TW591714B - Cleaning apparatus using atmospheric pressure plasma - Google Patents
Cleaning apparatus using atmospheric pressure plasma Download PDFInfo
- Publication number
- TW591714B TW591714B TW092103453A TW92103453A TW591714B TW 591714 B TW591714 B TW 591714B TW 092103453 A TW092103453 A TW 092103453A TW 92103453 A TW92103453 A TW 92103453A TW 591714 B TW591714 B TW 591714B
- Authority
- TW
- Taiwan
- Prior art keywords
- reaction gas
- electrode
- electrodes
- gas supply
- scope
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1316—Methods for cleaning the liquid crystal cells, or components thereof, during manufacture: Materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Cleaning In General (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
591714 玖、發明說明 說月應敘明.發明所屬之技術領域、先前技術、内容、實施方式及圏式簡單說明） 【發明所屬之技術領域】 iajl之領娀 本發明係有關於一種電漿清潔裝置，尤其是使用大氣 5壓力電漿之清潔裝置，其可使用在電漿狀態下的反應氣體 清潔電漿顯示面板（PDP)，液晶顯示器（LCD)等。 【先前技術】591714, the description of the invention should be described in the month. The technical field, prior art, content, embodiments and modes of the invention are briefly explained. [Technical field to which the invention belongs] Iajl's collar The present invention relates to a plasma cleaning The device, especially a cleaning device using an atmospheric 5 pressure plasma, can clean a plasma display panel (PDP), a liquid crystal display (LCD), etc. using a reactive gas in a plasma state. [Prior art]
Hoi技藝之說明 · 各種材料，或材料上的其他材料之沉積或接合之表面 10清潔對於黏著劑的強度以及黏力具有相當的影響。相關技 藝的表面清潔方法已發展出使用數種化學品，而新的表面 清潔方法已被研究出來並加以使用。就此新的表面清潔方 法而言，其中有一種係使用低溫電漿及低壓狀態下的電漿 之清潔方法。使用低壓電漿之表面清潔方法在低壓的真空 槽的内部產生電聚，且具有由與材料表面接觸的此電聚產 生之離子或激發氣體，以除去材料表面上的雜質或污染材 鲁 料。僅管其具有良好的清潔效果，實際上使用低壓狀態之 電漿的表面清潔方法並未廣泛地使用，因為其需要真空裝 置產生低壓電漿，且此種清潔方法很難應用於在大氣壓力 下執行的連續過程中。因此，藉由在大氣壓力下產生電漿 以應用電漿至表面清潔輯近研究目前正積極地進行。 使用大氣壓力電漿之清潔裝置以如下方式操作，其中 :包括非惰性氣體Ar，He，N2以及氧化氣體之〇2，c〇以及壓 縮氣體的反應氣體在抵達擬清潔之目標材料前喷出，且藉 5 玖、發明說明 由滾子達成電極，且在該狀態下，當施加無線頻率（RF)或 交替電流（AC)電源時，電漿在大氣壓力i atm或大約i atm 下形成。 使用電漿清潔半導體裝置的習知裝置備設有冷卻水流 入其中的一圓筒形第一電極，以及與第一電極分開一段間 距且圍繞著第一電極的一圓筒形第二電極，如1999年7月 16曰提申之曰本專利申請案第u_2〇3673號案所揭露（發明 之名稱為：電漿處理方法及電漿處理裝置），其中該裝置另 備設有一分開的電力供應器，在第一電極及第二電極間藉 由外加高頻電波至第一及第二電極而在第一及第二電極間 幵y成一電場，供應反應氣體至第一及第二電極之間的一空 間中之一反應氣體供應口；以及一反應氣體出氣口，其將 藉由供應於第一及第二電極之間而轉換成電漿狀態的反應 氣體噴射至外部。 因此’電場藉由傳遞高頻電波於第一及第二電極之間 而形成，且反應氣體藉由通過反應氣體供應口供應反應氣 體至在第一及第二電極之間的空間中而轉換成電漿狀態。 此外，清潔方法之進行可藉由喷出在電漿狀態下的反 應氣體於擬清潔材料上移除在擬清潔材料之表面上的有機 材料，其中第一及第二電極藉由傳遞高頻電波而加熱至一 同溫，使得第一電極藉由供應至第一電極的冷卻水而冷卻 〇 然而’習知電漿處理裝置的問題在於擬處理目標材料 之尺寸受到限制，因為在電漿狀態下的反應氣體在形成電 591714 玖、發明說明 聚狀態下之反應氣體後會喷射至外部，因而減少了電漿喷 射區。 亦即，電漿氣體喷射式電漿處理裝置的問題在於該裝 置的清潔時間會加長，此係由於雖然清潔方法一次喷出電 5衆處理具有-特定尺寸或小於該尺寸的一目標材料，然而 電漿氣體在擬清潔目標材料或電漿處理裝置在清潔具有一 特定尺寸或超過該尺寸的材料而移動時，重覆地喷出。 尤其是，該習知電漿處理裝置的問題在於無法一致性 地清潔擬清潔之目標材料，因為電漿氣體在擬清潔之目標 10材料之接收電漿氣體的一特定區及藉由移動擬清潔之目標 材料或電漿處理裝置而接收電漿氣體之擬清潔目標材料的 其他特定區之間的一邊界區上較少地接觸。 此外’該電漿處理裝置的問題在於冷卻效能之下降， 此係由於當第一電極藉由供應冷卻水至第一電極而冷卻以 15冷卻第一及第二電極時第二電極非直接與冷卻水接觸。 第1圖為一習知技藝的另一清潔裝置的例示圖。該相 關技藝之清潔裝置備設有一反應室2，其使用在電漿狀態 下之反應氣體執行清潔半導體裝置，如PDp(電漿顯示面板 )、LCD(液晶顯示器）之清潔。如第1圖所示，其中供應反 20應氣體的一反應氣體供應口 1〇，以及噴出擬清潔之一目標 材料清潔目標材料供應口 14形成在反應室2的一側，而喷 出電漿狀態下的反應氣體的一反應氣體喷射口 12,排出擬 清潔之一目標材料的一清潔目標材料排出口 16形成在反應 室2的另一側。 7 591714 玖、發明說明 此外，一上電極22形成在反應室2的下内側的上部， 一下電極18形成在反應室2的内側的下部上，而上電極 22及下電極18連接至可傳輸1至10 KHz的高頻電力之一 電力供應器26，其中上電極22及下電極18的表面分別被 5絕緣材料20、24所絕緣，以防止弧光，數個穿孔（未顯示） 形成在下電極18的上部之表面上，如第2圖所示，而當擬 清潔的目標材料垂直地移動通過穿孔時可升或降擬清潔之 目標材料的銷19架設在穿孔内。 · 因此’ Μ擬清潔的目標材料藉由一機器人臂的移動裝 10置通過清潔目標材料供應口 14而定位在下電極18的上部 。下電極18的銷19自下電極18的表面通過孔向上突出， 以自如機器人臂的移動裝置接收擬清潔之目標材料，並移 動至穿孔的下部，使得擬清潔之目標材料定位在下電極j 8 上。 15 當1至10 ΚΗζ之高頻電力藉由電力供應器26傳輸至 上及下電極22、18時，電場形成在反應室2中而反應氣體 · 供應至反應室2中，而電場通過反應氣體供應口 1〇而形成 於反應室2中。 因此，供應至反應室2中的反應氣體藉由電場而起動 20 並轉換成電漿。 當電場藉由傳輸1至10 KHz之高頻電力的電力供應 器26形成在上電極22及下電極18之間時，電極自一上電 極22或下電極18噴出，而電極與反應氣體碰撞，以分離 反應氣體之最外電極至外部，以形成離子、電極及碳群組 8 玖、發明說明 共存的一電漿狀態。 電漿狀態之反應氣體與在一反應室2中的一擬清潔之 目標材料反應，以移除存在於擬清潔之目標材料之表面上 的有機及無機材料之顆粒。 此外，當使用«之-清潔方法在反應室2中完成時 ，下電極18之銷19自下電極18通過穿孔向上突出，以自 下電極18分開擬清潔目標材料，而以銷19自下電極^分 開之擬清潔目標材料再藉由如機器人臂之移動裝置通過清 潔目標材料排出口 16而排出至反應室2之外。 然而，該習知電漿清潔裝置的問題在於通過上及下電 極之間的擬清潔目標材料會被上及下電極喷出的熱破壞， 因為雖然上及下電極使用高頻電力上升至一高溫、一分開 的冷卻裝置未備設於電漿清潔裝置中。 此外，忒清潔裝置的問題在於反應爐的尺寸受到限制 ，如架設空間，上電極及下電極之尺寸，而擬清潔之目標 材料的清潔力受到反應爐射出及消耗裝置之限制。 特別是，該清潔方法無法在具有某一尺寸或超過該尺 寸之擬清潔目標材料上進行，因為擬清潔材料無法容易地 射至反應爐中並自其中排出。 此外’數個孔形成在下電極之表面上，使得轉換成在 反應爐中的電漿狀態的反應氣體之正電荷收集在穿孔中， 以使電漿的密度一致性下降，而在低電極表面上的一絕緣 體以正電荷餘刻，以產生絕緣失敗而造成弧光。 同時’日本專利申請案第8-321397號案（發明名稱： 591714 玖、發明說明 用以產生大氣壓電漿之裝置及方法）揭露用以產生大氣壓電 漿的一例示裝置。 該裝置具有以下構造··用以產生大氣壓電漿的一例示 裝置，其中所備置的一電極口由連接至AC電源的電極及 5地面電極構成，而AC電場在氣體存在下施加於電極口的 中間，使得藉由發光排出的電漿在大氣壓力下產生，該裝 置另包括藉由在導體的前表面上塗上一絕緣材料而形成的 一插入元件以填充在電極部的中間。 · 然而，若填充用以以絕緣材料塗敷之導體的前表面的 10干擾元件於電極部的中間，反應氣體必須通過此干擾元件 ，使得流體流被干擾，而降低了電漿的產生效率。此外， 由於在干擾元件内導體的暴露至外面有造成危險的可能性 〇 在用以產生具有以上構造的大氣壓力電漿之裝置中， 15供應氣體至電極部的中間，以產生電漿。同時，被供應之 氣體必須均勻地供應，以完成均勻的電漿。 · 此外，在電極部的電極上上下平行地架設，且擬清潔 之目標材料定位在這些電極之間的狀況下，目標材料為電 極產生之電場所影響，而形成在目標材料上的金屬薄膜可 20 能會被破壞。 此外，目標材料必須定位在上及下電極之間，以完成 清潔步驟。因此，僅十分淺的平板式材料可被處理，因此 其應用受到限制。 此外，如上所述，在電極上下排列，而目標材料定位 10 591714 玖、發明說明 在這些電極之間的内部之狀況下，這些電極產生的電場之 形成使得電場通過目標材料。因此，金屬薄膜，譬如在目 標材料上的圖案可能會受到破壞。 【發明内容3 5 發明之摘要 為解決上述問題，本發明的目的為備置使用大氣壓電 漿的一清潔裝置，其可藉由不限制擬清潔目標材料之尺寸 及形狀清潔擬清潔材料而縮短清潔時間。 本發明的另一目的為備置使用大氣壓電漿的一清潔裝 10置’其可改良擬清潔目標材料的清潔之一致性。 本發明的另一目的為備置使用大氣壓電漿的一清潔裝 置’其中電極可有效地冷卻。 本發明的另一目的為備置使用大氣壓電漿的一清潔裝 置，其可藉由使用低頻電波形成電漿而阻止電極的溫度增 15 加至一高溫。 本發明的另一目的為備置使用大氣壓電漿的一清潔裝 置，其藉由在支持擬清潔之目標材料的電極表面上形成的 穿孔防止電漿之密度一致性的下降，以及由於在電極表面 上的絕緣體之失效而造成的弧光。 20 本發明的另一目的為備置使用大氣壓電漿的一清潔裝 置’其可藉由排列電極部之電極與目標材料之基底平行解 決形成於目標材料上的金屬薄膜受電極部產生的電場之影 響而被破壞。 本發明的另一目的為備置使用大氣壓電漿的一清潔裝 11 591714 玖、發明說明 置，其可藉由改良氣體供應構造而產生均勻的電漿。 為達成上述目的，依據本發明的使用大氣壓電漿的一 >月各裝置包括：可供應具有某一壓力之反應氣體至下方的 一反應氣體供應部；架設成與以一間距和反應氣體供應部 5分開’且與反應氣體供應部平形的一反應氣體吸出部，而 該吸出部吸出並發射供應的反應氣體至某一壓力；一電極 部’其包括架設成與反應氣體供應部平行，且在反應氣體 供應部及反應氣體吸出部之間，且一絕緣材料的固定本體 插入其間的第一及第二電極；一電力供應器，其可藉由施 1〇加一電力供應至第一及第二電極而在第一及第二電極的下 方形成一電場；以及一桌子，其定位在反應氣體供應部、 反應氣體吸出部以及電極部的下方，且支持擬清潔目標材 料。 反應氣體供應部包括一反應氣體供應管，其在供應部 15的一側之内面上，而在供應部的另一側上皺起的是相對地 形成之數個在反應氣體供應管的表面上的反應氣體供應口 。該反應氣體吸出部包括在一側之内面上的反應氣體吸出 管’而在該吸出部的另一側上皺起的是相對地形成之在反 應氣體吸出管的表面上之反應氣體吸出口。 2〇 此外’反應氣體吸出口的直徑大於反應氣體供應口， 數個突出部及槽形成在第一及第二電極上，以增加其表面 積，且第一及第二電極以浮凸處理。 此外’第一及第二電極定位在一絕緣體，如玻璃上， 且第一及第二電極之表面以鍍鋅。 12 591714 玖、發明說明 該裝置另包括-冷風扇，其架設在電極的上方，以冷 部第一及第二電極。反應氣體供應部、電極部以及反應氣 體吸出部係-體成型，而反應氣體供應部、電極部以及反 應氣體吸出部以-支持部@定在_操作㈣天花板上。 此外，數個滾子形成在桌子的表面上，使得定位在桌 面上的擬清潔之目標材料藉由滾子自一側移動至另一側。 該裝置亦包括··-目標材料，其一側向下定位於一滚 動滾子的上表面上，以傳遞至一預定方向，一電極部，其 包括並列地架設在同-平面上，且與目標材料的另一側具 10Explanation of Hoi technology · Various materials, or other materials on the material deposited or bonded surface 10 Cleaning has a considerable impact on the strength and adhesive strength of the adhesive. Related art surface cleaning methods have been developed using several chemicals, and new surface cleaning methods have been developed and used. As for this new surface cleaning method, one of them is a cleaning method using a low temperature plasma and a low voltage plasma. The surface cleaning method using low-pressure plasma generates electropolymerization inside the low-pressure vacuum tank, and has ions or excited gas generated by this electropolymerization in contact with the surface of the material to remove impurities or contaminated materials on the surface of the material . Although it has a good cleaning effect, in fact, the surface cleaning method using a low-pressure plasma is not widely used because it requires a vacuum device to generate a low-pressure plasma, and this cleaning method is difficult to apply to atmospheric pressure. Under continuous execution. Therefore, recent studies on the application of plasma to surface cleaning by generating plasma under atmospheric pressure are currently actively conducted. The cleaning device using atmospheric pressure plasma is operated in the following manner, in which the reaction gas including the non-inert gases Ar, He, N2 and the oxidizing gas 02, c0 and the compressed gas are ejected before reaching the target material to be cleaned, In addition, according to the invention, the electrode is achieved by a roller, and in this state, when a radio frequency (RF) or alternating current (AC) power source is applied, the plasma is formed at atmospheric pressure i atm or about i atm. A conventional device using a plasma to clean a semiconductor device is provided with a cylindrical first electrode into which cooling water flows, and a cylindrical second electrode