JP4010425B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

Info

Publication number
JP4010425B2
JP4010425B2 JP06678997A JP6678997A JP4010425B2 JP 4010425 B2 JP4010425 B2 JP 4010425B2 JP 06678997 A JP06678997 A JP 06678997A JP 6678997 A JP6678997 A JP 6678997A JP 4010425 B2 JP4010425 B2 JP 4010425B2
Authority
JP
Japan
Prior art keywords
wiring
insulating film
spacer
insulating
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP06678997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10261646A (ja
JPH10261646A5 (enExample
Inventor
賢司 福田
浩一 橋本
浩美 林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP06678997A priority Critical patent/JP4010425B2/ja
Publication of JPH10261646A publication Critical patent/JPH10261646A/ja
Publication of JPH10261646A5 publication Critical patent/JPH10261646A5/ja
Application granted granted Critical
Publication of JP4010425B2 publication Critical patent/JP4010425B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP06678997A 1997-03-19 1997-03-19 半導体装置及びその製造方法 Expired - Lifetime JP4010425B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP06678997A JP4010425B2 (ja) 1997-03-19 1997-03-19 半導体装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP06678997A JP4010425B2 (ja) 1997-03-19 1997-03-19 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JPH10261646A JPH10261646A (ja) 1998-09-29
JPH10261646A5 JPH10261646A5 (enExample) 2004-12-02
JP4010425B2 true JP4010425B2 (ja) 2007-11-21

Family

ID=13325986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP06678997A Expired - Lifetime JP4010425B2 (ja) 1997-03-19 1997-03-19 半導体装置及びその製造方法

Country Status (1)

Country Link
JP (1) JP4010425B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001044294A (ja) * 1999-08-02 2001-02-16 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP2001332633A (ja) * 2000-05-24 2001-11-30 Sony Corp 半導体メモリ
JP4530552B2 (ja) * 2001-01-29 2010-08-25 富士通セミコンダクター株式会社 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JPH10261646A (ja) 1998-09-29

Similar Documents

Publication Publication Date Title
US6388296B1 (en) CMOS self-aligned strapped interconnection
EP0562207B1 (en) Method of forming thin film pseudo-planar PFET devices and structures resulting therefrom
US5483104A (en) Self-aligning contact and interconnect structure
CN1142588C (zh) 提供双功函数掺杂的方法及保护绝缘帽盖
KR20000053397A (ko) 반도체 집적 회로 장치 및 그 제조 방법
JP3563530B2 (ja) 半導体集積回路装置
JPH11251457A (ja) 半導体デバイス，メモリ・セル，およびその形成方法
JPH04211134A (ja) 集積回路及びその製造方法
KR970003953A (ko) 고집적 dram 셀 및 그 제조방법
JPH10189483A (ja) 半導体装置の製造方法及び半導体装置
JP2689038B2 (ja) 半導体装置およびその製造方法
KR100247933B1 (ko) 버티드 콘택을 갖는 반도체 소자 및 그 제조방법
JPH10223770A (ja) 半導体装置及びその製造方法
US7176096B1 (en) Transistor gate and local interconnect
JP3324648B2 (ja) 半導体装置の製造方法
US6372641B1 (en) Method of forming self-aligned via structure
JP4010425B2 (ja) 半導体装置及びその製造方法
US6294449B1 (en) Self-aligned contact for closely spaced transistors
KR100573276B1 (ko) 에스램 소자 및 그 제조방법
US5290728A (en) Method for producing a semiconductor device
KR100589490B1 (ko) 반도체 소자의 제조 방법
US6297084B1 (en) Method for fabricating semiconductor memory
KR0144413B1 (ko) 반도체소자 및 그 제조방법
JP2000269461A (ja) 半導体記憶装置及びその製造方法
JP4331276B2 (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20031216

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20031216

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20050322

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070612

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070806

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070828

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070830

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100914

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100914

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100914

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110914

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110914

Year of fee payment: 4

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110914

Year of fee payment: 4

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120914

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120914

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130914

Year of fee payment: 6

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term