KR100817189B1 - 포지티브 레지스트 조성물 - Google Patents

포지티브 레지스트 조성물 Download PDF

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Publication number
KR100817189B1
KR100817189B1 KR1020010075065A KR20010075065A KR100817189B1 KR 100817189 B1 KR100817189 B1 KR 100817189B1 KR 1020010075065 A KR1020010075065 A KR 1020010075065A KR 20010075065 A KR20010075065 A KR 20010075065A KR 100817189 B1 KR100817189 B1 KR 100817189B1
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KR
South Korea
Prior art keywords
group
substituent
hydrogen atom
alkyl
aryl
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Expired - Fee Related
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KR1020010075065A
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English (en)
Korean (ko)
Other versions
KR20020042503A (ko
Inventor
아오아이토시아키
야스나미쇼이치로
Original Assignee
후지필름 가부시키가이샤
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Publication of KR20020042503A publication Critical patent/KR20020042503A/ko
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Publication of KR100817189B1 publication Critical patent/KR100817189B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D213/00—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members
    • C07D213/02—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members
    • C07D213/04—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom
    • C07D213/60—Heterocyclic compounds containing six-membered rings, not condensed with other rings, with one nitrogen atom as the only ring hetero atom and three or more double bonds between ring members or between ring members and non-ring members having three double bonds between ring members or between ring members and non-ring members having no bond between the ring nitrogen atom and a non-ring member or having only hydrogen or carbon atoms directly attached to the ring nitrogen atom with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D213/62—Oxygen or sulfur atoms
    • C07D213/63—One oxygen atom
    • C07D213/64—One oxygen atom attached in position 2 or 6
    • C07D213/643—2-Phenoxypyridines; Derivatives thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D498/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms
    • C07D498/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having nitrogen and oxygen atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D498/04—Ortho-condensed systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020010075065A 2000-11-29 2001-11-29 포지티브 레지스트 조성물 Expired - Fee Related KR100817189B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2000-00363338 2000-11-29
JP2000363338A JP4199914B2 (ja) 2000-11-29 2000-11-29 ポジ型レジスト組成物

Publications (2)

Publication Number Publication Date
KR20020042503A KR20020042503A (ko) 2002-06-05
KR100817189B1 true KR100817189B1 (ko) 2008-03-27

Family

ID=18834462

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010075065A Expired - Fee Related KR100817189B1 (ko) 2000-11-29 2001-11-29 포지티브 레지스트 조성물

Country Status (3)

Country Link
JP (1) JP4199914B2 (enrdf_load_stackoverflow)
KR (1) KR100817189B1 (enrdf_load_stackoverflow)
TW (1) TW538315B (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
JP4190167B2 (ja) * 2000-09-26 2008-12-03 富士フイルム株式会社 ポジ型レジスト組成物
JPWO2003007080A1 (ja) * 2001-07-12 2004-11-04 株式会社半導体先端テクノロジーズ 微細パターン形成方法
US20040248042A1 (en) * 2001-10-03 2004-12-09 Minoru Toriumi Method of forming fine pattern
JP2003140345A (ja) * 2001-11-02 2003-05-14 Fuji Photo Film Co Ltd ポジ型レジスト組成物
WO2004040376A1 (ja) 2002-10-29 2004-05-13 Jsr Corporation 感放射線性樹脂組成物
JP4502715B2 (ja) * 2004-03-05 2010-07-14 東京応化工業株式会社 液浸露光用ポジ型レジスト組成物およびレジストパターンの形成方法
JP5353043B2 (ja) * 2008-04-11 2013-11-27 信越化学工業株式会社 環状オレフィン付加重合体及びその製造方法
CN111285963A (zh) * 2020-02-28 2020-06-16 宁波南大光电材料有限公司 含羟基的酸扩散抑制剂及其制备方法与光刻胶组合物

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0954437A (ja) * 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2659025B2 (ja) * 1990-01-24 1997-09-30 富士通株式会社 放射線用レジスト及びその製造方法及びパターン形成方法
JP2944857B2 (ja) * 1993-06-25 1999-09-06 日本電信電話株式会社 オーバーコート材料
JP3922673B2 (ja) * 1998-04-22 2007-05-30 富士フイルム株式会社 ポジ型感光性樹脂組成物及びパターン形成方法
JP3824288B2 (ja) * 1998-05-26 2006-09-20 富士写真フイルム株式会社 ポジ型感光性樹脂組成物
TWI250379B (en) * 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
JP4161358B2 (ja) * 1998-12-22 2008-10-08 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP4019403B2 (ja) * 1999-03-08 2007-12-12 Ｊｓｒ株式会社 レジストパターンの形成方法
JP2000298346A (ja) * 1999-04-14 2000-10-24 Toray Ind Inc ポジ型感放射線性組成物およびこれを用いたレジストパターンの製造法
JP4281152B2 (ja) * 1999-05-14 2009-06-17 Ｊｓｒ株式会社 スルホン酸オニウム塩化合物および感放射線性樹脂組成物
JP3861966B2 (ja) * 2000-02-16 2006-12-27 信越化学工業株式会社 高分子化合物、化学増幅レジスト材料及びパターン形成方法
US6468712B1 (en) * 2000-02-25 2002-10-22 Massachusetts Institute Of Technology Resist materials for 157-nm lithography
JP3410707B2 (ja) * 2000-04-19 2003-05-26 松下電器産業株式会社 パターン形成材料及びパターン形成方法
JP4019247B2 (ja) * 2000-06-02 2007-12-12 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP2002107932A (ja) * 2000-10-03 2002-04-10 Toray Ind Inc 感放射線性組成物
JP2002194085A (ja) * 2000-10-20 2002-07-10 Jsr Corp ポリシロキサン

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0954437A (ja) * 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
KR100424148B1 (ko) * 1995-06-05 2005-04-06 후지 샤신 필름 가부시기가이샤 화학증폭형포지티브레지스트조성물

Also Published As

Publication number Publication date
JP2002169287A (ja) 2002-06-14
JP4199914B2 (ja) 2008-12-24
KR20020042503A (ko) 2002-06-05
TW538315B (en) 2003-06-21

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