KR20040007533A - 챔버 내 잔여물의 2단계 플라즈마 세정 - Google Patents
챔버 내 잔여물의 2단계 플라즈마 세정 Download PDFInfo
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- KR20040007533A KR20040007533A KR10-2003-7014377A KR20037014377A KR20040007533A KR 20040007533 A KR20040007533 A KR 20040007533A KR 20037014377 A KR20037014377 A KR 20037014377A KR 20040007533 A KR20040007533 A KR 20040007533A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/06—Cleaning involving contact with liquid using perforated drums in which the article or material is placed
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32963—End-point detection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
파라메터 | 최적의 범위 | 중간범위 | 광범위 |
압력 | 3mT | 2~5mT | <100mT |
TCP 전력 | 1000W | 800~1000W | 800~1500W |
SF6유량 | 50sccm | 50~100sccm | 50~400sccm |
파라메터 | 최적의 범위 | 중간범위 | 광범위 |
압력 | 10mT | 10~40mT | <100mT |
TCP 전력 | 1000W | 800~1000W | 800~1500W |
O2유량 | 100sccm | 100~500sccm | 100~600sccm |
SF6유량(10% O2유량 최대) | 10sccm | (0~10% O2유량 최대) | (0~10% O2유량 최대) |
파라메터 | 최적의 범위 | 중간범위 | 광범위 |
압력 | 10mT | 10~40mT | <100mT |
TCP 전력 | 1000W | 800~1000W | 800~1500W |
O2유량 | 100sccm | 100~500sccm | 100~600sccm |
단계번호 | 1 | 2 | 3A | 3B |
단계 유형 | 안정성 | 실리콘 세정-1 | 탄소 세정-2(O2만) | 탄소 세정-2(O2+불소 혼합물) |
압력 | 3mT | 3mT | 10mT | 10mT |
TCP 전력 | 0 | 1000W | 1000W | 1000W |
바이어스 전압 | 0 | 0 | 0 | 0 |
O2 | N/A | N/A | 100sccm | 100sccm |
SF6 | 50sccm | 50sccm | 10sccm | 10sccm |
불활성 가스 | N/A | N/A | 20sccm | N/A |
완료 근거 | 안정 | 시간 | 시간 | 시간 |
시간(초) | 30 | 17 | 6 | 6 |
Claims (19)
- 식 XyFz의 불소 함유 혼합물의 적어도 약 75%를 포함하는 제1가스 혼합물을 처리챔버 내로 흐르게 하는 단계와,상기 처리챔버의 내부 표면으로부터 실리콘과 실리콘에 의한 혼합물을 제거하는 제1에천트 플라즈마를 제공하기 위해 상기 제1가스 혼합물로부터 플라즈마를 형성하는 단계,적어도 약 50% O2를 함유하는 제2가스 혼합물을 상기 처리챔버 내로 흐르게 하는 단계 및,상기 처리챔버의 내부 표면으로부터 탄소와 탄소에 의한 혼합물을 제거하는 제2에천트 플라즈마를 제공하기 위해 상기 제2가스 혼합물로부터 플라즈마를 형성하는 단계를 구비하여 이루어진 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제1항에 있어서, 상기 불소 함유 혼합물은 본질적으로 NF3와 SF6로 이루어진 그룹으로부터 선택되는 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제2항에 있어서, 상기 불소 함유 혼합물은 SF6인 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제2항에 있어서, 상기 제1가스 혼합물은 상기 불소 함유 혼합물의 적어도 약 90%인 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제4항에 있어서, 상기 제1가스 혼합물은 본질적으로 상기 불소 함유 혼합물로 이루어진 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제1항에 있어서, 상기 제2가스 혼합물은 적어도 약 75% O2인 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제6항에 있어서, 상기 제2가스 혼합물은 적어도 약 90% O2인 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제6항에 있어서, 상기 제2가스 혼합물은 식 XyFz의 불소 함유 혼합물을 포함하는 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제8항에 있어서, 상기 제2가스 혼합물의 상기 불소 함유 혼합물은 본질적으로 NF3및 SF6로 이루어진 그룹으로부터 선택된 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제8항에 