JP4036757B2 - 能動デバイス、電界効果トランジスタ、電気回路及び布地 - Google Patents

能動デバイス、電界効果トランジスタ、電気回路及び布地 Download PDF

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Publication number
JP4036757B2
JP4036757B2 JP2002588646A JP2002588646A JP4036757B2 JP 4036757 B2 JP4036757 B2 JP 4036757B2 JP 2002588646 A JP2002588646 A JP 2002588646A JP 2002588646 A JP2002588646 A JP 2002588646A JP 4036757 B2 JP4036757 B2 JP 4036757B2
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Japan
Prior art keywords
thread
core
semiconductor layer
layer
active device
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Expired - Fee Related
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JP2002588646A
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English (en)
Japanese (ja)
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JP2004527131A (ja
Inventor
ソロモン、ポール、マイケル
ショー、ジェーン、マーガレット
カガン、チェリー、アール
ディミトラコプロス、クリストス、ディミトリオス
ニン、タク、フン
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions
    • D—TEXTILES; PAPER
    • D02—YARNS; MECHANICAL FINISHING OF YARNS OR ROPES; WARPING OR BEAMING
    • D02G—CRIMPING OR CURLING FIBRES, FILAMENTS, THREADS, OR YARNS; YARNS OR THREADS
    • D02G3/00—Yarns or threads, e.g. fancy yarns; Processes or apparatus for the production thereof, not otherwise provided for
    • D02G3/44—Yarns or threads characterised by the purpose for which they are designed
    • D02G3/441—Yarns or threads with antistatic, conductive or radiation-shielding properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/12—Layered products comprising a layer of synthetic resin next to a fibrous or filamentary layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
    • H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Textile Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2002588646A 2001-05-09 2002-03-08 能動デバイス、電界効果トランジスタ、電気回路及び布地 Expired - Fee Related JP4036757B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/852,078 US6437422B1 (en) 2001-05-09 2001-05-09 Active devices using threads
PCT/US2002/006996 WO2002091490A1 (en) 2001-05-09 2002-03-08 Active devices using threads

Publications (2)

Publication Number Publication Date
JP2004527131A JP2004527131A (ja) 2004-09-02
JP4036757B2 true JP4036757B2 (ja) 2008-01-23

Family

ID=25312447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002588646A Expired - Fee Related JP4036757B2 (ja) 2001-05-09 2002-03-08 能動デバイス、電界効果トランジスタ、電気回路及び布地

Country Status (9)

Country Link
US (1) US6437422B1 (zh)
EP (1) EP1390991A4 (zh)
JP (1) JP4036757B2 (zh)
KR (1) KR100581813B1 (zh)
CN (1) CN100376043C (zh)
IL (2) IL158607A0 (zh)
MY (1) MY136302A (zh)
TW (1) TW541546B (zh)
WO (1) WO2002091490A1 (zh)

