DE69736081D1 - Plasmabearbeitungsvorrichtung - Google Patents

Plasmabearbeitungsvorrichtung

Info

Publication number
DE69736081D1
DE69736081D1 DE69736081T DE69736081T DE69736081D1 DE 69736081 D1 DE69736081 D1 DE 69736081D1 DE 69736081 T DE69736081 T DE 69736081T DE 69736081 T DE69736081 T DE 69736081T DE 69736081 D1 DE69736081 D1 DE 69736081D1
Authority
DE
Germany
Prior art keywords
processing apparatus
plasma processing
dielectric window
dielectric
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69736081T
Other languages
English (en)
Other versions
DE69736081T2 (de
Inventor
Jyoti Kiron Bhardwaj
Leslie Michael Lea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Surface Technology Systems Ltd
Original Assignee
Surface Technology Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9620150.4A external-priority patent/GB9620150D0/en
Priority claimed from GBGB9621939.9A external-priority patent/GB9621939D0/en
Application filed by Surface Technology Systems Ltd filed Critical Surface Technology Systems Ltd
Publication of DE69736081D1 publication Critical patent/DE69736081D1/de
Application granted granted Critical
Publication of DE69736081T2 publication Critical patent/DE69736081T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211Antennas, e.g. particular shapes of coils
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Treatment Of Fiber Materials (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
DE69736081T 1996-09-27 1997-09-25 Plasmabearbeitungsvorrichtung Expired - Lifetime DE69736081T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GB9620150 1996-09-27
GBGB9620150.4A GB9620150D0 (en) 1996-09-27 1996-09-27 Plasma processing apparatus
GBGB9621939.9A GB9621939D0 (en) 1996-10-22 1996-10-22 Plasma processing apparatus
GB9621939 1996-10-22

Publications (2)

Publication Number Publication Date
DE69736081D1 true DE69736081D1 (de) 2006-07-20
DE69736081T2 DE69736081T2 (de) 2007-01-11

Family

ID=26310113

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69736081T Expired - Lifetime DE69736081T2 (de) 1996-09-27 1997-09-25 Plasmabearbeitungsvorrichtung
DE69738704T Expired - Lifetime DE69738704D1 (de) 1996-09-27 1997-09-25 Plasmabearbeitungsgerät

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69738704T Expired - Lifetime DE69738704D1 (de) 1996-09-27 1997-09-25 Plasmabearbeitungsgerät

Country Status (6)

