JP4137454B2 - 発光装置、電子機器及び発光装置の作製方法 - Google Patents

発光装置、電子機器及び発光装置の作製方法 Download PDF

Info

Publication number
JP4137454B2
JP4137454B2 JP2002008184A JP2002008184A JP4137454B2 JP 4137454 B2 JP4137454 B2 JP 4137454B2 JP 2002008184 A JP2002008184 A JP 2002008184A JP 2002008184 A JP2002008184 A JP 2002008184A JP 4137454 B2 JP4137454 B2 JP 4137454B2
Authority
JP
Japan
Prior art keywords
insulating film
film
emitting device
electrode
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2002008184A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002311857A5 (enrdf_load_stackoverflow
JP2002311857A (ja
Inventor
舜平 山崎
潤 小山
達也 荒尾
宗広 浅見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2002008184A priority Critical patent/JP4137454B2/ja
Publication of JP2002311857A publication Critical patent/JP2002311857A/ja
Publication of JP2002311857A5 publication Critical patent/JP2002311857A5/ja
Application granted granted Critical
Publication of JP4137454B2 publication Critical patent/JP4137454B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2002008184A 2001-01-17 2002-01-17 発光装置、電子機器及び発光装置の作製方法 Expired - Lifetime JP4137454B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2002008184A JP4137454B2 (ja) 2001-01-17 2002-01-17 発光装置、電子機器及び発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001-8379 2001-01-17
JP2001008379 2001-01-17
JP2002008184A JP4137454B2 (ja) 2001-01-17 2002-01-17 発光装置、電子機器及び発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002311857A JP2002311857A (ja) 2002-10-25
JP2002311857A5 JP2002311857A5 (enrdf_load_stackoverflow) 2005-08-11
JP4137454B2 true JP4137454B2 (ja) 2008-08-20

Family

ID=26607805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002008184A Expired - Lifetime JP4137454B2 (ja) 2001-01-17 2002-01-17 発光装置、電子機器及び発光装置の作製方法

Country Status (1)

