JP4231967B2 - 酸化物焼結体、その製造方法、透明導電膜、およびそれを用いて得られる太陽電池 - Google Patents

酸化物焼結体、その製造方法、透明導電膜、およびそれを用いて得られる太陽電池 Download PDF

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JP4231967B2
JP4231967B2 JP2007233826A JP2007233826A JP4231967B2 JP 4231967 B2 JP4231967 B2 JP 4231967B2 JP 2007233826 A JP2007233826 A JP 2007233826A JP 2007233826 A JP2007233826 A JP 2007233826A JP 4231967 B2 JP4231967 B2 JP 4231967B2
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oxide
sintered body
phase
film
atomic
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JP2008110911A (ja
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能之 阿部
徳行 中山
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Sumitomo Metal Mining Co Ltd
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Sumitomo Metal Mining Co Ltd
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Priority to JP2007233826A priority Critical patent/JP4231967B2/ja
Priority to CN2007101638363A priority patent/CN101164966B/zh
Priority to DE102007047146A priority patent/DE102007047146A1/de
Priority to KR1020070099442A priority patent/KR101136953B1/ko
Priority to TW096137005A priority patent/TWI389869B/zh
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JP2007233826A 2006-10-06 2007-09-10 酸化物焼結体、その製造方法、透明導電膜、およびそれを用いて得られる太陽電池 Expired - Fee Related JP4231967B2 (ja)

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Application Number Priority Date Filing Date Title
JP2007233826A JP4231967B2 (ja) 2006-10-06 2007-09-10 酸化物焼結体、その製造方法、透明導電膜、およびそれを用いて得られる太陽電池
CN2007101638363A CN101164966B (zh) 2006-10-06 2007-09-30 氧化物烧结体、其制造方法、透明导电膜、以及采用它所得到的太阳能电池
DE102007047146A DE102007047146A1 (de) 2006-10-06 2007-10-02 Gesintertes Oxid, Verfahren zu dessen Herstellung, transparente elektrisch leitfähige Membran sowie Solarzelle, die unter deren Verwendung erhalten wird
KR1020070099442A KR101136953B1 (ko) 2006-10-06 2007-10-02 산화물 소결체, 그것의 제조 방법, 투명 도전막 및 이를이용한 태양전지
TW096137005A TWI389869B (zh) 2006-10-06 2007-10-03 氧化物燒結體、其製法、透明導電膜及使用它得到之太陽電池

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Application Number Priority Date Filing Date Title
JP2006275313 2006-10-06
JP2007233826A JP4231967B2 (ja) 2006-10-06 2007-09-10 酸化物焼結体、その製造方法、透明導電膜、およびそれを用いて得られる太陽電池

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JP2008110911A JP2008110911A (ja) 2008-05-15
JP4231967B2 true JP4231967B2 (ja) 2009-03-04

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KR (1) KR101136953B1 (ko)
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DE (1) DE102007047146A1 (ko)
TW (1) TWI389869B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148189A1 (ja) * 2013-03-19 2014-09-25 住友金属鉱山株式会社 酸化亜鉛系焼結体とその製造方法およびスパッタリングターゲットと透明導電膜

