JP3957215B2 - 圧電性発振回路、その製造方法およびフィルター構造 - Google Patents
圧電性発振回路、その製造方法およびフィルター構造 Download PDFInfo
- Publication number
- JP3957215B2 JP3957215B2 JP2003553709A JP2003553709A JP3957215B2 JP 3957215 B2 JP3957215 B2 JP 3957215B2 JP 2003553709 A JP2003553709 A JP 2003553709A JP 2003553709 A JP2003553709 A JP 2003553709A JP 3957215 B2 JP3957215 B2 JP 3957215B2
- Authority
- JP
- Japan
- Prior art keywords
- upper electrode
- electrode layer
- layer
- frequency
- piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000010355 oscillation Effects 0.000 title claims description 70
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000010410 layer Substances 0.000 claims description 147
- 238000000034 method Methods 0.000 claims description 76
- 238000012937 correction Methods 0.000 claims description 44
- 238000005530 etching Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 25
- 230000008859 change Effects 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 5
- 238000012986 modification Methods 0.000 claims description 4
- 230000004048 modification Effects 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 3
- 230000008719 thickening Effects 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 2
- 230000008569 process Effects 0.000 description 20
- 238000000151 deposition Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000002592 echocardiography Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010291 electrical method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
(a)圧電性発振回路の少なくとも1つの第1層を生成する工程と、
(b)工程(a)で生成した層を加工すること(Bearbeiten)により、第1周波数修正を行う工程と、
(c)圧電性発振回路の少なくとも1つの第2層を生成する工程と、
(d)工程(c)で生成した層を加工することにより、第2周波数修正を行う工程とを含む方法を提供する。
図1〜図3は、所定の固有周波数を有する圧電性発振回路の本発明に基づく実施方法の実施例を示す図である。
102 基板の下部表面
104 基板の上部表面
106 遮音層
108 遮音部
108a〜108b 遮音部の層
110 絶縁層の上部表面
112 底電極
112a 第1底電極層
112b 第2底電極層
114 圧電性層
116 上部電極
116a 第1上部電極層
116b 第2上部電極層
118 エッチング工程
120 エッチング工程
Claims (15)
- 所定の固有周波数を備え、かつ、対向する2つの表面を有する圧電性層(114)と、これら対向する表面の一方にある下部電極(112;112a,112b)と、対向する表面の他方にある上部電極(116a,116b)とを備える圧電性発振回路を、薄膜技術により製造する方法において、
(a)上部電極の少なくとも1つの第1上部電極層(116a)を生成する工程と、
(b)工程(a)で生成した第1上部電極層(116a)を薄くまたは厚くすることにより、第1周波数修正を行う工程と、
(c)第1上部電極層(116a)に、少なくとも1つの第2上部電極層(116b)を生成する工程と、
(d)工程(c)で生成した第2上部電極層(116b)を薄くまたは厚くすることにより、第2周波数修正を行う工程とを含む方法。 - 上記工程(b)の第1周波数修正で、周波数を大まかに設定し、上記工程(c)の第2周波数修正で、周波数を精細に設定する、請求項1に記載の方法。
- 上記工程(a)で生成した第1上部電極層(116a)を、この第1上部電極層(116a)の厚みの変化に応じて圧電性発振回路の大きな周波数変化を引き起こす物質から製造し、
上記工程(c)で生成した第2上部電極層(116b)を、この第2上部電極層(116b)の厚みの変化に応じて圧電性発振回路の小さな周波数変化を引き起こす物質から製造する、請求項1または2に記載の方法。 - 上記第1周波数修正と上記第2周波数修正とが、第1上部電極層(116a)と第2上部電極層(116b)とのエッチングを含んでいる、請求項1〜3のいずれか1項に記載の方法。
- 上記工程(a)の後および工程(b)の後に、
工程(a)の後および工程(b)の後にそれぞれ得られる構造の固有周波数を特定する工程と、
特定した構造の固有周波数に応じて、および、圧電性発振回路の所望の固有周波数に応じて、第1周波数修正および第2周波数修正のために、第1上部電極層(116a)および第2上部電極層(116b)の必要な厚み変化を決定する工程とを含む、請求項1〜4のいずれか1項に記載の方法。 - (e)第2上部電極層(116b)に少なくとも1つの第3上部電極層を生成する工程と、
(f)工程(e)で生成した第3上部電極層を薄くまたは厚くすることにより、第3周波数修正を実施する工程とを含む、請求項1〜5のいずれか1項に記載の方法。 - 上記工程(a)が、
(a.1.)基板(100)を用意する工程と、
(a.2.)基板(100)の少なくとも一部に下部電極(112)を生成する工程と、
(a.3.)下部電極(114)の少なくとも一部に、圧電性層(114)を生成する工程と、
(a.4.)圧電性層(114)の少なくとも一部に、上部電極(116)用の第1上部電極層(116a)を生成する工程とを含む、請求項1〜6のいずれか1項に記載の方法。 - 上記工程(a.1.)が、基板(100)へ音響振動が漏れ出ることを防止するために、基板(100)上または基板(100)内に遮音部(108)を生成する工程を含む、請求項7に記載の方法。
