JP3967433B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP3967433B2
JP3967433B2 JP26469497A JP26469497A JP3967433B2 JP 3967433 B2 JP3967433 B2 JP 3967433B2 JP 26469497 A JP26469497 A JP 26469497A JP 26469497 A JP26469497 A JP 26469497A JP 3967433 B2 JP3967433 B2 JP 3967433B2
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JP
Japan
Prior art keywords
processing apparatus
plasma processing
plasma
coil
antenna
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP26469497A
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English (en)
Japanese (ja)
Other versions
JPH10233297A (ja
Inventor
キロン バルドワジ ジョッティ
ミカエル リー レスリー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Surface Technology Systems Ltd
Original Assignee
Surface Technology Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9620150.4A external-priority patent/GB9620150D0/en
Priority claimed from GBGB9621939.9A external-priority patent/GB9621939D0/en
Application filed by Surface Technology Systems Ltd filed Critical Surface Technology Systems Ltd
Publication of JPH10233297A publication Critical patent/JPH10233297A/ja
Application granted granted Critical
Publication of JP3967433B2 publication Critical patent/JP3967433B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Treatment Of Fiber Materials (AREA)
JP26469497A 1996-09-27 1997-09-29 プラズマ処理装置 Expired - Lifetime JP3967433B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB9620150.4A GB9620150D0 (en) 1996-09-27 1996-09-27 Plasma processing apparatus
GB96201504 1996-10-22
GBGB9621939.9A GB9621939D0 (en) 1996-10-22 1996-10-22 Plasma processing apparatus
GB96219399 1996-10-22

Publications (2)

Publication Number Publication Date
JPH10233297A JPH10233297A (ja) 1998-09-02
JP3967433B2 true JP3967433B2 (ja) 2007-08-29

Family

ID=26310113

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26469497A Expired - Lifetime JP3967433B2 (ja) 1996-09-27 1997-09-29 プラズマ処理装置

Country Status (6)

Country Link
US (1) US6259209B1 (fr)
EP (2) EP1324371B1 (fr)
JP (1) JP3967433B2 (fr)
KR (1) KR100505176B1 (fr)
AT (1) ATE396494T1 (fr)
DE (2) DE69736081T2 (fr)

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US6192829B1 (en) * 1999-05-05 2001-02-27 Applied Materials, Inc. Antenna coil assemblies for substrate processing chambers
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US7183716B2 (en) * 2003-02-04 2007-02-27 Veeco Instruments, Inc. Charged particle source and operation thereof
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KR100513163B1 (ko) * 2003-06-18 2005-09-08 삼성전자주식회사 Ｉｃｐ 안테나 및 이를 사용하는 플라즈마 발생장치
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
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JP4405973B2 (ja) * 2006-01-17 2010-01-27 キヤノンアネルバ株式会社 薄膜作製装置
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JP5400434B2 (ja) * 2009-03-11 2014-01-29 株式会社イー・エム・ディー プラズマ処理装置
JP4621287B2 (ja) * 2009-03-11 2011-01-26 株式会社イー・エム・ディー プラズマ処理装置
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JP5606821B2 (ja) * 2010-08-04 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
CN103155718B (zh) * 2010-09-06 2016-09-28 Emd株式会社 等离子处理装置
US20130220548A1 (en) * 2010-09-10 2013-08-29 Emd Corporation Plasma processing device
JP5745812B2 (ja) * 2010-10-27 2015-07-08 東京エレクトロン株式会社 プラズマ処理装置
KR101196309B1 (ko) * 2011-05-19 2012-11-06 한국과학기술원 플라즈마 발생 장치
KR101921222B1 (ko) * 2011-06-30 2018-11-23 삼성디스플레이 주식회사 플라즈마를 이용한 기판 처리장치 및 이를 이용한 유기 발광 표시장치의 제조 방법
KR101241049B1 (ko) 2011-08-01 2013-03-15 주식회사 플라즈마트 플라즈마 발생 장치 및 플라즈마 발생 방법
WO2013052713A1 (fr) * 2011-10-05 2013-04-11 Intevac, Inc. Source de plasma hybride inductif/capacitif et système comprenant une telle chambre
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US8901820B2 (en) * 2012-01-31 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Ribbon antenna for versatile operation and efficient RF power coupling
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KR101332337B1 (ko) 2012-06-29 2013-11-22 태원전기산업 (주) 초고주파 발광 램프 장치
KR20140087215A (ko) * 2012-12-28 2014-07-09 주식회사 윈텔 플라즈마 장치 및 기판 처리 장치
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Also Published As

Publication number Publication date
EP0838839B1 (fr) 2008-05-21
EP0838839A2 (fr) 1998-04-29
DE69736081T2 (de) 2007-01-11
DE69736081D1 (de) 2006-07-20
DE69738704D1 (de) 2008-07-03
KR100505176B1 (ko) 2005-10-10
ATE396494T1 (de) 2008-06-15
JPH10233297A (ja) 1998-09-02
US6259209B1 (en) 2001-07-10
EP1324371A1 (fr) 2003-07-02
EP1324371B1 (fr) 2006-06-07
EP0838839A3 (fr) 1998-05-13
KR19990026531A (ko) 1999-04-15

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