JP4211586B2 - 圧電体デバイス及び液体吐出ヘッド並びにこれらの製造方法、薄膜形成装置 - Google Patents
圧電体デバイス及び液体吐出ヘッド並びにこれらの製造方法、薄膜形成装置 Download PDFInfo
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- JP4211586B2 JP4211586B2 JP2003402516A JP2003402516A JP4211586B2 JP 4211586 B2 JP4211586 B2 JP 4211586B2 JP 2003402516 A JP2003402516 A JP 2003402516A JP 2003402516 A JP2003402516 A JP 2003402516A JP 4211586 B2 JP4211586 B2 JP 4211586B2
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
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- H10N30/8548—Lead based oxides
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Semiconductor Memories (AREA)
Description
図1は、本発明の圧電体デバイス及びこれを用いた液体吐出ヘッドの実施形態を示す断面図である。
基板52は、下部電極542等を支持する機能を有するものであり、平板状をなす部材で構成されている。
基板52上には、薄膜よりなる中間膜55が形成されている。
中間膜55上には、下部電極542が形成されている。前述したように、中間膜55は、二軸配向しているので、この中間膜55上に、下部電極542を形成することにより、下部電極542は、配向方位が揃ったものとなる。特に、下部電極542は、中間膜55上にエピタキシャル成長により形成することが望ましい。このような下部電極542を形成することにより、圧電体デバイスは、各種特性が向上する。
この下部電極542上には、圧電体膜543が形成されている。下部電極542は、前述の通り配向方位が揃っているので、この下部電極542上に圧電体膜543を形成することにより、圧電体膜543は、配向方位が揃ったものとなる。特に、圧電体膜543は、下部電極上にエピタキシャル成長により形成することが望ましい。
圧電体膜543上には、上部電極541が形成されている。
次に、図2に基づき、圧電体デバイスの製造方法について説明する。
次に、基板52上に中間膜55を形成する。これは、例えば、次のようにして行うことができる。
次に、中間膜55上に下部電極542を形成する。この下部電極542は、例えば、次のようにして形成することができる。
次に、下部電極542上に圧電体膜543を形成する。これは、例えば、次のようにして行うことができる。
次に、図2[4C]に示すように、圧電体膜543上に上部電極541を形成する。具体的には、上部電極541として白金(Pt)等を100nmの膜厚に直流スパッタ法で成膜する。
次に、図2[5C]に示すように、圧電体膜543及び上部電極541を所定形状に加工して圧電体デバイスを形成する。具体的には、上部電極541上にレジストをスピンコートした後、所定形状に露光、現像してパターニングする。残ったレジストをマスクとして上部電極541、圧電体膜543をイオンミリング等でエッチングする。
本発明の圧電体デバイスを備える液体吐出ヘッドであるインクジェット式記録ヘッドについて説明する。
次に、ヘッド50の製造方法の一例について説明する。前述したようなヘッド50は、例えば、次のようにして製造することができる。
本発明のインクジェット式記録ヘッドを備えた液体吐出装置であるインクジェットプリンタについて説明する。
以上、本発明の圧電体デバイス、インクジェット式記録ヘッドおよびインクジェットプリンタについて、図示の実施形態に基づいて説明したが、本発明は、これらに限定されるものではない。
Claims (6)
- 基板上に、イオンビームアシストレーザアブレーション法により形成した層を一部有し、全体として二軸配向した中間膜を形成する工程と、
前記中間膜上にエピタキシャル成長によって下部電極を形成する工程と、
前記下部電極上にエピタキシャル成長によって圧電体膜を形成する工程と、
前記圧電体膜上に上部電極を形成する工程と、を有し、
前記イオンビームアシストレーザアブレーション法により前記層を形成する際に、照射するアブレーションプルームの中心軸が基板の法線方向と53度以上57度以下の角度をなすことを特徴とする、
圧電体デバイスの製造方法。 - 請求項1において、イオンビームアシストレーザアブレーション法により形成する前記層が、フルオライト型酸化物、あるいはパイロクロア型酸化物であることを特徴とする、
圧電体デバイスの製造方法。 - 請求項1又は2において、イオンビームアシストレーザアブレーション法により前記層を形成する際に、イオンビームの照射方向が、基板の法線方向と53度以上57度以下の角度をなし、かつアブレーションプルームの中心軸と69度以上73度以下又は108度以上112度以下の角度をなすことを特徴とする、
圧電体デバイスの製造方法。 - 請求項1乃至請求項3の何れか一項に記載の製造方法により圧電体デバイスを形成する工程と、
前記圧電体デバイスの前記圧電体膜の変形によって内容積が変化するキャビティを、前記圧電体デバイスの前記基板に形成する工程と、
を備えた液体吐出ヘッドの製造方法。 - 請求項4に記載の製造方法により形成された液体吐出ヘッドを用いることを特徴とする、
液体吐出装置の製造方法。 - 基板上にイオンビームを照射可能なイオン源と、
前記基板の法線方向と53度以上57度以下の角度をなす位置に配置されたターゲットにレーザー光を照射しターゲット構成粒子のプルームを発生可能なレーザー光発生装置と、
を備えた薄膜形成装置。
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US11/001,651 US7197799B2 (en) | 2003-12-02 | 2004-12-01 | Method for manufacturing a piezoelectric device |
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JP4961711B2 (ja) * | 2005-03-22 | 2012-06-27 | コニカミノルタホールディングス株式会社 | インクジェットヘッド用貫通電極付き基板の製造方法及びインクジェットヘッドの製造方法 |
JP5158299B2 (ja) * | 2005-08-05 | 2013-03-06 | セイコーエプソン株式会社 | 圧電素子、アクチュエータ装置、液体噴射ヘッド、液体噴射装置及び圧電素子の製造方法 |
JP4258530B2 (ja) * | 2006-06-05 | 2009-04-30 | 日立電線株式会社 | 圧電薄膜素子 |
JP5495512B2 (ja) * | 2007-05-30 | 2014-05-21 | キヤノン株式会社 | 圧電素子の製造方法 |
JP5531653B2 (ja) * | 2010-02-02 | 2014-06-25 | 日立金属株式会社 | 圧電薄膜素子、その製造方法及び圧電薄膜デバイス |
US8866367B2 (en) | 2011-10-17 | 2014-10-21 | The United States Of America As Represented By The Secretary Of The Army | Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making |
US9761785B2 (en) | 2011-10-17 | 2017-09-12 | The United States Of America As Represented By The Secretary Of The Army | Stylo-epitaxial piezoelectric and ferroelectric devices and method of manufacturing |
CN103916048B (zh) * | 2013-01-07 | 2016-10-12 | 北京嘉岳同乐极电子有限公司 | 压电震动发电装置及其制造方法 |
JP6525620B2 (ja) * | 2015-02-05 | 2019-06-05 | キヤノン株式会社 | 液体吐出ヘッド用基板の製造方法 |
JP6814916B2 (ja) * | 2015-12-18 | 2021-01-20 | アドバンストマテリアルテクノロジーズ株式会社 | 膜構造体、アクチュエータ、モータ及び膜構造体の製造方法 |
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