TW573228B - Positive photosensitive compositions - Google Patents
Positive photosensitive compositions Download PDFInfo
- Publication number
- TW573228B TW573228B TW91104582A TW91104582A TW573228B TW 573228 B TW573228 B TW 573228B TW 91104582 A TW91104582 A TW 91104582A TW 91104582 A TW91104582 A TW 91104582A TW 573228 B TW573228 B TW 573228B
- Authority
- TW
- Taiwan
- Prior art keywords
- positive photosensitive
- photosensitive compositions
- group
- item
- compositions
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 2
- 150000001409 amidines Chemical class 0.000 description 2
- HTPXFGUCAUTOEL-UHFFFAOYSA-N 9h-fluorene-1-carboxylic acid Chemical group C1C2=CC=CC=C2C2=C1C(C(=O)O)=CC=C2 HTPXFGUCAUTOEL-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- CQQZFSZWNXAJQN-UHFFFAOYSA-K europium(3+);trihydroxide Chemical group [OH-].[OH-].[OH-].[Eu+3] CQQZFSZWNXAJQN-UHFFFAOYSA-K 0.000 description 1
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 1
- 125000002883 imidazolyl group Chemical group 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- MGFYSGNNHQQTJW-UHFFFAOYSA-N iodonium Chemical compound [IH2+] MGFYSGNNHQQTJW-UHFFFAOYSA-N 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001069052A JP4225699B2 (ja) | 2001-03-12 | 2001-03-12 | ポジ型感光性組成物 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW573228B true TW573228B (en) | 2004-01-21 |
Family
ID=18927140
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW91104582A TW573228B (en) | 2001-03-12 | 2002-03-12 | Positive photosensitive compositions |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US6844132B2 (enExample) |
| JP (1) | JP4225699B2 (enExample) |
| KR (2) | KR100890232B1 (enExample) |
| TW (1) | TW573228B (enExample) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4225699B2 (ja) * | 2001-03-12 | 2009-02-18 | 富士フイルム株式会社 | ポジ型感光性組成物 |
| JP2002357905A (ja) * | 2001-03-28 | 2002-12-13 | Sumitomo Chem Co Ltd | レジスト組成物 |
| US20040192876A1 (en) * | 2002-11-18 | 2004-09-30 | Nigel Hacker | Novolac polymer planarization films with high temparature stability |
| JP2004240387A (ja) * | 2002-12-10 | 2004-08-26 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
| CA2511979A1 (en) * | 2003-02-19 | 2004-09-02 | Akira Matsumoto | Halogenated oxime derivatives and the use thereof as latent acids |
| US7182738B2 (en) * | 2003-04-23 | 2007-02-27 | Marctec, Llc | Patient monitoring apparatus and method for orthosis and other devices |
| US7358408B2 (en) * | 2003-05-16 | 2008-04-15 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| US7910223B2 (en) * | 2003-07-17 | 2011-03-22 | Honeywell International Inc. | Planarization films for advanced microelectronic applications and devices and methods of production thereof |
| JP4612999B2 (ja) * | 2003-10-08 | 2011-01-12 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
| TWI375121B (en) * | 2004-06-28 | 2012-10-21 | Fujifilm Corp | Photosensitive composition and method for forming pattern using the same |
| JP4507729B2 (ja) * | 2004-07-15 | 2010-07-21 | 日産自動車株式会社 | タイヤ空気圧モニター装置 |
| JP4406590B2 (ja) * | 2004-09-16 | 2010-01-27 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| JP4406591B2 (ja) * | 2004-09-17 | 2010-01-27 | 富士フイルム株式会社 | レジスト組成物及び該レジスト組成物を用いたパターン形成方法 |
| JP4452596B2 (ja) | 2004-09-24 | 2010-04-21 | 富士フイルム株式会社 | 感光性組成物及び該感光性組成物を用いたパターン形成方法 |
| US20070092829A1 (en) * | 2005-10-21 | 2007-04-26 | Christoph Noelscher | Photosensitive coating for enhancing a contrast of a photolithographic exposure |
| US7601480B2 (en) * | 2006-12-20 | 2009-10-13 | Az Electronic Materials Usa Corp. | Photoactive compounds |
| JP2009079137A (ja) * | 2007-09-26 | 2009-04-16 | Fujifilm Corp | 膜形成用組成物及び膜の製造方法 |
| US8084193B2 (en) * | 2008-07-12 | 2011-12-27 | International Business Machines Corporation | Self-segregating multilayer imaging stack with built-in antireflective properties |
| EP2458440A1 (en) * | 2010-11-30 | 2012-05-30 | Rohm and Haas Electronic Materials LLC | Photoacid generators |
| KR101728820B1 (ko) * | 2013-12-12 | 2017-04-20 | 제일모직 주식회사 | 포지티브형 감광성 수지 조성물, 감광성 수지막, 및 표시 소자 |