spaced apart from the first electrode and surrounding the first electrode, such as 1999 It was disclosed on July 16th that the patent application No. u_2037367 (the name of the invention is: plasma processing method and plasma processing device), wherein the device is provided with a separate power supply, An electric field is generated between the first and second electrodes by applying high-frequency electric waves to the first and second electrodes between the first and second electrodes, and a reactive gas is supplied to one between the first and second electrodes. A reaction gas supply port in the space; and a reaction gas outlet port, which injects the reaction gas converted into a plasma state by being supplied between the first and second electrodes to the outside. Therefore, the electric field is formed by transmitting high-frequency electric waves between the first and second electrodes, and the reaction gas is converted into a space between the first and second electrodes by supplying the reaction gas through the reaction gas supply port. Plasma status. In addition, the cleaning method can be performed by spraying the reactive gas in the plasma state on the material to be cleaned to remove the organic material on the surface of the material to be cleaned, wherein the first and second electrodes transmit high-frequency electric waves by While heating to the same temperature, the first electrode is cooled by the cooling water supplied to the first electrode. However, the problem of the conventional plasma processing device is that the size of the target material to be processed is limited because the The reaction gas is sprayed to the outside after the formation of electricity 591714 玖, the invention states that the reaction gas in the polymerization state is reduced, thereby reducing the plasma spraying area. That is, the problem of the plasma gas spray type plasma processing device is that the cleaning time of the device will be longer. This is because although the cleaning method sprays electricity at a time to process a target material with a specific size or smaller than that, however Plasma gas is repeatedly ejected when the target material to be cleaned or the plasma processing device moves while cleaning a material having a specific size or more. In particular, the conventional plasma processing apparatus has a problem in that the target material to be cleaned cannot be cleaned consistently, because the plasma gas is in a specific area of the target 10 material to be cleaned, and the target gas is to be cleaned by moving the gas. There is less contact on a boundary area between the target material or the plasma processing device and other specific areas that receive the plasma gas to clean the target material. In addition, the problem of the plasma processing device is the decrease in cooling efficiency. This is because when the first electrode is cooled by supplying cooling water to the first electrode to cool the first and second electrodes at 15 degrees, the second electrode is not directly and cooled. Water contact. FIG. 1 is an illustration of another cleaning device of a conventional technique. The related art cleaning device is provided with a reaction chamber 2 which performs cleaning of semiconductor devices such as PDp (plasma display panel) and LCD (liquid crystal display) using a reaction gas in a plasma state. As shown in FIG. 1, a reaction gas supply port 10 in which a reaction gas is supplied, and a target material to be cleaned by spraying one of the target materials to be cleaned are formed on one side of the reaction chamber 2, and a plasma is sprayed out. A reaction gas injection port 12 of the reaction gas in a state, and a cleaning target material discharge port 16 for discharging a target material to be cleaned are formed on the other side of the reaction chamber 2. 7 591714 发明, description of the invention In addition, an upper electrode 22 is formed on the upper part of the lower inner side of the reaction chamber 2, a lower electrode 18 is formed on the lower part of the inner side of the reaction chamber 2, and the upper electrode 22 and the lower electrode 18 are connected to the transmissible 1 One of the power supplies 26 of high-frequency power to 10 KHz, in which the surfaces of the upper electrode 22 and the lower electrode 18 are insulated by 5 insulating materials 20 and 24, respectively, to prevent arcing, and several perforations (not shown) are formed on the lower electrode 18 As shown in FIG. 2, when the target material to be cleaned moves vertically through the perforation, a pin 19 that can raise or lower the target material to be cleaned is erected in the perforation. · Therefore, the target material to be cleaned is positioned on the upper part of the lower electrode 18 through the cleaning target material supply port 14 by a robotic arm moving device 10. The pin 19 of the lower electrode 18 protrudes upward from the surface of the lower electrode 18 through the hole, and receives the target material to be cleaned by the mobile device of the robot arm, and moves to the lower part of the perforation, so that the target material to be cleaned is positioned on the lower electrode j 8 . 15 When high-frequency power of 1 to 10 κΗζ is transmitted to the upper and lower electrodes 22 and 18 through the power supply 26, an electric field is formed in the reaction chamber 2 and a reaction gas is supplied into the reaction chamber 2. The electric field is supplied through the reaction gas The port 10 is formed in the reaction chamber 2. Therefore, the reaction gas supplied to the reaction chamber 2 is activated by an electric field 20 and converted into a plasma. When the electric field is formed between the upper electrode 22 and the lower electrode 18 by the power supply 26 transmitting high-frequency power of 1 to 10 KHz, the electrode is ejected from an upper electrode 22 or the lower electrode 18, and the electrode collides with the reaction gas. The outermost electrode of the reaction gas is separated to the outside to form an ion, electrode, and carbon group. 8) The invention states a plasma state coexisting. The reaction gas in the plasma state reacts with a target material to be cleaned in a reaction chamber 2 to remove particles of organic and inorganic materials existing on the surface of the target material to be cleaned. In addition, when completed in the reaction chamber 2 using the «-cleaning method, the pin 19 of the lower electrode 18 protrudes upward from the lower electrode 18 through the perforation to separate the target material to be cleaned from the lower electrode 18 and the pin 19 from the lower electrode ^ The separated target material to be cleaned is then discharged to the outside of the reaction chamber 2 by cleaning the target material discharge port 16 through a moving device such as a robot arm. However, the conventional plasma cleaning device has a problem in that the target material to be cleaned by the upper and lower electrodes is destroyed by the heat emitted from the upper and lower electrodes, because although the upper and lower electrodes use high-frequency power to rise to a high temperature A separate cooling device is not provided in the plasma cleaning device. In addition, the problem of the radon cleaning device is that the size of the reaction furnace is limited, such as the installation space, the size of the upper electrode and the lower electrode, and the cleaning power of the target material to be cleaned is limited by the injection and consumption device of the reaction furnace. In particular, the cleaning method cannot be performed on a target cleaning material having a certain size or more, because the target cleaning material cannot be easily injected into the reaction furnace and discharged therefrom. In addition, several holes are formed on the surface of the lower electrode, so that the positive charge of the reaction gas converted into the plasma state in the reaction furnace is collected in the perforations, so