JP4101511B2 - 発光装置及びその作製方法 - Google Patents
発光装置及びその作製方法 Download PDFInfo
- Publication number
- JP4101511B2 JP4101511B2 JP2001398624A JP2001398624A JP4101511B2 JP 4101511 B2 JP4101511 B2 JP 4101511B2 JP 2001398624 A JP2001398624 A JP 2001398624A JP 2001398624 A JP2001398624 A JP 2001398624A JP 4101511 B2 JP4101511 B2 JP 4101511B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- electrode
- tft
- light
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/441—Interconnections, e.g. scanning lines
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001398624A JP4101511B2 (ja) | 2001-12-27 | 2001-12-27 | 発光装置及びその作製方法 |
| US10/329,953 US6861710B2 (en) | 2001-12-27 | 2002-12-27 | Light emitting device and method of manufacturing the same |
| KR1020020084828A KR100945468B1 (ko) | 2001-12-27 | 2002-12-27 | 발광장치 및 그 제조방법 |
| US11/060,763 US7033848B2 (en) | 2001-12-27 | 2005-02-18 | Light emitting device and method of manufacturing the same |
| US11/276,651 US7492012B2 (en) | 2001-12-27 | 2006-03-09 | Light emitting device and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001398624A JP4101511B2 (ja) | 2001-12-27 | 2001-12-27 | 発光装置及びその作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003197367A JP2003197367A (ja) | 2003-07-11 |
| JP2003197367A5 JP2003197367A5 (https=) | 2005-07-14 |
| JP4101511B2 true JP4101511B2 (ja) | 2008-06-18 |
Family
ID=19189371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001398624A Expired - Lifetime JP4101511B2 (ja) | 2001-12-27 | 2001-12-27 | 発光装置及びその作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US6861710B2 (https=) |
| JP (1) | JP4101511B2 (https=) |
| KR (1) | KR100945468B1 (https=) |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7038377B2 (en) | 2002-01-16 | 2006-05-02 | Seiko Epson Corporation | Display device with a narrow frame |
| JP2003317971A (ja) | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
| CN100370492C (zh) * | 2002-11-27 | 2008-02-20 | 株式会社半导体能源研究所 | 显示装置及电子设备 |
| KR100503129B1 (ko) * | 2002-12-28 | 2005-07-22 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그 제조방법 |
| TWI370700B (en) * | 2003-03-31 | 2012-08-11 | Dainippon Printing Co Ltd | Protective coat and method for manufacturing thereof |
| US7557779B2 (en) * | 2003-06-13 | 2009-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US7161185B2 (en) * | 2003-06-27 | 2007-01-09 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| KR100544123B1 (ko) * | 2003-07-29 | 2006-01-23 | 삼성에스디아이 주식회사 | 평판표시장치 |
| US20050057154A1 (en) * | 2003-07-30 | 2005-03-17 | Optrex Corporation | Organic EL display device and method for fabricating the same |
| US8937580B2 (en) * | 2003-08-08 | 2015-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Driving method of light emitting device and light emitting device |
| US7291967B2 (en) * | 2003-08-29 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting element including a barrier layer and a manufacturing method thereof |
| KR101172466B1 (ko) | 2003-08-29 | 2012-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제작방법 |
| JP4741177B2 (ja) * | 2003-08-29 | 2011-08-03 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US7928654B2 (en) * | 2003-08-29 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing the same |
| JP4683883B2 (ja) * | 2003-08-29 | 2011-05-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
| US7520790B2 (en) * | 2003-09-19 | 2009-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of display device |
| JP4754795B2 (ja) * | 2003-09-19 | 2011-08-24 | 株式会社半導体エネルギー研究所 | 表示装置及び表示装置の作製方法 |
| CN100499035C (zh) * | 2003-10-03 | 2009-06-10 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
