JP4455817B2 - 離調層配列を備える圧電性薄層共振器装置 - Google Patents
離調層配列を備える圧電性薄層共振器装置 Download PDFInfo
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- JP4455817B2 JP4455817B2 JP2002592284A JP2002592284A JP4455817B2 JP 4455817 B2 JP4455817 B2 JP 4455817B2 JP 2002592284 A JP2002592284 A JP 2002592284A JP 2002592284 A JP2002592284 A JP 2002592284A JP 4455817 B2 JP4455817 B2 JP 4455817B2
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- 239000000758 substrate Substances 0.000 claims description 24
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 238000009413 insulation Methods 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 description 26
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 26
- 238000010586 diagram Methods 0.000 description 19
- 238000009966 trimming Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910003446 platinum oxide Inorganic materials 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/56—Monolithic crystal filters
- H03H9/564—Monolithic crystal filters implemented with thin-film techniques
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0421—Modification of the thickness of an element
- H03H2003/0428—Modification of the thickness of an element of an electrode
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
10’ 離調された圧電性共振器
20 圧電性層
21 第1表面
22,22’ 第1電極
23 第2表面
24,24’ 第2電極
26 離調層
28,28’ 第1電極の第1層
30,30’ 第1電極の第2層
32,32’ 第2電極の第1層
34,34’ 第2電極の第2層
36 曲線
38,40 誤差範囲
42 厚さ範囲
44 曲線
46,48 誤差範囲
50 厚さ範囲
52 離調層
52A 音響インピーダンスの低い第1層
52B 音響インピーダンスの高い第1層
54 曲線
56,58 誤差範囲
60 厚さ範囲
62 基板
64 空所
66 音響反射器
68 フィルター
70〜78 共振器
80〜84 ノード
86 基準電位
88 フィルター
90〜96 共振器
98 入力部
98A,98B 入力部端子
100 出力部
100A,100B 出力部端子
Claims (8)
- 第1圧電性共振器(10)と第2圧電性共振器(10’)と、
第1圧電性共振器(10)に配置されている離調層配列(52)とを備え、
第1圧電性共振器(10)および第2圧電性共振器(10’)は、第1表面(21)と第2表面(23)とを有する圧電性層(20)と、第1表面(21)上の第1電極(22,22’)と、第2表面(23)上の第2電極(24,24’)とをそれぞれ備える共振器装置であって、
離調層配列(52)が、第1圧電性共振器(10)の第1電極(22)が有する第1層と第2層との間、または、第1圧電性共振器(10)の第2電極(24)が有する第1層と第2層との間、のどちらかに配置されており、
離調層配列(52)は、第1圧電性共振器(10)の共振周波数を、第2圧電性共振器(10’)の共振周波数に対してシフトさせるために、少なくとも、第1音響インピーダンスを有する第1層(52A)と、第2音響インピーダンスを有する第2層(52B)とを備えており、第1音響インピーダンスは、第2音響インピーダンスよりも低く、音響インピーダンスの低い上記第1層(52A)は、AlまたはSiO 2 により構成され、音響インピーダンスの高い上記第2層(52B)は、W,Mo,PtまたはTa 2 O 5 により構成される共振器装置。 - 音響インピーダンスの低い上記第1層(52A)の厚さは、50nm〜200nmの範囲であり、音響インピーダンスの高い上記第2層(52B)の厚さは、10nm〜60nmの範囲である請求項1に記載の共振器装置。
- 基板(62)を備え、該基板上に、第1および第2圧電性共振器(10,10’)が遮音されて配置されている請求項1または2に記載の共振器装置。
- 遮音のために、空所(64)または音響反射器(66)が、第1圧電性共振器(10)と基板(62)との間、および、第2圧電性共振器(10’)と基板(62)との間に配置されている請求項3に記載の共振器装置。
- 圧電性共振器(10)と第2圧電性共振器(10’)との共振周波数は、2%〜3%だけ異なっている請求項1〜4のいずれか1項に記載の共振器装置。
- 第2圧電性共振器(10’)は、第1ノードと第2ノードとの間に接続されており、第1圧電性共振器(10)は、第2ノードと基準電位との間に接続されている請求項1〜5のいずれか1項に記載の共振器装置。
- 第1および第2圧電性共振器(10,10’)は、複数の圧電性層を備えている請求項1〜6のいずれか1項に記載の共振器装置。
- 請求項1〜7のいずれか1項に記載の共振器装置を有するフィルター(68,88)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10124349A DE10124349A1 (de) | 2001-05-18 | 2001-05-18 | Piezoelektrische Resonatorvorrichtung mit Verstimmungsschichtfolge |
PCT/EP2002/004717 WO2002095939A1 (de) | 2001-05-18 | 2002-04-29 | Piezoelektrische resonatorvorrichtung mit verstimmungsschichtfolge |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004534445A JP2004534445A (ja) | 2004-11-11 |
JP2004534445A5 JP2004534445A5 (ja) | 2005-09-02 |
