JP4225699B2 - ポジ型感光性組成物 - Google Patents

ポジ型感光性組成物 Download PDF

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Publication number
JP4225699B2
JP4225699B2 JP2001069052A JP2001069052A JP4225699B2 JP 4225699 B2 JP4225699 B2 JP 4225699B2 JP 2001069052 A JP2001069052 A JP 2001069052A JP 2001069052 A JP2001069052 A JP 2001069052A JP 4225699 B2 JP4225699 B2 JP 4225699B2
Authority
JP
Japan
Prior art keywords
group
acid
carbon atoms
compound
photosensitive composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2001069052A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002268224A5 (enExample
JP2002268224A (ja
Inventor
邦彦 児玉
利明 青合
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2001069052A priority Critical patent/JP4225699B2/ja
Priority to KR1020020013291A priority patent/KR100890232B1/ko
Priority to TW91104582A priority patent/TW573228B/zh
Priority to US10/095,086 priority patent/US6844132B2/en
Publication of JP2002268224A publication Critical patent/JP2002268224A/ja
Publication of JP2002268224A5 publication Critical patent/JP2002268224A5/ja
Priority to KR1020080095610A priority patent/KR100933915B1/ko
Application granted granted Critical
Publication of JP4225699B2 publication Critical patent/JP4225699B2/ja
Priority to US12/649,828 priority patent/USRE43560E1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/02—Local etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2001069052A 2001-03-12 2001-03-12 ポジ型感光性組成物 Expired - Fee Related JP4225699B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2001069052A JP4225699B2 (ja) 2001-03-12 2001-03-12 ポジ型感光性組成物
KR1020020013291A KR100890232B1 (ko) 2001-03-12 2002-03-12 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법
TW91104582A TW573228B (en) 2001-03-12 2002-03-12 Positive photosensitive compositions
US10/095,086 US6844132B2 (en) 2001-03-12 2002-03-12 Positive photosensitive compositions
KR1020080095610A KR100933915B1 (ko) 2001-03-12 2008-09-29 포지티브 감광성 조성물 및 이를 사용한 패턴 형성 방법
US12/649,828 USRE43560E1 (en) 2001-03-12 2009-12-30 Positive photosensitive compositions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001069052A JP4225699B2 (ja) 2001-03-12 2001-03-12 ポジ型感光性組成物

Publications (3)

Publication Number Publication Date
JP2002268224A JP2002268224A (ja) 2002-09-18
JP2002268224A5 JP2002268224A5 (enExample) 2006-01-19
JP4225699B2 true JP4225699B2 (ja) 2009-02-18

Family

ID=18927140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001069052A Expired - Fee Related JP4225699B2 (ja) 2001-03-12 2001-03-12 ポジ型感光性組成物

Country Status (4)