that the density consistency of the plasma is reduced, and on the surface of the low electrode An insulator is engraved with a positive charge to produce arcing due to insulation failure. At the same time, 'Japanese Patent Application No. 8-321397 (invention name: 591714 玖, description of the device and method for generating atmospheric piezoelectric slurry) discloses an exemplary device for generating atmospheric piezoelectric slurry. The device has the following structure: An example device for generating atmospheric piezoelectric slurry, in which an electrode port provided is composed of an electrode connected to an AC power source and 5 ground electrodes, and an AC electric field is applied to the electrode port in the presence of a gas. The middle allows plasma generated by light emission to be generated under atmospheric pressure, and the device further includes an insert element formed by coating an insulating material on the front surface of the conductor to fill the middle of the electrode portion. · However, if the 10 interference elements filled in the front surface of the conductor coated with an insulating material are in the middle of the electrode portion, the reaction gas must pass through the interference elements so that the fluid flow is disturbed and the plasma generation efficiency is reduced. In addition, there is a possibility of danger due to exposure of the inner conductor of the interference element to the outside. In the device for generating an atmospheric pressure plasma having the above structure, 15 supplies gas to the middle of the electrode portion to generate a plasma. At the same time, the supplied gas must be evenly supplied to complete a uniform plasma. · In addition, when the electrodes on the electrode section are erected in parallel up and down, and the target material to be cleaned is positioned between these electrodes, the target material is the influence of the electric field generated by the electrode, and the metal thin film formed on the target material can be 20 can be destroyed. In addition, the target material must be positioned between the upper and lower electrodes to complete the cleaning step. As a result, only very shallow flat materials can be processed and their applications are limited. In addition, as described above, the electrodes are arranged on top of each other, and the target material is positioned 10 591714 玖, description of the invention In the internal condition between these electrodes, the formation of the electric field generated by these electrodes allows the electric field to pass through the target material. Therefore, the metal thin film, such as the pattern on the target material, may be damaged. [Summary of the invention 3 5 Abstract of the invention In order to solve the above problems, the purpose of the present invention is to prepare a cleaning device using atmospheric piezoelectric slurry, which can shorten the cleaning time by not limiting the size and shape of the target cleaning target material and cleaning the cleaning target material. . Another object of the present invention is to provide a cleaning device 'using an atmospheric piezoelectric slurry, which can improve the consistency of cleaning of a target material to be cleaned. Another object of the present invention is to provide a cleaning device 'using an atmospheric piezoelectric slurry in which the electrodes can be efficiently cooled. Another object of the present invention is to provide a cleaning device using an atmospheric piezoelectric plasma, which can prevent the temperature of the electrode from increasing to a high temperature by forming a plasma using low-frequency electric waves. Another object of the present invention is to provide a cleaning device using an atmospheric piezoelectric plasma, which prevents a decrease in the consistency of the density of the plasma by perforations formed on the electrode surface supporting the target material to be cleaned, and Arc caused by failure of the insulator. 20 Another object of the present invention is to provide a cleaning device using an atmospheric piezoelectric slurry. The electrode can be arranged in parallel with the substrate of the target material by arranging the metal film formed on the target material by the electric field generated by the electrode portion. And was destroyed. Another object of the present invention is to prepare a cleaning device 11 591714 (U.S.A.) using an atmospheric piezoelectric slurry, an invention description device, which can generate a uniform plasma by improving a gas supply structure. In order to achieve the above object, each device using an atmospheric piezoelectric slurry according to the present invention includes: a reaction gas supply unit capable of supplying a reaction gas having a certain pressure to a lower portion; A reaction gas suction portion that is separated from the reaction gas supply portion and is flat, and the suction portion sucks out and emits the supplied reaction gas to a certain pressure; an electrode portion that includes an erecting portion parallel to the reaction gas supply portion, and Between the reaction gas supply part and the reaction gas suction part, and a fixed body of an insulating material is inserted between the first and second electrodes therebetween; a power supply which can be supplied to the first and second electrodes by applying 10 plus one power The second electrode forms an electric field under the first and second electrodes; and a table positioned below the reaction gas supply portion, the reaction gas suction portion, and the electrode portion, and supports a target material to be cleaned. The reaction gas supply section includes a reaction gas supply tube on one inner side of the supply section 15 and the other side of the supply section is wrinkled with a plurality of oppositely formed ones on the surface of the reaction gas supply tube. Reaction gas supply port. The reaction gas suction portion includes a reaction gas suction tube 'on the inner side of one side, and a wrinkle on the other side of the suction portion is a reaction gas suction port formed oppositely on the surface of the reaction gas suction tube. 2 ′ In addition, the diameter of the reaction gas suction port is larger than that of the reaction gas supply port, a plurality of protrusions and grooves are formed on the first and second electrodes to increase the surface area thereof, and the first and second electrodes are embossed. In addition, the first and second electrodes are positioned on an insulator such as glass, and the surfaces of the first and second electrodes are galvanized. 12 591714 发明, description of the invention The device further includes a cooling fan, which is arranged above the electrodes to cool the first and second electrodes. The reaction gas supply part, the electrode part, and the reaction gas suction part are integrally molded, and the reaction gas supply part, the electrode part, and the reaction gas suction part are -supported @ 定 在 _OPERATION㈣ ceiling. In addition, several rollers are formed on the surface of the table so that the target material to be cleaned positioned on the table moves from one side to the other by the rollers. The device also includes a target material, one side of which is positioned downward on an upper surface of a rolling roller to transmit to a predetermined direction, and an electrode portion, which includes side-by-side erection on the same plane, and The other side of the target material has 10
有-預定間隔的兩個電極，以及提供—狀電壓至電極部 的一電力供應器。 同 該電極部包括第一及第二電極， 且此兩個電極面積相 用以限制電流的電阻分別連接至在第一及第二電極之 b間的一連接電線。該電阻之值為為5_-ΐ5〇]ίΩ。There are two electrodes at a predetermined interval, and a power supply that supplies a similar voltage to the electrode portion. The electrode part includes first and second electrodes, and the resistances of the two electrode areas that are used to limit the current are respectively connected to a connection wire between b of the first and second electrodes. The value of this resistance is 5_-ΐ5〇] ίΩ.