JP4455817B2 true JP4455817B2 (ja) | 2010-04-21 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2002592284A Expired - Fee Related JP4455817B2 (ja) | 2001-05-18 | 2002-04-29 | 離調層配列を備える圧電性薄層共振器装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US6864619B2 (ja) |
EP (1) | EP1393440B1 (ja) |
JP (1) | JP4455817B2 (ja) |
KR (1) | KR20040002971A (ja) |
DE (2) | DE10124349A1 (ja) |
WO (1) | WO2002095939A1 (ja) |
Families Citing this family (80)
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FR2853473B1 (fr) * | 2003-04-01 | 2005-07-01 | St Microelectronics Sa | Composant electronique comprenant un resonateur et procede de fabrication |
US7038355B2 (en) | 2003-04-03 | 2006-05-02 | Stmicroelectronics Sa | Tunable microresonator on an insulating beam deformable by the difference in thermal expansion coefficients |
JP4321754B2 (ja) * | 2003-07-31 | 2009-08-26 | Tdk株式会社 | 圧電共振器およびそれを用いたフィルタ |
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FR2551611B1 (fr) * | 1983-08-31 | 1986-10-24 | Labo Electronique Physique | Nouvelle structure de transducteur ultrasonore et appareil d'examen de milieux par echographie ultrasonore comprenant une telle structure |
JPS60206315A (ja) * | 1984-03-30 | 1985-10-17 | Toshiba Corp | 圧電薄膜共振器 |
US5646583A (en) * | 1996-01-04 | 1997-07-08 | Rockwell International Corporation | Acoustic isolator having a high impedance layer of hafnium oxide |
US5910756A (en) * | 1997-05-21 | 1999-06-08 | Nokia Mobile Phones Limited | Filters and duplexers utilizing thin film stacked crystal filter structures and thin film bulk acoustic wave resonators |
US5894647A (en) * | 1997-06-30 | 1999-04-20 | Tfr Technologies, Inc. | Method for fabricating piezoelectric resonators and product |
US6249074B1 (en) * | 1997-08-22 | 2001-06-19 | Cts Corporation | Piezoelectric resonator using sacrificial layer and method of tuning same |
DE59905083D1 (de) * | 1998-05-08 | 2003-05-22 | Infineon Technologies Ag | Dünnfilm-piezoresonator |
DE19931297A1 (de) * | 1999-07-07 | 2001-01-11 | Philips Corp Intellectual Pty | Volumenwellen-Filter |
US6441703B1 (en) * | 2000-01-18 | 2002-08-27 | Texas Instruments Incorporated | Multiple frequency acoustic reflector array and monolithic cover for resonators and method |
US6515558B1 (en) * | 2000-11-06 | 2003-02-04 | Nokia Mobile Phones Ltd | Thin-film bulk acoustic resonator with enhanced power handling capacity |
US6469597B2 (en) * | 2001-03-05 | 2002-10-22 | Agilent Technologies, Inc. | Method of mass loading of thin film bulk acoustic resonators (FBAR) for creating resonators of different frequencies and apparatus embodying the method |
US6566979B2 (en) * | 2001-03-05 | 2003-05-20 | Agilent Technologies, Inc. | Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method |
US6601276B2 (en) * | 2001-05-11 | 2003-08-05 | Agere Systems Inc. | Method for self alignment of patterned layers in thin film acoustic devices |
-
2001
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EP1393440A1 (de) | 2004-03-03 |
KR20040002971A (ko) | 2004-01-07 |
WO2002095939A1 (de) | 2002-11-28 |
US20040130847A1 (en) | 2004-07-08 |
DE50213637D1 (de) | 2009-08-06 |
EP1393440B1 (de) | 2009-06-24 |
DE10124349A1 (de) | 2002-12-05 |
US6864619B2 (en) | 2005-03-08 |
JP2004534445A (ja) | 2004-11-11 |
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