JP4199914B2 - ポジ型レジスト組成物 - Google Patents

ポジ型レジスト組成物 Download PDF

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Publication number
JP4199914B2
JP4199914B2 JP2000363338A JP2000363338A JP4199914B2 JP 4199914 B2 JP4199914 B2 JP 4199914B2 JP 2000363338 A JP2000363338 A JP 2000363338A JP 2000363338 A JP2000363338 A JP 2000363338A JP 4199914 B2 JP4199914 B2 JP 4199914B2
Authority
JP
Japan
Prior art keywords
group
substituent
acid
represented
hydrogen atom
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000363338A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002169287A (ja
JP2002169287A5 (enrdf_load_stackoverflow
Inventor
利明 青合
昭一郎 安波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2000363338A priority Critical patent/JP4199914B2/ja
Priority to TW090127859A priority patent/TW538315B/zh
Priority to KR1020010075065A priority patent/KR100817189B1/ko
Publication of JP2002169287A publication Critical patent/JP2002169287A/ja
Publication of JP2002169287A5 publication Critical patent/JP2002169287A5/ja
Application granted granted Critical
Publication of JP4199914B2 publication Critical patent/JP4199914B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
    • C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
    • C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D213/60—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D213/62—Oxygen or sulfur atoms
    • C07D213/63—One oxygen atom
    • C07D213/64—One oxygen atom attached in position 2 or 6
    • C07D213/643—2-Phenoxypyridines; Derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D498/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
    • C07D498/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D498/04—Ortho-condensed systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP2000363338A 2000-11-29 2000-11-29 ポジ型レジスト組成物 Expired - Lifetime JP4199914B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000363338A JP4199914B2 (ja) 2000-11-29 2000-11-29 ポジ型レジスト組成物
TW090127859A TW538315B (en) 2000-11-29 2001-11-09 Positive resist composition
KR1020010075065A KR100817189B1 (ko) 2000-11-29 2001-11-29 포지티브 레지스트 조성물

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000363338A JP4199914B2 (ja) 2000-11-29 2000-11-29 ポジ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2002169287A JP2002169287A (ja) 2002-06-14
JP2002169287A5 JP2002169287A5 (enrdf_load_stackoverflow) 2006-01-12
JP4199914B2 true JP4199914B2 (ja) 2008-12-24

Family

ID=18834462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000363338A Expired - Lifetime JP4199914B2 (ja) 2000-11-29 2000-11-29 ポジ型レジスト組成物

Country Status (3)

Country Link
JP (1) JP4199914B2 (enrdf_load_stackoverflow)
KR (1) KR100817189B1 (enrdf_load_stackoverflow)
TW (1) TW538315B (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
JP4190167B2 (ja) * 2000-09-26 2008-12-03 富士フイルム株式会社 ポジ型レジスト組成物
JPWO2003007080A1 (ja) * 2001-07-12 2004-11-04 株式会社半導体先端テクノロジーズ 微細パターン形成方法
US20040248042A1 (en) * 2001-10-03 2004-12-09 Minoru Toriumi Method of forming fine pattern
JP2003140345A (ja) * 2001-11-02 2003-05-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物
WO2004040376A1 (ja) 2002-10-29 2004-05-13 Jsr Corporation 感放射線性樹脂組成物
JP4502715B2 (ja) * 2004-03-05 2010-07-14 東京応化工業株式会社 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法
JP5353043B2 (ja) * 2008-04-11 2013-11-27 信越化学工業株式会社 環状オレフィン付加重合体及びその製造方法
CN111285963A (zh) * 2020-02-28 2020-06-16 宁波南大光电材料有限公司 含羟基的酸扩散抑制剂及其制备方法与光刻胶组合物

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2659025B2 (ja) * 1990-01-24 1997-09-30 富士通株式会社 放射線用レジスト及びその製造方法及びパターン形成方法
JP2944857B2 (ja) * 1993-06-25 1999-09-06 日本電信電話株式会社 オーバーコート材料
JPH0954437A (ja) * 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
JP3922673B2 (ja) * 1998-04-22 2007-05-30 富士フイルム株式会社 ポジ型感光性樹脂組成物及びパターン形成方法
JP3824288B2 (ja) * 1998-05-26 2006-09-20 富士写真フイルム株式会社 ポジ型感光性樹脂組成物
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP4161358B2 (ja) * 1998-12-22 2008-10-08 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4019403B2 (ja) * 1999-03-08 2007-12-12 Ｊｓｒ株式会社 レジストパターンの形成方法
JP2000298346A (ja) * 1999-04-14 2000-10-24 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造法
JP4281152B2 (ja) * 1999-05-14 2009-06-17 Ｊｓｒ株式会社 スルホン酸オニウム塩化合物および感放射線性樹脂組成物
JP3861966B2 (ja) * 2000-02-16 2006-12-27 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料及びパターン形成方法
US6468712B1 (en) * 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
JP3410707B2 (ja) * 2000-04-19 2003-05-26 松下電器産業株式会社 パターン形成材料及びパターン形成方法
JP4019247B2 (ja) * 2000-06-02 2007-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2002107932A (ja) * 2000-10-03 2002-04-10 Toray Ind Inc 感放射線性組成物
JP2002194085A (ja) * 2000-10-20 2002-07-10 Jsr Corp ポリシロキサン

Also Published As

Publication number Publication date
JP2002169287A (ja) 2002-06-14
KR20020042503A (ko) 2002-06-05
KR100817189B1 (ko) 2008-03-27
TW538315B (en) 2003-06-21

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