電流供應器供應l〇〇Hz-ikHz之頻率及5-i〇kV(p~p)之 電壓。 電極部之各電極架設成使得電極可維持一預定的間隙 。谷亥預疋之間距為1〇随-15咖。 ί〇 ,目標材料及電極部之間的間距為2_ι-5丽。 此外，一絕緣元件備置在構成電極部的各電極之下方 ，且備置用以覆蓋各電極的—上部份及兩側邊的_絕緣蓋 〇 此外，電極部包括比例為1:2:1的第一、第二及第 13 591714 玖、發明說明 三電極，而相同的電壓施加至第一及第三電極，而一不同 的電壓施加於第二電極。 用以限制電流的電阻連接至第二電極及電力供應器之 間的一連接電線。電阻值為1()kQ—150ki}。 5 一絕緣元件備置在構成電極部之各電極的下方，且備 置用以覆蓋各電極的一上部份及兩侧邊的一絕緣蓋。該絕 緣元件及絕緣蓋以玻璃、石英或陶瓷製成。 該裝置亦包括：一目標材料，其一側向下定位於一滾 動滾子的上表面上，以傳遞至一預定方向，一電極部，其 10包括並列地架設在同一平面上，且與目標材料的另一側具 有一預定間隔的兩個電極，以及提供一預定電壓至電極部 的電力供應器，用以供應預定之氣體至電極的一上表面 及目標材料的一氣體供應部，使得供應之氣體可均勻地備 置在目標材料的整體上，其中該氣體供應部包括：氣體備 15置於其上的一氣體供應部；用以與自氣體供應部備置之氣 體維持一預定間距的一氣體緩衝部；以及藉由氣體緩衝部 噴灑以氣體維持之均勻壓力於目標材料之一上表面上的一 喷嘴部。 該氣體緩衝部構形成使得數個具有氣體通過孔的障板 2〇以疊置方式架設，而形成在各障板上的氣體通過孔交替地 定位。 氣體供應部定位在電極部之端上，其由目標材料之傳 遞方向看來為目標材料的入口位置。 該氣體由Αι:或He構成，其為惰性氣體或該氣體之混 14 玖、發明說明 σ物。在S亥混合物中Ar與He之比例為1 : 1 -5 : 1。 圖式簡單說明 本發明的上述目標、特徵及優點將在下文配合圖式之 說明而更加清楚，其中： 5 第1圖為使用大氣壓電漿之一習知清潔裝置的概略構 造圖； 第2圖為第1圖中所示的下電極之詳細橫截面圖； 第3圖為依據本發明的一實施例之使用大氣壓電漿的 一清潔裝置的一橫截面圖； 10 第4圖為使用第3圖中所示之大氣壓電漿之清潔裝置 的底視圖； 第5圖為藉由第3及4圖中所示之第一及第二電極而 說明一電場的形成狀態之圖式； 第6圖為顯示依據本發明之另一實施例的使用大氣壓 15 電漿之清潔裝置的構造之圖式； 第7圖為顯示依據本發明之另一實施例的使用大氣壓 電漿之清潔裝置的構造之圖式； 第8圖為由第6圖之電極部所產生的電場之狀態圖； 第9圖為由第7圖之電極部所產生的電場之狀態圖； 2〇 第1〇圖為依據本發明的另一實施例之氣體供應裝置 的構造圖。 C實施方式3 1娃實施例之詳細說明 本發明將配合圖式及較佳實施例詳加說明，而在圖式 15 591714 玖、發明說明 中相同的標號代表相同的元件。 [第一實施例] 第3圖為依據本發明的一實施例之使用大氣壓電漿的 一清潔裝置的一橫截面圖。第4圖為使用第3圖中所示之 5 大氣壓電漿之清潔裝置的底視圖。 在依據本發明之使用大氣壓電漿之半導體裝置清潔裝 置中，一反應氣體供應部30、一電極部32以及一反應氣 體吸出部34以一第一支持部52及一第二支持部54固定至 一操作室的天花板，且具以如第3圖中所示的間距相互分 10 開。 此外，反應氣體供應部30設有可供應具有壓力的反應 氣體，如氧氣（〇2)、氬氣（Ar)及氫氣（N2)至下方的一反應氣 體供應管36。其中反應氣體供應管36架設在反應氣體供 應部30的下方，而數個反應氣體口 38形成在反應氣體供 15 應管36的表面上。The current supplier supplies a frequency of 100 Hz-ikHz and a voltage of 5-i0kV (p ~ p). Each electrode of the electrode part is set up so that the electrodes can maintain a predetermined gap. The distance between Guhai pre-announcements is 10 and -15 coffee. ί〇, the distance between the target material and the electrode part is 2_5-5 li. In addition, an insulating element is provided below each electrode constituting the electrode portion, and an insulating cover is provided to cover the upper part and both sides of each electrode. In addition, the electrode portion includes a ratio of 1: 2: 1. First, second, and thirteenth 591714 (3) The invention describes three electrodes, and the same voltage is applied to the first and third electrodes, and a different voltage is applied to the second electrode. A resistor for limiting the current is connected to a connection wire between the second electrode and the power supply. The resistance value is 1 () kQ—150ki}. 5 An insulating element is provided below each electrode constituting the electrode portion, and an insulating cover is provided to cover an upper portion of each electrode and both sides. The insulating element and insulating cover are made of glass, quartz or ceramic. The device also includes: a target material, one side of which is positioned downward on an upper surface of a rolling roller to be transmitted to a predetermined direction, an electrode portion, 10 of which includes a parallel arrangement on the same plane, and the target material The other side of the electrode has two electrodes with a predetermined interval, and a power supply unit that provides a predetermined voltage to the electrode portion to supply a predetermined gas to an upper surface of the electrode and a gas supply portion of the target material, so that The gas can be uniformly prepared on the entirety of the target material, wherein the gas supply section includes: a gas supply section on which the gas backup 15 is placed; and a gas buffer for maintaining a predetermined distance from the gas prepared from the gas supply section And a nozzle portion sprayed on the upper surface of one of the target materials with a uniform pressure maintained by gas sprayed by the gas buffer portion. The gas buffer portion is formed such that a plurality of baffle plates 20 having gas passage holes are erected in a stacked manner, and the gas passage holes formed on each of the baffle plates are alternately positioned. The gas supply portion is positioned on the end of the electrode portion, and it appears as the entrance position of the target material from the direction of the target material transfer. The gas is composed of Al: or He, which is an inert gas or a mixture of the gases. The ratio of Ar to He in the Hai mixture is 1: 1 to 5: 1. The drawings briefly explain the above-mentioned objectives, features and advantages of the present invention, which will be made clearer with the description of the drawings, in which: 5 FIG. 1 is a schematic structural diagram of a conventional cleaning device using an atmospheric piezoelectric slurry; FIG. 2 Fig. 1 is a detailed cross-sectional view of the lower electrode shown in Fig. 1; Fig. 3 is a cross-sectional view of a cleaning device using an atmospheric piezoelectric slurry according to an embodiment of the present invention; Bottom view of the cleaning device for atmospheric piezoelectric slurry shown in the figure; FIG. 5 is a diagram illustrating the formation state of an electric field by using the first and second electrodes shown in FIGS. 3 and 4; FIG. 6 FIG. 7 is a diagram showing a structure of a cleaning device using an atmospheric pressure 15 plasma according to another embodiment of the present invention; FIG. 7 is a diagram showing a structure of a cleaning device using an atmospheric piezoelectric plasma according to another embodiment of the present invention Fig. 8 is a state diagram of the electric field generated by the electrode portion of Fig. 6; Fig. 9 is a state diagram of the electric field generated by the electrode portion of Fig. 7; Fig. 10 is according to the present invention Structure of another embodiment of the gas supply device Fig. C Embodiment 3 Detailed Description of the Example The present invention will be described in detail with reference to the drawings and preferred embodiments, and the same reference numerals in drawings 15 591714 (1) and the description of the invention represent the same elements. [First Embodiment] Fig. 3 is a cross-sectional view of a cleaning device using an atmospheric piezoelectric slurry according to an embodiment of the present invention. Fig. 4 is a bottom view of the cleaning device using the 5 atmospheric piezoelectric paste shown in Fig. 3. In a semiconductor device cleaning device using an atmospheric piezoelectric slurry according to the present invention, a reaction gas supply portion 30, an electrode portion 32, and a reaction gas suction portion 34 are fixed to a first support portion 52 and a second support portion 54 to The ceiling of an operation room is separated from each other at a distance as shown in FIG. 3. In addition, the reaction gas supply section 30 is provided with a reaction gas supply pipe 36 that can supply pressured reaction gases such as oxygen (02), argon (Ar), and hydrogen (N2) to the lower side. The reaction gas supply pipe 36 is installed below the reaction gas supply unit 30, and a plurality of reaction gas ports 38 are formed on the surface of the reaction gas supply pipe 36.