Country Link
JP (1) JP4137454B2 (enrdf_load_stackoverflow)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4636487B2 (ja) * 2003-01-08 2011-02-23 サムスン エレクトロニクス カンパニー リミテッド 薄膜トランジスタ表示板の製造方法
JP4702516B2 (ja) 2003-05-07 2011-06-15 エルジー エレクトロニクス インコーポレイティド 有機ｅｌ素子及びその製造方法
JP3965583B2 (ja) * 2003-09-01 2007-08-29 カシオ計算機株式会社 表示画素及び表示装置
US7619258B2 (en) * 2004-03-16 2009-11-17 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2006030635A (ja) * 2004-07-16 2006-02-02 Sony Corp 表示装置
US7791270B2 (en) * 2004-09-17 2010-09-07 Semiconductor Energy Laboratory Co., Ltd Light-emitting device with reduced deterioration of periphery
TWI429327B (zh) * 2005-06-30 2014-03-01 Semiconductor Energy Lab 半導體裝置、顯示裝置、及電子設備
CN100483232C (zh) 2006-05-23 2009-04-29 北京京东方光电科技有限公司 一种tft lcd阵列基板结构及其制造方法
US7863612B2 (en) * 2006-07-21 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Display device and semiconductor device
JP4934599B2 (ja) 2007-01-29 2012-05-16 キヤノン株式会社 アクティブマトリクス表示装置
JP2008257086A (ja) * 2007-04-09 2008-10-23 Sony Corp 表示装置、表示装置の製造方法および電子機器
JP2010019950A (ja) * 2008-07-09 2010-01-28 Seiko Epson Corp 電気光学装置および電子機器
EP2284891B1 (en) * 2009-08-07 2019-07-24 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5778960B2 (ja) * 2011-03-29 2015-09-16 株式会社Ｊｏｌｅｄ 表示パネル、表示装置および電子機器
KR101833235B1 (ko) * 2011-07-14 2018-04-16 삼성디스플레이 주식회사 박막 트랜지스터 어레이 기판, 이를 포함하는 유기 발광 표시 장치 및 그 제조 방법
KR20130089044A (ko) * 2012-02-01 2013-08-09 삼성디스플레이 주식회사 반도체 장치 및 그를 구비하는 평판표시장치
KR102060732B1 (ko) * 2013-04-23 2019-12-31 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102273443B1 (ko) * 2013-12-05 2021-07-07 엘지디스플레이 주식회사 유기전계 발광소자
KR102161600B1 (ko) * 2013-12-17 2020-10-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
KR102262772B1 (ko) * 2013-12-30 2021-06-08 엘지디스플레이 주식회사 유기전계발광표시장치
KR102364387B1 (ko) * 2014-07-04 2022-02-18 삼성디스플레이 주식회사 유기 발광 표시 장치
JP6432222B2 (ja) * 2014-09-03 2018-12-05 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置および電子機器
KR102297075B1 (ko) * 2014-11-14 2021-09-02 엘지디스플레이 주식회사 협 베젤 구조를 갖는 대면적 유기발광 다이오드 표시장치
US10224386B2 (en) * 2016-09-23 2019-03-05 Apple Inc. Display with power supply mesh
JP7048292B2 (ja) * 2017-12-14 2022-04-05 株式会社ジャパンディスプレイ 有機ｅｌ表示装置
JP6687068B2 (ja) * 2018-08-13 2020-04-22 セイコーエプソン株式会社 発光装置、および電子機器
JP6822450B2 (ja) * 2018-08-13 2021-01-27 セイコーエプソン株式会社 発光装置、および電子機器
CN112582381B (zh) * 2020-12-10 2023-09-26 武汉华星光电半导体显示技术有限公司 触控显示面板及其制备方法
KR20230032187A (ko) * 2021-08-30 2023-03-07 엘지디스플레이 주식회사 산화물 반도체를 포함하는 디스플레이 장치
KR20230085519A (ko) * 2021-12-07 2023-06-14 엘지디스플레이 주식회사 발광표시장치 및 이의 제조방법
WO2025032714A1 (ja) * 2023-08-08 2025-02-13 シャープディスプレイテクノロジー株式会社 画素回路基板、画素回路基板の製造方法、及び表示デバイス

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10319872A (ja) * 1997-01-17 1998-12-04 Xerox Corp アクティブマトリクス有機発光ダイオード表示装置
JP4493778B2 (ja) * 1999-01-26 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4514871B2 (ja) * 1999-01-29 2010-07-28 株式会社半導体エネルギー研究所 半導体装置および電子機器
JP4334045B2 (ja) * 1999-02-09 2009-09-16 三洋電機株式会社 エレクトロルミネッセンス表示装置
JP4549475B2 (ja) * 1999-02-12 2010-09-22 株式会社半導体エネルギー研究所 半導体装置、電子機器、および半導体装置の作製方法
JP4372943B2 (ja) * 1999-02-23 2009-11-25 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP4860026B2 (ja) * 1999-03-03 2012-01-25 株式会社半導体エネルギー研究所 表示装置
JP4307635B2 (ja) * 1999-06-22 2009-08-05 株式会社半導体エネルギー研究所 半導体装置の作製方法

Also Published As

Publication number Publication date
JP2002311857A (ja) 2002-10-25

Similar Documents

Publication Publication Date Title
JP4137454B2 (ja) 発光装置、電子機器及び発光装置の作製方法
US10263059B2 (en) Light emitting device
JP6487985B2 (ja) 表示装置
JP5292452B2 (ja) 発光装置、モジュール、及び電子機器
JP2012027479A (ja) 発光装置及び電子機器
JP5127099B2 (ja) 電子装置、表示装置
JP2007179066A (ja) 表示装置及び電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050114

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20050114

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20061211

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20071016

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071214

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20080603

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20080604

R150 Certificate of patent or registration of utility model

Ref document number: 4137454

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110613

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110613

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110613

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120613

Year of fee payment: 4

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120613

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130613

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130613

Year of fee payment: 5

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term