JP4145075B2 - 感放射線性樹脂組成物 - Google Patents

感放射線性樹脂組成物 Download PDF

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Publication number
JP4145075B2
JP4145075B2 JP2002152582A JP2002152582A JP4145075B2 JP 4145075 B2 JP4145075 B2 JP 4145075B2 JP 2002152582 A JP2002152582 A JP 2002152582A JP 2002152582 A JP2002152582 A JP 2002152582A JP 4145075 B2 JP4145075 B2 JP 4145075B2
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JP
Japan
Prior art keywords
group
carbon atoms
general formula
represented
substituent
Prior art date
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Expired - Lifetime
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JP2002152582A
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English (en)
Japanese (ja)
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JP2003345023A5 (enExample
JP2003345023A (ja
Inventor
一也 上西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP2002152582A priority Critical patent/JP4145075B2/ja
Priority to EP03011176A priority patent/EP1367439B1/en
Priority to US10/444,965 priority patent/US7179579B2/en
Publication of JP2003345023A publication Critical patent/JP2003345023A/ja
Publication of JP2003345023A5 publication Critical patent/JP2003345023A5/ja
Application granted granted Critical
Publication of JP4145075B2 publication Critical patent/JP4145075B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2002152582A 2002-05-27 2002-05-27 感放射線性樹脂組成物 Expired - Lifetime JP4145075B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2002152582A JP4145075B2 (ja) 2002-05-27 2002-05-27 感放射線性樹脂組成物
EP03011176A EP1367439B1 (en) 2002-05-27 2003-05-27 Radiation-sensitive composition
US10/444,965 US7179579B2 (en) 2002-05-27 2003-05-27 Radiation-sensitive composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002152582A JP4145075B2 (ja) 2002-05-27 2002-05-27 感放射線性樹脂組成物

Publications (3)

Publication Number Publication Date
JP2003345023A JP2003345023A (ja) 2003-12-03
JP2003345023A5 JP2003345023A5 (enExample) 2005-09-29
JP4145075B2 true JP4145075B2 (ja) 2008-09-03

Family

ID=29417150

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002152582A Expired - Lifetime JP4145075B2 (ja) 2002-05-27 2002-05-27 感放射線性樹脂組成物

Country Status (3)

Country Link
US (1) US7179579B2 (enExample)
EP (1) EP1367439B1 (enExample)
JP (1) JP4145075B2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4300131B2 (ja) * 2004-02-16 2009-07-22 富士フイルム株式会社 液浸プロセス用化学増幅型レジスト組成物及びそれを用いたパターン形成方法
JP4157497B2 (ja) 2004-06-11 2008-10-01 株式会社東芝 感光性組成物およびそれを用いたパターン形成方法
JP4452563B2 (ja) * 2004-06-14 2010-04-21 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4191103B2 (ja) 2004-07-02 2008-12-03 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
US7504193B2 (en) * 2004-09-02 2009-03-17 Fujifilm Corporation Positive resist composition and pattern forming method using the same
JP4568662B2 (ja) * 2004-09-02 2010-10-27 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
TWI392969B (zh) 2005-03-22 2013-04-11 Fujifilm Corp 正型光阻組成物及使用它之圖案形成方法
JP4621525B2 (ja) * 2005-03-30 2011-01-26 富士フイルム株式会社 Ｅｕｖ露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4580841B2 (ja) * 2005-08-16 2010-11-17 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4682026B2 (ja) * 2005-11-25 2011-05-11 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4288518B2 (ja) * 2006-07-28 2009-07-01 信越化学工業株式会社 ラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法
JP4871693B2 (ja) * 2006-09-29 2012-02-08 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法
KR20080064456A (ko) * 2007-01-05 2008-07-09 주식회사 하이닉스반도체 반도체 소자의 미세 패턴 형성 방법
US7604920B2 (en) * 2007-08-07 2009-10-20 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition, method of forming resist pattern, polymeric compound, and compound
JP5557550B2 (ja) * 2009-02-20 2014-07-23 富士フイルム株式会社 電子線又はｅｕｖ光を用いた有機溶剤系現像又は多重現像パターン形成方法
JP5829795B2 (ja) * 2009-03-31 2015-12-09 住友化学株式会社 化学増幅型フォトレジスト組成物
JP5364443B2 (ja) * 2009-05-20 2013-12-11 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物
JP6175226B2 (ja) * 2012-09-28 2017-08-02 富士フイルム株式会社 パターン形成方法、半導体製造用の感活性光線性又は感放射線性樹脂組成物、及び電子デバイスの製造方法
JP2017178791A (ja) * 2016-03-28 2017-10-05 Tdk株式会社 スルホニウム塩、リチウム二次電池用電解液およびこれを用いたリチウム二次電池
KR102259626B1 (ko) * 2016-08-30 2021-06-02 후지필름 가부시키가이샤 감활성광선성 또는 감방사선성 수지 조성물, 감활성광선성 또는 감방사선성막, 패턴 형성 방법, 및 전자 디바이스의 제조 방법
WO2020121967A1 (ja) * 2018-12-12 2020-06-18 Jsr株式会社 感光性樹脂組成物、レジストパターン膜の製造方法、およびメッキ造形物の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05121312A (ja) 1991-10-25 1993-05-18 Nippon Telegr & Teleph Corp <Ntt> パタン形成法
JPH05136026A (ja) 1991-11-14 1993-06-01 Hitachi Ltd パターン形成方法
JP2691865B2 (ja) 1994-03-18 1997-12-17 株式会社ソルテック 極紫外線縮小投影露光装置
WO2000001684A1 (en) * 1998-07-03 2000-01-13 Nec Corporation (meth)acrylate derivatives bearing lactone structure, polymers, photoresist compositions and process of forming patterns with the same
JP2000347411A (ja) 1999-06-08 2000-12-15 Matsushita Electric Ind Co Ltd パターン形成材料およびパターン形成方法
JP3812622B2 (ja) * 1999-09-17 2006-08-23 信越化学工業株式会社 レジスト材料及びパターン形成方法
US6727036B2 (en) * 1999-12-27 2004-04-27 Fuji Photo Film Co., Ltd. Positive-working radiation-sensitive composition
CN1210623C (zh) * 2000-04-04 2005-07-13 住友化学工业株式会社 化学放大型正光刻胶组合物
JP2001328964A (ja) 2000-05-19 2001-11-27 Tokyo Ohka Kogyo Co Ltd 新規多環式不飽和炭化水素誘導体及びその製造方法
US20020051932A1 (en) 2000-05-31 2002-05-02 Shipley Company, L.L.C. Photoresists for imaging with high energy radiation
JP3628939B2 (ja) * 2000-06-27 2005-03-16 松下電器産業株式会社 露光方法及び露光装置
EP1179750B1 (en) 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
JP4240857B2 (ja) * 2001-09-04 2009-03-18 富士フイルム株式会社 ポジ型レジスト組成物

Also Published As

Publication number Publication date
US20040033437A1 (en) 2004-02-19
US7179579B2 (en) 2007-02-20
EP1367439A1 (en) 2003-12-03
EP1367439B1 (en) 2012-08-01
JP2003345023A (ja) 2003-12-03

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