JP2020004780A - プラズマ処理装置およびプラズマ処理方法 - Google Patents
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Abstract
Description
さらに、近年の素子集積度向上に伴い、微細加工の精度向上が要求されていると共に、半導体ウエハの面内方向についてエッチング処理の進行方向の速度(エッチングレート)をより均一にして当該ウエハの処理後に得られる加工結果としての膜構造の寸法のバラつきを低減してすることが求められている。
101…真空容器、
102…誘電体窓、
103…処理室、
104…導波管、
105…マグネトロン電源、
106…ソレノイドコイル、
107…試料載置用電極、
108…ウエハ、
109…中心側電極、
110…外周側電極、
111…クロック発生器、
112…第1の高周波バイアス電源、
113…第2の高周波バイアス電源、
114…第1の自動整合器、
115…第2の自動整合器、
116…第1の波形検出器、
117…第2の波形検出器、
118…電極間回路、
119…制御部、
121…第1の高周波バイス供給回路、
122…第2の高周波バイアス供給回路、
123,124…ポジション、
220…位相差検出部、
221…ループ選択部、
222…Vpp検出部、
223…Vpp保存部、
224…Vpp比較部、
225…コイル調整部。
Claims (8)
- 真空容器内部の処理室内に配置された飼料台の上面上方に載せられたウエハを当該処理室内に形成したプラズマを用いて処理するプラズマ処理装置であって、
前記試料台に配置され前記上面を構成する誘電体製の膜内部であって中央部及びその外周側の領域の下方に配置された複数の電極と、これら複数の電極各々に高周波電力を供給する複数の高周波電源と前記複数の電極及び高周波電源の各々の間を電気的に接続する複数の給電用の経路各々に配置された複数の整合器と、前記給電用の経路各々の前記整合器と前記電極との間の箇所同士をコイルを介して電気的に接続する接続経路と、各々の前記給電用の経路上に配置され当該給電用経路を流れる前記高周波電力の電圧の大きさを検知する検知器とを備え
前記ウエハの処理中に前記検知器の検知結果を用いて検出された前記給電用の経路を流れる高周波電力の位相差の大きさに応じて前記コイルのインダクタンスを前記高周波電力の電圧が極大または極小となるように調節するプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置であって、
前記コイルのインダクタンスの調節によって前記複数の電極と前記複数の給電経路と前記接続経路とが共振回路を構成するプラズマ処理装置。 - 請求項1または2に記載のプラズマ処理装置であって、
前記位相差が−90度乃至90度の範囲内である場合は前記高周波電力の電圧が極小に、前記位相差が90度乃至180度または−90度乃至−180度の範囲内である場合は前記高周波電力の電圧が極大となるように、前記コイルのインダクタンス値を調節するプラズマ処理装置。 - 請求項1乃至3のいずれかに記載のプラズマ処理装置であって、
前記複数の電極が前記試料台の前記上面を構成する誘電体製の膜の内部に配置されたものであって、前記中央部とその外周部をリング状に囲む領域の各々に配置された複数の膜状の電極であるプラズマ処理装置。 - 内部に処理室を有する真空容器と、この処理室に配置されその上面上方に処理対象のウエハが載せられる試料台と、前記試料台の前記上面の中央部及びその外周側の領域の下方の当該試料台の内部に配置された複数の電極と、これら複数の電極各々に高周波電力を供給する複数の高周波電源と、前記複数の電極及び高周波電源の各々の間を電気的に接続する複数の給電用の経路各々に配置された複数の整合器と、前記給電用の経路各々の前記整合器と前記電極との間の箇所同士をコイルを介して電気的に接続する接続経路と、各々の前記給電用の経路上に配置され当該給電用経路を流れる前記高周波電力の電圧または電流の大きさを検知する検知器とを備えたプラズマ処理装置の前記試料台上面上に前記ウエハを載せて当該処理室内に形成したプラズマを用いて処理するプラズマ処理方法であって、
前記ウエハの処理中に前記検知器の検知結果を用いて検出された前記給電用の経路を流れる高周波電力の位相差の大きさに応じて前記コイルのインダクタンスを前記高周波電力の電圧が極大または極小となるように調節するプラズマ処理方法。 - 請求項5に記載のプラズマ処理装置であって、
前記コイルのインダクタンスの調節によって前記複数の電極と前記複数の給電経路と前記接続経路とが共振回路を構成するプラズマ処理方法。 - 請求項5または6の記載のプラズマ処理方法であって、
前記位相差が−90度乃至90度の範囲内である場合は前記コイルのインダクタンスを調節して極小値を検出し、前記位相差が90度乃至180度または−90度乃至−180度の範囲内である場合は前記コイルのインダクタンスを調節して極大値を検出して調節するプラズマ処理方法。 - 請求項5乃至7のいずれかに記載のプラズマ処理方法であって、
前記複数の電極が前記試料台の前記上面を構成する誘電体製の膜の内部に配置されたものであって、前記中央部とその外周側をリング状に囲む領域の各々に配置された複数の膜状の電極であるプラズマ処理方法。
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JP2018120390A JP7101546B2 (ja) | 2018-06-26 | 2018-06-26 | プラズマ処理装置およびプラズマ処理方法 |
KR1020190008004A KR102191228B1 (ko) | 2018-06-26 | 2019-01-22 | 플라스마 처리 장치 및 플라스마 처리 방법 |
CN201910116069.3A CN110648889B (zh) | 2018-06-26 | 2019-02-14 | 等离子处理装置以及等离子处理方法 |
TW108106223A TWI712342B (zh) | 2018-06-26 | 2019-02-25 | 電漿處理裝置及電漿處理方法 |
US16/287,814 US11062884B2 (en) | 2018-06-26 | 2019-02-27 | Plasma processing apparatus and plasma processing method |
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KR20220149749A (ko) * | 2020-03-06 | 2022-11-08 | 램 리써치 코포레이션 | 튜닝 가능 에지 시스 (tunable edge sheath) 시스템을 위한 펄싱된 rf 신호의 전압 설정점 튜닝 |
US12057339B2 (en) * | 2020-10-23 | 2024-08-06 | Applied Materials, Inc. | Bipolar electrostatic chuck to limit DC discharge |
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