JP4024990B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4024990B2
JP4024990B2 JP2000130705A JP2000130705A JP4024990B2 JP 4024990 B2 JP4024990 B2 JP 4024990B2 JP 2000130705 A JP2000130705 A JP 2000130705A JP 2000130705 A JP2000130705 A JP 2000130705A JP 4024990 B2 JP4024990 B2 JP 4024990B2
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JP
Japan
Prior art keywords
resistance
resistance element
semiconductor device
insulating film
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000130705A
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English (en)
Japanese (ja)
Other versions
JP2001313367A (ja
JP2001313367A5 (enExample
Inventor
俊一 山内
芳人 中沢
雄司 谷ッ田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2000130705A priority Critical patent/JP4024990B2/ja
Priority to US09/842,015 priority patent/US6492689B2/en
Priority to KR1020010023248A priority patent/KR100626786B1/ko
Publication of JP2001313367A publication Critical patent/JP2001313367A/ja
Publication of JP2001313367A5 publication Critical patent/JP2001313367A5/ja
Application granted granted Critical
Publication of JP4024990B2 publication Critical patent/JP4024990B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only

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  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
JP2000130705A 2000-04-28 2000-04-28 半導体装置 Expired - Fee Related JP4024990B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000130705A JP4024990B2 (ja) 2000-04-28 2000-04-28 半導体装置
US09/842,015 US6492689B2 (en) 2000-04-28 2001-04-26 Semiconductor device switching regulator used as a DC regulated power supply
KR1020010023248A KR100626786B1 (ko) 2000-04-28 2001-04-28 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000130705A JP4024990B2 (ja) 2000-04-28 2000-04-28 半導体装置

Publications (3)

Publication Number Publication Date
JP2001313367A JP2001313367A (ja) 2001-11-09
JP2001313367A5 JP2001313367A5 (enExample) 2005-02-10
JP4024990B2 true JP4024990B2 (ja) 2007-12-19

Family

ID=18639745

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000130705A Expired - Fee Related JP4024990B2 (ja) 2000-04-28 2000-04-28 半導体装置

Country Status (3)

