KR100626786B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR100626786B1
KR100626786B1 KR1020010023248A KR20010023248A KR100626786B1 KR 100626786 B1 KR100626786 B1 KR 100626786B1 KR 1020010023248 A KR1020010023248 A KR 1020010023248A KR 20010023248 A KR20010023248 A KR 20010023248A KR 100626786 B1 KR100626786 B1 KR 100626786B1
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South Korea
Prior art keywords
terminal
resistance
starting
resistance element
insulating film
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English (en)
Korean (ko)
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KR20010098965A (ko
Inventor
야마우찌순이찌
나까자와요시또
야쯔다유우지
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
히타치 토부 세미콘덕터 가부시키가이샤
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Publication of KR20010098965A publication Critical patent/KR20010098965A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/209—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only

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  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
KR1020010023248A 2000-04-28 2001-04-28 반도체 장치 및 그 제조 방법 Expired - Fee Related KR100626786B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000-130705 2000-04-28
JP2000130705A JP4024990B2 (ja) 2000-04-28 2000-04-28 半導体装置

Publications (2)

Publication Number Publication Date
KR20010098965A KR20010098965A (ko) 2001-11-08
KR100626786B1 true KR100626786B1 (ko) 2006-09-22

Family

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KR1020010023248A Expired - Fee Related KR100626786B1 (ko) 2000-04-28 2001-04-28 반도체 장치 및 그 제조 방법

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US (1) US6492689B2 (enExample)
JP (1) JP4024990B2 (enExample)
KR (1) KR100626786B1 (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100535062B1 (ko) * 2001-06-04 2005-12-07 마츠시타 덴끼 산교 가부시키가이샤 고내압 반도체장치
US6552597B1 (en) * 2001-11-02 2003-04-22 Power Integrations, Inc. Integrated circuit with closely coupled high voltage output and offline transistor pair
US20040235258A1 (en) * 2003-05-19 2004-11-25 Wu David Donggang Method of forming resistive structures
JP2005268249A (ja) * 2004-03-16 2005-09-29 Philtech Inc 半導体装置およびその製造方法
TW200634375A (en) * 2005-03-28 2006-10-01 Elan Microelectronics Corp Power line structure for liquid crystal display panel
JP4762663B2 (ja) * 2005-10-14 2011-08-31 三菱電機株式会社 半導体装置
JP5343306B2 (ja) 2006-03-24 2013-11-13 富士電機株式会社 スイッチング電源用ｉｃおよびスイッチング電源
JP4895104B2 (ja) * 2006-07-06 2012-03-14 ルネサスエレクトロニクス株式会社 半導体装置
KR100734328B1 (ko) * 2006-07-24 2007-07-02 삼성전자주식회사 파워 게이팅 트랜지스터 스위치의 레이 아웃 구조 및 레이아웃 방법
JP5564749B2 (ja) 2006-11-20 2014-08-06 富士電機株式会社 半導体装置、半導体集積回路、スイッチング電源用制御ｉｃおよびスイッチング電源装置
JP4974653B2 (ja) * 2006-11-21 2012-07-11 ローム株式会社 昇圧型スイッチングレギュレータの制御回路、それを用いた昇圧型スイッチングレギュレータ、およびそれらを用いた電子機器
US8897039B2 (en) * 2007-06-12 2014-11-25 Bcd Semiconductor Manufacturing Limited Method and system for pulse frequency modulated switching mode power supplies
KR100887884B1 (ko) * 2007-10-01 2009-03-06 주식회사 동부하이텍 반도체 소자
WO2009078274A1 (ja) * 2007-12-14 2009-06-25 Fuji Electric Device Technology Co., Ltd. 集積回路および半導体装置
TWM351555U (en) * 2008-05-06 2009-02-21 Bcd Semiconductor Mfg Ltd Method and apparatus for reducing standby power of switching mode power supplies
US8125799B2 (en) * 2009-10-23 2012-02-28 Bcd Semiconductor Manufacturing Limited Control circuits and methods for switching mode power supplies
JP2010239832A (ja) * 2009-03-31 2010-10-21 Panasonic Corp 電流制限回路
US8045348B2 (en) * 2009-04-09 2011-10-25 Bcd Semiconductor Manufacturing Limited Switching mode power supply controller with high voltage startup circuits
US8242013B2 (en) * 2010-03-30 2012-08-14 Alpha & Omega Semiconductor Inc. Virtually substrate-less composite power semiconductor device and method
JP5575610B2 (ja) * 2010-11-09 2014-08-20 本田技研工業株式会社 電源装置
US8482029B2 (en) * 2011-05-27 2013-07-09 Infineon Technologies Austria Ag Semiconductor device and integrated circuit including the semiconductor device
CN102354703B (zh) * 2011-10-19 2013-01-23 扬州杰利半导体有限公司 一种平面结构型超高压二极管芯片
JP5637154B2 (ja) * 2012-02-22 2014-12-10 トヨタ自動車株式会社 半導体装置
JP6079456B2 (ja) 2013-06-07 2017-02-15 三菱電機株式会社 半導体装置の検査方法
CN103746002B (zh) * 2013-12-17 2016-04-20 西安理工大学 一种台阶形沟槽-场限环复合终端结构
WO2015132926A1 (ja) * 2014-03-06 2015-09-11 三菱電機株式会社 半導体装置、及び、その試験方法
DE102016120301A1 (de) * 2016-10-25 2018-04-26 Infineon Technologies Ag Leistungshalbleitervorrichtungs-Abschlussstruktur
JP6853373B2 (ja) * 2017-09-28 2021-03-31 ローム株式会社 電源ｉｃ
DE102021117826A1 (de) 2021-07-09 2023-01-12 Infineon Technologies Ag Leistungshalbleitervorrichtung Verfahren zur Herstellung einer Leistungshalbleitervorrichtung
CN117116915B (zh) * 2023-10-25 2024-01-19 合肥晶合集成电路股份有限公司 半导体结构及其制备方法、方块电阻的测量方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61250935A (ja) * 1985-04-29 1986-11-08 Sony Corp 陰極線管の内蔵抵抗器
JPH06268198A (ja) * 1993-03-10 1994-09-22 Hitachi Ltd 高耐圧プレーナ型半導体装置
JPH07297368A (ja) * 1994-04-25 1995-11-10 Rohm Co Ltd 抵抗体および半導体素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2167229B (en) * 1984-11-21 1988-07-20 Philips Electronic Associated Semiconductor devices
GB9207860D0 (en) * 1992-04-09 1992-05-27 Philips Electronics Uk Ltd A semiconductor component
JP3207615B2 (ja) * 1992-06-24 2001-09-10 株式会社東芝 半導体装置
JP3331846B2 (ja) 1995-12-28 2002-10-07 株式会社日立製作所 半導体装置
JPH10163429A (ja) * 1996-11-29 1998-06-19 Mitsubishi Electric Corp 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61250935A (ja) * 1985-04-29 1986-11-08 Sony Corp 陰極線管の内蔵抵抗器
JPH06268198A (ja) * 1993-03-10 1994-09-22 Hitachi Ltd 高耐圧プレーナ型半導体装置
JPH07297368A (ja) * 1994-04-25 1995-11-10 Rohm Co Ltd 抵抗体および半導体素子

Also Published As

Publication number Publication date
KR20010098965A (ko) 2001-11-08
JP4024990B2 (ja) 2007-12-19
US20010035554A1 (en) 2001-11-01
JP2001313367A (ja) 2001-11-09
US6492689B2 (en) 2002-12-10

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