WO2002091490A1 - Active devices using threads - Google Patents
Active devices using threads Download PDFInfo
- Publication number
- WO2002091490A1 WO2002091490A1 PCT/US2002/006996 US0206996W WO02091490A1 WO 2002091490 A1 WO2002091490 A1 WO 2002091490A1 US 0206996 W US0206996 W US 0206996W WO 02091490 A1 WO02091490 A1 WO 02091490A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- active device
- thread
- threads
- semiconductor body
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 134
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000012212 insulator Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000004744 fabric Substances 0.000 claims abstract description 15
- 239000004020 conductor Substances 0.000 claims description 19
- 230000005669 field effect Effects 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000011368 organic material Substances 0.000 claims description 11
- 239000013307 optical fiber Substances 0.000 claims description 10
- 238000010292 electrical insulation Methods 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- 125000006850 spacer group Chemical group 0.000 claims description 7
- QHODTQWNIKYREX-UHFFFAOYSA-J 2-phenylethanamine;tetraiodostannane Chemical compound I[Sn](I)(I)I.NCCC1=CC=CC=C1 QHODTQWNIKYREX-UHFFFAOYSA-J 0.000 claims description 6
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 claims description 6
- 229920000123 polythiophene Polymers 0.000 claims description 6
- 150000003384 small molecules Chemical class 0.000 claims description 6
- 239000012772 electrical insulation material Substances 0.000 claims description 5
- 229920001940 conductive polymer Polymers 0.000 claims description 4
- 239000002305 electric material Substances 0.000 claims description 3
- 239000012774 insulation material Substances 0.000 claims description 3
- 239000012777 electrically insulating material Substances 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 10
- 239000000126 substance Substances 0.000 abstract description 5
- 239000011162 core material Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 10
- 229920003023 plastic Polymers 0.000 description 10
- 239000004033 plastic Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 8
- 239000004926 polymethyl methacrylate Substances 0.000 description 8
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 238000009413 insulation Methods 0.000 description 6
- 238000005070 sampling Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000003618 dip coating Methods 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229920002799 BoPET Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000005041 Mylar™ Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical group C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- WOIHABYNKOEWFG-UHFFFAOYSA-N [Sr].[Ba] Chemical compound [Sr].[Ba] WOIHABYNKOEWFG-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- -1 pentacene Chemical class 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- LBILMILSSHNOHK-UHFFFAOYSA-N 3-hexylthiophene Chemical compound CCCCCCC=1C=[C]SC=1 LBILMILSSHNOHK-UHFFFAOYSA-N 0.000 description 1
- WMRWLICJQJYURV-UHFFFAOYSA-J I[Sn](I)(I)I.N Chemical compound I[Sn](I)(I)I.N WMRWLICJQJYURV-UHFFFAOYSA-J 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229920005372 Plexiglas® Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000002320 enamel (paints) Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical group 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/856—Thermoelectric active materials comprising organic compositions
-
- D—TEXTILES; PAPER
- D02—YARNS; MECHANICAL FINISHING OF YARNS OR ROPES; WARPING OR BEAMING
- D02G—CRIMPING OR CURLING FIBRES, FILAMENTS, THREADS, OR YARNS; YARNS OR THREADS
- D02G3/00—Yarns or threads, e.g. fancy yarns; Processes or apparatus for the production thereof, not otherwise provided for
- D02G3/44—Yarns or threads characterised by the purpose for which they are designed
- D02G3/441—Yarns or threads with antistatic, conductive or radiation-shielding properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/12—Layered products comprising a layer of synthetic resin next to a fibrous or filamentary layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL15860702A IL158607A0 (en) | 2001-05-09 | 2002-03-08 | Active devices using threads |
JP2002588646A JP4036757B2 (en) | 2001-05-09 | 2002-03-08 | Active devices, field effect transistors, electrical circuits and fabrics |
EP02731116A EP1390991A4 (en) | 2001-05-09 | 2002-03-08 | Active devices using threads |
IL158607A IL158607A (en) | 2001-05-09 | 2003-10-26 | Active devices using threads |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/852,078 | 2001-05-09 | ||