Country Link
US (1) US6259209B1 (de)
EP (2) EP0838839B1 (de)
JP (1) JP3967433B2 (de)
KR (1) KR100505176B1 (de)
AT (1) ATE396494T1 (de)
DE (2) DE69736081T2 (de)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849471B2 (en) 2003-03-28 2005-02-01 Reflectivity, Inc. Barrier layers for microelectromechanical systems
US6969635B2 (en) 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US6534922B2 (en) * 1996-09-27 2003-03-18 Surface Technology Systems, Plc Plasma processing apparatus
US6158384A (en) * 1997-06-05 2000-12-12 Applied Materials, Inc. Plasma reactor with multiple small internal inductive antennas
US6273022B1 (en) * 1998-03-14 2001-08-14 Applied Materials, Inc. Distributed inductively-coupled plasma source
US6155199A (en) * 1998-03-31 2000-12-05 Lam Research Corporation Parallel-antenna transformer-coupled plasma generation system
TW469534B (en) * 1999-02-23 2001-12-21 Matsushita Electric Ind Co Ltd Plasma processing method and apparatus
US6229264B1 (en) 1999-03-31 2001-05-08 Lam Research Corporation Plasma processor with coil having variable rf coupling
US6192829B1 (en) * 1999-05-05 2001-02-27 Applied Materials, Inc. Antenna coil assemblies for substrate processing chambers
US6949202B1 (en) 1999-10-26 2005-09-27 Reflectivity, Inc Apparatus and method for flow of process gas in an ultra-clean environment
US6290864B1 (en) 1999-10-26 2001-09-18 Reflectivity, Inc. Fluoride gas etching of silicon with improved selectivity
US7041224B2 (en) 1999-10-26 2006-05-09 Reflectivity, Inc. Method for vapor phase etching of silicon
US6451161B1 (en) * 2000-04-10 2002-09-17 Nano-Architect Research Corporation Method and apparatus for generating high-density uniform plasma
US6685798B1 (en) * 2000-07-06 2004-02-03 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6694915B1 (en) * 2000-07-06 2004-02-24 Applied Materials, Inc Plasma reactor having a symmetrical parallel conductor coil antenna
US6402301B1 (en) 2000-10-27 2002-06-11 Lexmark International, Inc Ink jet printheads and methods therefor
WO2002056649A1 (fr) * 2000-12-27 2002-07-18 Japan Science And Technology Corporation Generateur plasma
US7189332B2 (en) 2001-09-17 2007-03-13 Texas Instruments Incorporated Apparatus and method for detecting an endpoint in a vapor phase etch
US6965468B2 (en) 2003-07-03 2005-11-15 Reflectivity, Inc Micromirror array having reduced gap between adjacent micromirrors of the micromirror array
TW201041455A (en) 2002-12-16 2010-11-16 Japan Science & Tech Agency Plasma generation device, plasma control method, and substrate manufacturing method
US7183716B2 (en) * 2003-02-04 2007-02-27 Veeco Instruments, Inc. Charged particle source and operation thereof
WO2004086467A1 (ja) 2003-03-26 2004-10-07 Kansai Technology Licensing Organization Co., Ltd. 極端紫外光源及び極端紫外光源用ターゲット
KR100513163B1 (ko) * 2003-06-18 2005-09-08 삼성전자주식회사 Icp 안테나 및 이를 사용하는 플라즈마 발생장치
US7645704B2 (en) 2003-09-17 2010-01-12 Texas Instruments Incorporated Methods and apparatus of etch process control in fabrications of microstructures
US7273533B2 (en) * 2003-11-19 2007-09-25 Tokyo Electron Limited Plasma processing system with locally-efficient inductive plasma coupling
KR100709354B1 (ko) * 2005-06-17 2007-04-20 삼성전자주식회사 다채널 플라즈마 가속장치
JP4405973B2 (ja) * 2006-01-17 2010-01-27 キヤノンアネルバ株式会社 薄膜作製装置
US8920600B2 (en) * 2006-08-22 2014-12-30 Mattson Technology, Inc. Inductive plasma source with high coupling efficiency
US8992725B2 (en) * 2006-08-28 2015-03-31 Mattson Technology, Inc. Plasma reactor with inductie excitation of plasma and efficient removal of heat from the excitation coil
JP4621287B2 (ja) * 2009-03-11 2011-01-26 株式会社イー・エム・ディー プラズマ処理装置
JP5400434B2 (ja) * 2009-03-11 2014-01-29 株式会社イー・エム・ディー プラズマ処理装置
US20110278260A1 (en) 2010-05-14 2011-11-17 Applied Materials, Inc. Inductive plasma source with metallic shower head using b-field concentrator
JP5606821B2 (ja) * 2010-08-04 2014-10-15 東京エレクトロン株式会社 プラズマ処理装置
CN103155718B (zh) * 2010-09-06 2016-09-28 Emd株式会社 等离子处理装置
TWI559819B (zh) * 2010-09-10 2016-11-21 Emd Corp Plasma processing device
JP5745812B2 (ja) * 2010-10-27 2015-07-08 東京エレクトロン株式会社 プラズマ処理装置
KR101196309B1 (ko) * 2011-05-19 2012-11-06 한국과학기술원 플라즈마 발생 장치
KR101921222B1 (ko) * 2011-06-30 2018-11-23 삼성디스플레이 주식회사 플라즈마를 이용한 기판 처리장치 및 이를 이용한 유기 발광 표시장치의 제조 방법
KR101241049B1 (ko) 2011-08-01 2013-03-15 주식회사 플라즈마트 플라즈마 발생 장치 및 플라즈마 발생 방법
US9034143B2 (en) * 2011-10-05 2015-05-19 Intevac, Inc. Inductive/capacitive hybrid plasma source and system with such chamber
KR101246191B1 (ko) 2011-10-13 2013-03-21 주식회사 윈텔 플라즈마 장치 및 기판 처리 장치
US8901820B2 (en) * 2012-01-31 2014-12-02 Varian Semiconductor Equipment Associates, Inc. Ribbon antenna for versatile operation and efficient RF power coupling
US20130256271A1 (en) * 2012-04-03 2013-10-03 Theodoros Panagopoulos Methods and apparatuses for controlling plasma in a plasma processing chamber
KR101332337B1 (ko) 2012-06-29 2013-11-22 태원전기산업 (주) 초고주파 발광 램프 장치
KR20140087215A (ko) * 2012-12-28 2014-07-09 주식회사 윈텔 플라즈마 장치 및 기판 처리 장치
US11096868B2 (en) * 2013-08-26 2021-08-24 Lighthouse for Nurses Medical Devices LLC Pill pouch
US9433071B2 (en) * 2014-06-13 2016-08-30 Plasma Innovations, LLC Dielectric barrier discharge plasma generator
US11177067B2 (en) * 2018-07-25 2021-11-16 Lam Research Corporation Magnetic shielding for plasma sources