있어서, 상기 제2가스 혼합물의 상기 불소 함유 혼합물은 SF6인 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제10항에 있어서, 상기 제2가스 혼합물은 약 90% O2및 10% SF6인 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제6항에 있어서, 상기 제2가스 혼합물은 본질적으로 O2로 이루어진 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제1항에 있어서, 상기 처리챔버의 내부 표면으로부터 실리콘과 실리콘에 의한 혼합물을 제거하는 제1에천트 플라즈마를 제공하기 위해 상기 제1가스 혼합물로부터 플라즈마를 형성하는 동작의 방법은;약 2mT와 5mT 사이의 챔버압력을 유지하는 단계와,상기 처리챔버에 약 1000W의 TCP 전력을 공급하는 단계 및,상기 처리챔버 내로 상기 제1가스 혼합물을 약 50sccm과 40sccm 사이의 유량으로 흐르게 하는 단계를 더 포함한 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제1항에 있어서, 상기 처리챔버 내로 적어도 약 50% O2를 포함하는 제2가스 혼합물을 흐르게 하는 동작의 방법은;상기 처리챔버에 약 10mT와 100mT 사이의 압력을 유지하는 단계와,소정 수준에 도달하기 위한 처리챔버의 내부 표면 상의 탄소에 의한 혼합물에 대한 처리챔버의 내부를 모니터링 하는 단계를 더 포함하는 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 제14항에 있어서, 상기 처리챔버 내로 적어도 약 50% O2를 포함하는 제2가스 혼합물을 흐르게 하는 동작의 방법은;상기 처리챔버 내로 상기 제2가스 혼합물을 약 100sccm과 600sccm 사이의 유량으로 흐르게 하는 단계와,약 800W와 1500W 사이의 TCP 전력을 공급하는 단계를 더 포함하는 것을 특징으로 하는 처리챔버를 세정하기 위한 방법.
- 2개 단계 인-시츄 세정처리를 실행하기 위한 플라즈마 처리시스템에 있어서,처리챔버의 내부 표면 상에 퇴적된 실리콘에 의한 부산물을 제거하는데 최적인 제1세정가스와 상기 처리챔버의 내부 표면 상의 탄소에 의한 부산물을 제거하는데 최적인 제2세정가스를 도입하기 위한 가스 입구와,상기 인-시츄 세정처리의 제1단계를 수행하기 위해 제1처리가스로부터 제1플라즈마를 생성한 후, 상기 제1단계의 완료 즉시 상기 제2세정가스로부터 제2플라즈마를 생성하기 위한 상부 전극을 갖춘 처리챔버와;상기 처리챔버의 출구에 위치되고, 상기 처리가스의 유량에 관계없이 상기 처리챔버 내측의 압력을 조절하기 위한 가변 컨덕턴스 미터,상기 처리챔버와 통신하고 상기 처리챔버에서 수행된 2개 단계 인-시츄 세정처리의 각 단계의 종료점을 검출하기 위한 광방출 분광계(OES) 및;상기 2개 단계 세정처리의 각 단계중 상기 처리챔버를 비우기 위한 펌핑시스템을 구비하여 구성된 것을 특징으로 하는 플라즈마 처리시스템.
- 제16항에 있어서, 상기 제1세정가스는 불소 함유 혼합물이고 상기 제2가스는 산소 함유 혼합물인 것을 특징으로 하는 플라즈마 처리시스템.
- 제16항에 있어서, 상기 OES 모니터는 상기 인-시츄 세정처리의 상기 제1단계의실리콘에 의한 부산물과 상기 인-시츄 세정처리의 상기 제2단계의 탄소에 의한 부산물에 대응하는 파장을 검출하도록 구성된 것을 특징으로 하는 플라즈마 처리시스템.
- 제16항에 있어서, 상기 2개 단계 세정처리는 상기 처리챔버의 각 처리동작 이후 수행되는 것을 특징으로 하는 플라즈마 처리시스템.
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KR20180032153A (ko) * | 2016-09-21 | 2018-03-29 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라스마 처리 방법 |
KR20180036849A (ko) * | 2016-09-30 | 2018-04-10 | 세메스 주식회사 | 기판 처리 장치 및 이의 표면을 안정화시키는 방법 |
KR20190127030A (ko) * | 2018-05-03 | 2019-11-13 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
WO2022216105A1 (ko) * | 2021-04-09 | 2022-10-13 | 주성엔지니어링(주) | 기판 처리 방법 및 기판 처리 장치 |
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TW546707B (en) | 2003-08-11 |
US7028696B2 (en) | 2006-04-18 |
US20030000546A1 (en) | 2003-01-02 |
CN1507502A (zh) | 2004-06-23 |
WO2002090615A1 (en) | 2002-11-14 |
KR100881045B1 (ko) | 2009-01-30 |
US20060130873A1 (en) | 2006-06-22 |
WO2002090615A9 (en) | 2002-12-27 |
CN100410421C (zh) | 2008-08-13 |
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