JP4111983B2 - プラズマ処理方法 - Google Patents

プラズマ処理方法 Download PDF

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Publication number
JP4111983B2
JP4111983B2 JP2006531279A JP2006531279A JP4111983B2 JP 4111983 B2 JP4111983 B2 JP 4111983B2 JP 2006531279 A JP2006531279 A JP 2006531279A JP 2006531279 A JP2006531279 A JP 2006531279A JP 4111983 B2 JP4111983 B2 JP 4111983B2
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Japan
Prior art keywords
gas
plasma
generation chamber
plasma generation
reducing
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JP2006531279A
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Japanese (ja)
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JPWO2006025136A1 (ja
Inventor
克弘 山崎
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Publication of JPWO2006025136A1 publication Critical patent/JPWO2006025136A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2006531279A 2004-09-01 2005-05-19 プラズマ処理方法 Active JP4111983B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004254241 2004-09-01
JP2004254241 2004-09-01
PCT/JP2005/009172 WO2006025136A1 (ja) 2004-09-01 2005-05-19 プラズマ処理装置及びプラズマ処理方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008058727A Division JP4682218B2 (ja) 2004-09-01 2008-03-07 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPWO2006025136A1 JPWO2006025136A1 (ja) 2008-05-08
JP4111983B2 true JP4111983B2 (ja) 2008-07-02

Family

ID=35999800

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006531279A Active JP4111983B2 (ja) 2004-09-01 2005-05-19 プラズマ処理方法
JP2008058727A Active JP4682218B2 (ja) 2004-09-01 2008-03-07 プラズマ処理装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008058727A Active JP4682218B2 (ja) 2004-09-01 2008-03-07 プラズマ処理装置

Country Status (5)

Country Link
US (1) US8088296B2 (ko)
EP (1) EP1796154A4 (ko)
JP (2) JP4111983B2 (ko)
KR (1) KR100959981B1 (ko)
WO (1) WO2006025136A1 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4816126B2 (ja) * 2006-02-20 2011-11-16 大日本印刷株式会社 注出具付き包装袋
US8142619B2 (en) 2007-05-11 2012-03-27 Sdc Materials Inc. Shape of cone and air input annulus
US8481449B1 (en) 2007-10-15 2013-07-09 SDCmaterials, Inc. Method and system for forming plug and play oxide catalysts
US9126191B2 (en) 2009-12-15 2015-09-08 SDCmaterials, Inc. Advanced catalysts for automotive applications
US9149797B2 (en) 2009-12-15 2015-10-06 SDCmaterials, Inc. Catalyst production method and system
US8557727B2 (en) 2009-12-15 2013-10-15 SDCmaterials, Inc. Method of forming a catalyst with inhibited mobility of nano-active material
US8652992B2 (en) 2009-12-15 2014-02-18 SDCmaterials, Inc. Pinning and affixing nano-active material
US8803025B2 (en) 2009-12-15 2014-08-12 SDCmaterials, Inc. Non-plugging D.C. plasma gun
US9119309B1 (en) 2009-12-15 2015-08-25 SDCmaterials, Inc. In situ oxide removal, dispersal and drying
US8669202B2 (en) 2011-02-23 2014-03-11 SDCmaterials, Inc. Wet chemical and plasma methods of forming stable PtPd catalysts
JP2014524352A (ja) 2011-08-19 2014-09-22 エスディーシーマテリアルズ， インコーポレイテッド 触媒作用および触媒コンバータに使用するための被覆基材ならびにウォッシュコート組成物で基材を被覆する方法
US9156025B2 (en) 2012-11-21 2015-10-13 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
US9511352B2 (en) 2012-11-21 2016-12-06 SDCmaterials, Inc. Three-way catalytic converter using nanoparticles
JP5684955B1 (ja) * 2013-03-28 2015-03-18 芝浦メカトロニクス株式会社 載置台及びプラズマ処理装置
US9586179B2 (en) 2013-07-25 2017-03-07 SDCmaterials, Inc. Washcoats and coated substrates for catalytic converters and methods of making and using same
CN106061600A (zh) 2013-10-22 2016-10-26 Sdc材料公司 用于重型柴油机的催化剂设计
CA2926135A1 (en) 2013-10-22 2015-04-30 SDCmaterials, Inc. Compositions of lean nox trap
US9687811B2 (en) 2014-03-21 2017-06-27 SDCmaterials, Inc. Compositions for passive NOx adsorption (PNA) systems and methods of making and using same
US9828672B2 (en) * 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
WO2019113351A1 (en) 2017-12-07 2019-06-13 Lam Research Corporation Oxidation resistant protective layer in chamber conditioning
US10760158B2 (en) 2017-12-15 2020-09-01 Lam Research Corporation Ex situ coating of chamber components for semiconductor processing
US11145496B2 (en) * 2018-05-29 2021-10-12 Varian Semiconductor Equipment Associates, Inc. System for using O-rings to apply holding forces