- 上記下部電極(112)を、単層または複層の電極(112a,112b)とする、請求項7または8に記載の方法。
- 上記第1上部電極層(116a)を、音響的に緻密な物質から製造し、上記第2上部電極層(116b)を、音響的な緻密さが第1上部電極層(116a)の物 質よりも低い物質から製造する、請求項7〜9のいずれかに記載の方法。
- 上記上部電極(116)および/または下部電極(112)が、アルミニウムおよび/またはタングステンから製造されている、請求項10に記載の方法。
- 複数の圧電性発振回路を1つのウエハー上に生成し、
上記工程(a)において、ウエハー上に、少なくとも1つの第1上部電極層(116a)を、複数の圧電性発振回路のために、パターン化して生成し、
上記工程(b)において、第1周波数修正を、ウエハー全体に施し、
上記工程(c)において、少なくとも1つの第2上部電極層(116b)を、全ての圧電性発振回路のためにパターン化して生成し、
上記工程(d)において、第2周波数修正を、ウエハー全体に施す、請求項1〜11のいずれか1項に記載の方法。 - 上記第1周波数修正および第2周波数修正が、ウエハーの様々な領域を段階的に加工する工程を含んでいる、請求項12に記載の方法。
- 請求項1〜13のいずれか1項に記載の方法によって製造された圧電性発振回路。
- 請求項14に記載の圧電性発振回路を1つ以上備えるフィルター構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10162580A DE10162580A1 (de) | 2001-12-19 | 2001-12-19 | Piezoelektrischer Schwingkreis, Verfahren zu dessen Herstellung und Filteranordnung |
PCT/EP2002/013137 WO2003052928A1 (de) | 2001-12-19 | 2002-11-22 | Piezoelektrischer schwingkreis, verfahren zu dessen herstellung und filteranordnung |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005513850A JP2005513850A (ja) | 2005-05-12 |
JP3957215B2 true JP3957215B2 (ja) | 2007-08-15 |
Family
ID=7709918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003553709A Expired - Fee Related JP3957215B2 (ja) | 2001-12-19 | 2002-11-22 | 圧電性発振回路、その製造方法およびフィルター構造 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7455786B2 (ja) |
EP (1) | EP1456947B1 (ja) |
JP (1) | JP3957215B2 (ja) |
DE (2) | DE10162580A1 (ja) |
WO (1) | WO2003052928A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006018788A1 (en) * | 2004-08-20 | 2006-02-23 | Philips Intellectual Property & Standards Gmbh | Narrow band bulk acoustic wave filter |
JP4978210B2 (ja) * | 2007-01-25 | 2012-07-18 | セイコーエプソン株式会社 | バルク音響振動子の製造方法 |
US7535324B2 (en) | 2007-06-15 | 2009-05-19 | Avago Technologies Wireless Ip, Pte. Ltd. | Piezoelectric resonator structure and method for manufacturing a coupled resonator device |
US8291559B2 (en) * | 2009-02-24 | 2012-10-23 | Epcos Ag | Process for adapting resonance frequency of a BAW resonator |
US8479363B2 (en) * | 2010-05-11 | 2013-07-09 | Hao Zhang | Methods for wafer level trimming of acoustically coupled resonator filter |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US249074A (en) * | 1881-11-01 | miller | ||
DE1566009A1 (de) * | 1967-08-26 | 1971-02-18 | Telefunken Patent | Mechanisches Frequenzfilter und Verfahren zu seiner Herstellung |
JPS5518191A (en) * | 1978-07-27 | 1980-02-08 | Nec Corp | Frequency adjustment method for disk-shaped piezoelectric oscillator |
JPS55115710A (en) * | 1979-02-28 | 1980-09-05 | Nippon Dempa Kogyo Co Ltd | Frequency adjustment method for thickness slide vibrator |
US4554717A (en) * | 1983-12-08 | 1985-11-26 | The United States Of America As Represented By The Secretary Of The Army | Method of making miniature high frequency SC-cut quartz crystal resonators |
JPH02272815A (ja) * | 1989-04-13 | 1990-11-07 | Matsushita Electric Ind Co Ltd | 圧電振動子の周波数微調整装置 |
US5118982A (en) * | 1989-05-31 | 1992-06-02 | Nec Corporation | Thickness mode vibration piezoelectric transformer |
