JP4026727B2 - 電力分割された電極 - Google Patents
電力分割された電極 Download PDFInfo
- Publication number
- JP4026727B2 JP4026727B2 JP50517297A JP50517297A JP4026727B2 JP 4026727 B2 JP4026727 B2 JP 4026727B2 JP 50517297 A JP50517297 A JP 50517297A JP 50517297 A JP50517297 A JP 50517297A JP 4026727 B2 JP4026727 B2 JP 4026727B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- power
- substrate
- electrodes
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 60
- 239000003990 capacitor Substances 0.000 claims description 47
- 238000012545 processing Methods 0.000 claims description 37
- 238000006243 chemical reaction Methods 0.000 claims description 21
- 239000003989 dielectric material Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 230000007246 mechanism Effects 0.000 claims description 5
- 238000003672 processing method Methods 0.000 claims 3
- 238000001514 detection method Methods 0.000 claims 1
- 238000001914 filtration Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 50
- 239000007789 gas Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- -1 baffle design Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Plasma Technology (AREA)
- Primary Cells (AREA)
- Surgical Instruments (AREA)
- Cable Accessories (AREA)
- Inert Electrodes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/491,349 US6042686A (en) | 1995-06-30 | 1995-06-30 | Power segmented electrode |
| US08/491,349 | 1995-06-30 | ||
| PCT/US1996/010805 WO1997002589A1 (en) | 1995-06-30 | 1996-06-20 | Power segmented electrode |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH11509358A JPH11509358A (ja) | 1999-08-17 |
| JPH11509358A5 JPH11509358A5 (enExample) | 2004-08-19 |
| JP4026727B2 true JP4026727B2 (ja) | 2007-12-26 |
Family
ID=23951816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50517297A Expired - Lifetime JP4026727B2 (ja) | 1995-06-30 | 1996-06-20 | 電力分割された電極 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US6042686A (enExample) |
| EP (1) | EP0871975B1 (enExample) |
| JP (1) | JP4026727B2 (enExample) |
| KR (3) | KR100479201B1 (enExample) |
| AT (1) | ATE247866T1 (enExample) |
| AU (1) | AU6339196A (enExample) |
| DE (1) | DE69629588T2 (enExample) |
| WO (1) | WO1997002589A1 (enExample) |
Families Citing this family (146)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19814871A1 (de) * | 1998-04-02 | 1999-10-07 | Max Planck Gesellschaft | Verfahren und Vorrichtung zur gezielten Teilchenmanipulierung und -deposition |
| KR100292411B1 (ko) * | 1998-09-25 | 2001-06-01 | 윤종용 | 반도체소자의 제조에 사용되는 플라즈마 장비 |
| US6492612B1 (en) * | 1998-12-28 | 2002-12-10 | Tokyo Electron Limited | Plasma apparatus and lower electrode thereof |
| US6367413B1 (en) * | 1999-06-15 | 2002-04-09 | Tokyo Electron Limited | Apparatus for monitoring substrate biasing during plasma processing of a substrate |
| JP2001035808A (ja) * | 1999-07-22 | 2001-02-09 | Semiconductor Energy Lab Co Ltd | 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法 |
| JP4585648B2 (ja) * | 1999-09-03 | 2010-11-24 | 株式会社アルバック | プラズマ処理装置 |
| US8114245B2 (en) * | 1999-11-26 | 2012-02-14 | Tadahiro Ohmi | Plasma etching device |
| US6363882B1 (en) | 1999-12-30 | 2002-04-02 | Lam Research Corporation | Lower electrode design for higher uniformity |
| WO2001052302A1 (en) * | 2000-01-10 | 2001-07-19 | Tokyo Electron Limited | Segmented electrode assembly and method for plasma processing |
| JP2003524895A (ja) * | 2000-02-25 | 2003-08-19 | 東京エレクトロン株式会社 | 容量性プラズマ源に係るマルチゾーンrf電極 |
| US20030079983A1 (en) * | 2000-02-25 | 2003-05-01 | Maolin Long | Multi-zone RF electrode for field/plasma uniformity control in capacitive plasma sources |
| JP4655385B2 (ja) * | 2000-03-01 | 2011-03-23 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
| AU2001245938A1 (en) * | 2000-03-28 | 2001-10-08 | Tokyo Electron Limited | Method and apparatus for controlling power delivered to a multiple segment electrode |
| TWI224806B (en) * | 2000-05-12 | 2004-12-01 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
| WO2002013225A2 (en) * | 2000-08-08 | 2002-02-14 | Tokyo Electron Limited | Plasma processing method and apparatus |
| TW478026B (en) * | 2000-08-25 | 2002-03-01 | Hitachi Ltd | Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield |
| TW529085B (en) * | 2000-09-22 | 2003-04-21 | Alps Electric Co Ltd | Method for evaluating performance of plasma treatment apparatus or performance confirming system of plasma treatment system |
| JP4717295B2 (ja) * | 2000-10-04 | 2011-07-06 | 株式会社半導体エネルギー研究所 | ドライエッチング装置及びエッチング方法 |