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5003600B2 (ja) * 2008-06-13 2012-08-15 住友金属鉱山株式会社 酸化物焼結体、ターゲット、およびそれを用いて得られる透明導電膜、導電性積層体
JP5093502B2 (ja) * 2008-07-28 2012-12-12 住友金属鉱山株式会社 薄膜太陽電池及び薄膜太陽電池用表面電極
JP5056651B2 (ja) * 2008-07-28 2012-10-24 住友金属鉱山株式会社 薄膜太陽電池及び薄膜太陽電池用表面電極
JP5093503B2 (ja) * 2008-07-28 2012-12-12 住友金属鉱山株式会社 薄膜太陽電池及び薄膜太陽電池用表面電極
JP5727130B2 (ja) * 2008-08-18 2015-06-03 東ソー株式会社 複合酸化物焼結体及びその用途
JP5581527B2 (ja) 2008-09-30 2014-09-03 エルジー・ケム・リミテッド 透明導電膜、その製造方法、透明電極及び太陽電池
CN102348827B (zh) * 2009-03-13 2015-04-29 住友金属矿山株式会社 透明导电膜和透明导电膜层叠体及其制造方法、以及硅系薄膜太阳能电池
KR20100115193A (ko) * 2009-04-17 2010-10-27 엘지디스플레이 주식회사 태양전지의 제조방법
TWI395336B (zh) * 2009-06-09 2013-05-01 Nat Univ Chung Hsing Optoelectronic semiconductors, conductors, insulators and their design methods with multiple high entropy alloy oxides
JP5418105B2 (ja) * 2009-09-18 2014-02-19 東ソー株式会社 複合酸化物焼結体、酸化物透明導電膜、及びその製造方法
JP5333144B2 (ja) * 2009-10-14 2013-11-06 住友金属鉱山株式会社 薄膜製造用焼結体ターゲットとその製造方法
JP4875135B2 (ja) * 2009-11-18 2012-02-15 出光興産株式会社 In−Ga−Zn−O系スパッタリングターゲット
JP4843083B2 (ja) * 2009-11-19 2011-12-21 出光興産株式会社 In−Ga−Zn系酸化物スパッタリングターゲット
EP2361887A1 (en) * 2010-02-25 2011-08-31 Corning Incorporated A process for manufacturing a doped or non-doped zno material and said material
FR2956924B1 (fr) * 2010-03-01 2012-03-23 Saint Gobain Cellule photovoltaique incorporant une nouvelle couche tco
JP2011222687A (ja) * 2010-04-08 2011-11-04 Tosoh Corp 太陽電池
CN101845615A (zh) * 2010-05-26 2010-09-29 广东志成冠军集团有限公司 RF磁控溅射制备单晶透明ZnO薄膜的方法
KR101091361B1 (ko) 2010-07-30 2011-12-07 엘지이노텍 주식회사 태양광 발전장치 및 이의 제조방법
US8883555B2 (en) 2010-08-25 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Electronic device, manufacturing method of electronic device, and sputtering target
JP5445395B2 (ja) * 2010-08-25 2014-03-19 住友金属鉱山株式会社 透明導電膜の製造方法、及び薄膜太陽電池の製造方法
JP5533448B2 (ja) 2010-08-30 2014-06-25 住友金属鉱山株式会社 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
CN105914241B (zh) * 2010-09-22 2018-07-24 第一太阳能有限公司 光伏装置和形成光伏装置的方法
JP5740992B2 (ja) * 2011-01-14 2015-07-01 東ソー株式会社 酸化物焼結体、それから成るターゲットおよび透明導電膜
KR20180064565A (ko) 2011-06-08 2018-06-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법
WO2013022057A1 (ja) * 2011-08-11 2013-02-14 日本電気硝子株式会社 透明導電材料、透明導電層付基板及び透明導電層付基板の製造方法
JP6042679B2 (ja) * 2012-09-26 2016-12-14 シャープ株式会社 光電変換素子および光電変換素子の製造方法
JP2014095099A (ja) * 2012-11-07 2014-05-22 Sumitomo Metal Mining Co Ltd 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
CN103526169A (zh) * 2013-09-23 2014-01-22 中国科学院电工研究所 一种掺铝氧化锌透明导电薄膜的制备方法
JP6218536B2 (ja) * 2013-09-30 2017-10-25 Hoya株式会社 光学素子およびその製造方法
CN106103380A (zh) * 2014-05-23 2016-11-09 住友金属矿山株式会社 氧化物烧结体、溅射用靶及使用该靶得到的氧化物半导体薄膜
CA2960138C (en) * 2014-09-08 2018-02-20 Hamlin Jennings Silicate coatings
US10227261B2 (en) * 2015-02-27 2019-03-12 Jx Nippon Mining & Metals Corporation Oxide sintered compact, oxide sputtering target, and oxide thin film

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2851773B2 (ja) * 1993-09-09 1999-01-27 京セラ株式会社 窒素酸化物除去用酸化物触媒材料並びに窒素酸化物除去方法
FR2718371B1 (fr) * 1994-04-08 1996-05-03 Rhone Poulenc Chimie Catalyseurs de réduction des oxydes d'azote à base de spinelles.
JPH10306367A (ja) 1997-05-06 1998-11-17 Sumitomo Metal Mining Co Ltd スパッタリングターゲット用ZnO−Ga2O3系焼結体およびその製造方法
WO1999023278A1 (de) * 1997-11-03 1999-05-14 Siemens Aktiengesellschaft Erzeugnis, insbesondere bauteil einer gasturbine, mit keramischer wärmedämmschicht
KR100596017B1 (ko) 2004-04-29 2006-07-03 장민수 투명도전막 및 그 제조방법
KR20050109846A (ko) * 2004-05-17 2005-11-22 주식회사 케이티 투명 전극용 박막 제조 방법 및 그 박막 제조를 위한 타겟
KR20060095534A (ko) * 2006-06-24 2006-08-31 김상문 도전성 재료 및 그것을 이용한 증착용 타겟

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014148189A1 (ja) * 2013-03-19 2014-09-25 住友金属鉱山株式会社 酸化亜鉛系焼結体とその製造方法およびスパッタリングターゲットと透明導電膜

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