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4496425A (en) 1984-01-30 1985-01-29 At&T Technologies, Inc. Technique for determining the end point of an etching process
DE3854792D1 (de) 1987-02-24 1996-02-01 Ibm Plasmareaktor
JPH0727764B2 (ja) * 1988-03-16 1995-03-29 株式会社日立製作所 マイクロ波イオン源
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
JP2519364B2 (ja) * 1990-12-03 1996-07-31 アプライド マテリアルズ インコーポレイテッド Uhf/vhf共振アンテナ供給源を用いたプラズマリアクタ
US6077384A (en) 1994-08-11 2000-06-20 Applied Materials, Inc. Plasma reactor having an inductive antenna coupling power through a parallel plate electrode
US5280154A (en) * 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
US5277751A (en) * 1992-06-18 1994-01-11 Ogle John S Method and apparatus for producing low pressure planar plasma using a coil with its axis parallel to the surface of a coupling window
KR100281345B1 (ko) * 1992-12-01 2001-03-02 조셉 제이. 스위니 전자기 결합성 플래너 플라즈마 장치에서의 산화물 에칭 공정
KR100238627B1 (ko) * 1993-01-12 2000-01-15 히가시 데쓰로 플라즈마 처리장치
US5433812A (en) * 1993-01-19 1995-07-18 International Business Machines Corporation Apparatus for enhanced inductive coupling to plasmas with reduced sputter contamination
US5309063A (en) * 1993-03-04 1994-05-03 David Sarnoff Research Center, Inc. Inductive coil for inductively coupled plasma production apparatus
US5401350A (en) 1993-03-08 1995-03-28 Lsi Logic Corporation Coil configurations for improved uniformity in inductively coupled plasma systems
JPH0786179A (ja) * 1993-09-10 1995-03-31 Hitachi Ltd プラズマ処理装置
JP3294690B2 (ja) * 1993-10-20 2002-06-24 東京エレクトロン株式会社 プラズマエッチング装置の制御方法
KR100264445B1 (ko) * 1993-10-04 2000-11-01 히가시 데쓰로 플라즈마처리장치
JP3045444B2 (ja) * 1993-10-20 2000-05-29 東京エレクトロン株式会社 プラズマ処理装置およびその制御方法
WO1995015672A1 (en) 1993-12-01 1995-06-08 Wisconsin Alumni Research Foundation Method and apparatus for planar plasma processing
US5468296A (en) * 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
JPH07263187A (ja) * 1994-03-18 1995-10-13 Hitachi Ltd プラズマ処理装置
US5522934A (en) * 1994-04-26 1996-06-04 Tokyo Electron Limited Plasma processing apparatus using vertical gas inlets one on top of another
US5580385A (en) 1994-06-30 1996-12-03 Texas Instruments, Incorporated Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
EP0710055B1 (de) 1994-10-31 1999-06-23 Applied Materials, Inc. Plasmareaktoren zur Halbleiterscheibenbehandlung
US5589737A (en) * 1994-12-06 1996-12-31 Lam Research Corporation Plasma processor for large workpieces
US5688357A (en) 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
WO1997001655A1 (en) * 1995-06-29 1997-01-16 Lam Research Corporation A scalable helicon wave plasma processing device with a non-cylindrical source chamber
US5653811A (en) 1995-07-19 1997-08-05 Chan; Chung System for the plasma treatment of large area substrates
EP0756309A1 (de) * 1995-07-26 1997-01-29 Applied Materials, Inc. Plasmavorrichtungen zur Bearbeitung von Substraten
US5716451A (en) * 1995-08-17 1998-02-10 Tokyo Electron Limited Plasma processing apparatus
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
US5683548A (en) * 1996-02-22 1997-11-04 Motorola, Inc. Inductively coupled plasma reactor and process
JP2921493B2 (ja) * 1996-07-02 1999-07-19 日本電気株式会社 プラズマ発生装置