JPH05267970A (ja) * | 1992-03-17 | 1993-10-15 | Sumitomo Metal Ind Ltd | 圧電共振子の周波数調整方法 |
JPH06204777A (ja) | 1993-01-07 | 1994-07-22 | Mitsubishi Electric Corp | 水晶振動子の調整方法 |
JPH0774570A (ja) | 1993-08-31 | 1995-03-17 | Tdk Corp | 電子部品及びその製造方法 |
US5587620A (en) * | 1993-12-21 | 1996-12-24 | Hewlett-Packard Company | Tunable thin film acoustic resonators and method for making the same |
JP3595034B2 (ja) * | 1995-07-03 | 2004-12-02 | 東洋通信機株式会社 | 三重モード圧電フィルタ及びその周波数調整方法 |
US6051907A (en) | 1996-10-10 | 2000-04-18 | Nokia Mobile Phones Limited | Method for performing on-wafer tuning of thin film bulk acoustic wave resonators (FBARS) |
US6249074B1 (en) * | 1997-08-22 | 2001-06-19 | Cts Corporation | Piezoelectric resonator using sacrificial layer and method of tuning same |
JP3712035B2 (ja) * | 1999-04-28 | 2005-11-02 | 株式会社村田製作所 | 表面波装置の製造方法 |
US6625855B1 (en) * | 1999-10-06 | 2003-09-30 | Murata Manufacturing Co., Ltd. | Method for producing surface acoustic wave device |
US6339276B1 (en) * | 1999-11-01 | 2002-01-15 | Agere Systems Guardian Corp. | Incremental tuning process for electrical resonators based on mechanical motion |
JP2001196883A (ja) * | 1999-11-01 | 2001-07-19 | Murata Mfg Co Ltd | 圧電共振素子の周波数調整方法 |
JP3945103B2 (ja) * | 1999-12-15 | 2007-07-18 | セイコーエプソン株式会社 | 圧電振動子と圧電振動片の周波数調整方法及び周波数調整用の加工装置 |
JP3823647B2 (ja) | 1999-12-15 | 2006-09-20 | セイコーエプソン株式会社 | 圧電振動子と圧電振動片の周波数調整方法及び周波数調整用の加工装置 |
JP2001244778A (ja) * | 1999-12-22 | 2001-09-07 | Toyo Commun Equip Co Ltd | 高周波圧電振動子 |
EP1273099A1 (en) * | 2000-04-06 | 2003-01-08 | Koninklijke Philips Electronics N.V. | Tunable filter arrangement comprising resonators. |
US6566979B2 (en) * | 2001-03-05 | 2003-05-20 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
US6617249B2 (en) * | 2001-03-05 | 2003-09-09 | Agilent Technologies, Inc. | Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method |
US6601276B2 (en) * | 2001-05-11 | 2003-08-05 | Agere Systems Inc. | Method for self alignment of patterned layers in thin film acoustic devices |
DE10124349A1 (de) * | 2001-05-18 | 2002-12-05 | Infineon Technologies Ag | Piezoelektrische Resonatorvorrichtung mit Verstimmungsschichtfolge |
JP3984441B2 (ja) * | 2001-07-26 | 2007-10-03 | 松下電器産業株式会社 | 圧電薄膜振動子及びフィルタ |
EP2161836B1 (en) * | 2001-12-28 | 2012-09-26 | Panasonic Corporation | Surface acoustic wave device, electronic component using the device, and composite module |
US6975184B2 (en) * | 2003-05-30 | 2005-12-13 | Intel Corporation | Adjusting the frequency of film bulk acoustic resonators |
-
2001
- 2001-12-19 DE DE10162580A patent/DE10162580A1/de not_active Withdrawn
-
2002
- 2002-11-22 EP EP02777358A patent/EP1456947B1/de not_active Expired - Fee Related
- 2002-11-22 WO PCT/EP2002/013137 patent/WO2003052928A1/de active IP Right Grant
- 2002-11-22 DE DE50202672T patent/DE50202672D1/de not_active Expired - Lifetime
- 2002-11-22 JP JP2003553709A patent/JP3957215B2/ja not_active Expired - Fee Related
-
2004
- 2004-06-16 US US10/869,817 patent/US7455786B2/en not_active Expired - Lifetime
-
2008
- 2008-11-14 US US12/271,530 patent/US8365372B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US7455786B2 (en) | 2008-11-25 |