US09/852,078 US6437422B1 (en) | 2001-05-09 | 2001-05-09 | Active devices using threads |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2002091490A1 true WO2002091490A1 (en) | 2002-11-14 |
Family
ID=25312447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/006996 WO2002091490A1 (en) | 2001-05-09 | 2002-03-08 | Active devices using threads |
Country Status (9)
Country | Link |
---|---|
US (1) | US6437422B1 (en) |
EP (1) | EP1390991A4 (en) |
JP (1) | JP4036757B2 (en) |
KR (1) | KR100581813B1 (en) |
CN (1) | CN100376043C (en) |
IL (2) | IL158607A0 (en) |
MY (1) | MY136302A (en) |
TW (1) | TW541546B (en) |
WO (1) | WO2002091490A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005018003A1 (en) * | 2003-08-19 | 2005-02-24 | Ideal Star Inc. | Linear device |
WO2005041302A1 (en) * | 2003-10-29 | 2005-05-06 | Ideal Star Inc. | Complementary misfet and integrated circuit |
GB2426255A (en) * | 2005-05-16 | 2006-11-22 | Univ Manchester | Yarn with embedded sensor or processing device |
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DE10124457A1 (en) * | 2001-05-18 | 2002-12-05 | Siemens Ag | Fiber with integrated electronic component, electronic fabric, manufacturing process and use therefor |
ITMI20020231A1 (en) * | 2002-02-08 | 2003-08-08 | Milano Politecnico | ORGANIC SEMICONDUCTOR PHOTORETER |
KR20040101568A (en) * | 2002-05-02 | 2004-12-02 | 가부시키가이샤 이디알 스타 | Line element and method of manufacturing the line element |
US20050218461A1 (en) * | 2002-05-02 | 2005-10-06 | Yasuhiko Kasama | Integrating device |
US6642092B1 (en) * | 2002-07-11 | 2003-11-04 | Sharp Laboratories Of America, Inc. | Thin-film transistors formed on a metal foil substrate |
TW554525B (en) * | 2002-08-28 | 2003-09-21 | Ind Tech Res Inst | Organic integration device of thin film transistor and light emitting diode |
US7535019B1 (en) * | 2003-02-18 | 2009-05-19 | Nanosolar, Inc. | Optoelectronic fiber |
KR101085378B1 (en) * | 2003-07-10 | 2011-11-21 | 가부시키가이샤 이디알 스타 | Light-emitting element and device |
US20050211973A1 (en) * | 2004-03-23 | 2005-09-29 | Kiyotaka Mori | Stressed organic semiconductor |
US7321133B2 (en) * | 2004-11-17 | 2008-01-22 | Plextronics, Inc. | Heteroatomic regioregular poly(3-substitutedthiophenes) as thin film conductors in diodes which are not light emitting or photovoltaic |
US7205478B2 (en) * | 2004-12-09 | 2007-04-17 | International Business Machines Corporation | Active device thread electrical connections |
US20060147708A1 (en) * | 2004-12-30 | 2006-07-06 | Clark Anthony L | Photochromic hybrid fabric |
US20070272919A1 (en) * | 2006-05-24 | 2007-11-29 | Matsushita Electric Industrial Co., Ltd. | Stressed organic semiconductor devices |
US7646015B2 (en) * | 2006-10-31 | 2010-01-12 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device and semiconductor device |
US20100163283A1 (en) * | 2006-11-29 | 2010-07-01 | Mahiar Hamedi | Electronic circuitry integrated in fabrics |
WO2009031525A1 (en) * | 2007-09-07 | 2009-03-12 | Nec Corporation | Carbon nanotube structure, and thin film transistor |
FR2941089B1 (en) * | 2009-01-15 | 2011-01-21 | Commissariat Energie Atomique | SOURCE TRANSISTOR AND WIRED DRAIN |
KR101366133B1 (en) | 2012-07-13 | 2014-02-25 | 한국과학기술원 | Fiber for Fabricating Fabric Using Polymer Piezoelectrics and Fabrication Method Thereof |
US10081887B2 (en) | 2012-12-14 | 2018-09-25 | Intel Corporation | Electrically functional fabric for flexible electronics |
US9822470B2 (en) * | 2012-12-14 | 2017-11-21 | Intel Corporation | Flexible embedded interconnects |
CN106104831B (en) | 2014-03-14 | 2019-04-05 | 国立研究开发法人科学技术振兴机构 | The transistor and electronic circuit of piezoelectric electro resistance body are used for channel |
KR101579096B1 (en) * | 2014-06-17 | 2015-12-21 | 한국기계연구원 | Organic semiconductor element comprising linear source electrode, linear drain electrode and linear gate electrode in parallel and manufacturing method thereof, fabric structure and nonwoven structure using organic semiconductor element, and semiconductor device using organic semiconductor element, fabric structure or nonwoven structure |
KR101579101B1 (en) * | 2014-06-17 | 2015-12-21 | 한국기계연구원 | Organic semiconductor element and manufacturing method thereof, fabric structure and nonwoven structure using organic semiconductor element, and semiconductor device using organic semiconductor element, fabric structure or nonwoven structure |
WO2015194815A1 (en) | 2014-06-17 | 2015-12-23 | 한국기계연구원 | Organic semiconductor element and manufacturing method therefor, fabric structure and nonwoven structure using same, and semiconductor device using same |