Also Published As

Publication number Publication date
KR100505176B1 (ko) 2005-10-10
EP0838839B1 (de) 2008-05-21
EP1324371B1 (de) 2006-06-07
EP0838839A3 (de) 1998-05-13
DE69738704D1 (de) 2008-07-03
JPH10233297A (ja) 1998-09-02
ATE396494T1 (de) 2008-06-15
EP1324371A1 (de) 2003-07-02
US6259209B1 (en) 2001-07-10
DE69736081T2 (de) 2007-01-11
EP0838839A2 (de) 1998-04-29
KR19990026531A (ko) 1999-04-15
JP3967433B2 (ja) 2007-08-29

Similar Documents

Publication Publication Date Title
DE69736081D1 (de) Plasmabearbeitungsvorrichtung
AU5086293A (en) Resonant coil coin detection apparatus
AU6088496A (en) Electron-emitting device and electron source and image-forming apparatus using the same as well as method of manufacturing the same
CA2206679A1 (en) Plasma processor for large workpieces
EP0652634A3 (de) Klimaanlage, verwendbar für einen weiten Bereich von Eingangsspannungen.
AU4356093A (en) Operation control apparatus for air-conditioner
EP0488307A3 (en) Plasma etching apparatus
MXPA02001697A (es) Aparato y metodo para localizar la fuente de una senal desconocida.
AU3047292A (en) Peristaltic pumping apparatus having an improved misloaded iv tube detecting circuit
AU4807196A (en) Electron-emitting device and electron source and image- forming apparatus using the same as well as method of manufacturing the same
EP0618664A3 (de) Elektromagnetisches Linearantriebsgerät und seine Verwendung zum Justieren von Linsen.
EP0708324A3 (de) Spektrometer mit wählbarem Strahlungsgang des von einer induktiv angeregten Plasmaquelle ausgehenden Lichts
AU8049891A (en) Process for the destruction of chemical waste by means of an electric plasma flame
GB2239995B (en) High frequency heating apparatus having an output controlling function
EP0641011A3 (de) Elektronenstrahlgerät.
FR2659178B1 (fr) Ensemble de bobines d'excitation, procede de fabrication d'un tel ensemble et micromoteur electromagnetique equipe de celui-ci.
GB2255856B (en) Apparatus for introducing samples into an inductively coupled,plasma source mass spectrometer
EP0576991A3 (de) Überwachungsgerät für eine Leuchtstoffröhre.
EP0393889A3 (de) Optisches System
AU5100893A (en) Igniter for microwave energized plasma processing apparatus
FI982285A (fi) Menetelmä ja laite röntgensädelähteen ulostulon kontrolloimiseksi ja optimoimiseksi
GB2240426B (en) Fabrication process for microminiature electron emitting device
AUPM952494A0 (en) Improved apparatus for the mechanical projection of devices through tubes, etc.
AU8035591A (en) High frequency heating apparatus
GB9200536D0 (en) Apparatus for producing sample vapour for transferral into an inductively coupled plasma

Legal Events

Date Code Title Description
8364 No opposition during term of opposition