JP4048837B2 - イオン源の運転方法およびイオン源装置 - Google Patents

イオン源の運転方法およびイオン源装置 Download PDF

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Publication number
JP4048837B2
JP4048837B2 JP2002150659A JP2002150659A JP4048837B2 JP 4048837 B2 JP4048837 B2 JP 4048837B2 JP 2002150659 A JP2002150659 A JP 2002150659A JP 2002150659 A JP2002150659 A JP 2002150659A JP 4048837 B2 JP4048837 B2 JP 4048837B2
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JP
Japan
Prior art keywords
ion source
cavity
support
plasma generation
ion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2002150659A
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English (en)
Japanese (ja)
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JP2003346672A5 (enExample
JP2003346672A (ja
Inventor
俊昭 木ノ山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissin Ion Equipment Co Ltd
Original Assignee
Nissin Ion Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissin Ion Equipment Co Ltd filed Critical Nissin Ion Equipment Co Ltd
Priority to JP2002150659A priority Critical patent/JP4048837B2/ja
Priority to KR1020030031075A priority patent/KR100548931B1/ko
Priority to US10/442,283 priority patent/US6844556B2/en
Priority to CNB031368549A priority patent/CN1257524C/zh
Priority to TW092113980A priority patent/TWI242789B/zh
Publication of JP2003346672A publication Critical patent/JP2003346672A/ja
Publication of JP2003346672A5 publication Critical patent/JP2003346672A5/ja
Application granted granted Critical
Publication of JP4048837B2 publication Critical patent/JP4048837B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/04—Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
JP2002150659A 2002-05-24 2002-05-24 イオン源の運転方法およびイオン源装置 Expired - Fee Related JP4048837B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002150659A JP4048837B2 (ja) 2002-05-24 2002-05-24 イオン源の運転方法およびイオン源装置
KR1020030031075A KR100548931B1 (ko) 2002-05-24 2003-05-16 이온원, 그 운전방법 및 이온원 장치
US10/442,283 US6844556B2 (en) 2002-05-24 2003-05-21 Ion source, method of operating the same, and ion source system
CNB031368549A CN1257524C (zh) 2002-05-24 2003-05-23 操作离子源的方法以及离子源系统
TW092113980A TWI242789B (en) 2002-05-24 2003-05-23 Ion source, method of operating the same, and ion source system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002150659A JP4048837B2 (ja) 2002-05-24 2002-05-24 イオン源の運転方法およびイオン源装置

Publications (3)

Publication Number Publication Date
JP2003346672A JP2003346672A (ja) 2003-12-05
JP2003346672A5 JP2003346672A5 (enExample) 2005-02-17
JP4048837B2 true JP4048837B2 (ja) 2008-02-20

Family

ID=29545332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002150659A Expired - Fee Related JP4048837B2 (ja) 2002-05-24 2002-05-24 イオン源の運転方法およびイオン源装置

Country Status (5)

Country Link
US (1) US6844556B2 (enExample)
JP (1) JP4048837B2 (enExample)
KR (1) KR100548931B1 (enExample)
CN (1) CN1257524C (enExample)
TW (1) TWI242789B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7122966B2 (en) * 2004-12-16 2006-10-17 General Electric Company Ion source apparatus and method
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
US8664561B2 (en) * 2009-07-01 2014-03-04 Varian Semiconductor Equipment Associates, Inc. System and method for selectively controlling ion composition of ion sources
US8642974B2 (en) 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US9134074B2 (en) 2012-10-04 2015-09-15 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for thermal control of ion sources and sputtering targets
JP2014082150A (ja) * 2012-10-18 2014-05-08 Nissin Ion Equipment Co Ltd プラズマ源
US10925146B1 (en) * 2019-12-17 2021-02-16 Applied Materials, Inc. Ion source chamber with embedded heater
CN111668080B (zh) * 2020-04-30 2021-06-08 北京师范大学 一种金属离子源发射装置
US12463001B2 (en) 2020-12-08 2025-11-04 Shine Technologies, Llc Isothermal ion source with auxiliary heaters
KR102866838B1 (ko) * 2023-06-22 2025-10-01 (주)아이네쓰 고효율 냉각 성능을 갖는 이온 빔 소스

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198469A (ja) 1987-10-09 1989-04-17 Kondo Unyu Kiko Kk 焙煎機における炒豆の冷却装置
JP2984681B1 (ja) 1999-02-16 1999-11-29 広島日本電気株式会社 ベ―パライザによる気化方法及びこれに用いるベ―パライザ
US6288403B1 (en) 1999-10-11 2001-09-11 Axcelis Technologies, Inc. Decaborane ionizer
EP1245036B1 (en) 1999-12-13 2013-06-19 Semequip, Inc. Ion implantation ion source
US6452338B1 (en) * 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer

Also Published As

Publication number Publication date
CN1257524C (zh) 2006-05-24
CN1461036A (zh) 2003-12-10
JP2003346672A (ja) 2003-12-05
KR20030091051A (ko) 2003-12-01
TW200401323A (en) 2004-01-16
TWI242789B (en) 2005-11-01
US20030218429A1 (en) 2003-11-27
US6844556B2 (en) 2005-01-18
KR100548931B1 (ko) 2006-02-02

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