KR101595290B1 (en) * | 2014-06-17 | 2016-02-18 | 한국기계연구원 | Organic semiconductor element comprising linear source electrode and linear drain electrode and manufacturing method thereof, fabric structure and nonwoven structure using organic semiconductor element, and semiconductor device using organic semiconductor element, fabric structure or nonwoven structure |
GB2529900B (en) * | 2014-09-08 | 2017-05-03 | Univ Nottingham Trent | Electronically functional yarns |
DK3136143T3 (en) * | 2015-08-26 | 2020-05-18 | Max Planck Gesellschaft | Hollow-Core Fibre and Method of Manufacturing Thereof |
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KR20180049558A (en) * | 2016-11-03 | 2018-05-11 | 한국과학기술연구원 | Fibrous transistor and method for manufacturing the same |
CN106816531B (en) * | 2016-12-19 | 2019-01-29 | 华中科技大学 | A kind of whole soln prepares the preparation method of flexible thin-film transistor |
US11035058B2 (en) * | 2017-08-16 | 2021-06-15 | Inman Mills | Yarn containing a core of functional components |
WO2021030346A1 (en) * | 2019-08-12 | 2021-02-18 | Trustees Of Tufts College | Multi-terminal sensors for thread-based circuitry |
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US5821688A (en) * | 1994-10-07 | 1998-10-13 | Iowa State University Research Foundation | Flexible panel display having thin film transistors driving polymer light-emitting diodes |
US6180956B1 (en) * | 1999-03-03 | 2001-01-30 | International Business Machine Corp. | Thin film transistors with organic-inorganic hybrid materials as semiconducting channels |
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US6278127B1 (en) * | 1994-12-09 | 2001-08-21 | Agere Systems Guardian Corp. | Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor |
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-
2001
- 2001-05-09 US US09/852,078 patent/US6437422B1/en not_active Expired - Fee Related
-
2002
- 2002-03-08 KR KR1020037013166A patent/KR100581813B1/en not_active IP Right Cessation
- 2002-03-08 JP JP2002588646A patent/JP4036757B2/en not_active Expired - Fee Related
- 2002-03-08 IL IL15860702A patent/IL158607A0/en active IP Right Grant
- 2002-03-08 WO PCT/US2002/006996 patent/WO2002091490A1/en active Search and Examination
- 2002-03-08 CN CNB028070941A patent/CN100376043C/en not_active Expired - Fee Related
- 2002-03-08 EP EP02731116A patent/EP1390991A4/en not_active Withdrawn
- 2002-04-30 MY MYPI20021594A patent/MY136302A/en unknown
- 2002-05-06 TW TW091109340A patent/TW541546B/en not_active IP Right Cessation
-
2003
- 2003-10-26 IL IL158607A patent/IL158607A/en not_active IP Right Cessation
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US5347144A (en) * | 1990-07-04 | 1994-09-13 | Centre National De La Recherche Scientifique (Cnrs) | Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials |
US5546413A (en) | 1994-09-01 | 1996-08-13 | Motorola | Integrated light emitting device |
US5821688A (en) * | 1994-10-07 | 1998-10-13 | Iowa State University Research Foundation | Flexible panel display having thin film transistors driving polymer light-emitting diodes |
US6278127B1 (en) * | 1994-12-09 | 2001-08-21 | Agere Systems Guardian Corp. | Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor |
US5753381A (en) | 1995-12-22 | 1998-05-19 | Add Vision Inc | Electroluminescent filament |
US6242097B1 (en) * | 1997-08-06 | 2001-06-05 | The Furukawa Electric Co., Ltd. | Cable |
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Non-Patent Citations (1)
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See also references of EP1390991A4 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005018003A1 (en) * | 2003-08-19 | 2005-02-24 | Ideal Star Inc. | Linear device |
JPWO2005018003A1 (en) * | 2003-08-19 | 2007-11-01 | 株式会社イデアルスター | Linear element |
WO2005041302A1 (en) * | 2003-10-29 | 2005-05-06 | Ideal Star Inc. | Complementary misfet and integrated circuit |
GB2426255A (en) * | 2005-05-16 | 2006-11-22 | Univ Manchester | Yarn with embedded sensor or processing device |
GB2426255B (en) * | 2005-05-16 | 2009-09-23 | Univ Manchester | Operative devices |
Also Published As
Publication number | Publication date |
---|---|
EP1390991A4 (en) | 2007-10-31 |
KR100581813B1 (en) | 2006-05-23 |
TW541546B (en) | 2003-07-11 |
IL158607A (en) | 2007-10-31 |
KR20050028289A (en) | 2005-03-22 |
EP1390991A1 (en) | 2004-02-25 |
JP2004527131A (en) | 2004-09-02 |
MY136302A (en) | 2008-09-30 |
CN1610978A (en) | 2005-04-27 |
CN100376043C (en) | 2008-03-19 |
US6437422B1 (en) | 2002-08-20 |
JP4036757B2 (en) | 2008-01-23 |
IL158607A0 (en) | 2004-05-12 |
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