| CN120465292B (zh) * | 2025-07-17 | 2025-09-23 | 科一(福建)超纤有限责任公司 | 一种环保型水性合成革的制备方法及其应用 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3949313B2 (ja) * | 1998-03-17 | 2007-07-25 | 富士フイルム株式会社 | ポジ型感光性組成物 |
| EP0952489B1 (en) | 1998-04-22 | 2014-08-13 | FUJIFILM Corporation | Positive photosensitive resin composition |
| JP3922673B2 (ja) | 1998-04-22 | 2007-05-30 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物及びパターン形成方法 |
| TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
| JP3763239B2 (ja) | 1999-01-18 | 2006-04-05 | 住友化学株式会社 | 化学増幅型ポジ型レジスト組成物 |
| SG76651A1 (en) * | 1999-03-31 | 2000-11-21 | Sumitomo Chemical Co | Chemical amplification type positive resist |
| KR100647527B1 (ko) | 1999-04-01 | 2006-11-17 | 후지 샤신 필름 가부시기가이샤 | 원자외선 노광용 포지티브 포토레지스트 조성물 |
| JP2000292926A (ja) | 1999-04-01 | 2000-10-20 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
| JP4124907B2 (ja) * | 1999-04-06 | 2008-07-23 | 東京応化工業株式会社 | ポジ型レジスト組成物 |
| JP2001022072A (ja) | 1999-07-07 | 2001-01-26 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
| JP2001022070A (ja) | 1999-07-07 | 2001-01-26 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
| US6596458B1 (en) * | 1999-05-07 | 2003-07-22 | Fuji Photo Film Co., Ltd. | Positive-working photoresist composition |
| JP3992882B2 (ja) | 1999-06-04 | 2007-10-17 | 富士フイルム株式会社 | 遠紫外線露光用ポジ型フォトレジスト組成物 |
| JP2000338679A (ja) | 1999-05-31 | 2000-12-08 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
| US6479211B1 (en) * | 1999-05-26 | 2002-11-12 | Fuji Photo Film Co., Ltd. | Positive photoresist composition for far ultraviolet exposure |
| JP2000338673A (ja) * | 1999-05-26 | 2000-12-08 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
| JP3812622B2 (ja) | 1999-09-17 | 2006-08-23 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP4269119B2 (ja) | 1999-10-25 | 2009-05-27 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| US6623907B2 (en) * | 2000-02-04 | 2003-09-23 | Jsr Corporation | Radiation-sensitive resin composition |
| US6541179B2 (en) | 2000-03-21 | 2003-04-01 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
| JP3821211B2 (ja) | 2000-03-21 | 2006-09-13 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP4300383B2 (ja) | 2000-04-11 | 2009-07-22 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| JP4831275B2 (ja) | 2000-04-27 | 2011-12-07 | 信越化学工業株式会社 | 新規なエステル化合物、高分子化合物、レジスト材料、及びパターン形成方法 |
| TWI295284B (enExample) | 2000-04-27 | 2008-04-01 | Shinetsu Chemical Co | |
| JP4544389B2 (ja) | 2000-04-28 | 2010-09-15 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| US6492090B2 (en) | 2000-04-28 | 2002-12-10 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
| US6815143B2 (en) | 2001-01-22 | 2004-11-09 | Shin-Etsu Chemical Co., Ltd. | Resist material and pattern forming method |
| JP3880860B2 (ja) | 2001-01-22 | 2007-02-14 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
| KR100795109B1 (ko) | 2001-02-23 | 2008-01-17 | 후지필름 가부시키가이샤 | 포지티브 감광성 조성물 |
| JP4225699B2 (ja) * | 2001-03-12 | 2009-02-18 | 富士フイルム株式会社 | ポジ型感光性組成物 |
| JP2002292925A (ja) | 2001-03-30 | 2002-10-09 | Kyocera Corp | 光プリンタヘッド |
| JP4257823B2 (ja) | 2002-05-27 | 2009-04-22 | パナソニック株式会社 | 半導体装置および容量測定方法 |
-
2001
- 2001-03-12 JP JP2001069052A patent/JP4225699B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-12 KR KR1020020013291A patent/KR100890232B1/ko not_active Expired - Lifetime
- 2002-03-12 US US10/095,086 patent/US6844132B2/en not_active Ceased
- 2002-03-12 TW TW91104582A patent/TW573228B/zh active
-
2008
- 2008-09-29 KR KR1020080095610A patent/KR100933915B1/ko not_active Expired - Lifetime
-
2009
- 2009-12-30 US US12/649,828 patent/USRE43560E1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR20080091748A (ko) | 2008-10-14 |
| KR100933915B1 (ko) | 2009-12-28 |
| US6844132B2 (en) | 2005-01-18 |
| JP2002268224A (ja) | 2002-09-18 |
| USRE43560E1 (en) | 2012-07-31 |
| KR100890232B1 (ko) | 2009-03-25 |
| KR20020073095A (ko) | 2002-09-19 |
| US20030010748A1 (en) | 2003-01-16 |
| JP4225699B2 (ja) | 2009-02-18 |
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