JP4155574B2 - 半導体素子の実装装置および電子部品 - Google Patents
半導体素子の実装装置および電子部品 Download PDFInfo
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- JP4155574B2 JP4155574B2 JP2004097247A JP2004097247A JP4155574B2 JP 4155574 B2 JP4155574 B2 JP 4155574B2 JP 2004097247 A JP2004097247 A JP 2004097247A JP 2004097247 A JP2004097247 A JP 2004097247A JP 4155574 B2 JP4155574 B2 JP 4155574B2
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
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- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Description
(実施形態1)
図1(a)は、本発明の半導体装置の実装方法および実装装置の実施形態1について説明するための実装装置の要部断面図、図1(b)はこれに用いる半導体装置の拡大断面図、図1(c)は、図1(a)で傾いた半導体素子が修正される様子を説明するための実装装置の要部断面図である。
(実施形態2)
本実施形態2では、図2に示すように、基板11や半導体素子13をクリーム状ハンダ12と共に搬送するベルト16Aには、磁石17Aを設けて、半導体素子13と磁石17Aとが一体となって前加熱部15A、さらに後加熱部15Bから冷却部15Cにベルト搬送されるようにしてもよい。この場合、半導体素子13がリフロー炉14内で磁石17Aと共に移動し、半導体素子13と磁石17Aが共にリフロー炉14を通ってリフロー炉14から外部に出てくるため、上述したような磁界制御手段(磁石17)を設ける必要がない。
(実施形態3)
本発明の半導体素子の実装装置として、光ビーム加熱方式の実装装置を用いることができる。この場合の実装装置を本実施形態3として説明する。
(実施形態4)
本実施形態4では、本発明の半導体素子13およびその作製方法について説明する場合である。
(実施形態5)
本実施形態5では、半導体素子13D内の各磁性体層にS極とN極とを設けて、これらの磁極と実装装置に設けられた磁石17の極性とによって半導体素子13Dの向きを自動的に揃えることが可能な場合である。
(実施形態6)
本実施形態6では、半導体装置(例えば半導体素子13A)を実装した本発明の電子部品について説明する場合である。
11a 金属配線(金属パターン)
12 クリーム状ハンダ(ロウ材)
12a 液化ハンダ
12b 固化ハンダ
13,13A〜13D 半導体素子(半導体装置)
131 半導体層
131A 金合金層(電極)
131B 結晶部
131C 電極
132,132A〜132C 磁性体層(Ni層)
132D1 S極
132D2 N極
13U ウェーハ
14 リフロー炉
15A 前加熱部
15B 加熱部
15C 冷却部
16,16A ベルト
17,17A 磁石
17B,17D 磁石
18 光ビーム照射手段
21 金属ワイヤー(ワイヤー)
22 樹脂モールド(樹脂)
Claims (5)
- 半導体素子の実装方法に用いられる半導体素子の実装装置であって、
前記半導体素子の実装方法は、金属配線が形成された基板上の該金属配線の所定位置にロウ材を塗布して該ロウ材上に、上面および下面の少なくとも一方に磁性体層が形成された半導体素子を配置し、前記ロウ材を加熱して溶融させ、該溶融したロウ材を冷却して固化させることにより前記半導体素子と前記金属配線の前記所定位置とを固定しかつ電気的に接続する半導体素子の実装方法であって、前記ロウ材を溶融させて固化させる際に、前記半導体素子を前記金属配線の前記所定位置側に磁力で引き付けるように磁界を前記半導体素子の前記磁性体層に作用させることを特徴とし、
前記半導体素子の実装装置は、
金属配線が形成された基板上の該金属配線における所定位置にロウ材が塗布されて該ロウ材上に、上面および下面の少なくとも一方に磁性体層が形成された半導体素子が配置された実装体を搬送する搬送部と、
該搬送部にて前記実装体が搬送される間に、前記ロウ材を加熱して溶融する加熱部と、
前記搬送部にて前記実装体が搬送される間に、前記加熱部にて溶融された前記ロウ材を冷却して固化する冷却部と、
前記ロウ材を溶融および固化させる際に、前記半導体素子を前記金属配線の前記所定位置側に磁力で引き付けるように磁界を前記磁性体層に作用させる磁界発生手段と、
を有し、
前記加熱部がリフロー炉内に設けられており、前記搬送部は該リフロー炉内における前記加熱部の下方位置の加熱経路に沿って前記実装体を搬送し、前記磁界発生手段は、該加熱経路の一部または全部の下方位置に設けられている、半導体素子の実装装置。 - 前記磁界発生手段は、前記加熱経路の一部または全部に前記実装体が搬送されてきたときに前記半導体素子に対して磁界を発生させ、前記加熱部から前記冷却部に搬送されるときに該磁界を解除させるように制御する磁界制御手段を有する請求項1に記載の半導体素子の実装装置。
- 前記搬送部は、前記実装体を搭載して搬送する搬送ベルトを有し、該搬送ベルトに、前記磁界発生手段としての磁石が設けられている請求項1に記載の半導体素子の実装装置。
- 前記加熱部は前記ロウ材に光ビームを照射する光ビーム照射手段を有し、少なくとも該光ビーム照射手段によって光ビームが照射される位置の下方に前記磁界発生手段としての磁石が位置している請求項1に記載の半導体素子の実装装置。
- 半導体素子の実装方法を用いて、前記基板上に形成された金属配線の所定位置と、該金属配線の所定位置上にロウ材により固定された半導体素子とが電気的に接続されている電子部品であって、
前記半導体素子の実装方法は、金属配線が形成された基板上の該金属配線の所定位置にロウ材を塗布して該ロウ材上に、上面および下面の少なくとも一方に磁性体層が形成された半導体素子を配置し、前記ロウ材を加熱して溶融させ、該溶融したロウ材を冷却して固化させることにより前記半導体素子と前記金属配線の前記所定位置とを固定しかつ電気的に接続する半導体素子の実装方法であって、前記ロウ材を溶融させて固化させる際に、前記半導体素子を前記金属配線の前記所定位置側に磁力で引き付けるように磁界を前記半導体素子の前記磁性体層に作用させることを特徴とし、
前記基板上に形成された他の金属配線の所定位置と、前記半導体素子の上部に形成された電極部とがワイヤーにより電気的に接続されている、電子部品。
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KR101029209B1 (ko) | 2006-07-06 | 2011-04-12 | 가부시끼 가이샤 구보다 | 변속 전동 장치 |
DE102012012879B3 (de) * | 2012-06-28 | 2013-09-19 | Mühlbauer Ag | Thermokompressionsvorrichtung und Verfahren zum Verbinden elektrischer Bauteile mit einem Substrat |
JP2015185762A (ja) * | 2014-03-25 | 2015-10-22 | スタンレー電気株式会社 | 半導体発光装置の製造方法及び製造装置 |
DE102020114485A1 (de) | 2020-05-29 | 2021-12-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung eines elektronischen bauelements und elektronisches bauelement |
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