| US7205716B2 (en) | 2003-10-20 | 2007-04-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US7902747B2 (en) * | 2003-10-21 | 2011-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide |
| JP4785339B2 (ja) * | 2003-10-24 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US7495257B2 (en) | 2003-12-26 | 2009-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7315047B2 (en) * | 2004-01-26 | 2008-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US7274044B2 (en) * | 2004-01-26 | 2007-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| JP2005216745A (ja) * | 2004-01-30 | 2005-08-11 | Seiko Epson Corp | 有機el表示装置とその製造方法、並びに電子機器 |
| CN1977404B (zh) * | 2004-02-20 | 2010-05-12 | 欧瑞康太阳Ip股份公司(特吕巴赫) | 扩散阻挡层和扩散阻挡层的制造方法 |
| US6956272B2 (en) * | 2004-03-10 | 2005-10-18 | Micron Technology, Inc. | Support frame for semiconductor packages |
| US7423373B2 (en) * | 2004-03-26 | 2008-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| KR100616708B1 (ko) * | 2004-04-12 | 2006-08-28 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 어레이 기판 및 그 제조방법 |
| US7504663B2 (en) * | 2004-05-28 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a floating gate electrode that includes a plurality of particles |
| US8278818B2 (en) * | 2004-06-04 | 2012-10-02 | Samsung Mobile Display Co., Ltd. | Electroluminescent display device and method of fabricating the same |
| KR100667064B1 (ko) * | 2004-06-30 | 2007-01-10 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 형성 방법 |
| KR101080353B1 (ko) | 2004-07-02 | 2011-11-07 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
| US20060024870A1 (en) * | 2004-07-27 | 2006-02-02 | Wen-Chun Wang | Manufacturing method for low temperature polycrystalline silicon cell |
| JP2006054111A (ja) * | 2004-08-12 | 2006-02-23 | Sony Corp | 表示装置 |
| CN1819300B (zh) * | 2004-09-17 | 2010-06-16 | 株式会社半导体能源研究所 | 发光器件 |
| KR100699998B1 (ko) * | 2004-09-23 | 2007-03-26 | 삼성에스디아이 주식회사 | 유기 전계 발광 소자 및 그의 제조 방법 |
| US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
| US8148895B2 (en) | 2004-10-01 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the same |
| KR100611768B1 (ko) * | 2004-10-11 | 2006-08-10 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그 제조방법 |
| KR100683684B1 (ko) * | 2004-10-28 | 2007-02-20 | 삼성에스디아이 주식회사 | 유기박막 트랜지스터를 구비한 유기전계 발광표시장치 |
| KR100683685B1 (ko) * | 2004-10-28 | 2007-02-15 | 삼성에스디아이 주식회사 | 유기박막 트랜지스터를 구비한 유기전계 발광표시장치 및그의 제조방법 |
| US8319714B2 (en) * | 2004-12-22 | 2012-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Display device, and method of operation thereof |
| US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
| US7888702B2 (en) * | 2005-04-15 | 2011-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method of the display device |
| TWI517378B (zh) | 2005-10-17 | 2016-01-11 | 半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| JP4655942B2 (ja) * | 2006-01-16 | 2011-03-23 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法および電子機器 |
| US20070170846A1 (en) * | 2006-01-23 | 2007-07-26 | Choi Dong-Soo | Organic light emitting display and method of fabricating the same |
| JP5160754B2 (ja) * | 2006-01-31 | 2013-03-13 | エルジー ディスプレイ カンパニー リミテッド | El装置 |
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| JP2007273446A (ja) | 2006-03-06 | 2007-10-18 | Seiko Epson Corp | エレクトロルミネッセンス装置 |
| JP4809087B2 (ja) | 2006-03-14 | 2011-11-02 | セイコーエプソン株式会社 | エレクトロルミネッセンス装置、電子機器、およびエレクトロルミネッセンス装置の製造方法 |
| TWI358964B (en) * | 2006-04-12 | 2012-02-21 | Au Optronics Corp | Electroluminescence display element and method for |
| JP5172178B2 (ja) * | 2007-03-15 | 2013-03-27 | 三菱電機株式会社 | 薄膜トランジスタ、それを用いた表示装置、及びそれらの製造方法 |
| JP5359003B2 (ja) * | 2008-04-04 | 2013-12-04 | コニカミノルタ株式会社 | 有機薄膜トランジスタ装置、およびその製造方法 |
| JP5478954B2 (ja) * | 2008-07-11 | 2014-04-23 | キヤノン株式会社 | 有機エレクトロルミネッセンス表示装置 |