Country Link
US (1) US6492689B2 (enExample)
JP (1) JP4024990B2 (enExample)
KR (1) KR100626786B1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100535062B1 (ko) * 2001-06-04 2005-12-07 마츠시타 덴끼 산교 가부시키가이샤 고내압 반도체장치
US6552597B1 (en) * 2001-11-02 2003-04-22 Power Integrations, Inc. Integrated circuit with closely coupled high voltage output and offline transistor pair
US20040235258A1 (en) * 2003-05-19 2004-11-25 Wu David Donggang Method of forming resistive structures
JP2005268249A (ja) * 2004-03-16 2005-09-29 Philtech Inc 半導体装置およびその製造方法
TW200634375A (en) * 2005-03-28 2006-10-01 Elan Microelectronics Corp Power line structure for liquid crystal display panel
JP4762663B2 (ja) * 2005-10-14 2011-08-31 三菱電機株式会社 半導体装置
JP5343306B2 (ja) 2006-03-24 2013-11-13 富士電機株式会社 スイッチング電源用ｉｃおよびスイッチング電源
JP4895104B2 (ja) * 2006-07-06 2012-03-14 ルネサスエレクトロニクス株式会社 半導体装置
KR100734328B1 (ko) * 2006-07-24 2007-07-02 삼성전자주식회사 파워 게이팅 트랜지스터 스위치의 레이 아웃 구조 및 레이아웃 방법
JP5564749B2 (ja) 2006-11-20 2014-08-06 富士電機株式会社 半導体装置、半導体集積回路、スイッチング電源用制御ｉｃおよびスイッチング電源装置
JP4974653B2 (ja) * 2006-11-21 2012-07-11 ローム株式会社 昇圧型スイッチングレギュレータの制御回路、それを用いた昇圧型スイッチングレギュレータ、およびそれらを用いた電子機器
US8897039B2 (en) * 2007-06-12 2014-11-25 Bcd Semiconductor Manufacturing Limited Method and system for pulse frequency modulated switching mode power supplies
KR100887884B1 (ko) * 2007-10-01 2009-03-06 주식회사 동부하이텍 반도체 소자
WO2009078274A1 (ja) * 2007-12-14 2009-06-25 Fuji Electric Device Technology Co., Ltd. 集積回路および半導体装置
TWM351555U (en) * 2008-05-06 2009-02-21 Bcd Semiconductor Mfg Ltd Method and apparatus for reducing standby power of switching mode power supplies
US8125799B2 (en) * 2009-10-23 2012-02-28 Bcd Semiconductor Manufacturing Limited Control circuits and methods for switching mode power supplies
JP2010239832A (ja) * 2009-03-31 2010-10-21 Panasonic Corp 電流制限回路
US8045348B2 (en) * 2009-04-09 2011-10-25 Bcd Semiconductor Manufacturing Limited Switching mode power supply controller with high voltage startup circuits
US8242013B2 (en) * 2010-03-30 2012-08-14 Alpha & Omega Semiconductor Inc. Virtually substrate-less composite power semiconductor device and method
JP5575610B2 (ja) * 2010-11-09 2014-08-20 本田技研工業株式会社 電源装置
US8482029B2 (en) * 2011-05-27 2013-07-09 Infineon Technologies Austria Ag Semiconductor device and integrated circuit including the semiconductor device
CN102354703B (zh) * 2011-10-19 2013-01-23 扬州杰利半导体有限公司 一种平面结构型超高压二极管芯片
JP5637154B2 (ja) * 2012-02-22 2014-12-10 トヨタ自動車株式会社 半導体装置
JP6079456B2 (ja) 2013-06-07 2017-02-15 三菱電機株式会社 半導体装置の検査方法
CN103746002B (zh) * 2013-12-17 2016-04-20 西安理工大学 一种台阶形沟槽-场限环复合终端结构
WO2015132926A1 (ja) * 2014-03-06 2015-09-11 三菱電機株式会社 半導体装置、及び、その試験方法
DE102016120301A1 (de) * 2016-10-25 2018-04-26 Infineon Technologies Ag Leistungshalbleitervorrichtungs-Abschlussstruktur
JP6853373B2 (ja) * 2017-09-28 2021-03-31 ローム株式会社 電源ｉｃ
DE102021117826A1 (de) 2021-07-09 2023-01-12 Infineon Technologies Ag Leistungshalbleitervorrichtung Verfahren zur Herstellung einer Leistungshalbleitervorrichtung
CN117116915B (zh) * 2023-10-25 2024-01-19 合肥晶合集成电路股份有限公司 半导体结构及其制备方法、方块电阻的测量方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2167229B (en) * 1984-11-21 1988-07-20 Philips Electronic Associated Semiconductor devices
JPH0612654B2 (ja) * 1985-04-29 1994-02-16 ソニー株式会社 陰極線管の内蔵抵抗器
GB9207860D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor component
JP3207615B2 (ja) * 1992-06-24 2001-09-10 株式会社東芝 半導体装置
JP2850694B2 (ja) * 1993-03-10 1999-01-27 株式会社日立製作所 高耐圧プレーナ型半導体装置
JPH07297368A (ja) * 1994-04-25 1995-11-10 Rohm Co Ltd 抵抗体および半導体素子
JP3331846B2 (ja) 1995-12-28 2002-10-07 株式会社日立製作所 半導体装置
JPH10163429A (ja) * 1996-11-29 1998-06-19 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
KR20010098965A (ko) 2001-11-08
KR100626786B1 (ko) 2006-09-22
US20010035554A1 (en) 2001-11-01
JP2001313367A (ja) 2001-11-09
US6492689B2 (en) 2002-12-10

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