JP2002169287A5 - - Google Patents
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- Publication number
- JP2002169287A5 JP2002169287A5 JP2000363338A JP2000363338A JP2002169287A5 JP 2002169287 A5 JP2002169287 A5 JP 2002169287A5 JP 2000363338 A JP2000363338 A JP 2000363338A JP 2000363338 A JP2000363338 A JP 2000363338A JP 2002169287 A5 JP2002169287 A5 JP 2002169287A5
- Authority
- JP
- Japan
- Prior art keywords
- group
- substituent
- hydrogen atom
- cycloalkyl
- arylene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 125000001424 substituent group Chemical group 0.000 description 21
- 125000000217 alkyl group Chemical group 0.000 description 17
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 15
- 125000000753 cycloalkyl group Chemical group 0.000 description 14
- 125000000732 arylene group Chemical group 0.000 description 12
- 125000003118 aryl group Chemical group 0.000 description 11
- 125000002947 alkylene group Chemical group 0.000 description 9
- 125000003710 aryl alkyl group Chemical group 0.000 description 9
- 125000004450 alkenylene group Chemical group 0.000 description 8
- 125000002993 cycloalkylene group Chemical group 0.000 description 8
- 125000005843 halogen group Chemical group 0.000 description 8
- 125000003545 alkoxy group Chemical group 0.000 description 6
- 125000004093 cyano group Chemical group *C#N 0.000 description 6
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- -1 —OH Chemical group 0.000 description 5
- 150000007945 N-acyl ureas Chemical group 0.000 description 4
- 125000003368 amide group Chemical group 0.000 description 4
- 125000004185 ester group Chemical group 0.000 description 4
- 125000001033 ether group Chemical group 0.000 description 4
- 125000001188 haloalkyl group Chemical group 0.000 description 4
- 125000000547 substituted alkyl group Chemical group 0.000 description 4
- JOYRKODLDBILNP-UHFFFAOYSA-N urethane group Chemical group NC(=O)OCC JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 4
- 125000003342 alkenyl group Chemical group 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- 125000002252 acyl group Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 125000002950 monocyclic group Chemical group 0.000 description 2
- 125000003367 polycyclic group Chemical group 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 1
- 125000000304 alkynyl group Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 125000005389 trialkylsiloxy group Chemical group 0.000 description 1
- 125000004665 trialkylsilyl group Chemical group 0.000 description 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000363338A JP4199914B2 (ja) | 2000-11-29 | 2000-11-29 | ポジ型レジスト組成物 |
| TW090127859A TW538315B (en) | 2000-11-29 | 2001-11-09 | Positive resist composition |
| KR1020010075065A KR100817189B1 (ko) | 2000-11-29 | 2001-11-29 | 포지티브 레지스트 조성물 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000363338A JP4199914B2 (ja) | 2000-11-29 | 2000-11-29 | ポジ型レジスト組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002169287A JP2002169287A (ja) | 2002-06-14 |
| JP2002169287A5 true JP2002169287A5 (enrdf_load_stackoverflow) | 2006-01-12 |
| JP4199914B2 JP4199914B2 (ja) | 2008-12-24 |
Family
ID=18834462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000363338A Expired - Lifetime JP4199914B2 (ja) | 2000-11-29 | 2000-11-29 | ポジ型レジスト組成物 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4199914B2 (enrdf_load_stackoverflow) |
| KR (1) | KR100817189B1 (enrdf_load_stackoverflow) |
| TW (1) | TW538315B (enrdf_load_stackoverflow) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1035441A1 (en) * | 1999-03-09 | 2000-09-13 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
| JP4190167B2 (ja) * | 2000-09-26 | 2008-12-03 | 富士フイルム株式会社 | ポジ型レジスト組成物 |
| JPWO2003007080A1 (ja) * | 2001-07-12 | 2004-11-04 | 株式会社半導体先端テクノロジーズ | 微細パターン形成方法 |
| US20040248042A1 (en) * | 2001-10-03 | 2004-12-09 | Minoru Toriumi | Method of forming fine pattern |
| JP2003140345A (ja) * | 2001-11-02 | 2003-05-14 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
| WO2004040376A1 (ja) | 2002-10-29 | 2004-05-13 | Jsr Corporation | 感放射線性樹脂組成物 |
| JP4502715B2 (ja) * | 2004-03-05 | 2010-07-14 | 東京応化工業株式会社 | 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法 |
| JP5353043B2 (ja) * | 2008-04-11 | 2013-11-27 | 信越化学工業株式会社 | 環状オレフィン付加重合体及びその製造方法 |
| CN111285963A (zh) * | 2020-02-28 | 2020-06-16 | 宁波南大光电材料有限公司 | 含羟基的酸扩散抑制剂及其制备方法与光刻胶组合物 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2659025B2 (ja) * | 1990-01-24 | 1997-09-30 | 富士通株式会社 | 放射線用レジスト及びその製造方法及びパターン形成方法 |
| JP2944857B2 (ja) * | 1993-06-25 | 1999-09-06 | 日本電信電話株式会社 | オーバーコート材料 |
| JPH0954437A (ja) * | 1995-06-05 | 1997-02-25 | Fuji Photo Film Co Ltd | 化学増幅型ポジレジスト組成物 |
| JP3922673B2 (ja) * | 1998-04-22 | 2007-05-30 | 富士フイルム株式会社 | ポジ型感光性樹脂組成物及びパターン形成方法 |
| JP3824288B2 (ja) * | 1998-05-26 | 2006-09-20 | 富士写真フイルム株式会社 | ポジ型感光性樹脂組成物 |
| TWI250379B (en) * | 1998-08-07 | 2006-03-01 | Az Electronic Materials Japan | Chemical amplified radiation-sensitive composition which contains onium salt and generator |
| JP4161358B2 (ja) * | 1998-12-22 | 2008-10-08 | Ｊｓｒ株式会社 | 感放射線性樹脂組成物 |
| JP4019403B2 (ja) * | 1999-03-08 | 2007-12-12 | Ｊｓｒ株式会社 | レジストパターンの形成方法 |
| JP2000298346A (ja) * | 1999-04-14 | 2000-10-24 | Toray Ind Inc | ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造法 |
| JP4281152B2 (ja) * | 1999-05-14 | 2009-06-17 | Ｊｓｒ株式会社 | スルホン酸オニウム塩化合物および感放射線性樹脂組成物 |
| JP3861966B2 (ja) * | 2000-02-16 | 2006-12-27 | 信越化学工業株式会社 | 高分子化合物、化学増幅レジスト材料及びパターン形成方法 |
| US6468712B1 (en) * | 2000-02-25 | 2002-10-22 | Massachusetts Institute Of Technology | Resist materials for 157-nm lithography |
| JP3410707B2 (ja) * | 2000-04-19 | 2003-05-26 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
| JP4019247B2 (ja) * | 2000-06-02 | 2007-12-12 | 信越化学工業株式会社 | 高分子化合物、レジスト材料及びパターン形成方法 |
| JP2002107932A (ja) * | 2000-10-03 | 2002-04-10 | Toray Ind Inc | 感放射線性組成物 |
| JP2002194085A (ja) * | 2000-10-20 | 2002-07-10 | Jsr Corp | ポリシロキサン |
-
2000
- 2000-11-29 JP JP2000363338A patent/JP4199914B2/ja not_active Expired - Lifetime
-
2001
- 2001-11-09 TW TW090127859A patent/TW538315B/zh not_active IP Right Cessation
- 2001-11-29 KR KR1020010075065A patent/KR100817189B1/ko not_active Expired - Fee Related