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US6642092B1 (en) * 2002-07-11 2003-11-04 Sharp Laboratories Of America, Inc. Thin-film transistors formed on a metal foil substrate
TW554525B (en) * 2002-08-28 2003-09-21 Ind Tech Res Inst Organic integration device of thin film transistor and light emitting diode
US7535019B1 (en) * 2003-02-18 2009-05-19 Nanosolar, Inc. Optoelectronic fiber
JP4659618B2 (ja) * 2003-07-10 2011-03-30 株式会社イデアルスター 発光素子、及び発光装置
JPWO2005018003A1 (ja) * 2003-08-19 2007-11-01 株式会社イデアルスター 線状素子
US7755141B2 (en) * 2003-10-29 2010-07-13 Ideal Star, Inc. Complementary MISFET formed in a linear body
US20050211973A1 (en) * 2004-03-23 2005-09-29 Kiyotaka Mori Stressed organic semiconductor
US7321133B2 (en) * 2004-11-17 2008-01-22 Plextronics, Inc. Heteroatomic regioregular poly(3-substitutedthiophenes) as thin film conductors in diodes which are not light emitting or photovoltaic
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EP2095442A4 (en) * 2006-11-29 2011-08-17 Mahiar Hamedi INTEGRATED ELECTRONIC CIRCUITS
US20100224862A1 (en) * 2007-09-07 2010-09-09 Hiroyuki Endoh Carbon nanotube structure and thin film transistor
FR2941089B1 (fr) * 2009-01-15 2011-01-21 Commissariat Energie Atomique Transistor a source et drain filaires
KR101366133B1 (ko) 2012-07-13 2014-02-25 한국과학기술원 압전 폴리머를 이용한 패브릭 제조용 파이버 및 그 제조방법
US10081887B2 (en) 2012-12-14 2018-09-25 Intel Corporation Electrically functional fabric for flexible electronics
US9822470B2 (en) * 2012-12-14 2017-11-21 Intel Corporation Flexible embedded interconnects
EP3118906B1 (en) 2014-03-14 2018-08-22 Japan Science and Technology Agency Transistor using piezoresistor as channel, and electronic circuit
KR101595290B1 (ko) * 2014-06-17 2016-02-18 한국기계연구원 선형 소오스 및 선형 드레인 전극을 포함하는 유기 반도체 소자 및 이의 제조 방법, 이를 이용한 직물 구조체 및 부직물 구조체, 그리고 이를 이용한 반도체 장치
KR101579101B1 (ko) * 2014-06-17 2015-12-21 한국기계연구원 유기 반도체 소자 및 이의 제조 방법, 이를 이용한 직물 구조체 및 부직물 구조체, 그리고 이를 이용한 반도체 장치
KR101579096B1 (ko) * 2014-06-17 2015-12-21 한국기계연구원 평행한 선형 소오스 전극, 선형 드레인 전극 및 선형 게이트 전극을 포함하는 유기 반도체 소자 및 이의 제조 방법, 이를 이용한 직물 구조체 및 부직물 구조체, 그리고 이를 이용한 반도체 장치
WO2015194815A1 (ko) 2014-06-17 2015-12-23 한국기계연구원 유기 반도체 소자 및 이의 제조 방법, 이를 이용한 직물 구조체 및 부직물 구조체, 그리고 이를 이용한 반도체 장치
GB2529900B (en) * 2014-09-08 2017-05-03 Univ Nottingham Trent Electronically functional yarns
DK3136143T3 (en) * 2015-08-26 2020-05-18 Max Planck Gesellschaft Hollow-Core Fibre and Method of Manufacturing Thereof
DE102016222265A1 (de) * 2016-02-11 2017-08-17 Airbus Defence and Space GmbH Elektrisches Energieerzeugungssystem für ein Rotorblatt, Beleuchtungssystem für ein Rotorblatt, Rotorblatt sowie Rotorsystem
KR20180049558A (ko) * 2016-11-03 2018-05-11 한국과학기술연구원 섬유형 트랜지스터 및 이의 제조 방법
CN106816531B (zh) * 2016-12-19 2019-01-29 华中科技大学 一种全溶液化制备柔性薄膜晶体管的制备方法
US11035058B2 (en) * 2017-08-16 2021-06-15 Inman Mills Yarn containing a core of functional components
US20220280111A1 (en) * 2019-08-12 2022-09-08 Trustees Of Tufts College Multi-Terminal Sensors for Thread-Based Circuitry
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CN111364147B (zh) * 2020-04-10 2021-10-26 贵溪穿越光电科技有限公司 内置Micro LED易纺织发光导电纤维材料的应用

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Also Published As

Publication number Publication date
MY136302A (en) 2008-09-30
EP1390991A1 (en) 2004-02-25
US6437422B1 (en) 2002-08-20
JP2004527131A (ja) 2004-09-02
IL158607A0 (en) 2004-05-12
CN1610978A (zh) 2005-04-27
KR100581813B1 (ko) 2006-05-23
IL158607A (en) 2007-10-31
EP1390991A4 (en) 2007-10-31
KR20050028289A (ko) 2005-03-22
TW541546B (en) 2003-07-11
CN100376043C (zh) 2008-03-19
WO2002091490A1 (en) 2002-11-14

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