電極部32為中空盒子形狀，而可強力地向外汲取電極 部32之内部空氣一第一冷卻風扇40a及一第二冷卻風扇 40b架設在電極部32的上方。 尤其是，絕緣材料製成的一固定體46置於在電極部 20 32内的第一電極44a及第二電極44b之間，使得固定體46 平行於反應氣體供應部30及反應氣體吸出部34，且第一 電極44a及第二電極44b固定在第一絕緣玻璃42a及第二 絕緣玻璃42b上，以阻止弧光的產生。 數個突出部及凹槽形成在第一電極44a及第二電極 16 591714 玖、發明說明 44b的上方，以藉由增加表面積而改良輻射的效果，而其 上形成突出部及凹槽的第一電極44a及第二電極44b以浮 凸處理，以另藉由增加外表面積而改良輻射效果及電漿密 度。 5 此外，第一電極44a及第二電極44b連接至可傳輸The electrode portion 32 is in the shape of a hollow box, and the internal air of the electrode portion 32 can be strongly drawn outward. A first cooling fan 40a and a second cooling fan 40b are installed above the electrode portion 32. In particular, a fixed body 46 made of an insulating material is interposed between the first electrode 44a and the second electrode 44b in the electrode portion 2032, so that the fixed body 46 is parallel to the reaction gas supply portion 30 and the reaction gas suction portion 34. The first electrode 44a and the second electrode 44b are fixed on the first insulating glass 42a and the second insulating glass 42b to prevent the generation of arc light. A plurality of protrusions and grooves are formed above the first electrode 44a and the second electrode 16 591714 发明, the invention description 44b, to improve the radiation effect by increasing the surface area, and the first and second protrusions and grooves are formed thereon. The electrodes 44a and the second electrode 44b are embossed to improve the radiation effect and the plasma density by increasing the external surface area. 5 In addition, the first electrode 44a and the second electrode 44b are connected to a transmissible
1KV至8KV之輸出電壓以及100Hz至ΙΚΗζ之低頻電力的 一電力供應器62，如第5圖所示，使得一電場藉由電力供 應器62之低頻電力之傳輸形成在第一電極44a及第二電極 44b的下方。 10 反應氣體吸出部34設有一反應氣體吸出管48，其可 自反應氣體供應部30吸出排至其底部的反應氣體，如氧氣 、氬氣及氫氣至下方，並強力地加壓至某一壓力。 反應氣體吸出管48架設至反應氣體吸出部34的下方 ，而數個直徑大於反應氣體口 38的反應氣體吸出口 50形 15 成在反應氣體吸出管48的表面上。An electric power supply 62 having an output voltage of 1KV to 8KV and low-frequency power of 100Hz to 1KΗζ, as shown in FIG. 5, causes an electric field to be formed on the first electrode 44a and the second electrode by the transmission of the low-frequency power of the power supply 62. Below the electrode 44b. 10 The reaction gas suction section 34 is provided with a reaction gas suction pipe 48, which can suck the reaction gas discharged to the bottom from the reaction gas supply section 30, such as oxygen, argon, and hydrogen, and pressurize it to a certain pressure. . The reaction gas suction pipe 48 is set up below the reaction gas suction section 34, and a plurality of reaction gas suction ports 50 having a diameter larger than the reaction gas port 38 are formed on the surface of the reaction gas suction pipe 48.
當仔細地觀看第4圖的反應氣體供應管36、絕緣玻璃 42a、42b、電極44a、44b以及反應氣體吸出管48之配置 狀況時，可看出反應氣體供應管36配置成與反應氣體吸出 管48有一段間距，而第一電極44a及第二電極44b架設在 20 反應氣體供應管36及反應氣體吸出管48之間的第一絕緣 玻璃42a及第二絕緣玻璃42b上。 反應氣體供應管36及反應氣體吸出管48由鼓風管構 成，在其内部形成皺折，而反應氣體供應管36及反應氣體 吸出管48的一側及另一側的皺折方向相反，使得反應氣體 17 591714 玖、發明說明 很容易地被供應及消耗。 亦即，朝右皺折形成在反應氣體供應管36及反應氣體 吸出管48之一的内側上，而朝左皺折形成在另一反應氣體 供應管36或反應氣體吸出管48的内侧上。 5 因此，流入反應氣體供應管36的反應氣體很容易地藉 由在反應氣體供應管36之内側上的皺折形成的轉動流動而 供應至反應氣體供應管36的中心内部，而流入反應氣體吸 出管48之反應氣體吸出口 50中的反應氣體很容易地藉由 形成在反應氣體吸出管48之内側上的皺折形成之轉動流動 10 排至反應氣體吸出管48的端部。 支持擬清潔之目標材料60的一桌56備置在與反應氣 體供應部30、反應氣體吸出部34及電極部32以大約3至 6mm的間距（D)相距的下方位置，亦即，藉由自電力供應 器62輸送至第一電極44a及第二電極44b之電力而形成於 15 第一電極44a及第二電極44b之下方的電場之最大影響範 圍内，其中數個用以自一側移動擬清潔之目標材料60至另 一側的滚子58架設在桌56上。 以下將詳細說明依據本發明之使用大氣壓電漿清潔半 導體裝置之裝置的構造。 20 當擬清潔目標材料60如PDP(電漿顯示板）、LCD(液晶 顯示器）或架設在依據本發明之使用大氣壓電漿之用以清潔 半導體之裝置中的桌56上，而桌56上的滚子正在轉動時 ，擬清潔目標材料60自一側移動至另一側。 清潔方法可藉由定位擬清潔目標材料60於桌56上， 18 591714 玖、發明說明 而執灯而不限制定位在桌56上的擬清潔目標材料⑼之 尺寸及形狀，因為桌56的所有側面方向均完全地打開。 在桌56上的擬清潔目標材料6〇移動的過程中，反應 氣體供應部的反應氣體供鮮36通過在某—壓力下的反應 5 氣體供應口 38朝向卓56供廡石n ft ^ xl ^ ^ U呆供應如虱、虱及氫氣之定量反應 乳體’其中反應氣體供應管36由鼓風管構成，其中皺折相 反地形成在管的-部份及另一部份的内側，使得流至反應 氣體ί、應^ 3 6中的反應氣體藉由轉動流動平順地移動至反 · 應氣體供應管36的中間部，以朝向桌56而喷出。 1〇 此外，電力供應器62藉由1KV至8KV的輸出電壓輸 送100Hz至IKHz低頻電力至鋁材料的第一電極4私及第 二電極44b，使得電場形成在第一電極44a及第二電極4朴 的下方。 當在桌56上的擬清潔目標材料60通過電場時，供應 15至桌56的一方向之喷出的反應氣體朝上方反應，並聚集在 電場中，使得反應氣體由電場起動，以轉換成電漿狀態， 馨 其中碳、電子及原子團共存，而在電漿狀況下的反應氣體 與在擬清潔目標材料之表面上的雜質反應，使得在擬清潔 目標材料60上的雜質如有機物質及金屬物質一起被移除。 20 清潔時間很短，因為清潔在擬清潔目標材料60被桌 56上的滾子58移動的過程中在擬清潔目標材料6〇上共同 地執行，且十分均勻地清潔，因為清潔係在擬清潔目標材 料60的上表面的整個區上藉由擬清潔目標材料60之移動 而完成。 19 591714 玖、發明說明 此外，第一電極44a及第二電極44b的表面以浮凸處 理，使得外表面積增加，以改良電場之密度，因而形成高 密度的電漿。When carefully looking at the arrangement of the reaction gas supply pipe 36, insulating glass 42a, 42b, electrodes 44a, 44b, and reaction gas suction pipe 48 in FIG. 4, it can be seen that the reaction gas supply pipe 36 is configured to be connected with the reaction gas suction pipe 48 has a distance, and the first electrode 44a and the second electrode 44b are erected on the first insulating glass 42a and the second insulating glass 42b between the reaction gas supply pipe 36 and the reaction gas suction pipe 48. The reaction gas supply pipe 36 and the reaction gas suction pipe 48 are constituted by a blower pipe, and a wrinkle is formed in the inside, and the wrinkle directions of one side and the other side of the reaction gas supply pipe 36 and the reaction gas suction pipe 48 are opposite, so that The reaction gas 17 591714 K, the invention description can be easily supplied and consumed. That is, a wrinkle is formed on the inside of one of the reaction gas supply pipe 36 and the reaction gas suction pipe 48 to the right, and a wrinkle is formed on the inside of the other reaction gas supply pipe 36 or the reaction gas suction pipe 48 to the left. 5 Therefore, the reaction gas flowing into the reaction gas supply pipe 36 is easily supplied into the center of the reaction gas supply pipe 36 by the rotational flow formed by the wrinkles on the inside of the reaction gas supply pipe 36, and the reaction gas flowing in is sucked out The reaction gas in the reaction gas suction port 50 of the pipe 48 is easily discharged to the end of the reaction gas suction pipe 48 by the rotational flow 10 formed by the crease formed on the inside of the reaction gas suction pipe 48. A table 56 supporting the target material 60 to be cleaned is provided below the reaction gas supply portion 30, the reaction gas suction portion 34, and the electrode portion 32 at a distance (D) of approximately 3 to 6 mm, that is, by The power supplied by the power supply 62 to the first electrode 44a and the second electrode 44b is formed within the maximum influence range of the electric field under the first electrode 44a and the second electrode 44b, and several of them are used to move the The clean target material 60 to the roller 58 on the other side are mounted on the table 56. The structure of an apparatus for cleaning semiconductor devices using an atmospheric piezoelectric slurry according to the present invention will be described in detail below. 20 When the target material 60 to be cleaned, such as a PDP (Plasma Display Panel), LCD (Liquid Crystal Display), or a table 56 in a device for cleaning semiconductors using an atmospheric piezoelectric plasma according to the present invention, While the roller is rotating, the cleaning target material 60 moves from one side to the other. The cleaning method can be performed by positioning the quasi-cleaning target material 60 on the table 56, 18 591714 玖, description of the invention without restricting the size and shape of the quasi-cleaning target material 定位 located on the table 56 because all sides of the table 56 The directions are fully open. During the movement of the target material 60 to be cleaned on the table 56, the reaction gas supply 36 of the reaction gas supply part passes the reaction under a certain pressure 5 and the gas supply port 38 faces the shovel 56 for the flint n ft ^ xl ^ ^ Supply of quantitative reaction milk such as lice, lice, and hydrogen ', wherein the reaction gas supply pipe 36 is constituted by a blower pipe, and wrinkles are formed on the inside of the-part of the tube and the other part of the tube, so that the flow The reaction gas in the reaction gas ί and the reaction gas 36 moves smoothly to the middle portion of the reaction gas supply pipe 36 by the rotating flow so as to be ejected toward the table 56. 10 In addition, the power supply 62 transmits 100Hz to IKHz low-frequency power to the first electrode 4b and the second electrode 44b of aluminum material through an output voltage of 1KV to 8KV, so that an electric field is formed in the first electrode 44a and the second electrode 4 Bottom of Park. When the to-be-cleaned target material 60 on the table 56 passes through the electric field, the reaction gas sprayed from one direction supplying 15 to the table 56 reacts upward and gathers in the electric field, so that the reaction gas is activated by the electric field to be converted into electricity. In the slurry state, carbon, electrons, and atomic groups coexist, and the reaction gas in the plasma state reacts with impurities on the surface of the target material to be cleaned, so that impurities such as organic substances and metal substances on the target material 60 to be cleaned Removed together. 20 The cleaning time is very short because cleaning is performed collectively on the target material 60 to be cleaned while the target material 60 to be cleaned is moved by the roller 58 on the table 56, and the cleaning is performed very uniformly because the cleaning The entire area of the upper surface of the target material 60 is completed by the movement of the target material 60 to be cleaned. 19 591714 发明 Description of the invention In addition, the surfaces of the first electrode 44a and the second electrode 44b are embossed to increase the external surface area and improve the density of the electric field, thereby forming a high-density plasma.
