JP3964811B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP3964811B2
JP3964811B2 JP2003065310A JP2003065310A JP3964811B2 JP 3964811 B2 JP3964811 B2 JP 3964811B2 JP 2003065310 A JP2003065310 A JP 2003065310A JP 2003065310 A JP2003065310 A JP 2003065310A JP 3964811 B2 JP3964811 B2 JP 3964811B2
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layer
semiconductor device
gate electrode
conductivity type
type base
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Japanese (ja)
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JP2004096067A5 (enExample
JP2004096067A (ja
Inventor
山 和 也 中
田 聡 相
月 繁 雄 上
沢 優 泉
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Toshiba Corp
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Toshiba Corp
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Priority to JP2003065310A priority Critical patent/JP3964811B2/ja
Priority to US10/445,952 priority patent/US7034346B2/en
Publication of JP2004096067A publication Critical patent/JP2004096067A/ja
Priority to US11/186,838 priority patent/US7341900B2/en
Publication of JP2004096067A5 publication Critical patent/JP2004096067A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/661—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation
    • H10D64/662—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures
    • H10D64/663—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of silicon contacting the insulator, e.g. polysilicon having vertical doping variation the conductor further comprising additional layers, e.g. multiple silicon layers having different crystal structures the additional layers comprising a silicide layer contacting the layer of silicon, e.g. polycide gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H10P30/221—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks characterised by the angle between the ion beam and the mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2003065310A 2002-07-09 2003-03-11 半導体装置及びその製造方法 Expired - Lifetime JP3964811B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003065310A JP3964811B2 (ja) 2002-07-09 2003-03-11 半導体装置及びその製造方法
US10/445,952 US7034346B2 (en) 2002-07-09 2003-05-28 Semiconductor device and method for manufacturing the same
US11/186,838 US7341900B2 (en) 2002-07-09 2005-07-22 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002199682 2002-07-09
JP2003065310A JP3964811B2 (ja) 2002-07-09 2003-03-11 半導体装置及びその製造方法

Publications (3)

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JP2004096067A JP2004096067A (ja) 2004-03-25
JP2004096067A5 JP2004096067A5 (enExample) 2006-04-20
JP3964811B2 true JP3964811B2 (ja) 2007-08-22

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JP2003065310A Expired - Lifetime JP3964811B2 (ja) 2002-07-09 2003-03-11 半導体装置及びその製造方法

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US (2) US7034346B2 (enExample)
JP (1) JP3964811B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004319964A (ja) * 2003-03-28 2004-11-11 Mitsubishi Electric Corp 半導体装置及びその製造方法
US7397084B2 (en) * 2005-04-01 2008-07-08 Semiconductor Components Industries, L.L.C. Semiconductor device having enhanced performance and method
US7659570B2 (en) * 2005-05-09 2010-02-09 Alpha & Omega Semiconductor Ltd. Power MOSFET device structure for high frequency applications
JP2006339516A (ja) 2005-06-03 2006-12-14 Rohm Co Ltd 半導体装置およびその製造方法
JP5025935B2 (ja) * 2005-09-29 2012-09-12 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型電界効果トランジスタの製造方法
JP5014622B2 (ja) * 2005-12-08 2012-08-29 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置の製造方法
JP5601010B2 (ja) * 2010-04-20 2014-10-08 三菱電機株式会社 半導体素子
JP5704003B2 (ja) * 2011-07-15 2015-04-22 住友電気工業株式会社 半導体装置の製造方法
JP5831526B2 (ja) 2013-01-17 2015-12-09 株式会社デンソー 半導体装置およびその製造方法
CN107170682A (zh) * 2016-03-07 2017-09-15 北大方正集团有限公司 Vdmos器件的制作方法
JP6616280B2 (ja) * 2016-12-27 2019-12-04 トヨタ自動車株式会社 スイッチング素子
JP2019046991A (ja) * 2017-09-04 2019-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP4092752A1 (en) * 2021-05-21 2022-11-23 Infineon Technologies Austria AG Semiconductor die with a transistor device and method of manufacturing the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155052A (en) * 1991-06-14 1992-10-13 Davies Robert B Vertical field effect transistor with improved control of low resistivity region geometry
JP3192857B2 (ja) 1994-01-28 2001-07-30 三洋電機株式会社 縦型ｍｏｓ半導体装置及びその製造方法
US5703383A (en) * 1995-04-11 1997-12-30 Kabushiki Kaisha Toshiba Power semiconductor device
JPH08298321A (ja) 1995-04-27 1996-11-12 Nippondenso Co Ltd 半導体装置
US5780341A (en) * 1996-12-06 1998-07-14 Halo Lsi Design & Device Technology, Inc. Low voltage EEPROM/NVRAM transistors and making method
JP3460170B2 (ja) * 1997-02-03 2003-10-27 シャープ株式会社 薄膜トランジスタ及びその製造方法
JPH10321855A (ja) * 1997-03-18 1998-12-04 Toshiba Corp 高耐圧半導体装置
US6087697A (en) * 1997-10-31 2000-07-11 Stmicroelectronics, Inc. Radio frequency power MOSFET device having improved performance characteristics
US6259142B1 (en) * 1998-04-07 2001-07-10 Advanced Micro Devices, Inc. Multiple split gate semiconductor device and fabrication method
TW434902B (en) 1998-11-09 2001-05-16 Int Rectifier Corp Low voltage MOSFET and process for its manufacture and circuit application
JP2002184784A (ja) 2000-12-18 2002-06-28 Ricoh Co Ltd 縦型二重拡散ｍｏｓｆｅｔとその製造方法

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Publication number Publication date
US7034346B2 (en) 2006-04-25
US20040007766A1 (en) 2004-01-15
US7341900B2 (en) 2008-03-11
US20050258503A1 (en) 2005-11-24
JP2004096067A (ja) 2004-03-25

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