Country Link
US (2) US6844132B2 (enExample)
JP (1) JP4225699B2 (enExample)
KR (2) KR100890232B1 (enExample)
TW (1) TW573228B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4225699B2 (ja) * 2001-03-12 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
JP2002357905A (ja) * 2001-03-28 2002-12-13 Sumitomo Chem Co Ltd レジスト組成物
US20040192876A1 (en) * 2002-11-18 2004-09-30 Nigel Hacker Novolac polymer planarization films with high temparature stability
JP2004240387A (ja) * 2002-12-10 2004-08-26 Fuji Photo Film Co Ltd ポジ型レジスト組成物
CA2511979A1 (en) * 2003-02-19 2004-09-02 Akira Matsumoto Halogenated oxime derivatives and the use thereof as latent acids
US7182738B2 (en) * 2003-04-23 2007-02-27 Marctec, Llc Patient monitoring apparatus and method for orthosis and other devices
US7358408B2 (en) * 2003-05-16 2008-04-15 Az Electronic Materials Usa Corp. Photoactive compounds
US7910223B2 (en) * 2003-07-17 2011-03-22 Honeywell International Inc. Planarization films for advanced microelectronic applications and devices and methods of production thereof
JP4612999B2 (ja) * 2003-10-08 2011-01-12 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI375121B (en) * 2004-06-28 2012-10-21 Fujifilm Corp Photosensitive composition and method for forming pattern using the same
JP4507729B2 (ja) * 2004-07-15 2010-07-21 日産自動車株式会社 タイヤ空気圧モニター装置
JP4406590B2 (ja) * 2004-09-16 2010-01-27 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4406591B2 (ja) * 2004-09-17 2010-01-27 富士フイルム株式会社 レジスト組成物及び該レジスト組成物を用いたパターン形成方法
JP4452596B2 (ja) 2004-09-24 2010-04-21 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
US20070092829A1 (en) * 2005-10-21 2007-04-26 Christoph Noelscher Photosensitive coating for enhancing a contrast of a photolithographic exposure
US7601480B2 (en) * 2006-12-20 2009-10-13 Az Electronic Materials Usa Corp. Photoactive compounds
JP2009079137A (ja) * 2007-09-26 2009-04-16 Fujifilm Corp 膜形成用組成物及び膜の製造方法
US8084193B2 (en) * 2008-07-12 2011-12-27 International Business Machines Corporation Self-segregating multilayer imaging stack with built-in antireflective properties
EP2458440A1 (en) * 2010-11-30 2012-05-30 Rohm and Haas Electronic Materials LLC Photoacid generators
KR101728820B1 (ko) * 2013-12-12 2017-04-20 제일모직 주식회사 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자
CN120465292B (zh) * 2025-07-17 2025-09-23 科一(福建)超纤有限责任公司 一种环保型水性合成革的制备方法及其应用

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JP3949313B2 (ja) * 1998-03-17 2007-07-25 富士フイルム株式会社 ポジ型感光性組成物
EP0952489B1 (en) 1998-04-22 2014-08-13 FUJIFILM Corporation Positive photosensitive resin composition
JP3922673B2 (ja) 1998-04-22 2007-05-30 富士フイルム株式会社 ポジ型感光性樹脂組成物及びパターン形成方法
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP3763239B2 (ja) 1999-01-18 2006-04-05 住友化学株式会社 化学増幅型ポジ型レジスト組成物
SG76651A1 (en) * 1999-03-31 2000-11-21 Sumitomo Chemical Co Chemical amplification type positive resist
KR100647527B1 (ko) 1999-04-01 2006-11-17 후지 샤신 필름 가부시기가이샤 원자외선 노광용 포지티브 포토레지스트 조성물
JP2000292926A (ja) 1999-04-01 2000-10-20 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物
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TWI295284B (enExample) 2000-04-27 2008-04-01 Shinetsu Chemical Co
JP4544389B2 (ja) 2000-04-28 2010-09-15 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
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JP3880860B2 (ja) 2001-01-22 2007-02-14 信越化学工業株式会社 レジスト材料及びパターン形成方法
KR100795109B1 (ko) 2001-02-23 2008-01-17 후지필름 가부시키가이샤 포지티브 감광성 조성물
JP4225699B2 (ja) * 2001-03-12 2009-02-18 富士フイルム株式会社 ポジ型感光性組成物
JP2002292925A (ja) 2001-03-30 2002-10-09 Kyocera Corp 光プリンタヘッド
JP4257823B2 (ja) 2002-05-27 2009-04-22 パナソニック株式会社 半導体装置および容量測定方法

Also Published As

Publication number Publication date
KR20080091748A (ko) 2008-10-14
KR100933915B1 (ko) 2009-12-28
US6844132B2 (en) 2005-01-18
TW573228B (en) 2004-01-21
JP2002268224A (ja) 2002-09-18
USRE43560E1 (en) 2012-07-31
KR100890232B1 (ko) 2009-03-25
KR20020073095A (ko) 2002-09-19
US20030010748A1 (en) 2003-01-16

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