電力供應器以1至8KV之輸出電壓傳輸100Hz至 5 ΙΚΗζ之低頻電力至第一電極44a及第二電極44b，使得相 當少量的熱產生於第一電極44a及第二電極44b上。產生 於第一電極44a及第二電極44b上的熱藉由第一冷卻風扇 40a及第二冷卻風扇40b之驅動而以空氣冷卻。 尤其是，數個表面以浮凸處理過的數個凹槽及突出部 10 裝設於第一電極44a及第二電極44b的上方，以增加外表 面積，以平順地發散熱，使得第一電極44a及第二電極 44b十分快速地冷卻，而鋁材料之第一電極44a及第二電 極44b的表面電鍍，以阻止第一電極44a及第二電極44b 的表面腐蝕，並改良輻射及絕緣效果。 15 此外，噴至桌56並以形成在第一電極44a及第二電極The power supply transmits low-frequency power from 100 Hz to 5 IKΗζ to the first electrode 44a and the second electrode 44b at an output voltage of 1 to 8KV, so that a relatively small amount of heat is generated on the first electrode 44a and the second electrode 44b. The heat generated on the first electrode 44a and the second electrode 44b is cooled by air by driving the first cooling fan 40a and the second cooling fan 40b. In particular, several grooves and protrusions 10 whose surfaces have been embossed are installed above the first electrode 44a and the second electrode 44b to increase the external surface area and to smoothly dissipate heat so that the first electrode 44a and the second electrode 44b are cooled very quickly, and the surfaces of the first electrode 44a and the second electrode 44b of aluminum material are plated to prevent the surface corrosion of the first electrode 44a and the second electrode 44b and improve the radiation and insulation effects. 15 In addition, spray to the table 56 to form the first electrode 44a and the second electrode
44b下方的電場轉換成電漿狀態之反應氣體被吸至在某一 壓力下的反應氣體吸出管48之反應氣體吸出口 50中，並 排至外面。 尤其是，反應氣體吸出管48由一鼓風管構成，其中皺 20 折相反地形成在一部份及另一部份的内側，使得通過反應 氣體吸出口 50流至反應氣體吸出管48中的反應氣體平順 地藉由轉動流動移動至反應氣體吸出管48的端部，並排至 外部。 形成在反應氣體吸出管48的表面上之反應氣體吸出口 20 591714 玫、發明說明 50的直徑大於反應氣體供應口 38的直徑，使得反應氣體 的吸出可平順地進行。 參看第6及8圖，以下將詳細說明依據本發明的另一 實施例之使用大氣壓電漿之清潔裝置的構造及操作。 5 [第二實施例] 如第6圖所示，用以向下設定目標材料s於其上表面 上以及當轉動滾子101以-預定方向轉動時傳送目標材料 S的數個轉動滾子1〇1以一預定間隔備置。那時，轉動滾 · 子101以未顯示的一桌支持。 10 在面對轉動滚子101的目標材料s之另一侧上，由第 一及第二電極103a、103b構成的電極部1〇3以一預定間距 D〗並列地配置在同一平面上，以產生一弧形電場。 如上述，第一及第二電極103a及1〇3b並列地架設在 同一平面上，而目標材料s定位在下方，以產生一弧形電 15場，如第8圖所示，如此可解決金屬薄膜，尤其是，在電 極架設成上下位置的狀況下當目標材料s通過電場時，目 鲁 標材料S上形成的圖樣損壞的問題。 第一及第二電極103a及1〇3b以一預定間距D2分開地 架設，一絕緣元件105備置在各電極的下側，而一絕緣蓋 20 107分別備置在上方及側邊上。 此處，若間距太寬，則電漿產生狀況未滿足，若預 定間距D2太窄，則電漿在產生時稠密地集中在該間距本身 上，使得第一電極l〇3a、l〇3b與絕緣蓋107 一起破壞。因 此’預疋間距D2最好為10mm-15mm。 21 591714 玖、發明說明 同時，一電力供應器109與第一電極i〇3a、1〇3b相連 ’以供應預定之電壓。 自電力供應器109供應的電壓最好為具有i〇〇Hz_lkHz 頻率的 5kV-l〇kV(P-P)AC 電壓。 5 此時，第一及第二電極l〇3a、103b的面積比例為i : 1。如此可維持電流之平衡。 此外’用以限制電流的電阻113a、113b備置在電力供 應連接電線上，以連接第一及第二電極103a、l〇3b及電力 供應器109。電阻113a、113b用來阻止目標材料s及包括 10絕緣元件105的第一及第二電極103a、103b在未執行清潔 數個電極及離子在目標材料s及電極部1〇3之間增加時， 目標材料s及電極部103之間的間距Di由於電流之增加而 受破壞。 目標材料s及電極部103之間的間距Di最好為 15 2.0mm_5mm 〇 絕緣元件105及絕緣蓋107以如玻璃、石英或陶瓷之 絕緣材料製成，以保護電極部1〇3，防止弧光之產生，並 降低靜電。 [第三實施例] 2〇 在下文中，同一標號用以代表第ό及8圖中的相同元 件’以省略其詳細的說明。 如第7圖所示，電極部1〇3,的電極由第一、第二及第 三電極 103a，、l〇3b，、1〇3e，構成。 第一、第二及第三電極l〇3a，、l〇3b，及103c，的面積比 22 591714 玖、發明說明 為1 : 2: 1，且相同的電壓施加於第一及第三電極1〇3a，及 l〇3c’，而與上述電壓不同的一電壓施加於第二電極i〇3b， 〇 此外，電阻117連接在連接第二電極1〇3b，及電力供 5應器109之間的電線之一電力供應器上。此處，電阻之值 最好為50kD-150kD之間。 第一、第二及第三電極103a，、l〇3b，及l〇3c，之面積比 例為1 : 2 : 1，相同的電壓施加於第一及第三電極1〇3&，及 · l〇3c’，而一不同的電壓施加至第二電極1〇3b，，如此可達 10成第1圖中藉由使用三個電極形成的兩對電極所完成的效 果。 此種構造之優點在於減少佔據空間，以增加有限空間 之應用。 電阻117較第6圖中之電阻llla及llb小的原因在於 15電場E以兩個方向朝第一及第二電極i〇3a，及i〇3c，產生， 如第8圖所示，而電流量與第6圖相較相當小。 · 由電力供應器109供應的電壓，在目標材料s及電極 103’之間的間距Dl，在第一及第二及第三電極1〇3,、 l〇3b’及103c’之間的間距A與第6圖中所示的相同。因此 20 ，省略其說明。 此外，絕緣元件1〇5及絕緣蓋107與第6圖中所示的 相同。 [第四實施例] 參看第6、7、1〇圖，以下將說明產生電漿之一氣體供 23 591714 玖、發明說明 應構造。 如第ίο圖所示，備置用以供應氣體於電極部 103(103’）及目標材料S之間。 氣體供應裝置300具有一預定的氣體緩衝結構，以在 5 均勻的壓力下供應氣體至電極部103(103’）及目標材料S之 間。 尤其是，氣體供應裝置300包括：具有一氣體供應口 302a的一本體302,氣體自未顯示的氣體供應源供應至其 上；一氣體緩衝部305，其構成用以維持自氣體供應口 10 302a供應的氣體之預定空間；以及一喷嘴部307，其用以 噴灑由於氣體緩衝部305而維持均勻之氣體至目標材料S 的上表面。 在第6及7圖中，本體302製成T字形，並備置具有 内側為V字形凹槽309a的一連接塊309，然後本體302插 15 入凹槽309a中，以形成一三角形的空間部，並形成氣體緩 衝部305。喷嘴部307通過構成空間部的下側上之頂點。 具有數個氣體通過孔401a的障板401備置在氣體緩衝 部上，而形成在各障板401上的氣體孔401a交替地配置， 使得氣體流延滯。 20 如第1及2圖所示，氣體供應裝置300最好相對於目 標材料S傳送之方向定位在電極部103(103’）的下方。 藉由具有上述構造之氣體供應裝置300自氣體供應源 供應的氣體由於氣體緩衝部305而達成均勻壓力的分佈， 並均句地喷灑在目標材料S的上表面上，以使得產生在目 24 591714 玖、發明說明 標材料s的上表面之緊密度均勻，並改良清潔效率。 使用之供應氣體為惰性氣體，如氬或氫，或其混合物 ，而混合物中氬與氫的比為丨：1-5 : 1。 在如上述之氣體供應裝置中，為去除加入氧至惰性氣 5體中以去除大量有機物質而產生的臭氧（〇2)(03)，可沿著擬 輸送之目標材料的方向架設一廢氣吸出口於電極部 103(103，）的端部。 上述第一至第四實施例中的清潔裝置用以去除形成在 fl 多種有機薄膜、高聚合物薄膜、金屬、鉻化合物、氮化矽 10薄膜（SlsN4)，為平面顯示器（FpD)之LCD之玻璃基板，或 有機電子燈(EL)，或ΓΓΟ(氧化錫銦）薄膜的表面上形成的天 然氧化薄膜，或使表面具有親水性。 尤其是，若金屬薄膜或高聚合物薄膜在塗敷感光劑之 前清潔，感光劑可均勾地塗在薄膜上，使感光力增加有機 15物質在塗敷或沉積薄膜之前之後，以及感光劑在餘刻後去 除之後的清潔效果均可被期待。 · 本發明不僅由於不限制擬清潔目標材料之尺寸及形狀 而縮短了清潔時間’同時亦由於未分類地清潔而改良了清 潔的一致性。 20 本發明不僅改良了電極冷卻效果，藉由在電極上形成 凹槽及突出部’以及在凹槽及突出部上作浮凸表面處理而 形成高密度電紫，亦可因使用聰z至1KHz的低頻電波 而限制電極上熱的產生。 此外’擬清潔之目標材料使用滾子傳送，藉由形成在 25 591714 玖、發明說明 支持擬清潔目標材料的電極之表面上的穿孔防止電聚之密 度均勻度的下降，以及由於絕緣的破壞而產生弧光。 此外，依據本發明的電漿清潔裝置轉換反應氣體成為 在大氣壓力下的電漿狀態，因而不必使用高價的高真空栗 5 等等，因而可降低裝置的製造成本。 本發明的優點在於金屬薄膜，如形成在目標材料上的 圖樣藉由並排地架設電極於同一平面上，且使電極的一側 配置成與目標材料平行而不受電場的影響而破壞。 · 此外，本發明可藉由均勻地供應氣體至目標材料的上 10 表面，產生均勻密度的電漿而改良清潔效率。 本發明已依據較佳實施例說明如上，熟悉此技藝人士 需瞭解到在不脫離由申請專利範圍所界定的本發明之範圍 及精神下可作細節及形式上的改變。 【圖式簡單說明】 15 第1圖為使用大氣壓電漿之一習知清潔裝置的概略構 造圖； _ 第2圖為第1圖中所示的下電極之詳細橫截面圖； 第3圖為依據本發明的一實施例之使用大氣壓電漿的 一清潔裝置的一橫截面圖； 2〇 第4圖為使用第3圖中所示之大氣壓電漿之清潔裝置 的底視圖； 第5圖為藉由第3及4圖中所示之第一及第二電極而 說明一電場的形成狀態之圖式； 第6圖為顯不依據本發明之另一實施例的使用大氣壓 26 591714 玖、發明說明 電漿之清潔裝置的構造之圖式； 第7圖為顯示依據本發明之另一實施例的使用大氣壓 電漿之清潔裝置的構造之圖式； 第8圖為由第6圖之電極部所產生的電場之狀態圖； 5 第9圖為由第7圖之電極部所產生的電場之狀態圖； 第10圖為依據本發明的另一實施例之氣體供應裝置 的構造圖。The reaction gas converted to the plasma state under the electric field 44b is sucked into the reaction gas suction port 50 of the reaction gas suction pipe 48 under a certain pressure and discharged to the outside. In particular, the reaction gas suction pipe 48 is constituted by a blower pipe, in which the folds are formed at the inside of one part and the other part, so that the flow through the reaction gas suction port 50 to the reaction gas suction pipe 48 The reaction gas smoothly moves to the end of the reaction gas suction pipe 48 by the rotational flow, and is discharged to the outside. The reaction gas suction port 20 formed on the surface of the reaction gas suction pipe 48 20 591714 may be larger than the diameter of the reaction gas supply port 38 so that the suction of the reaction gas can be performed smoothly. Referring to Figures 6 and 8, the structure and operation of a cleaning device using an atmospheric piezoelectric slurry according to another embodiment of the present invention will be described in detail below. 5 [Second embodiment] As shown in FIG. 6, a plurality of rotating rollers 1 for setting the target material s on its upper surface and conveying the target material S when the rotating roller 101 rotates in a predetermined direction 〇1 is prepared at a predetermined interval. At that time, turning the Roller 101 with a table support not shown. 