| TW519716B (en) * | 2000-12-19 | 2003-02-01 | Tokyo Electron Ltd | Wafer bias drive for a plasma source |
| US6741446B2 (en) * | 2001-03-30 | 2004-05-25 | Lam Research Corporation | Vacuum plasma processor and method of operating same |
| US6838387B1 (en) | 2001-06-21 | 2005-01-04 | John Zajac | Fast etching system and process |
| US20060191637A1 (en) * | 2001-06-21 | 2006-08-31 | John Zajac | Etching Apparatus and Process with Thickness and Uniformity Control |
| US20050059250A1 (en) * | 2001-06-21 | 2005-03-17 | Savas Stephen Edward | Fast etching system and process for organic materials |
| JP2003045874A (ja) | 2001-07-27 | 2003-02-14 | Semiconductor Energy Lab Co Ltd | 金属配線およびその作製方法、並びに金属配線基板およびその作製方法 |
| US6642661B2 (en) * | 2001-08-28 | 2003-11-04 | Tokyo Electron Limited | Method to affect spatial distribution of harmonic generation in a capacitive discharge reactor |
| TW591714B (en) * | 2002-02-20 | 2004-06-11 | Radiiontech Co Ltd | Cleaning apparatus using atmospheric pressure plasma |
| JP4753276B2 (ja) * | 2002-11-26 | 2011-08-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| TW201041455A (en) * | 2002-12-16 | 2010-11-16 | Japan Science & Tech Agency | Plasma generation device, plasma control method, and substrate manufacturing method |
| KR100528464B1 (ko) * | 2003-02-06 | 2005-11-15 | 삼성전자주식회사 | 스마트카드의 보안장치 |
| US7075771B2 (en) * | 2003-05-21 | 2006-07-11 | Tokyo Electron Limited | Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system |
| US20050031796A1 (en) * | 2003-08-07 | 2005-02-10 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for controlling spatial distribution of RF power and plasma density |
| US7426900B2 (en) * | 2003-11-19 | 2008-09-23 | Tokyo Electron Limited | Integrated electrostatic inductive coupling for plasma processing |
| US7771562B2 (en) * | 2003-11-19 | 2010-08-10 | Tokyo Electron Limited | Etch system with integrated inductive coupling |
| US20050130620A1 (en) * | 2003-12-16 | 2005-06-16 | Andreas Fischer | Segmented radio frequency electrode apparatus and method for uniformity control |
| KR100622831B1 (ko) * | 2004-04-13 | 2006-09-18 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 |
| US7276135B2 (en) * | 2004-05-28 | 2007-10-02 | Lam Research Corporation | Vacuum plasma processor including control in response to DC bias voltage |
| US20060021580A1 (en) * | 2004-06-02 | 2006-02-02 | Tokyo Electron Limited | Plasma processing apparatus and impedance adjustment method |
| US7988816B2 (en) | 2004-06-21 | 2011-08-02 | Tokyo Electron Limited | Plasma processing apparatus and method |
| US7951262B2 (en) | 2004-06-21 | 2011-05-31 | Tokyo Electron Limited | Plasma processing apparatus and method |
| JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US20060037704A1 (en) * | 2004-07-30 | 2006-02-23 | Tokyo Electron Limited | Plasma Processing apparatus and method |
| KR100663351B1 (ko) * | 2004-11-12 | 2007-01-02 | 삼성전자주식회사 | 플라즈마 처리장치 |
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- 1995-06-30 US US08/491,349 patent/US6042686A/en not_active Expired - Lifetime
-
1996
- 1996-06-20 KR KR1019970709778A patent/KR100479201B1/ko not_active Expired - Lifetime
- 1996-06-20 EP EP96922561A patent/EP0871975B1/en not_active Expired - Lifetime
- 1996-06-20 AT AT96922561T patent/ATE247866T1/de not_active IP Right Cessation
- 1996-06-20 JP JP50517297A patent/JP4026727B2/ja not_active Expired - Lifetime
- 1996-06-20 AU AU63391/96A patent/AU6339196A/en not_active Abandoned
- 1996-06-20 KR KR10-2003-7009421A patent/KR100447583B1/ko not_active Expired - Lifetime
- 1996-06-20 DE DE69629588T patent/DE69629588T2/de not_active Expired - Lifetime
- 1996-06-20 WO PCT/US1996/010805 patent/WO1997002589A1/en not_active Ceased
- 1996-06-20 KR KR10-2004-7003858A patent/KR100490781B1/ko not_active Expired - Lifetime
-
2000
- 2000-02-03 US US09/497,234 patent/US6239403B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0871975B1 (en) | 2003-08-20 |
| EP0871975A1 (en) | 1998-10-21 |
| KR20040033316A (ko) | 2004-04-21 |
| ATE247866T1 (de) | 2003-09-15 |
| AU6339196A (en) | 1997-02-05 |
| US6239403B1 (en) | 2001-05-29 |
| KR100490781B1 (ko) | 2005-05-19 |
| KR19990028462A (ko) | 1999-04-15 |
| DE69629588D1 (de) | 2003-09-25 |
| WO1997002589A1 (en) | 1997-01-23 |
| JPH11509358A (ja) | 1999-08-17 |
| DE69629588T2 (de) | 2004-06-24 |
| KR100479201B1 (ko) | 2005-07-11 |
| KR100447583B1 (ko) | 2004-09-04 |
| KR20040004493A (ko) | 2004-01-13 |
| US6042686A (en) | 2000-03-28 |
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