KR100548931B1 - 이온원, 그 운전방법 및 이온원 장치 - Google Patents

이온원, 그 운전방법 및 이온원 장치 Download PDF

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Publication number
KR100548931B1
KR100548931B1 KR1020030031075A KR20030031075A KR100548931B1 KR 100548931 B1 KR100548931 B1 KR 100548931B1 KR 1020030031075 A KR1020030031075 A KR 1020030031075A KR 20030031075 A KR20030031075 A KR 20030031075A KR 100548931 B1 KR100548931 B1 KR 100548931B1
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KR
South Korea
Prior art keywords
ion source
cavity
support
plasma
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020030031075A
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English (en)
Korean (ko)
Other versions
KR20030091051A (ko
Inventor
키노야마토시아키
Original Assignee
닛신덴키 가부시키 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 닛신덴키 가부시키 가이샤 filed Critical 닛신덴키 가부시키 가이샤
Publication of KR20030091051A publication Critical patent/KR20030091051A/ko
Application granted granted Critical
Publication of KR100548931B1 publication Critical patent/KR100548931B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/04—Ion sources; Ion guns using reflex discharge, e.g. Penning ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
KR1020030031075A 2002-05-24 2003-05-16 이온원, 그 운전방법 및 이온원 장치 Expired - Fee Related KR100548931B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002150659A JP4048837B2 (ja) 2002-05-24 2002-05-24 イオン源の運転方法およびイオン源装置
JPJP-P-2002-00150659 2002-05-24

Publications (2)

Publication Number Publication Date
KR20030091051A KR20030091051A (ko) 2003-12-01
KR100548931B1 true KR100548931B1 (ko) 2006-02-02

Family

ID=29545332

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020030031075A Expired - Fee Related KR100548931B1 (ko) 2002-05-24 2003-05-16 이온원, 그 운전방법 및 이온원 장치

Country Status (5)

Country Link
US (1) US6844556B2 (enExample)
JP (1) JP4048837B2 (enExample)
KR (1) KR100548931B1 (enExample)
CN (1) CN1257524C (enExample)
TW (1) TWI242789B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7122966B2 (en) * 2004-12-16 2006-10-17 General Electric Company Ion source apparatus and method
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
US8664561B2 (en) * 2009-07-01 2014-03-04 Varian Semiconductor Equipment Associates, Inc. System and method for selectively controlling ion composition of ion sources
US8642974B2 (en) * 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US9134074B2 (en) 2012-10-04 2015-09-15 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for thermal control of ion sources and sputtering targets
JP2014082150A (ja) * 2012-10-18 2014-05-08 Nissin Ion Equipment Co Ltd プラズマ源
US10925146B1 (en) * 2019-12-17 2021-02-16 Applied Materials, Inc. Ion source chamber with embedded heater
CN111668080B (zh) * 2020-04-30 2021-06-08 北京师范大学 一种金属离子源发射装置
EP4260360A4 (en) * 2020-12-08 2024-05-22 SHINE Technologies, LLC ISOTHERMAL ION SOURCE WITH AUXILIARY HEATING ELEMENTS
KR102866838B1 (ko) * 2023-06-22 2025-10-01 (주)아이네쓰 고효율 냉각 성능을 갖는 이온 빔 소스

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198469A (ja) 1987-10-09 1989-04-17 Kondo Unyu Kiko Kk 焙煎機における炒豆の冷却装置
JP2984681B1 (ja) 1999-02-16 1999-11-29 広島日本電気株式会社 ベ―パライザによる気化方法及びこれに用いるベ―パライザ
US6288403B1 (en) 1999-10-11 2001-09-11 Axcelis Technologies, Inc. Decaborane ionizer
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
TW521295B (en) 1999-12-13 2003-02-21 Semequip Inc Ion implantation ion source, system and method

Also Published As

Publication number Publication date
JP2003346672A (ja) 2003-12-05
US20030218429A1 (en) 2003-11-27
US6844556B2 (en) 2005-01-18
TW200401323A (en) 2004-01-16
JP4048837B2 (ja) 2008-02-20
CN1257524C (zh) 2006-05-24
KR20030091051A (ko) 2003-12-01
CN1461036A (zh) 2003-12-10
TWI242789B (en) 2005-11-01

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