10 On the other side facing the target material s of the rotating roller 101, electrode portions 103 composed of first and second electrodes 103a and 103b are arranged in parallel on a same plane at a predetermined distance D to Generates an arc-shaped electric field. As described above, the first and second electrodes 103a and 103b are erected side by side on the same plane, and the target material s is positioned below to generate an arc-shaped electric field of 15, as shown in FIG. 8, which can solve the metal In particular, when the target material s passes an electric field under the condition that the electrode is set up and down, the thin film has a problem that the pattern formed on the target material S is damaged. The first and second electrodes 103a and 103b are erected separately at a predetermined distance D2, an insulating element 105 is provided on the lower side of each electrode, and an insulating cover 20 107 is provided on the upper side and the side, respectively. Here, if the pitch is too wide, the plasma generation condition is not satisfied. If the predetermined pitch D2 is too narrow, the plasma is densely concentrated on the pitch itself when it is generated, so that the first electrodes 103a, 103b and The insulating cover 107 is destroyed together. Therefore, it is preferable that the 'preliminary pitch D2 is 10 mm to 15 mm. 21 591714 发明. Description of the invention At the same time, a power supply 109 is connected to the first electrodes 103 and 103 to supply a predetermined voltage. The voltage supplied from the power supply 109 is preferably 5 kV to 10 kV (P-P) AC voltage having a frequency of 100 Hz to 1 kHz. 5 At this time, the area ratio of the first and second electrodes 103a and 103b is i: 1. This maintains the current balance. In addition, resistors 113a and 113b for limiting the current are provided on the power supply connection wires to connect the first and second electrodes 103a and 103b and the power supply 109. The resistors 113a and 113b are used to prevent the target material s and the first and second electrodes 103a and 103b including the 10 insulating element 105 from increasing between the target material s and the electrode portion 103 when several electrodes and ions are not cleaned. The distance Di between the target material s and the electrode portion 103 is damaged due to an increase in current. The distance Di between the target material s and the electrode portion 103 is preferably 15 2.0 mm_5 mm. The insulating element 105 and the insulating cover 107 are made of an insulating material such as glass, quartz, or ceramic to protect the electrode portion 103 from arcing. Generate and reduce static electricity. [Third embodiment] 2 In the following, the same reference numerals are used to represent the same elements in Figs. 8 and 8 'to omit detailed descriptions thereof. As shown in Fig. 7, the electrode of the electrode portion 103 is composed of the first, second, and third electrodes 103a, 103b, and 103e. The area ratios of the first, second, and third electrodes 103a, 103b, and 103c are 22 591714 发明, the invention description is 1: 2: 1, and the same voltage is applied to the first and third electrodes 1 〇3a, and 103c ', and a voltage different from the above voltage is applied to the second electrode i03b, 〇 In addition, the resistor 117 is connected between the second electrode 103b and the power supply 109 One of the wires on the power supply. Here, the value of the resistance is preferably between 50kD and 150kD. The area ratios of the first, second, and third electrodes 103a, 103b, and 103c are 1: 2: 1, and the same voltage is applied to the first and third electrodes 103 and 103, and · l 〇3c ', and a different voltage is applied to the second electrode 103b, so that it can reach 10% of the effect achieved by the two pairs of electrodes formed by using three electrodes in the first figure. The advantage of this configuration is that it takes less space to increase the application of limited space. The reason why the resistance 117 is smaller than the resistances llla and llb in FIG. 6 is that the 15 electric field E is generated in two directions toward the first and second electrodes i03a and i03c, as shown in FIG. 8, and the current The amount is quite small compared to Figure 6. · The voltage D1 supplied by the power supply 109 between the target material s and the electrode 103 ', and the distance between the first and second and third electrodes 103, 103b, and 103c'. A is the same as that shown in FIG. Therefore 20, its description is omitted. The insulating element 105 and the insulating cover 107 are the same as those shown in FIG. [Fourth embodiment] Referring to Figs. 6, 7, and 10, the following will describe the generation of one of the plasma gases for supply 23 591714. The invention description should be structured. As shown in Fig. Ο, provision is made to supply a gas between the electrode portion 103 (103 ') and the target material S. The gas supply device 300 has a predetermined gas buffer structure to supply gas between the electrode portion 103 (103 ') and the target material S at a uniform pressure. In particular, the gas supply device 300 includes a body 302 having a gas supply port 302a to which gas is supplied from a gas supply source (not shown), and a gas buffer portion 305 configured to maintain the gas supply port 10 302a. A predetermined space of the supplied gas; and a nozzle portion 307 for spraying a uniform gas to the upper surface of the target material S due to the gas buffer portion 305. In Figures 6 and 7, the body 302 is made into a T-shape, and a connection block 309 having a V-shaped groove 309a inside is provided, and then the body 302 is inserted into the groove 309a to form a triangular space portion. A gas buffer portion 305 is formed. The nozzle portion 307 passes through a vertex on the lower side constituting the space portion. The baffles 401 having a plurality of gas passage holes 401a are provided on the gas buffer portion, and the gas holes 401a formed in each of the baffles 401 are alternately arranged so that the gas flow is delayed. 20 As shown in Figs. 1 and 2, the gas supply device 300 is preferably positioned below the electrode portion 103 (103 ') with respect to the direction in which the target material S is conveyed. The gas supplied from the gas supply source by the gas supply device 300 having the above-mentioned structure achieves a uniform pressure distribution due to the gas buffer portion 305, and is uniformly sprayed on the upper surface of the target material S so as to be generated in the mesh 24. 591714 (1) Invention description The tightness of the upper surface of the target material s is uniform, and the cleaning efficiency is improved. The supply gas used is an inert gas, such as argon or hydrogen, or a mixture thereof, and the ratio of argon to hydrogen in the mixture is: 1-5: 1. In the gas supply device as described above, in order to remove the ozone generated by adding oxygen to the inert gas 5 to remove a large amount of organic substances (〇2) (03), an exhaust gas suction can be set in the direction of the target material to be transported. The exit is at the end of the electrode portion 103 (103,). The cleaning devices in the first to fourth embodiments described above are used to remove a variety of organic thin films, high polymer thin films, metals, chromium compounds, and silicon nitride 10 thin films (SlsN4) formed on fl, and are used for LCDs of flat panel displays (FpD). Glass substrate, or organic electronic lamp (EL), or natural oxide film formed on the surface of ΓΓΟ (tin indium oxide) film, or make the surface hydrophilic. In particular, if the metal film or high polymer film is cleaned before applying the photosensitizer, the photosensitizer can be evenly coated on the film, so that the photosensitivity is increased. Organic matter can be applied before or after the film is applied or deposited, and The cleaning effect after removal can be expected. · The present invention not only shortens the cleaning time because it does not restrict the size and shape of the target material to be cleaned, but also improves the consistency of cleaning due to unclassified cleaning. 