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152333A (ja) 1991-11-26 1993-06-18 Toshiba Corp 液晶表示装置の製造方法
JPH05330283A (ja) 1992-06-02 1993-12-14 Omron Corp 情報カード、情報カード処理装置、情報記録再生方法
JP3198667B2 (ja) 1992-10-22 2001-08-13 ソニー株式会社 レジストの除去方法
JP3231426B2 (ja) 1992-10-28 2001-11-19 富士通株式会社 水素プラズマダウンフロー処理方法及び水素プラズマダウンフロー処理装置
JP3379302B2 (ja) 1995-10-13 2003-02-24 富士通株式会社 プラズマ処理方法
JP3393399B2 (ja) 1996-09-24 2003-04-07 アクセリス テクノロジーズ インコーポレーテッド アッシング方法
US6939795B2 (en) 2002-09-23 2005-09-06 Texas Instruments Incorporated Selective dry etching of tantalum and tantalum nitride
US6360754B2 (en) 1998-03-16 2002-03-26 Vlsi Technology, Inc. Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber
US6201276B1 (en) * 1998-07-14 2001-03-13 Micron Technology, Inc. Method of fabricating semiconductor devices utilizing in situ passivation of dielectric thin films
JP2001335937A (ja) 2000-05-29 2001-12-07 Mitsubishi Heavy Ind Ltd 金属汚染低減方法及びプラズマ装置の再生方法
US6776851B1 (en) 2001-07-11 2004-08-17 Lam Research Corporation In-situ cleaning of a polymer coated plasma processing chamber
JP2003124311A (ja) 2001-10-15 2003-04-25 Hitachi Ltd 半導体装置の製造方法および半導体装置
US6797645B2 (en) * 2002-04-09 2004-09-28 Kwangju Institute Of Science And Technology Method of fabricating gate dielectric for use in semiconductor device having nitridation by ion implantation
JP2004111731A (ja) 2002-09-19 2004-04-08 Toshiba Corp プラズマ処理装置のクリーニング方法
JP3643580B2 (ja) * 2002-11-20 2005-04-27 株式会社東芝 プラズマ処理装置及び半導体製造装置
JP4620964B2 (ja) 2004-04-20 2011-01-26 パナソニック株式会社 金属膜のパターン形成方法

Also Published As

Publication number Publication date
WO2006025136A1 (ja) 2006-03-09
JP4682218B2 (ja) 2011-05-11
US8088296B2 (en) 2012-01-03
EP1796154A1 (en) 2007-06-13
EP1796154A4 (en) 2008-10-22
KR20070060102A (ko) 2007-06-12
JPWO2006025136A1 (ja) 2008-05-08
JP2008182259A (ja) 2008-08-07
KR100959981B1 (ko) 2010-05-27
US20080283498A1 (en) 2008-11-20

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