EP1456947B1 (de) | 2005-03-30 |
DE10162580A1 (de) | 2003-07-17 |
US20050062363A1 (en) | 2005-03-24 |
US8365372B2 (en) | 2013-02-05 |
EP1456947A1 (de) | 2004-09-15 |
US20090064477A1 (en) | 2009-03-12 |
JP2005513850A (ja) | 2005-05-12 |
WO2003052928A1 (de) | 2003-06-26 |
DE50202672D1 (de) | 2005-05-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4455817B2 (ja) | 離調層配列を備える圧電性薄層共振器装置 | |
US6933809B2 (en) | Film bulk acoustic resonator (FBAR) device and method for producing the same | |
US6998940B2 (en) | Component operating with bulk acoustic waves and a method for producing the component | |
KR101312222B1 (ko) | 다층 전극 제조 방법, baw 공진기 및 그 제조 방법 | |
US20110121916A1 (en) | Hybrid bulk acoustic wave resonator | |
US7669310B2 (en) | Method of manufacturing an acoustic mirror | |
US7694397B2 (en) | Method of manufacturing an acoustic mirror for piezoelectric resonator | |
CN1595798B (zh) | 薄膜谐振器及其制造方法以及具有薄膜谐振器的滤波器 | |
US7179392B2 (en) | Method for forming a tunable piezoelectric microresonator | |
US8365372B2 (en) | Piezoelectric oscillating circuit, method for manufacturing the same and filter arrangement | |
JP2006217188A (ja) | 薄膜圧電共振器及びその製造方法 | |
US8209826B2 (en) | Method for manufacturing a coupled resonator device | |
JP6869831B2 (ja) | 圧電薄膜共振器およびその製造方法、フィルタ並びにマルチプレクサ | |
US10211810B2 (en) | Acoustic wave filter and method for manufacturing the same | |
US6657517B2 (en) | Multi-frequency thin film resonators | |
JP2005303573A (ja) | 薄膜圧電共振器及びその製造方法 | |
TW202023081A (zh) | 聲波諧振器及其製造方法 | |
CN103825574A (zh) | 声波器件及其制造方法 | |
JP2008182512A (ja) | バルク音響振動子の製造方法及びバルク音響振動子 | |
US20040212459A1 (en) | Method for producing a layer with a predefined layer thickness profile | |
US20100068831A1 (en) | Method for wafer trimming for increased device yield | |
TWI833158B (zh) | 聲波共振器 | |
JP2007295304A (ja) | バルク弾性波共振器およびその製造方法 | |
US10587242B2 (en) | Acoustic wave filter and method for manufacturing the same | |
JP2006211589A (ja) | 圧電薄膜デバイス及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20070207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070403 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20070502 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100518 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100518 Year of fee payment: 3 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100518 Year of fee payment: 3 |
|
R370 | Written measure of declining of transfer procedure |
Free format text: JAPANESE INTERMEDIATE CODE: R370 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100518 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100518 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110518 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110518 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120518 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130518 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130518 Year of fee payment: 6 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130518 Year of fee payment: 6 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130518 Year of fee payment: 6 |
|
LAPS | Cancellation because of no payment of annual fees |