20 The invention not only improves the cooling effect of the electrode, but also forms a high-density electric violet by forming grooves and protrusions on the electrodes and embossed surface treatment on the grooves and protrusions. The low-frequency radio waves limit the generation of heat on the electrodes. In addition, the target material to be cleaned is conveyed by a roller, and the uniformity of the density of the polymer is prevented from being reduced by perforations formed on the surface of the electrode supporting the target material to be cleaned by 25 591714 玖. Generate arc light. In addition, the plasma cleaning device according to the present invention converts the reaction gas into a plasma state under atmospheric pressure, so that it is not necessary to use a high-priced high-vacuum pump 5 or the like, thereby reducing the manufacturing cost of the device. An advantage of the present invention is that a metal thin film, such as a pattern formed on a target material, is arranged on the same plane side by side, and one side of the electrode is arranged parallel to the target material without being damaged by the influence of an electric field. In addition, the present invention can improve the cleaning efficiency by uniformly supplying gas to the upper surface of the target material to generate a uniform density plasma. The present invention has been described above based on the preferred embodiment. Those skilled in the art need to understand that details and forms can be changed without departing from the scope and spirit of the present invention as defined by the scope of the patent application. [Brief description of the drawings] 15 Figure 1 is a schematic structural diagram of a conventional cleaning device using an atmospheric piezoelectric slurry; _ Figure 2 is a detailed cross-sectional view of the lower electrode shown in Figure 1; Figure 3 is A cross-sectional view of a cleaning device using an atmospheric piezoelectric slurry according to an embodiment of the present invention; FIG. 4 is a bottom view of the cleaning device using the atmospheric piezoelectric slurry shown in FIG. 3; FIG. 5 is The first and second electrodes shown in Figs. 3 and 4 are used to illustrate the formation state of an electric field. Fig. 6 is a view showing the use of atmospheric pressure 26 591714 according to another embodiment of the present invention. A diagram illustrating a structure of a plasma cleaning device; FIG. 7 is a diagram illustrating a structure of a cleaning device using an atmospheric piezoelectric plasma according to another embodiment of the present invention; FIG. 8 is an electrode portion formed by FIG. 6 State diagram of the generated electric field; 5 FIG. 9 is a state diagram of the electric field generated by the electrode portion of FIG. 7; and FIG. 10 is a structural diagram of a gas supply device according to another embodiment of the present invention.
【圖式之主要元件代表符號表】[Representation of the main components of the diagram]
10 錢氣體供應口 42a 第一絕緣玻璃 12 錢氣體喷射口 42b 第二絕緣玻璃 14 清潔目標材料供應口 44a 第一電極 18 下電極 44b 第二電極 19 銷 46 固定體 20 絕緣材料 48 反應氣體吸出管 22 上電極 50 反應氣體吸出口 24 絕緣材料 52 第一支持部 26 電力供應器 54 第二支持部 30 反應氣體供應部 56 桌 32 電極部 58 滚子 34 反應氣體吸出部 60 擬清潔之目標材料 36 反應氣體供應管 62 電力供應器 38 反應氣體口 101 滾子 40a 第一冷卻風扇 103 電極部 40b 第二冷卻風扇 1035 電極部 27 591714 玖、 發明說明 103a 第一電極 117 電阻 103a， 第一電極 300 氣體供應裝置 103b 第二電極 302 本體 103b5 第二電極 302a 氣體供應口 103c， 第三電極 305 氣體緩衝部 105 絕緣元件 307 喷嘴部 107 絕緣蓋 309 連接塊 109 電力供應器 309a V字形凹槽 111a 電阻 401 障板 111b 電阻 401a 113a 電阻 S 目標材料 113b 電阻10 Money gas supply port 42a First insulating glass 12 Money gas injection port 42b Second insulation glass 14 Cleaning target material supply port 44a First electrode 18 Lower electrode 44b Second electrode 19 Pin 46 Fixing body 20 Insulating material 48 Reactive gas suction pipe 22 Upper electrode 50 Reactive gas suction port 24 Insulating material 52 First support section 26 Power supply 54 Second support section 30 Reaction gas supply section 56 Table 32 Electrode section 58 Roller 34 Reaction gas suction section 60 Target material to be cleaned 36 Reaction gas supply pipe 62 power supply 38 reaction gas port 101 roller 40a first cooling fan 103 electrode portion 40b second cooling fan 1035 electrode portion 27 591714 玖, description of the invention 103a first electrode 117 resistor 103a, first electrode 300 gas Supply device 103b Second electrode 302 Body 103b5 Second electrode 302a Gas supply port 103c, Third electrode 305 Gas buffer section 105 Insulation element 307 Nozzle section 107 Insulation cover 309 Connection block 109 Power supply 309a V-shaped groove 111a Resistance 401 barrier Board 111b Resistor 401a 113a Resistor S Target 113b resistor
2828
Claims (1)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2002-0009068A KR100466016B1 (en) | 2002-02-20 | 2002-02-20 | Cleaning apparatus using the atmospheric pressure plasma |
| KR10-2003-0008312A KR100483063B1 (en) | 2002-02-20 | 2003-02-10 | Cleaning apparatus using the atmospheric pressure plasma |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200303582A TW200303582A (en) | 2003-09-01 |
| TW591714B true TW591714B (en) | 2004-06-11 |
Family
ID=27759801
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092103453A TW591714B (en) | 2002-02-20 | 2003-02-19 | Cleaning apparatus using atmospheric pressure plasma |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2005517530A (en) |
| AU (1) | AU2003208625A1 (en) |
| TW (1) | TW591714B (en) |
| WO (1) | WO2003070390A2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011162431A1 (en) * | 2010-06-24 | 2011-12-29 | 현대하이스코 주식회사 | Separator plate for a fuel cell and a production method therefor |
| RU2649695C1 (en) * | 2017-06-21 | 2018-04-04 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Method of glass ceramic substrates cleaning in the low pressure high-frequency plasma jet |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3854792D1 (en) * | 1987-02-24 | 1996-02-01 | Ibm | Plasma reactor |
| US5286297A (en) * | 1992-06-24 | 1994-02-15 | Texas Instruments Incorporated | Multi-electrode plasma processing apparatus |
| US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
| JP2845773B2 (en) * | 1995-04-27 | 1999-01-13 | 山形日本電気株式会社 | Atmospheric pressure CVD equipment |
| US6042686A (en) * | 1995-06-30 | 2000-03-28 | Lam Research Corporation | Power segmented electrode |
| US20020129902A1 (en) * | 1999-05-14 | 2002-09-19 | Babayan Steven E. | Low-temperature compatible wide-pressure-range plasma flow device |
| WO2001044790A1 (en) * | 1999-12-15 | 2001-06-21 | Stevens Institute Of Technology | Segmented electrode capillary discharge, non-thermal plasma apparatus and process for promoting chemical reactions |
-
2003
- 2003-02-19 TW TW092103453A patent/TW591714B/en not_active IP Right Cessation
- 2003-02-20 AU AU2003208625A patent/AU2003208625A1/en not_active Abandoned
- 2003-02-20 JP JP2003569341A patent/JP2005517530A/en active Pending
- 2003-02-20 WO PCT/KR2003/000343 patent/WO2003070390A2/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003070390A2 (en) | 2003-08-28 |
| AU2003208625A1 (en) | 2003-09-09 |
| JP2005517530A (en) | 2005-06-16 |
| AU2003208625A8 (en) | 2003-09-09 |
| WO2003070390A3 (en) | 2003-11-27 |
| TW200303582A (en) | 2003-09-01 |
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