JP2003346672A5 - - Google Patents

Download PDF

Info

Publication number
JP2003346672A5
JP2003346672A5 JP2002150659A JP2002150659A JP2003346672A5 JP 2003346672 A5 JP2003346672 A5 JP 2003346672A5 JP 2002150659 A JP2002150659 A JP 2002150659A JP 2002150659 A JP2002150659 A JP 2002150659A JP 2003346672 A5 JP2003346672 A5 JP 2003346672A5
Authority
JP
Japan
Prior art keywords
ion source
cavity
support
vicinity
plasma generation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2002150659A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003346672A (ja
JP4048837B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2002150659A external-priority patent/JP4048837B2/ja
Priority to JP2002150659A priority Critical patent/JP4048837B2/ja
Priority to KR1020030031075A priority patent/KR100548931B1/ko
Priority to US10/442,283 priority patent/US6844556B2/en
Priority to CNB031368549A priority patent/CN1257524C/zh
Priority to TW092113980A priority patent/TWI242789B/zh
Publication of JP2003346672A publication Critical patent/JP2003346672A/ja
Publication of JP2003346672A5 publication Critical patent/JP2003346672A5/ja
Publication of JP4048837B2 publication Critical patent/JP4048837B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2002150659A 2002-05-24 2002-05-24 イオン源の運転方法およびイオン源装置 Expired - Fee Related JP4048837B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2002150659A JP4048837B2 (ja) 2002-05-24 2002-05-24 イオン源の運転方法およびイオン源装置
KR1020030031075A KR100548931B1 (ko) 2002-05-24 2003-05-16 이온원, 그 운전방법 및 이온원 장치
US10/442,283 US6844556B2 (en) 2002-05-24 2003-05-21 Ion source, method of operating the same, and ion source system
TW092113980A TWI242789B (en) 2002-05-24 2003-05-23 Ion source, method of operating the same, and ion source system
CNB031368549A CN1257524C (zh) 2002-05-24 2003-05-23 操作离子源的方法以及离子源系统

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002150659A JP4048837B2 (ja) 2002-05-24 2002-05-24 イオン源の運転方法およびイオン源装置

Publications (3)

Publication Number Publication Date
JP2003346672A JP2003346672A (ja) 2003-12-05
JP2003346672A5 true JP2003346672A5 (enExample) 2005-02-17
JP4048837B2 JP4048837B2 (ja) 2008-02-20

Family

ID=29545332

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002150659A Expired - Fee Related JP4048837B2 (ja) 2002-05-24 2002-05-24 イオン源の運転方法およびイオン源装置

Country Status (5)

Country Link
US (1) US6844556B2 (enExample)
JP (1) JP4048837B2 (enExample)
KR (1) KR100548931B1 (enExample)
CN (1) CN1257524C (enExample)
TW (1) TWI242789B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7122966B2 (en) * 2004-12-16 2006-10-17 General Electric Company Ion source apparatus and method
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
US8664561B2 (en) * 2009-07-01 2014-03-04 Varian Semiconductor Equipment Associates, Inc. System and method for selectively controlling ion composition of ion sources
US8642974B2 (en) * 2009-12-30 2014-02-04 Fei Company Encapsulation of electrodes in solid media for use in conjunction with fluid high voltage isolation
US9134074B2 (en) 2012-10-04 2015-09-15 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for thermal control of ion sources and sputtering targets
JP2014082150A (ja) * 2012-10-18 2014-05-08 Nissin Ion Equipment Co Ltd プラズマ源
US10925146B1 (en) * 2019-12-17 2021-02-16 Applied Materials, Inc. Ion source chamber with embedded heater
CN111668080B (zh) * 2020-04-30 2021-06-08 北京师范大学 一种金属离子源发射装置
EP4260360A4 (en) * 2020-12-08 2024-05-22 SHINE Technologies, LLC ISOTHERMAL ION SOURCE WITH AUXILIARY HEATING ELEMENTS
KR102866838B1 (ko) * 2023-06-22 2025-10-01 (주)아이네쓰 고효율 냉각 성능을 갖는 이온 빔 소스

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0198469A (ja) 1987-10-09 1989-04-17 Kondo Unyu Kiko Kk 焙煎機における炒豆の冷却装置
JP2984681B1 (ja) 1999-02-16 1999-11-29 広島日本電気株式会社 ベ―パライザによる気化方法及びこれに用いるベ―パライザ
US6288403B1 (en) 1999-10-11 2001-09-11 Axcelis Technologies, Inc. Decaborane ionizer
US6452338B1 (en) 1999-12-13 2002-09-17 Semequip, Inc. Electron beam ion source with integral low-temperature vaporizer
TW521295B (en) 1999-12-13 2003-02-21 Semequip Inc Ion implantation ion source, system and method

Similar Documents

Publication Publication Date Title
US7781743B2 (en) Charged particle beam system and method for evacuation of the system
JP2003346672A5 (enExample)
US20090214800A1 (en) Apparatus for and method of forming carbon nanotube
FR2923649B1 (fr) Chambre de coupure et disjoncteur equipe d'une telle chambre de coupure.
WO2006091588A3 (en) Etching chamber with subchamber
JP6078646B2 (ja) イオンミリング装置、及びイオンミリング装置を用いた加工方法
WO2008123301A1 (ja) 異極像結晶を用いたｘ線発生装置
JP4048837B2 (ja) イオン源の運転方法およびイオン源装置
JP2013243098A (ja) フィラメント交換器及びフィラメント交換構造
JP2011065898A (ja) イオン発生装置のソースハウジングに堆積したフッ素化合物を除去する方法およびイオン発生装置
RU2002119440A (ru) Способ получения углеродных нанотрубок
JP2003077897A5 (enExample)
JPS63175427A (ja) ドライエツチング装置
JP3895919B2 (ja) クリーニング装置
JP6464048B2 (ja) 電子顕微鏡
JP6879663B2 (ja) 荷電粒子ビーム装置
JP4951906B2 (ja) ガラス母材の製造方法
JP2011062660A (ja) 真空排気装置
JP2010144233A (ja) 真空処理装置の脱ガス処理装置および真空処理装置
OGATA et al. Analysis of low thermal expansion mechanism of preferably oriented cordierite ceramics
JP2007141633A (ja) 電子顕微鏡
JP2587522B2 (ja) 極高真空環境の発生方法
RU98110666A (ru) Способ обработки фольги
JP2006095553A (ja) 電子ビーム溶接装置
JP2007103600A (ja) プラズマ処理装置及びプラズマ処理方法