996-09-20 | 2005-08-03 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
| JP2964990B2 (ja) | 1997-05-07 | 1999-10-18 | 日本電気株式会社 | 橋かけ環式アルキル基を有する光酸発生剤を含有する感光性樹脂組成物、およびそれを用いたパターン形成方法 |
| US6384169B1 (en) * | 1997-10-08 | 2002-05-07 | Shin-Etsu Chemical Co., Ltd. | Styrene polymer, chemically amplified positive resist composition and patterning process |
| JP2965016B2 (ja) | 1997-11-04 | 1999-10-18 | 日本電気株式会社 | 遠紫外線露光用感光性樹脂組成物、及びそれを用いたパターン形成方法 |
| KR20000023292A (ko) * | 1998-09-22 | 2000-04-25 | 카나가와 치히로 | 레지스트 재료 및 패턴 형성 방법 |
| US6031014A (en) | 1998-12-08 | 2000-02-29 | Crivello; James V. | Initiator compositions and methods for their synthesis and use |
| JP3351424B2 (ja) | 1999-12-28 | 2002-11-25 | 日本電気株式会社 | スルホニウム塩化合物及びレジスト組成物、並びにそれを用いたパターン形成方法 |
| JP2001215734A (ja) * | 2000-02-04 | 2001-08-10 | Tokyo Ohka Kogyo Co Ltd | レジストパターンの表面欠陥減少方法及びそれに用いる表面欠陥減少用処理液 |
| JP4529316B2 (ja) | 2000-06-23 | 2010-08-25 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物及びスルホニウム塩 |
| TWI286664B (en) | 2000-06-23 | 2007-09-11 | Sumitomo Chemical Co | Chemical amplification type positive resist composition and sulfonium salt |
| US6326131B1 (en) * | 2000-08-31 | 2001-12-04 | Eastman Kodak Company | Highly lubricated imaging element with high coefficient of friction |
| JP2002187780A (ja) | 2000-12-19 | 2002-07-05 | Sumitomo Metal Electronics Devices Inc | 低温焼成セラミック回路基板の製造方法及びその焼成装置 |
| JP2002255930A (ja) * | 2001-03-01 | 2002-09-11 | Fuji Photo Film Co Ltd | 光酸発生化合物、及びポジ型レジスト組成物 |
| US6927009B2 (en) | 2001-05-22 | 2005-08-09 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
| US8065083B2 (en) * | 2004-07-23 | 2011-11-22 | Yamaha Corporation | Azimuth processing device, azimuth processing method, azimuth processing program, direction finding device, tilt offset correcting method, azimuth measuring method, compass sensor unit, and portable electronic device |
-
2002
- 2002-09-25 JP JP2002279273A patent/JP4253486B2/ja not_active Expired - Fee Related
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2003
- 2003-09-23 KR KR1020030065761A patent/KR100955663B1/ko not_active Expired - Fee Related
- 2003-09-24 US US10/668,348 patent/US7033727B2/en not_active Expired - Fee Related
- 2003-09-25 EP EP03021631A patent/EP1406122B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US7033727B2 (en) | 2006-04-25 |
| EP1406122A2 (en) | 2004-04-07 |
| JP2004117688A (ja) | 2004-04-15 |
| US20040072097A1 (en) | 2004-04-15 |
| KR20040030306A (ko) | 2004-04-09 |
| EP1406122B1 (en) | 2013-01-09 |
| EP1406122A3 (en) | 2004-12-01 |
| KR100955663B1 (ko) | 2010-05-06 |
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