JP3964811B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP3964811B2
JP3964811B2 JP2003065310A JP2003065310A JP3964811B2 JP 3964811 B2 JP3964811 B2 JP 3964811B2 JP 2003065310 A JP2003065310 A JP 2003065310A JP 2003065310 A JP2003065310 A JP 2003065310A JP 3964811 B2 JP3964811 B2 JP 3964811B2
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layer
semiconductor device
gate electrode
conductivity type
type base
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Japanese (ja)
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JP2004096067A5 (enExample
JP2004096067A (ja
Inventor
山 和 也 中
田 聡 相
月 繁 雄 上
沢 優 泉
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Toshiba Corp
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Toshiba Corp
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Priority to JP2003065310A priority Critical patent/JP3964811B2/ja
Priority to US10/445,952 priority patent/US7034346B2/en
Publication of JP2004096067A publication Critical patent/JP2004096067A/ja
Priority to US11/186,838 priority patent/US7341900B2/en
Publication of JP2004096067A5 publication Critical patent/JP2004096067A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003065310A 2002-07-09 2003-03-11 半導体装置及びその製造方法 Expired - Lifetime JP3964811B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003065310A JP3964811B2 (ja) 2002-07-09 2003-03-11 半導体装置及びその製造方法
US10/445,952 US7034346B2 (en) 2002-07-09 2003-05-28 Semiconductor device and method for manufacturing the same
US11/186,838 US7341900B2 (en) 2002-07-09 2005-07-22 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002199682 2002-07-09
JP2003065310A JP3964811B2 (ja) 2002-07-09 2003-03-11 半導体装置及びその製造方法

Publications (3)

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JP2004096067A JP2004096067A (ja) 2004-03-25
JP2004096067A5 JP2004096067A5 (enExample) 2006-04-20
JP3964811B2 true JP3964811B2 (ja) 2007-08-22

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JP2003065310A Expired - Lifetime JP3964811B2 (ja) 2002-07-09 2003-03-11 半導体装置及びその製造方法

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US (2) US7034346B2 (enExample)
JP (1) JP3964811B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319964A (ja) * 2003-03-28 2004-11-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7397084B2 (en) * 2005-04-01 2008-07-08 Semiconductor Components Industries, L.L.C. Semiconductor device having enhanced performance and method
US7659570B2 (en) * 2005-05-09 2010-02-09 Alpha & Omega Semiconductor Ltd. Power MOSFET device structure for high frequency applications
JP2006339516A (ja) * 2005-06-03 2006-12-14 Rohm Co Ltd 半導体装置およびその製造方法
JP5025935B2 (ja) * 2005-09-29 2012-09-12 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型電界効果トランジスタの製造方法
JP5014622B2 (ja) * 2005-12-08 2012-08-29 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置の製造方法
JP5601010B2 (ja) * 2010-04-20 2014-10-08 三菱電機株式会社 半導体素子
JP5704003B2 (ja) * 2011-07-15 2015-04-22 住友電気工業株式会社 半導体装置の製造方法
JP5831526B2 (ja) 2013-01-17 2015-12-09 株式会社デンソー 半導体装置およびその製造方法
CN107170682A (zh) * 2016-03-07 2017-09-15 北大方正集团有限公司 Vdmos器件的制作方法
JP6616280B2 (ja) * 2016-12-27 2019-12-04 トヨタ自動車株式会社 スイッチング素子
JP2019046991A (ja) * 2017-09-04 2019-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP4092752A1 (en) * 2021-05-21 2022-11-23 Infineon Technologies Austria AG Semiconductor die with a transistor device and method of manufacturing the same

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
US5155052A (en) * 1991-06-14 1992-10-13 Davies Robert B Vertical field effect transistor with improved control of low resistivity region geometry
JP3192857B2 (ja) 1994-01-28 2001-07-30 三洋電機株式会社 縦型ｍｏｓ半導体装置及びその製造方法
US5703383A (en) * 1995-04-11 1997-12-30 Kabushiki Kaisha Toshiba Power semiconductor device
JPH08298321A (ja) 1995-04-27 1996-11-12 Nippondenso Co Ltd 半導体装置
US5780341A (en) * 1996-12-06 1998-07-14 Halo Lsi Design & Device Technology, Inc. Low voltage EEPROM/NVRAM transistors and making method
JP3460170B2 (ja) * 1997-02-03 2003-10-27 シャープ株式会社 薄膜トランジスタ及びその製造方法
JPH10321855A (ja) * 1997-03-18 1998-12-04 Toshiba Corp 高耐圧半導体装置
US6087697A (en) * 1997-10-31 2000-07-11 Stmicroelectronics, Inc. Radio frequency power MOSFET device having improved performance characteristics
US6259142B1 (en) * 1998-04-07 2001-07-10 Advanced Micro Devices, Inc. Multiple split gate semiconductor device and fabrication method
DE19953620A1 (de) 1998-11-09 2000-05-11 Int Rectifier Corp Niederspannungs-MOSFET und Verfahren zu seiner Herstellung
JP2002184784A (ja) 2000-12-18 2002-06-28 Ricoh Co Ltd 縦型二重拡散ｍｏｓｆｅｔとその製造方法

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Publication number Publication date
US7341900B2 (en) 2008-03-11
US7034346B2 (en) 2006-04-25
US20050258503A1 (en) 2005-11-24
US20040007766A1 (en) 2004-01-15
JP2004096067A (ja) 2004-03-25

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