| KR100964230B1 (ko) * | 2008-08-27 | 2010-06-17 | 삼성모바일디스플레이주식회사 | 평판표시장치 및 그 제조방법 |
| KR101233348B1 (ko) | 2010-06-09 | 2013-02-14 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
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| KR101339000B1 (ko) * | 2011-12-14 | 2013-12-09 | 엘지디스플레이 주식회사 | 유기전계발광 표시소자 및 그 제조방법 |
| KR20250154556A (ko) * | 2012-07-20 | 2025-10-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치, 및 표시 장치를 포함하는 전자 장치 |
| KR102266448B1 (ko) | 2014-07-29 | 2021-06-16 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 이의 제조 방법 |
| KR102326313B1 (ko) * | 2014-11-20 | 2021-11-15 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN105633304B (zh) * | 2016-03-23 | 2018-03-06 | 深圳市华星光电技术有限公司 | Oled基板的封装方法与oled封装结构 |
| KR102343573B1 (ko) * | 2017-05-26 | 2021-12-28 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 |
| JP7206475B2 (ja) | 2018-08-31 | 2023-01-18 | 日亜化学工業株式会社 | レンズ及び発光装置並びにそれらの製造方法 |
| JP6897641B2 (ja) * | 2018-08-31 | 2021-07-07 | 日亜化学工業株式会社 | レンズ及び発光装置並びにそれらの製造方法 |
| KR102733083B1 (ko) | 2018-12-31 | 2024-11-22 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 |
| KR102861771B1 (ko) * | 2021-05-25 | 2025-09-22 | 삼성디스플레이 주식회사 | 표시 패널, 및 이를 포함하는 전자 장치 |
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| TWI226205B (en) * | 2000-03-27 | 2005-01-01 | Semiconductor Energy Lab | Self-light emitting device and method of manufacturing the same |
| US6706544B2 (en) * | 2000-04-19 | 2004-03-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and fabricating method thereof |
| US6371121B1 (en) * | 2000-05-17 | 2002-04-16 | O.R. Solutions, Inc. | Remote controlled thermal treatment system and method for controlling the system remotely to thermally treat sterile surgical liquid |
| US6860271B2 (en) * | 2000-05-17 | 2005-03-01 | O.R. Solutions, Inc. | Thermal treatment system and method for controlling the system to thermally treat sterile surgical liquid |
| US6872604B2 (en) * | 2000-06-05 | 2005-03-29 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating a light emitting device |
| US6664732B2 (en) | 2000-10-26 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
| TW522577B (en) * | 2000-11-10 | 2003-03-01 | Semiconductor Energy Lab | Light emitting device |
| US6746439B2 (en) * | 2001-04-19 | 2004-06-08 | Jay Alan Lenker | Method and apparatus for fluid administration with distributed heating |
| JP4166455B2 (ja) * | 2001-10-01 | 2008-10-15 | 株式会社半導体エネルギー研究所 | 偏光フィルム及び発光装置 |
| WO2003030971A1 (de) * | 2001-10-04 | 2003-04-17 | Tecpharma Licensing Ag | Lebensdauerüberwachung für ein injektionsgerät |
| US7042024B2 (en) * | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
| CN100380673C (zh) * | 2001-11-09 | 2008-04-09 | 株式会社半导体能源研究所 | 发光设备及其制造方法 |
| US6822264B2 (en) * | 2001-11-16 | 2004-11-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
-
2001
- 2001-12-27 JP JP2001398624A patent/JP4101511B2/ja not_active Expired - Lifetime
-
2002
- 2002-12-27 KR KR1020020084828A patent/KR100945468B1/ko not_active Expired - Fee Related
- 2002-12-27 US US10/329,953 patent/US6861710B2/en not_active Expired - Lifetime
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2005
- 2005-02-18 US US11/060,763 patent/US7033848B2/en not_active Expired - Fee Related
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Also Published As
| Publication number | Publication date |
|---|---|
| US6861710B2 (en) | 2005-03-01 |
| US20060151789A1 (en) | 2006-07-13 |
| US7033848B2 (en) | 2006-04-25 |
| KR20030057408A (ko) | 2003-07-04 |
| US7492012B2 (en) | 2009-02-17 |
| US20030127651A1 (en) | 2003-07-10 |
| US20050156172A1 (en) | 2005-07-21 |
| JP2003197367A (ja) | 2003-07-11 |
| KR100945468B1 (ko) | 2010-03-05 |
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