JP4183784B2 - 液晶パネルの作製方法 - Google Patents
液晶パネルの作製方法 Download PDFInfo
- Publication number
- JP4183784B2 JP4183784B2 JP26088297A JP26088297A JP4183784B2 JP 4183784 B2 JP4183784 B2 JP 4183784B2 JP 26088297 A JP26088297 A JP 26088297A JP 26088297 A JP26088297 A JP 26088297A JP 4183784 B2 JP4183784 B2 JP 4183784B2
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- pixel
- photoelectric conversion
- film
- liquid crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 39
- 239000004973 liquid crystal related substance Substances 0.000 title claims description 33
- 238000006243 chemical reaction Methods 0.000 claims description 45
- 239000012212 insulator Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 33
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229920001721 polyimide Polymers 0.000 claims description 10
- 239000004642 Polyimide Substances 0.000 claims description 8
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 239000000049 pigment Substances 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- 239000003575 carbonaceous material Substances 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 105
- 239000010410 layer Substances 0.000 description 103
- 239000006096 absorbing agent Substances 0.000 description 35
- 239000011159 matrix material Substances 0.000 description 34
- 239000011229 interlayer Substances 0.000 description 19
- 229910021417 amorphous silicon Inorganic materials 0.000 description 18
- 238000004380 ashing Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 16
- 238000012546 transfer Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 238000001312 dry etching Methods 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229920000178 Acrylic resin Polymers 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
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- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26088297A JP4183784B2 (ja) | 1997-09-09 | 1997-09-09 | 液晶パネルの作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26088297A JP4183784B2 (ja) | 1997-09-09 | 1997-09-09 | 液晶パネルの作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008121034A Division JP4986923B2 (ja) | 2008-05-07 | 2008-05-07 | イメージセンサの作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH1187683A JPH1187683A (ja) | 1999-03-30 |
| JPH1187683A5 JPH1187683A5 (enExample) | 2005-05-19 |
| JP4183784B2 true JP4183784B2 (ja) | 2008-11-19 |
Family
ID=17354068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26088297A Expired - Lifetime JP4183784B2 (ja) | 1997-09-09 | 1997-09-09 | 液晶パネルの作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4183784B2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3910341B2 (ja) * | 1999-08-04 | 2007-04-25 | シャープ株式会社 | 二次元画像検出器 |
| JP4846562B2 (ja) * | 1999-08-04 | 2011-12-28 | シャープ株式会社 | 二次元画像検出器 |
| JP2001313384A (ja) * | 2000-04-28 | 2001-11-09 | Shimadzu Corp | 放射線検出器 |
| JP4562875B2 (ja) * | 2000-07-17 | 2010-10-13 | 浜松ホトニクス株式会社 | 半導体装置 |
| JP4514182B2 (ja) * | 2002-05-21 | 2010-07-28 | キヤノン株式会社 | 画像形成装置及び放射線検出装置 |
| FR2849272B1 (fr) | 2002-12-19 | 2005-11-18 | Commissariat Energie Atomique | Dispositif de detection photo-electrique et notamment de rayonnement x ou y |
| JP4729275B2 (ja) * | 2004-07-16 | 2011-07-20 | 富士フイルム株式会社 | 有機材料層のパターニング方法およびこれを用いた電子デバイス |
| JP2011142233A (ja) * | 2010-01-07 | 2011-07-21 | Denso Corp | 受光素子 |
| JP5763474B2 (ja) * | 2010-08-27 | 2015-08-12 | 株式会社半導体エネルギー研究所 | 光センサ |
| JP2012064822A (ja) * | 2010-09-17 | 2012-03-29 | Panasonic Corp | 固体撮像装置及びその製造方法 |
| CN108701703B (zh) * | 2016-01-08 | 2022-12-06 | 株式会社尼康 | 摄像元件及摄像装置 |
| US20220376128A1 (en) * | 2019-09-27 | 2022-11-24 | Sony Semiconductor Solutions Corporation | Imaging device and electronic apparatus |
| WO2021149413A1 (ja) | 2020-01-23 | 2021-07-29 | パナソニックＩｐマネジメント株式会社 | 撮像装置 |
| JP7636907B2 (ja) * | 2021-02-24 | 2025-02-27 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
| WO2024135561A1 (ja) * | 2022-12-20 | 2024-06-27 | 株式会社ジャパンディスプレイ | 検出装置 |
-
1997
- 1997-09-09 JP JP26088297A patent/JP4183784B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH1187683A (ja) | 1999-03-30 |
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